MJD340TF [ONSEMI]
0.5 A, 300 V High Voltage NPN Bipolar Power Transistor;
| 型号： | MJD340TF |
| 厂家： | 
ONSEMI |
| 描述： | 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor |
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD340ꢀ(NPN),
MJD350ꢀ(PNP)
High Voltage Power
Transistors
DPAK for Surface Mount Applications
www.onsemi.com
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
2, 4
COLLECTOR
2, 4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
1
Compliant
BASE
BASE
MAXIMUM RATINGS
3
3
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
300
300
3
Unit
Vdc
Vdc
Vdc
Adc
Adc
EMITTER
EMITTER
V
CEO
V
CB
4
V
EB
2
1
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
I
C
0.5
0.75
3
I
CM
DPAK
CASE 369C
STYLE 1
P
D
D
@ T = 25°C
15
0.12
W
W/°C
C
Derate above 25°C
MARKING DIAGRAM
Total Power Dissipation (Note 1)
P
@ T = 25°C
1.56
0.012
W
W/°C
A
Derate above 25°C
AYWW
J3x0G
Operating and Storage Junction
Temperature Range
T , T
−65 to +150
°C
J
stg
ESD − Human Body Model
HBM
V
MJD340 (NPN)
MJD350 (PNP)
3B
2
A
Y
= Assembly Location
= Year
ESD − Machine Model
MM
V
MJD340 (NPN)
MJD350 (PNP)
M4
M4
WW = Work Week
J3x0 = Device Code
x= 4 or 5
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2016 − Rev. 12
MJD340/D
MJD340 (NPN), MJD350 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
80
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction−to−Case
R
R
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 2)
Leading Temperature for Soldering Purpose
q
T
260
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
V
V
CEO(sus)
(I = 1 mA, I = 0)
300
−
−
C
B
Collector Cutoff Current
(V = 300 V, I = 0)
I
mA
mA
CEO
0.1
0.1
CB
E
Emitter Cutoff Current
(V = 3 V, I = 0)
I
EBO
−
BE
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
−
V
V
FE
(I = 50 mA, V = 10 V)
30
−
240
1
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mA, I = 10 mA)
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = 1 A, V = 10 V)
V
BE(on)
−
1.5
C
CE
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
f
T
MHz
(I = 50 mA, V = 10 V, f = 10 MHz)
10
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
MJD340 (NPN), MJD350 (PNP)
TYPICAL CHARACTERISTICS
MJD340
300
200
V
V
= 2 V
= 10 V
CE
CE
T = 150°C
J
100
70
+100°C
+ꢀ25°C
50
30
20
-ꢀ55°C
10
1
2
3
5
7
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. DC Current Gain
MJD340
1
0.8
0.6
0.4
0.2
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
V
BE
@ V = 10 V
CE
V
@ I /I = 10
C B
CE(sat)
I /I = 5
C B
0
10
20 30
50
100
200 300
500
I , COLLECTOR CURRENT (mA)
C
Figure 2. “On” Voltages
MJD350
MJD350
1
200
1
T = 150°C
J
T = 25°C
J
0.8
0.6
0.4
0.2
0
25°C
100
70
V
@ I /I = 10
C B
BE(sat)
V
BE
@ V = 10 V
CE
-ꢀ55°C
50
I /I = 10
C B
30
20
V
= 2 V
= 10 V
CE
V
CC
V
CE(sat)
I /I = 5
C B
10
5
7
10
20 30
50 70 100
200 300
500
5
7
10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. “On” Voltages
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3
MJD340 (NPN), MJD350 (PNP)
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
P
(pk)
0.1
R
R
= r(t) R
q
JC
q
q
JC(t)
= 8.33°C/W MAX
0.05
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
t
1
READ TIME AT t
t
2
1
T
- T = P q
C (pk) JC(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
0.03
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30 50
100
200 300 500
1 k
t, TIME (ms)
Figure 5. Thermal Response
1000
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
100 ms
300
200
500 ms
C
CE
1 ms
dc
100
50
30
20
The data of Figure 6 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
10
5
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150_C.
T
may be calculated from the data in
J(pk)
3
2
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1
10
20 30
50 70 100
200 300
500 700 1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
T
A
T
C
2.5 25
2
20
1.5 15
T
A
T
1
0.5
0
10
5
C
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 7. Power Derating
www.onsemi.com
4
MJD340 (NPN), MJD350 (PNP)
ORDERING INFORMATION
†
Device
Package
Shipping
MJD340G
DPAK
(Pb−Free)
75 Units / Rail
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
75 Units / Rail
MJD340RLG
MJD340T4G
NJVMJD340T4G
MJD350G
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
MJD350T4G
NJVMJD350T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
2,500 / Tape & Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MJD340 (NPN), MJD350 (PNP)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
A
D
E
C
A
b3
B
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
SOLDERING FOOTPRINT*
4. COLLECTOR
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MJD340/D
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