MCT5210M [ONSEMI]
6 引脚 DIP 低输入电流光电晶体管输出光耦合器;
| 型号： | MCT5210M |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 低输入电流光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总16页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
MCT5210M, MCT5211M
6-Pin DIP Low Input Current Phototransistor Optocouplers
Features
Description
■ High CTR
Comparable to Darlingtons
The MCT5210M and MCT5211M devices consist of a
high-efficiency AlGaAs infrared emitting diode coupled
with an NPN phototransistor in a six-pin dual-in-line
package.
CE(SAT)
■ High Common Mode Transient Rejection: 5 kV/µs
■ Data Rates Up to 150 kbits/s (NRZ)
■ Safety and Regulatory Approvals:
The devices are well suited for CMOS to LSTT/TTL inter-
– UL1577, 4,170 VAC
for 1 Minute
RMS
faces, offering 250% CTR
with 1 mA of LED input
CE(SAT)
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
current. With an LED input current of 1.6 mA, data rates
to 20K bits/s are possible.
Applications
Both can easily interface LSTTL to LSTTL/TTL, and with
use of an external base-to-emitter resistor data rates of
100K bits/s can be achieved.
■ CMOS to CMOS/LSTTL Logic Isolation
■ LSTTL to CMOS/LSTTL Logic Isolation
■ RS-232 Line Receiver
■ Telephone Ring Detector
■ AC Line Voltage Sensing
■ Switching Power Supply
Schematic
Package Outlines
1
2
6
BASE
ANODE
CATHODE
5 COLLECTOR
4 EMITTER
3
Figure 2. Package Outlines
Figure 1. Schematic
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, V
x 1.6 = V
,
IORM
PR
1360
V
V
peak
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V
x 1.875 = V
,
IORM
PR
1594
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
External Creepage
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
175
350
800
DTI
(1)
T
Case Temperature
S
(1)
I
Input Current
mA
mW
Ω
S,INPUT
(1)
P
Output Power
S,OUTPUT
(1)
9
R
Insulation Resistance at T , V = 500 V
> 10
IO
S
IO
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
225
°C
°C
STG
T
OPR
T
ºC
J
T
°C
SOL
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
mW
mW/°C
P
D
3.5
EMITTER
I
Continuous Forward Current
Reverse Input Voltage
50
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation @ 25°C
Derate Linearly From 25°C
3.0
75
1.0
A
F
mW
mW/°C
P
D
DETECTOR
I
Continuous Collector Current
Detector Power Dissipation @ 25°C
Derate Linearly From 25°C
150
150
2.0
mA
mW
C
P
D
mW/°C
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C unless otherwise specified.
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Min.
Typ. Max. Unit
V
Input Forward Voltage
I = 5 mA
1.25
1.50
V
F
F
ΔV
Forward Voltage Temperature
Coefficient
F
I = 2 mA
-1.75
mV/°C
F
ΔT
A
V
Reverse Voltage
I = 10 µA
6
V
R
R
C
Junction Capacitance
V = 0 V, f = 1.0 MHz
18
pF
J
F
DETECTOR
Breakdown Voltage,
Collector-to-Emitter
BV
BV
I = 1.0 mA, I = 0
30
30
5
100
120
10
V
V
V
CEO
CBO
EBO
C
F
Breakdown Voltage,
Collector-to-Base
I = 10 µA, I = 0
C
F
Breakdown Voltage,
Emitter-to-Base
BV
I
I = 10 µA, I = 0
E
F
Dark Current, Collector-to-Emitter
Capacitance, Collector-to-Emitter
Capacitance, Collector-to-Base
Capacitance, Emitter-to-Base
V
= 10 V, I = 0, R = 1 MΩ
1
100
nA
pF
pF
pF
CER
CE
CE
CB
EB
F
BE
C
C
C
V
V
V
= 0, f = 1 MHz
10
80
15
CE
CB
EB
= 0, f = 1 MHz
= 0, f = 1 MHz
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
4
Electrical Characteristics (Continued)
T = 25°C unless otherwise specified.
