MJ11016 [ONSEMI]

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON; 达林顿功率晶体管互补硅


型号：	MJ11016
厂家：	ONSEMI
描述：	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 达林顿功率晶体管互补硅晶体晶体管功率双极晶体管
文件：	总4页 (文件大小：160K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by MJ11012/D

SEMICONDUCTOR TECHNICAL DATA

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•

High DC Current Gain — h = 1000 (Min) @ I – 20 Adc

FE C

Monolithic Construction with Built–in Base Emitter Shunt Resistor

Junction Temperature to +200 C

*Motorola Preferred Device

MAXIMUM RATINGS

MJ11013 MJ11015

MJ11012 MJ11014 MJ11016

30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

Unit

Vdc

Adc

CEO

120

60–120 VOLTS

200 WATTS

Base Current

Total Device Dissipation @T = 25 C

Derate above 25 C @ T = 100 C

200

1.15

Watts

W/ C

Operating Storage Junction

Temperature Range

T , T

J stg

–55 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

CASE 1–07

TO–204AA

(TO–3)

Thermal Resistance, Junction to Case

0.87

275

θJC

Maximum Lead Temperature for

Soldering Purposes for

10 Seconds.

COLLECTOR

PNP

NPN

MJ11013

MJ11015

MJ11012

MJ11014

MJ11016

BASE

≈

8.0 k

≈

8.0 k

≈

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted.)

Characteristics

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage(1)

Vdc

(BR)CEO

(I = 100 mAdc, I = 0)

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

120

—

Collector–Emitter Leakage Current

mAdc

CER

= 60 Vdc, R

= 90 Vdc, R

= 120 Vdc, R

= 1k ohm)

MJ11012

—

MJ11013, MJ11014

MJ11015, MJ11016

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

= 1k ohm)

= 60 Vdc, R

= 90 Vdc, R

= 120 Vdc, R

= 1k ohm, T = 150 C)

Emitter Cutoff Current

(V = 5 Vdc, I = 0)

—

mAdc

EBO

CEO

Collector–Emitter Leakage Current

(V = 50 Vdc, I = 0)

—

ON CHARACTERISTICS(1)

DC Current Gain

—

(I = 20 Adc,V

= 5 Vdc)

1000

200

—

(I = 30 Adc, V

Collector–Emitter Saturation Voltage

(I = 20 Adc, I = 200 mAdc)

Vdc

CE(sat)

—

(I = 30 Adc, I = 300 mAdc)

Base–Emitter Saturation Voltage

(I = 20 A, I = 200 mAdc)

BE(sat)

—

3.5

(I = 30 A, I = 300 mAdc)

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

—

MHz

(I = 10 A, V

= 3 Vdc, f = 1 MHz)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

Motorola Bipolar Power Transistor Device Data

30 k

20 k

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

0.5

10 k

0.2

0.1

7 k

5 k

0.05

3 k

2 k

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

0.02

0.01

= 3 Vdc

700

500

= 10 mAdc

= 5 Vdc

= 25°C

0.005

= 25°C

300

0.3

0.5 0.7

100

200 300

500 700 1.0 k

, COLLECTOR CURRENT (AMP)

f, FREQUENCY (kHz)

Figure 2. DC Current Gain (1)

Figure 3. Small–Signal Current Gain

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

= 25°C

/I = 100

C B

0.5

0.2

BONDING WIRE LIMITATION

BE(sat)

0.1

0.05

THERMAL LIMITATION @ T = 25°C

SECOND BREAKDOWN LIMITATION

CE(sat)

0.02

0.01

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

0.1

0.2

0.5

100

50 70 100

200

, COLLECTOR CURRENT (AMP)

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages (1)

Figure 5. Active Region DC Safe Operating Area

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

breakdown. Safe operating area curves indicate I – V

lim-

its of the transistor that must be observed for reliable opera-

tions e.g., the transistor must not be subjected to greater

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

SEATING

PLANE

–T–

D 2 PL

0.13 (0.005)

INCHES

MIN MAX

1.550 REF

MILLIMETERS

DIM

MIN

MAX

39.37 REF

–––

0.250

0.038

0.055

1.050

–––

6.35

0.97

1.40

26.67

8.51

1.09

1.77

–Y–

0.335

0.043

0.070

0.430 BSC

0.215 BSC

0.440 0.480

0.665 BSC

10.92 BSC

5.46 BSC

11.18

12.19

16.89 BSC

–––

0.151

1.187 BSC

0.131

0.830

–––

3.84

30.15 BSC

3.33

21.08

4.19

–Q–

0.165

0.188

0.13 (0.005)

T Y

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

MJ11012/D

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