MCR72-003 [ONSEMI]

Sensitive Gate Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX;


型号：	MCR72-003
厂家：	ONSEMI
描述：	Sensitive Gate Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX 栅
文件：	总6页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCR72−3, MCR72−6,

MCR72−8

Preferred Device

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed for industrial and consumer applications such as

temperature, light and speed control; process and remote controls;

warning systems; capacitive discharge circuits and MPU interface.

http://onsemi.com

SCRs

Features

8 AMPERES RMS

100 thru 600 VOLTS

• Center Gate Geometry for Uniform Current Density

• All Diffused and Glass-Passivated Junctions for Parameter

Uniformity and Stability

• Small, Rugged Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Low Trigger Currents, 200 mA Maximum for Direct Driving from

Integrated Circuits

• Pb−Free Packages are Available*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = *40 to 110°C, Sine Wave,

TO−220AB

CASE 221A−07

STYLE 3

50 to 60 Hz, Gate Open)

MCR72−3

MCR72−6

MCR72−8

100

400

600

On-State RMS Current

(180° Conduction Angles; T = 83°C)

8.0

T(RMS)

Peak Non-Repetitive Surge Current

100

TSM

(1/2 Cycle, 60 Hz, T = 110°C)

Circuit Fusing Considerations (t = 8.3 ms)

I t

A s

Forward Peak Gate Voltage

"5.0

TO−220AB

CASE 221A−09

STYLE 3

(t ≤ 10 ms, T = 83°C)

Forward Peak Gate Current

1.0

5.0

(t ≤ 10 ms, T = 83°C)

Forward Peak Gate Power

(t ≤ 10 ms, T = 83°C)

Average Gate Power (t = 8.3 ms, T = 83°C)

0.75

−40 to +110

−40 to +150

8.0

°C

G(AV)

PIN ASSIGNMENT

Operating Junction Temperature Range

Storage Temperature Range

Mounting Torque

Cathode

Anode

Gate

°C

stg

−

in. lb.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Anode

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

MARKING AND ORDERING INFORMATION

See detailed marking, ordering, and shipping information in

the package dimensions section on page 4 of this data sheet.

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 20005

Publication Order Number:

December, 2005 − Rev. 3

MCR72/D

MCR72−3, MCR72−6, MCR72−8

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

2.2

Unit

°C/W

°C

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 2)

, I

DRM RRM

(V = Rated V

or V

; R = 1 kW)

T = 25°C

T = 110°C

−

500

DRM

RRM

High Logic Level Supply Current from V

ON CHARACTERISTICS

CCH

Peak Forward On-State Voltage

(I = 16 A Peak, Pulse Width p1 ms, Duty Cycle p2%)

−

1.7

0.5

−

2.0

200

1.5

−

Gate Trigger Current (Continuous dc) (Note 3)

(V = 12 V, R = 100 W)

Gate Trigger Voltage (Continuous dc) (Note 3)

(V = 12 V, R = 100 W)

−

Gate Non−Trigger Voltage

0.1

−

(V = 12 Vdc, R = 100 W, T = 110°C)

Holding Current

(V = 12 V, Initiating Current = 200 mA, Gate Open)

−

6.0

−

Gate Controlled Turn-On Time

−

1.0

(V = Rated V

, I = 16 A, I = 2 mA)

DRM TM G

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(V = Rated V , R = 1 kW, T = 110°C, Exponential Waveform)

dv/dt

−

V/ms

DRM

2. Ratings apply for negative gate voltage or R = 1 kW. Devices shall not haveapositive gate voltage concurrently withanegative voltage

on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the

voltage applied exceeds the rated blocking voltage.

3. R current not included in measurement.

http://onsemi.com

MCR72−3, MCR72−6, MCR72−8

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak On State Voltage

DRM

on state

at V

RRM

+ Voltage

Holding Current

at V

DRM

Reverse Blocking Region

(off state)

DRM

Forward Blocking Region

(off state)

Reverse Avalanche Region

Anode −

110

100

180°

α = Conduction Angle

α = 30°

90°

8.0

60°

90°

60°

α = 30°

180°

4.0

2.0

4.0

6.0

8.0

2.0

4.0

6.0

8.0

, AVERAGE ON-STATE CURRENT (AMP)

T(AV)

, AVERAGE ON-STATE CURRENT (AMP)

T(AV)

Figure 1. Average Current Derating

Figure 2. On−State Power Dissipation

3.0

2.0

0.7

= 12 Vdc

0.6

0.5

= 12 Vdc

1.0

0.4

0.3

0.2

0.1

0.5

0.3

−40 −20

100 120 140

−60 −40 −20

100 120

T , JUNCTION TEMPERATURE (°C)

Figure 3. Normalized Gate Current

Figure 4. Gate Voltage

http://onsemi.com

MCR72−3, MCR72−6, MCR72−8

MARKING DIAGRAMS

TO−220AB

CASE 221A−07

CASE 221A−09

AY WW

MCR72−xG

AKA

AY WW

MCR72−6TG

AKA

= Assembly Location

= Year

= Work Week

MCR72−x = Device Code

x = 3, 6, 8, or 8T

MCR72−6T = Device Code

= Pb−Free Package

= Diode Polarity

= Pb−Free Package

= Diode Polarity

AKA

ORDERING INFORMATION

Device

Package

Shipping

MCR72−3

TO−220AB

MCR72−3G

TO−220AB

(Pb−Free)

500 Units / Box

MCR72−6

TO−220AB

MCR72−6G

TO−220AB

(Pb−Free)

MCR72−6T

TO−220AB

50 Units / Rail

500 Units / Box

50 Units / Rail

TO−220AB

(Pb−Free)

MCR72−6TG

MCR72−8

TO−220AB

MCR72−8G

TO−220AB

(Pb−Free)

MCR72−8T

TO−220AB

(Pb−Free)

MCR72−8TG

http://onsemi.com

MCR72−3, MCR72−6, MCR72−8

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−07

ISSUE AA

NOTES:

SEATING

PLANE

−T−

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.55

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.022

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

TO−220AB

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

−T−

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

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MCR72−3, MCR72−6, MCR72−8

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MCR72/D

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MCR72-003 [ONSEMI]

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