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MCT2SVM [ONSEMI]

Transistor Output Optocoupler;
MCT2SVM
型号： MCT2SVM
厂家： ONSEMI    ONSEMI
描述：

Transistor Output Optocoupler

输出元件 光电
文件： 总11页 (文件大小：303K)
中文：  中文翻译
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January 2009  
MCT2M, MCT2EM, MCT210M, MCT271M  
Phototransistor Optocouplers  
Features  
Description  
■ UL recognized (File # E90700, Vol. 2)  
■ IEC60747-5-2 recognized (File # 102497)  
– Add option V (e.g., MCT2VM)  
The MCT2XXM series optoisolators consist of a gallium  
arsenide infrared emitting diode driving  
phototransistor in a 6-pin dual in-line package.  
a silicon  
Applications  
■ Power supply regulators  
■ Digital logic inputs  
■ Microprocessor inputs  
Schematic  
Package Outlines  
Anode 1  
6 Base  
Cathode 2  
5 Collector  
4 Emitter  
No Connection 3  
©2005 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Lead Solder Temperature  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
3
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
I
Collector Current  
50  
30  
mA  
V
C
V
Collector-Emitter Voltage  
CEO  
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
D
A
Derate above 25°C  
mW/°C  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
2
Electrical Characteristics (T = 25°C unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Device  
Min.  
Typ.*  
Max. Units  
V
Input Forward Voltage  
I = 20mA  
MCT2M  
MCT2EM  
MCT271M  
1.25  
1.50  
V
F
F
T = 0°C–70°C, I = 40mA MCT210M  
1.33  
A
F
I
Reverse Leakage  
Current  
V = 3.0V  
MCT2M  
MCT2EM  
MCT271M  
0.001  
10  
µA  
R
R
T = 0°C–70°C, V = 6.0V MCT210M  
A
R
DETECTOR  
BV  
Collector-Emitter  
BreakdownVoltage  
I = 1.0mA, I = 0  
ALL  
30  
70  
100  
120  
V
V
CEO  
C
F
T = 0°C–70°C  
MCT210M  
A
BV  
Collector-Base  
Breakdown Voltage  
I = 10µA, I = 0  
MCT2M  
MCT2EM  
MCT271M  
CBO  
C
F
T = 0°C–70°C  
MCT210M  
30  
7
A
BV  
Emitter-Collector  
I = 100µA, I = 0  
MCT2M  
MCT2EM  
MCT271M  
10  
V
ECO  
E
F
Breakdown Voltage  
T = 0°C–70°C  
MCT210M  
ALL  
6
10  
1
A
I
I
Collector-Emitter Dark  
Current  
V
V
V
= 10V, I = 0  
50  
30  
20  
nA  
µA  
nA  
CEO  
CE  
CE  
CB  
F
= 5V, T = 0°C–70°C  
A
Collector-Base Dark  
Current  
= 10V, I = 0  
ALL  
ALL  
CBO  
F
C
Capacitance  
V
= 0V, f = 1MHz  
8
pF  
CE  
CE  
*All typical T = 25°C  
A
Isolation Characteristics  
Symbol  
Parameter  
Test Conditions  
Min Typ* Max  
Units  
Vac(pk)  
Ω
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec.  