A
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min. Typ. Max. Unit
DC CHARACTERISTICS
I = 3.0 mA, V = 0.4 V
MCT5210M 60
%
%
%
%
%
%
%
%
%
V
F
CE
Saturated Current
Transfer Ratio
Collector-to-Emitter
CTR
I = 1.6 mA, V = 0.4 V
100
MCT5211M
75
CE(SAT)
F
CE
(2)
I = 1.0 mA, V = 0.4 V
F
CE
I = 3.0 mA, V = 5.0 V
MCT5210M 70
F
CE
Current Transfer Ratio
Collector-to-Emitter
CTR
I = 1.6 mA, V = 5.0 V
150
MCT5211M
110
(CE)
(2)
F
CE
I = 1.0 mA, V = 5.0 V
F
CE
I = 3.0 mA, V = 4.3 V
MCT5210M 0.2
F
CE
Current Transfer Ratio
CTR
I = 1.6 mA, V = 4.3 V
0.3
MCT5211M
0.25
(CB)
(3)
F
CE
Collector-to-Base
I = 1.0 mA, V = 4.3 V
F
CE
I = 3.0 mA, I = 1.8 mA
MCT5210M
MCT5211M
0.4
0.4
F
CE
V
Saturation Voltage
CE(SAT)
I = 1.6 mA, I = 1.6 mA
V
F
CE
AC CHARACTERISTICS
R = 330 Ω, R = ∞
10
7
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
I = 3.0 mA,
L
BE
F
MCT5210M
MCT5211M
MCT5210M
MCT5211M
V
= 5.0 V
R = 3.3 kΩ, R = 39 kΩ
CC
L
BE
R = 750 Ω, R = ∞
14
15
17
24
0.4
8
Propagation Delay
HIGH-to-LOW
I = 1.6 mA,
F
L
BE
T
(4)
PHL
V
= 5.0 V
R = 4.7 kΩ, R = 91 kΩ
CC
L
BE
R = 1.5 kΩ, R = ∞
I = 1.0 mA,
L
BE
F
V
= 5.0 V
R = 10 kΩ, R = 160 kΩ
CC
L
BE
R = 330 Ω, R = ∞
I = 3.0 mA,
L
BE
F
V
= 5.0 V
R = 3.3 kΩ, R = 39 kΩ
CC
L
BE
R = 750 Ω, R = ∞
2.5
11
7
Propagation Delay
LOW-to-HIGH
I = 1.6 mA,
F
L
BE
T
(5)
PLH
V
= 5.0 V
R = 4.7 kΩ, R = 91 kΩ
CC
L
BE
R = 1.5 kΩ, R = ∞
I = 1.0 mA,
L
BE
F
V
= 5.0 V
R = 10 kΩ, R = 160 kΩ
16
CC
L
BE
Notes:
2. DC Current Transfer Ratio (CTR ) is defined as the transistor collector current (I ) divided by the input LED
CE
CE
current (I ) x 100%, at a specified voltage between the collector and emitter (V ).
F
CE
3. The collector base Current Transfer Ratio (CTR ) is defined as the transistor collector base photocurrent (I
)
CB
CB
divided by the input LED current (I ) time 100%.
F
4. Referring to Figure 16 the T
propagation delay is measured from the 50% point of the rising edge of the data input
PHL
pulse to the 1.3 V point on the falling edge of the output pulse.
5. Referring to Figure 16 the T propagation delay is measured from the 50% point of the falling edge of data input
PLH
pulse to the 1.3 V point on the rising edge of the output pulse.
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
5
Electrical Characteristics (Continued)
T = 25°C unless otherwise specified.
A
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
Input-Output Isolation
Voltage
V
t = 1 Minute
4170
VAC
RMS
(6)
ISO
(6)
11
R
Isolation Resistance
Isolation Capacitance
V
V
=
500 VDC, T = 25°C
10
Ω
ISO
I-O
I-O
A
(7)
C
= 0 V, f = 1 MHz
0.4
0.6
pF
ISO
Common Mode Transient
Rejection – Output HIGH
CM
V
V
= 50 V , R = 750 Ω, I = 0
5000
V/µs
V/µs
H
CM
CM
P-P
L
F
Common Mode Transient
Rejection – Output LOW
CM
= 50 V , R = 750 Ω, I =1.6 mA
5000
L
P-P
L
F
Notes:
