MGB15N40CLT4 [ONSEMI]
Internally Clamped N-Channel IGBT; 内部钳位N沟道IGBT
| 型号： | MGB15N40CLT4 |
| 厂家： | 
ONSEMI |
| 描述： | Internally Clamped N-Channel IGBT |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
N–CHANNEL IGBT
15 A, 410 V
V
= 1.8 V MAX
CE(on)
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
C
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
R
G
G
R
• Low Saturation Voltage
GE
• High Pulsed Current Capability
• Optional Gate Resistor (R )
G
E
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING
DIAGRAMS
Rating
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Symbol
Value
440
440
22
Unit
V
V
V
DC
V
DC
V
DC
A
DC
CES
CER
TO–220
CASE 221A
STYLE 9
GP15N40CL
ALYYWW
V
GE
Collector Current–Continuous
I
C
15
@ T = 25°C
C
G
C
Total Power Dissipation
P
D
136
1.0
Watts
E
@ T = 25°C
C
Derate above 25°C
W/°C
°C
Operating and Storage Temperature
Range
T , T
J stg
–55 to
175
2
GB15N40CL
ALYYWW
D PAK
CASE 418B
STYLE 3
A
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
TO–220
Shipping
50 Units/Rail
MGP15N40CL
MGB15N40CLT4
MGC15N40CL
D2PAK
800 Tape & Reel
Not Applicable
Die Options
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
April, 2000 – Rev. 1
MGP15N40CL/D
MGP15N40CL, MGB15N40CL, MGC15N40CL
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T
Characteristic
150°C)
J
Symbol
Value
Unit
Single Pulse Collector–to–Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
= 50 V, V
= 50 V, V
= 5 V, Pk I = 14.2 A, L = 3 mH, Starting T = 25°C
300
150
GE
GE
L
J
= 5 V, Pk I = 10 A, L = 3 mH, Starting T = 150°C
L
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.0
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
R
θJA
R
θJA
°C/W
TO–220
62.5
50
2
D PAK
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
L
275
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
I
I
= 2 mA
380
–
410
1.0
10
440
40
V
DC
CES
C
T = –40°C to 175°C
J
V
= 350 V,
Zero Gate Voltage Collector Current
µA
DC
CE
= 0, T = 25°C
CES
V
GE
J
V
= 350 V,
–
200
CE
= 0, T = 150°C
V
GE
J
Reverse Collector–Emitter Leakage Current
Gate–Emitter Clamp Voltage
Gate–Emitter Leakage Current
Gate Resistor (Optional)
I
V
= –24 V
–
17
384
–
0.35
20
1.0
22
mA
ECS
CE
BV
I
= 5 mA
V
DC
GES
G
I
V
= 10 V
550
70
1000
–
µA
DC
GES
GE
R
–
–
G
Ω
Gate Emitter Resistor
R
10
18
26
GE
kΩ
ON CHARACTERISTICS*
Gate Threshold Voltage
V
I
= 1 mA
1.0
1.6
2.1
V
DC
GE(th)
C
V
GE
= V
CE
Threshold Temperature Coefficient (Negative)
Collector–to–Emitter On–Voltage
–
–
–
–
–
4.4
–
mV/°C
V
V
I
C
= 6 A, V
= 4 V
1.25
1.45
1.8
1.8
V
V
CE(on)
GE
I = 10 A,
C
DC
Collector–to–Emitter On–Voltage
CE(on)
DC
V
= 4.5 V,
GE
T = 150°C
J
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
gfs
V
CE
= 5 V, I = 6 A
8.0
15
–
Mhos
pF
C
C
V
= 15 V
= 0 V
–
–
–
700
130
3.5
–
–
–
ISS
CC
Output Capacitance
C
C
V
GE
OSS
Transfer Capacitance
f = 1 MHz
RSS
*Pulse Test: Pulse Width
300 µS, Duty Cycle
2%.
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2
MGP15N40CL, MGB15N40CL, MGC15N40CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
SWITCHING CHARACTERISTICS*
Turn–Off Delay Time
Symbol
Test Conditions
Min
Typ
Max
Unit
t
V
= 300 V,
= 10 A
–
–
–
–
13
6.0
1.0
5.0
–
–
–
–
µSec
d(off)
CC
C
I
Fall Time
t
f
R
= 1 kΩ,
G
L = 300 µH
V = 10 V,
CC
Turn–On Delay Time
Rise Time
t
µSec
d(on)
I
C
= 6.5 A
t
r
R
R
= 1 kΩ,
G
= 1 Ω
= 350 V
= 15 A
L
Q
T
Q
1
Q
2
V
CC
–
–
–
TBD
TBD
TBD
–
–
–
Gate Charge
nC
I
C
V
GE
= 5 V
*Pulse Test: Pulse Width
300 µS, Duty Cycle
2%.
