MJD42C [ONSEMI]
Complementary Power Transistors; 互补功率晶体管
| 型号： | MJD42C |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Power Transistors |
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD41C (NPN)
MJD42C (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
6 AMPERES
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
100 VOLTS
20 WATTS
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP41 and TIP42 Series
• Monolithic Construction With Built−in Base − Emitter Resistors
• Epoxy Meets UL 94, V−0 @ 0.125 in.
MARKING
DIAGRAMS
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
4
DPAK
CASE 369C
STYLE 1
YWW
J4xC
2
1
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
100
100
5
Unit
Vdc
Vdc
Vdc
Adc
4
V
CEO
DPAK−3
CASE 369D
STYLE 1
YWW
J4xC
V
CB
EB
V
1
2
I
C
6
10
Collector Current − Continuous
Peak
3
Y
= Year
Base Current
I
B
2
Adc
WW
x
= Work Week
= 1 or 2
P
D
20
0.16
W
W/°C
Total Power Dissipation @ T = 25°C
C
Derate above 25°C
P
D
1.75
0.014
Total Power Dissipation* @ T = 25°C
W
W/°C
A
ORDERING INFORMATION
Derate above 25°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Operating and Storage Junction
Temperature Range
T , T
−65 to
+150
°C
J
stg
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
6.25
71.4
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
R
q
JC
JA
R
q
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 5
MJD41C/D
MJD41C (NPN) MJD42C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I = 30 mAdc, I = 0)
V
100
−
−
Vdc
mAdc
mAdc
mAdc
CEO(sus)
C
B
I
50
10
0.5
Collector Cutoff Current
(V = 60 Vdc, I = 0)
CEO
CE
B
I
−
Collector Cutoff Current
(V = 100 Vdc, V = 0)
CES
CE
EB
I
−
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
EBO
BE
C
ON CHARACTERISTICS (Note 1)
h
FE
−
DC Current Gain
(I = 0.3 Adc, V = 4 Vdc)
30
15
−
75
C
CE
(I = 3 Adc, V = 4 Vdc)
C
CE
V
−
1.5
2
Vdc
Vdc
Collector−Emitter Saturation Voltage
(I = 6 Adc, I = 600 mAdc)
CE(sat)
C
B
V
−
Base−Emitter On Voltage
(I = 6 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
3
−
MHz
−
Current Gain − Bandwidth Product (Note 2)
T
(I = 500 mAdc, V = 10 Vdc, f = 1 MHz)
test
C
CE
h
20
—
Small−Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1 kHz)
fe
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f = h • f
.
test
T
fe
ORDERING INFORMATION
Device
†
Package Type
DPAK
Package
369C
369C
369C
369D
369C
369C
Shipping
MJD41CRL
1800 Tape & Reel
2500 Tape & Reel
75 Units / Rail
MJD41CT4
DPAK
MJD42C
DPAK
MJD42C1
DPAK−3
DPAK
75 Units / Rail
MJD42CRL
1800 Tape & Reel
2500 Tape & Reel
MJD42CT4
DPAK
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MJD41C (NPN) MJD42C (PNP)
TYPICAL CHARACTERISTICS
T
T
C
V
CC
+ꢀ30 V
A
2.5 25
R
C
2
20
25 ms
SCOPE
+11 V
R
B
0
1.5 15
T
C
D
1
51
−ꢀ9 V
T SURFACE MOUNT
A
1
10
t , t ≤ 10 ns
r
f
DUTY CYCLE = 1%
−ꢀ4 V
0.5
0
5
0
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
ꢃD MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃMSB5300 USED ABOVE I ≈ 100 mA
B
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
B
REVERSE ALL POLARITIES FOR PNP.
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
500
T = 25°C
J
300
200
V
CE
= 2 V
V
CC
I /I = 10
= 30 V
T = 150°C
J
C B
0.7
0.5
100
70
25°C
0.3
0.2
t
r
50
30
20
0.1
−ꢀ55°C
0.07
t @ V
d
≈ 5 V
BE(off)
0.05
10
7
0.03
0.02
5
0.06
0.2 0.3 0.4 0.6
1
2
4
6
0.06
0.2
0.4 0.6
1
2
4
6
0.1
0.1
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 3. DC Current Gain
Figure 4. Turn−On Time
5
2
1.6
1.2
0.8
0.4
0
T = 25°C
J
T = 25°C
3
2
J
V
CC
I /I = 10
= 30 V
C B
t
s
I = I
B1 B2
1
0.7
0.5
V
@ I /I = 10
C B
CE(sat)
0.3
0.2
V
BE
@ V = 4 V
CE
t
f
0.1
0.07
0.05
V
@ I /I = 10
C B
BE(sat)
0.06
0.2 0.3 0.4 0.6
1
2
3
4
6
0.06
0.2
0.4 0.6
1
2
4
6
0.1
0.1
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 5. “On” Voltages
Figure 6. Turn−Off Time
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3
MJD41C (NPN) MJD42C (PNP)
2
300
T = 25°C
J
T = 25°C
J
200
1.6
I
C
= 1 A
2.5 A
5 A
C
C
ib
1.2
0.8
0.4
0
100
70
ob
50
30
0.5
1
2
3
5
10
20 30
50
10
20 30
50
100
200 300 500
1000
V , REVERSE VOLTAGE (VOLTS)
R
I , BASE CURRENT (mA)
B
Figure 8. Capacitance
Figure 7. Collector Saturation Region
1
0.7
D = 0.5
0.2
0.5
0.3
0.2
P
(pk)
R
R
= r(t) R
q
JC
q
JC(t)
0.1
= 6.25°C/W MAX
q
JC
0.1
0.07
0.05
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.02
1
t
2
T
− T = P q
C (pk) JC(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
0.01
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500
1000
t, TIME (ms)
Figure 9. Thermal Response
10
5
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100ꢂms
500ꢂms
3
2
breakdown. Safe operating area curves indicate I − V
C
CE
1ꢂms
dc
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5ꢂms
1
0.5
0.3
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The data of Figure 10 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
CURVES APPLY BELOW RATED V
CEO
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
0.05
0.03
v 150_C.
T
may be calculated from the data in
J(pk)
T
= 25°C SINGLE PULSE
C
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
T = 150°C
J
MJD41C, 42C
0.01
1
2
3
5
7
10
20 30
50 70 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias
Safe Operating Area
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4
MJD41C (NPN) MJD42C (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
PLANE
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
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5
MJD41C (NPN) MJD42C (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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MJD41C/D
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