6. Device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 5, 6 and 7 are shorted together.
7. C is the capacitance between the input (pins 1, 2, 3 connected) and the output (pin 4, 5, 6 connected).
ISO
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
6
Typical Performance Curves
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
T
= -40°C
= 25°C
A
1.2
1.0
0.8
T
A
Normalized to:
I
V
T
= 5 mA
= 5 V
F
CE
T
= 100°C
A
= 25°C
A
0.1
1
10
100
0.1
1
10
I – FORWARD CURRENT (mA)
F
I
– LED FORWARD CURRENT (mA)
F
Figure 3. LED Forward Voltage
vs. Forward Current
Figure 4. Normalized Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
Normalized to:
I
V
T
= 5 mA
= 5 V
F
CE
I
= 10 mA
F
1
0.1
I
F
= 5 mA
= 2 mA
I
F
= 10 mA
I
F
= 5 mA
= 25°C
A
I
= 2 mA
= 1 mA
F
I
F
I
I
F
F
I
= 0. 5mA
F
0.01
= 1 mA
I
= 0.2 mA
F
I
= 0.5 mA
F
Normalized to:
= 5 mA
0.001
0.0001
I
V
T
F
I
= 0.2 mA
F
= 5 V
= 25°C
CE
A
-40
-20
100 120
– AMBIENT TEMPERATURE (°C)
-20
0
20
40
60
0.1
1
10
T
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
A
Figure 6. Normalized Collector
vs. Collector-Emitter Voltage
Figure 5. Normalized CTR vs.Temperature
100
10
1
I
= 10 mA
= 5 mA
F
I
F
10
1
I
F
= 2 mA
0.1
I
F
= 1 mA
I
= 0.5 mA
= 0.2 mA
F
Normalized to:
= 5 mA
0.1
0.01
Normalized to:
I
F
I
F
I
= 5 mA
F
V
T
= 4.3 V
= 25°C
CB
V
T
= 4.3 V
= 25°C
CB
A
A
0.01
0.001
-60 -40
-20
0
20
40
60
80 100
0.1
1
10
100
T
– AMBIENT TEMPERATURE (°C)
I
F
– FORWARD CURRENT (mA)
A
Figure 7. Normalized Collector Base Photocurrent
Ratio vs. Forward Current
Figure 8. Normalized Collector-Base Current
vs.Temperature
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
7
Typical Performance Curves (Continued)
30
25
20
15
10
5
10000
I
V
= 0 mA
Refer to Figure 15 for switching time circuit
I
= 10 mA
= 5 V
F
F
CC
= 10 V
V
R
R
CE
= 1 kΩ
= 330 kΩ
L
1000
100
10
BE
t
f
t
PLH
t
s
1
t
d
t
t
r
PHL
0
-40
0.1
-20
0
20
T – AMBIENT TEMPERATURE (°C)
A
40
60
80
100 120
0
10 20 30 40 50 60 70 80 90 100
– AMBIENT TEMPERATURE (°C)
T
A
Figure 9. Collector-Emitter Dark Current
vs. Ambient Temperature
Figure 10. Switching Time
vs. Ambient Temperature
30
25
20
15
10
5
20
16
12
8
I
V
R
R
= 10 mA
I = 5 mA
F
Refer to Figure 15 for switching time circuit
F
Refer to Figure 15 for switching time circuit
= 5 V
V
= 5 V
CC
CC
= 1 kΩ
BE
R
R
= 1 kΩ
L
= 330 kΩ
BE
L
= 100 kΩ
t
f
t
f
t
t
PLH
PLH
t
s
t
s
4
t
t
PHL
r
t
r
t
d
t
t
d
PHL
0
-40
0
-40
-20
0
20
40
60
80
100
120
-20
0
20
T – AMBIENT TEMPERATURE (°C)
A
40
60
80
100 120
T
A
– AMBIENT TEMPERATURE (°C)
Figure 12. Switching Time
vs. Ambient Temperature
Figure 11. Switching Time
vs. Ambient Temperature
20
16
12
8
100
10
1
I
V
R
R
= 5 mA
F
Refer to Figure 15 for switching time circuit
t
I
R
PLH
= 5 V
CC
= 1.6 mA
F
t
, I = 1 mA, R = 10 kΩ
PLH
F
L
= 1 kΩ
BE
L
= 4.7 kΩ
L
= 100 kΩ
t
I
R
PLH
= 3 mA
F
= 3.3 kΩ
L
t
f
t
, I = 1 mA, R = 10 kΩ
PHL
F
L
t
PLH
t
, I = 1.6 mA, R = 4.7 kΩ
PHL
F
L
t
s
t
, I = 3 mA, R = 3.3 kΩ
PHL
F
L
4
V
T
= 5 V
CC
t
r
t
PHL
= 25°C
A
t
d
0
-40
10
100
1000
10000
-20
0
20
40
60
80
100 120
T
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE-EMITTER RESISTANCE (kΩ)
A
Figure 13. Switching Time vs.
Ambient Temperature
Figure 14. Switching Time vs.
Base-Emitter Resistance
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
8
Switching Time Test Circuits and Waveforms
T = 25°C unless otherwise specified.
A
VCC = 5.0 V
VCC = 5.0 V
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
1K
1K
VO
4.7K
VO
D2
D3
D4
D1
IF monitor
IF monitor
330K
330K
100 Ω
100 Ω
tr, tf, td, ts
TEST CIRCUIT
t
PHL, tPLH
TEST CIRCUIT
Figure 15. Switching Time Test Circuits
INPUT
(IF)
50%
0
td
90%
90%
tPHL
OUTPUT
(VO)
tPLH
1.3 V
1.3 V
10%
10%
0
tr
ts
tf
Figure 16. Switching Time Waveforms
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
9
Reflow Profile
300
260°C
280
260
240
220
200
180
160
140
120
100
80
> 245°C = 42 s
Time above
183°C = 90 s
°C
1.822°C/s Ramp-up rate
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 17. Reflow Profile
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
10
Ordering Information
Part Number
Package
Packing Method
MCT5210M
DIP 6-Pin
Tube (50 Units)
MCT5210SM
MCT5210SR2M
MCT5210VM
MCT5210SVM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MCT5210SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
Tube (50 Units)
MCT5210TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Note:
8. The product orderable part number system listed in this table also applies to the MCT5211M device.
Marking Information
1
2
MCT5210
6
V X YY Q
5
3
4
Figure 18. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “5”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©1983 Fairchild Semiconductor Corporation
MCT5210M, MCT5211M Rev. 1.3
www.fairchildsemi.com
11
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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