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3
MGP15N40CL, MGB15N40CL, MGC15N40CL
45
40
35
30
25
20
15
10
5
45
V
= 10.0 V
V
V
= 10.0 V
= 5.0 V
V
GE
= 4.0 V
GE
GE
40
35
30
25
20
15
10
5
V = 4.0 V
GE
V
GE
= 5.0 V
GE
V
GE
= 3.0 V
V
GE
= 3.0 V
T = 25°C
j
T = 150°C
j
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
25
20
15
10
5
2.0
1.8
1.5
1.3
1.0
V
= 10 V
I
= 15 A
= 10 A
CE
C
I
C
C
I
= 5 A
T = 150°C
j
0.8
0.5
T = 25°C
j
T = 40°C
V
GE
= 15 V
j
0.3
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
–50 –25
0
25
50
75
100
125 150
V
GE,
GATE TO EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
j
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
2.5
10000
1000
Mean + 4 σ
Mean – 4 σ
I
C
= 1 mA
2.0
1.5
1.0
0.5
0.0
C
ISS
Mean
100
10
C
C
OSS
RSS
1
0
20 40 60 80 100 120 140 160 180 200
–50 –25
0
25
50
75
100
125 150
TEMPERATURE (°C)
V
CE,
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage versus Temperature
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4
MGP15N40CL, MGB15N40CL, MGC15N40CL
20
18
16
14
12
10
20
18
16
14
V
V
= 300 V
= 5.0 V
CC
GE
t
d(off)
T = 25°C
j
C
I
= 10 A
t
d(off)
L = 300 µH
t
f
12
10
8
6
4
2
0
8
6
4
2
0
t
f
V
V
= 300 V
= 5.0 V
CC
GE
T = 150°C
j
C
I
= 10 A
L = 300 µH
250
500
750
1000
250
500
R , GATE RESISTANCE (OHMS)
G
750
1000
R
, GATE RESISTANCE (OHMS)
G
Figure 7. Switching Speed versus Gate Resistance
Figure 8. Switching Speed versus Gate Resistance
20
20
V
V
R
= 300 V
= 5.0 V
= 1000 Ω
CC
GE
G
18
16
18
16
t
d(off)
t
d(off)
I
C
= 10 A
14
12
14
12
L = 300 µH
10
8
10
8
t
f
t
f
V
V
R
= 300 V
= 5.0 V
= 1000 Ω
CC
GE
G
6
4
2
0
6
4
Tj = 150°C
L = 300 µH
2
0
–50 –25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
T , CASE TEMPERATURE (°C)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Switching Speed versus Case Temperature
Figure 10. Total Switching Losses
versus Collector Current
20
30
18
16
14
12
10
8
3.0 mH
6.0 mH
25
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
GE
G
25°C
20
15
10
5
150°C
V
V
R
= 50 V
= 5.0 V
= 1000 Ω
CC
GE
G
6
4
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 11. Latch Current versus Inductor (Typical)
Figure 12. Latch Current versus Temperature (Typical)
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5
MGP15N40CL, MGB15N40CL, MGC15N40CL
PACKAGE DIMENSIONS
TO–220
CASE 221A–09
ISSUE AA
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
0.570 0.620 14.48 15.75
MILLIMETERS
MIN MAX
A
K
Q
Z
A
B
C
D
F
G
H
J
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
9.66 10.28
2
3
U
4.07
0.64
3.61
2.42
2.80
0.46
4.82
0.88
3.73
2.66
3.93
0.64
H
0.110
0.155
0.018 0.025
K
L
N
Q
R
S
T
U
V
Z
0.500 0.562 12.70 14.27
0.045 0.060
0.190 0.210
0.100 0.120
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
L
R
V
J
0.080
0.110
0.045 0.055
0.235 0.255
0.000 0.050
G
D
0.045
–––
N
––– 0.080
2.04
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D2PAK
CASE 418B–03
ISSUE D
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
V
–B–
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
8.64
9.65
4.06
0.51
1.14
MAX
9.65
10.29
4.83
0.89
1.40
A
B
C
D
E
G
H
J
0.340
0.380
0.160
0.020
0.045
0.380
0.405
0.190
0.035
0.055
A
S
1
2
3
0.100 BSC
2.54 BSC
0.080
0.018
0.090
0.575
0.045
0.110
0.025
0.110
2.03
0.46
2.29
2.79
0.64
2.79
–T–
SEATING
K
K
S
V
0.625 14.60
0.055 1.14
15.88
1.40
PLANE
J
G
H
STYLE 3:
PIN 1. ANODE
D 3 PL
2. CATHODE
3. ANODE
4. CATHODE
M
M
0.13 (0.005)
T B
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6
MGP15N40CL, MGB15N40CL, MGC15N40CL
Notes
http://onsemi.com
7
MGP15N40CL, MGB15N40CL, MGC15N40CL
TMOS is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLCproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orotherapplications
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attorneyfees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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For additional information, please contact your local
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*Available from Germany, France, Italy, England, Ireland
MGP15N40CL/D
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