7500  
ISO  
ISO  
ISO  
11  
V
= 500 VDC  
10  
I-O  
Isolation Capacitance  
0.2  
2
pF  
*All typicals at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
3
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)  
A
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
DC CHARACTERISTICS  
CTR  
Output Collector  
Current  
T = 0°C–70°C  
MCT210M  
150  
20  
%
A
I = 10mA, V = 10V  
MCT2M  
F
CE  
MCT2EM  
MCT271M  
MCT210M  
45  
50  
90  
I = 3.2mA to 32mA,  
F
V
= 0.4V, T = 0°C–70°C  
CE  
A
V
Collector-Emitter  
Saturation Voltage  
I
= 2mA, I = 16mA  
MCT2M  
MCT2EM  
MCT271M  
0.4  
V
CE(SAT)  
C
F
I
= 16mA, I = 32mA,  
MCT210M  
C
F
T = 0°C–70°C  
A
AC CHARACTERISTICS  
t
AC Characteristic Saturated  
Turn-on Time from 5V to 0.8V  
I = 15mA, V = 5V,  
MCT2M  
1.1  
1.3  
50  
20  
2
µs  
µs  
on  
F
CC  
R = 2kΩ, R = Open (Fig. 11) MCT2EM  
L
B
I = 20mA, V = 5 V,  
MCT2M  
F
CC  
R = 2kΩ, R = 100kΩ) (Fig. 11) MCT2EM  
L
B
t
Saturated Turn-off Time from  
SAT to 2.0 V  
I = 15mA, V = 5V,  
MCT2M  
off  
F
CC  
R = 2kΩ, R = Open (Fig. 11) MCT2EM  
L
B
I = 20mA, V = 5V,  
MCT2M  
MCT2EM  
F
CC  
R = 2kΩ, R = 100kΩ (Fig. 11)  
L
B
t
t
Turn-on Time  
Turn-off Time  
Rise Time  
I = 10mA, V = 10V,  
MCT2M  
MCT2EM  
µs  
µs  
µs  
µs  
on  
off  
F
CC  
R = 100Ω  
L
I = 10mA, V = 10V,  
MCT2M  
MCT2EM  
2
F
CC  
R = 100Ω  
L
t
I = 10mA, V = 10V,  
MCT2M  
MCT2EM  
2
r
F
CC  
R = 100Ω  
L
t
Fall Time  
I = 10mA, V = 10V,  
MCT2M  
1.5  
f
F
CC  
R = 100Ω  
MCT2EM  
L
t
t
Saturated turn-on time  
I = 16mA, R = 1.9kΩ,  
MCT271M  
MCT271M  
1.0  
48  
µs  
µs  
on  
off  
F
L
V
= 5V (Fig. 11)  
CC  
Saturated turn-off time  
(Approximates a typical  
TTL interface)  
t
t
Saturated turn-on time  
I = 16mA, R = 4.7kΩ,  
1.0  
98  
µs  
µs  
on  
off  
F
L
V
= 5 V (Fig. 20)  
CC  
Saturated turn-off time  
(Approximates a typical  
low power TTL interface)  
t
Saturated rise time  
Saturated fall time  
I = 16mA, R = 560Ω,  
MCT210M  
MCT210M  
1.0  
11  
µs  
µs  
µs  
r
F
L
V
= 5V) (Fig. 11, 12)  
CC  
t
f
T
T
Saturated propagation  
delay – HIGH to LOW  
I = 16mA, R = 2.7kΩ  
1.0  
PD (HL)  
F
L
(Fig. 11, 12)  
Saturated propagation  
delay – LOW to HIGH  
50  
µs  
PD (LH)  
t
Non-saturated rise time  
Non-saturated fall time  
I
= 2mA, V = 5V,  
MCT210M  
MCT271M  
2
2
2
2
µs  
µs  
µs  
µs  
r
C
CC  
R = 100Ω (Fig. 11)  
L
t
f
t
Non-saturated turn-on time  
Non-saturated turn-off time  
I
= 2mA, V = 5V,  
7
7
on  
C
CC  
R = 100Ω (Fig. 20)  
L
t
off  
*All typicals at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
4
Typical Performance Curves  
Fig. 1 LED Forward Voltage vs. Forward Current  
Fig. 2 Normalized CTR vs. Forward Current  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
V
T
= 5.0V  
= 25°C  
Normalized to  
= 10mA  
CE  
A
I
F
T
T
T
= 55°C  
= 25°C  
= 100°C  
A
A
A
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
100  
I
– FORWARD CURRENT (mA)  
F
I
– LED FORWARD CURRENT (mA)  
F
Fig. 3 Normalized CTR vs. Ambient Temperature  
Fig. 4 CTR vs. RBE (Unsaturated)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 20mA  
F
I
= 5mA  
F
I
= 10mA  
F
I
= 5mA  
F
I
= 10mA  
F
I
= 20mA  
F
Normalized to  
= 10mA  
= 25°C  
V = 5.0V  
CE  
I
F
T
A
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
10  
100  
1000  
R
– BASE RESISTANCE (kΩ)  
BE  
T
