MJ15001 [ONSEMI]
POWER TRANSISTORS COMPLEMENTARY SILICON; 功率晶体管互补硅
| 型号： | MJ15001 |
| 厂家： | 
ONSEMI |
| 描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 文件： | 总4页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJ15001/D
SEMICONDUCTOR TECHNICAL DATA
The MJ15001 and MJ15002 are EpiBase power transistors designed for high
power audio, disk head positioners and other linear applications.
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
•
High Safe Operating Area (100% Tested) —
200 W @ 40 V
50 W @ 100 V
For Low Distortion Complementary Designs
High DC Current Gain —
•
•
140 VOLTS
200 WATTS
h
FE
= 25 (Min) @ I = 4 Adc
C
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
140
140
5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
Collector Current — Continuous
Base Current — Continuous
Emitter Current — Continuous
I
C
15
I
5
B
E
I
20
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
200
1.14
Watts
W/ C
Operating and Storage Junction Temperature Range
T , T
–65 to +200
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.875
265
Unit
C/W
C
Thermal Resistance, Junction to Case
R
θJC
Maximum Lead Temperature for Soldering Purposes:
T
L
1/16″ from Case for
10 seconds
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
140
—
Vdc
CEO(sus)
(I , = 200 mAdc, I = 0)
C
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
= 140 Vdc, V
= 140 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
100
2
µAdc
mAdc
BE(off)
BE(off)
C
Collector Cutoff Current
(V = 140 Vdc, I = 0)
I
—
250
µAdc
µAdc
CEO
CE
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
B
I
—
100
EBO
EB
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
C
I
Adc
S/b
(V
CE
(V
CE
= 40 Vdc, t = 1 s (non–repetitive))
= 100 Vdc, t = 1 s (non–repetitive))
5
0.5
—
—
ON CHARACTERISTICS
DC Current Gain
(I = 4 Adc, V
C CE
h
25
—
—
150
1
—
FE
= 2 Vdc)
Collector–Emitter Saturation Voltage
(I = 4 Adc, I = 0.4 Adc)
V
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 4 Adc, V = 2 Vdc)
V
2
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
2
—
MHz
pF
T
(I = 0.5 Adc, V
C CE
= 10 Vdc, f = 0.5 MHz)
test
Output Capacitance
(V = 10 Vdc, I = 0, f
C
—
1000
ob
= 1 MHz)
CB test
E
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
T
= 25°C
C
10
down. Safe operating area curves indicate I – V
limits of
C
CE
7
5
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
3
2
The data of Figure 1 is based on T
= 200 C; T is
C
J (pk)
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
T
= 200°C
J
1
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.7
0.5
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
2
3
5
7
10
20
30
50 70 100
200
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active–Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
1000
700
500
10
9
8
7
6
5
T
= 25°C
J
C
C
ib
MJ15002 (PNP)
300
200
ib
T
V
= 25°C
J
C
C
ob
= 10 V
CE
100
70
f
= 0.5 MHz
test
4
3
2
50
ob
MJ15001 (NPN)
30
20
MJ15001 (NPN)
MJ15002 (PNP)
1
0
10
1.5 2
3
5
7
10
20
30
50 70 100 150
0.1
0.2 0.3
0.5 0.7
I , COLLECTOR CURRENT (AMP)
C
1
2
3
5
7
10
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 2. Capacitances
Figure 3. Current–Gain — Bandwidth Product
MJ15001
MJ15002
200
100
200
100
V
= 2 Vdc
V
= 2 Vdc
CE
CE
T
= 100°C
J
T
= 100°C
J
25°C
70
50
70
50
25°C
30
20
30
20
10
10
7
5
7
5
3
2
3
2
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
I
, COLLECTOR CURRENT (AMP)
I
, COLLECTOR CURRENT (AMP)
C
C
Figure 4. DC Current Gain
MJ15001
MJ15002
2.0
2.0
1.6
1.6
1.2
0.8
0.4
0
1.2
0.8
V
@ V
CE
= 2 Vdc
V
BE
@ V = 2 Vdc
CE
BE
T
J
= 25°C
T
= 25
°
C
J
T
= 100°C
T
= 100°C
J
J
100°C
0.4
100°C
V @ I /I = 10
CE(sat) C B
V
@ I /I = 10
C B
CE(sat)
25°C
25°C
0
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
0.2 0.3
0.5 0.7
1
2
3
5
7
10
20
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 5. “On” Voltages
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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MJ15001/D
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