A
– AMBIENT TEMPERATURE (°C)  
Fig. 5 CTR vs. RBE (Saturated)  
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current  
100  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
= 25°C  
V
CE  
= 0.3V  
A
10  
1
I
= 20mA  
F
I
= 10mA  
= 5mA  
F
I
I
F
= 2.5mA  
0.1  
F
I
= 20mA  
F
0.01  
I
= 5mA  
F
I
= 10mA  
F
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
R
BE  
– BASE RESISTANCE (kΩ)  
I
C
– COLLECTOR CURRENT (mA)  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
5
Typical Performance Curves (Continued)  
Fig. 7 Switching Speed vs. Load Resistor  
Fig. 8 Normalized t vs. R  
on  
BE  
1000  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
V
T
= 10mA  
F
V
10V  
= 10V  
CC =  
= 2mA  
CC  
= 25°C  
I
C
A
R
= 100Ω  
L
100  
10  
1
T
off  
T
f
T
on  
T
r
0.1  
10  
100  
R
1000  
10000  
100000  
0.1  
1
10  
100  
– BASE RESISTANCE (kΩ)  
BE  
R – LOAD RESISTOR (kΩ)  
Fig. 10 Dark Current vs. Ambient Temperature  
Fig. 9 Normalized t vs. R  
off  
BE  
10000  
1000  
100  
10  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
= 10 V  
CE  
= 25˚C  
T
A
1
V
10V  
CC =  
= 2mA  
I
C
R
= 100Ω  
0.1  
L
0.01  
0.001  
10  
100  
1000  
10000  
100000  
0
20  
40  
60  
80  
100  
R
– BASE RESISTANCE (kΩ)  
BE  
T
– AMBIENT TEMPERATURE (˚C)  
A
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
6
Typical Electro-Optical Characteristics  
TEST CIRCUIT  
WAVE FORMS  
VCC = 10V  
INPUT PULSE  
IC  
IF  
RL  
10%  
90%  
INPUT  
OUTPUT  
OUTPUT PULSE  
RBE  
tr  
tf  
toff  
ton  
IF to produce IC = 2mA  
Adjust  
Figure 11. Switching Time Test Circuit and Waveforms  
INPUT  
TPDHL  
TPDLH  
5 V  
OUTPUT  
(SATURATED)  
1.5 V  
1.5 V  
SAT  
Figure 12. Switching Time Waveforms (MCT210M)  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
7
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
8
Ordering Information  
Order Entry Identifier  
Option  
(Example)  
Description  
Standard Through Hole Device (50 units per tube)  
Surface Mount Lead Bend  
No suffix  
MCT2M  
S
SR2  
T
MCT2SM  
MCT2SR2M  
MCT2TM  
Surface Mount; Tape and Reel (1,000 units per reel)  
0.4" Lead Spacing  
V
MCT2VM  
IEC60747-5-2  
TV  
MCT2TVM  
MCT2SVM  
MCT2SR2VM  
IEC60747-5-2, 0.4" Lead Spacing  
IEC60747-5-2, Surface Mount  
SV  
SR2V  
IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)  
Marking Information  
1
2
MCT2  
6
V X YY Q  
5
3
4
Definitions  
1
2
3
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
4
5
6
One digit year code, e.g., ‘7’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with  
date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
9
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
33 Sec  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
10  
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under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.  
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,  
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of  
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are  
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have  
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I38  
©2005 Fairchild Semiconductor Corporation  
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.2  
www.fairchildsemi.com  
11  

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