MJD6039 [ONSEMI]
Darlington Power Transistors; 达林顿功率晶体管
| 型号： | MJD6039 |
| 厂家： | 
ONSEMI |
| 描述： | Darlington Power Transistors |
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD6039
Darlington Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
http://onsemi.com
SILICON
POWER TRANSISTORS
4 AMPERES,
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
80 VOLTS, 20 WATTS
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain − h = 2500 (Typ) @ I = 4.0Adc
FE
C
4
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
2
1
Machine Model, C u 400 V
3
• Pb−Free Package is Available
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
80
80
5
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CB
EB
MARKING DIAGRAM
V
Collector Current − Continuous
Collector Current − Peak
I
4
8
C
YWW
J
Base Current
I
100
mAdc
B
6039G
P
P
20
0.16
W
W/°C
Total Power Dissipation @ T = 25°C
D
D
C
Derate above 25°C
Total Power Dissipation (Note 1)
1.75
W
@ T = 25°C
A
0.014
Derate above 25°C
W/°C
°C
Y
= Year
Operating and Storage Junction
Temperature Range
T , T
−65 to +150
J
stg
WW
J6039
G
= Work Week
= Device Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
6.25
71.4
Unit
°C/W
°C/W
ORDERING INFORMATION
Thermal Resistance, Junction−to−Case
R
q
JC
†
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
Device
Package
Shipping
MJD6039T4
DPAK
2500 / Tape & Reel
2500 / Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MJD6039T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
MJD6039/D
+8 V
MJD6039
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
80
−
−
Vdc
Collector−Emitter Sustaining Voltage
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
I
10
mAdc
Collector−Cutoff Current
(V = 40 Vdc, I = 0)
CEO
CE
B
ON CHARACTERISTICS (Note 2)
h
FE
−
DC Current Gain
(I = 1 Adc, V = 4 Vdc)
1000
500
−
−
C
CE
(I = 2 Adc, V = 4 Vdc)
C
CE
V
−
2.5
Vdc
Vdc
Collector−Emitter Saturation Voltage
(I = 2 Adc, I = 8 mAdc)
CE(sat)
C
B
V
−
2.8
Base−Emitter On Voltage
(I = 2 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
h
25
−
−
−
Small−Signal Current Gain
fe
(I = 0.75 Adc, V = 10 Vdc, f = 1 kHz)
C
CE
C
ob
pF
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
100
CB
E
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4
2
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
CC
−ꢂ30 V
B
C
ꢃD , MUST BE FAST RECOVERY TYPE, e.g.:
V
= 30 V
I
= I
CC
B1 B2
t
s
1
I /I = 250 T = 25°C
C B
J
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
B
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
B
R
C
SCOPE
TUT
V
APPROX
t
2
R
f
B
1
0.8
≈ 8 k ≈ 120
D
51
1
0
t
r
0.6
0.4
V
1
APPROX
−12 V
+ 4 V
25 ms
t @ V
d
= 0
BE(off)
PNP
NPN
FOR t AND t , D IS DISCONNECTED
d 1
AND V = 0
r
t , t ≤ 10 ns
r
f
DUTY CYCLE = 1%
2
0.2
0.04
0.1
0.2
0.4 0.6
1
2
4
0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
I , COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
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2
MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
0.05
= 6.25°C/W
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
1
t
2
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
0.03
0.02
SINGLE
PULSE
DUTY CYCLE, D = t /t
1 2
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20
50
100
200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
T
A
T
C
10
7
2.5 25
0.1ꢁms
0.5ꢁms
5
2
20
3
2
5ꢁms
T
C
1.5 15
1ꢁms
1
0.7
0.5
1
0.5
0
10
5
T
BONDING WIRE LIMIT
THERMAL LIMIT
A
SURFACE
MOUNT
dc
SECOND BREAKDOWN LIM-
IT
0.3
0.2
T = 150°C
J
CURVES APPLY BELOW RATED V
CEO
0.1
0
1
2
3
5
7
10
20 30
50 70 100
25
50
75
100
125
150
T, TEMPERATURE (°C)
V
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
CE
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T = 25°C
C
breakdown. Safe operating area curves indicate I − V
C
CE
100
70
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
The data of Figures 6 and 7 is based on T
T is variable depending on conditions. Second breakdown
C
= 150°C;
J(pk)
C
ob
30
20
C
ib
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
may be calculated from the data in Figure 5.
J(pk)
PNP
NPN
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.04 0.06 0.1
0.2 0.4 0.6
1
2
4
6
10
20
40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
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3
MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
3.4
6 k
V
= 3 V
T = 125°C
J
T = 125°C
J
CE
4 k
3 k
3
2.6
2.2
1.8
I =
C
0.5 A
25°C
2 k
1 A
2 A
4 A
−ꢂ55°C
1 k
800
1.4
1
600
400
300
0.6
0.1
0.2
0.5
1
2
5
10
20
50
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
100
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (mA)
B
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1
+ 0.8
0
*APPLIED FOR I /I < h /3
C B FE
T = 25°C
J
V
@ I /I = 250
C B
BE(sat)
− 0.8
− 1.6
− 2.4
− 3.2
25°C to 150°C
V
@ V = 3 V
CE
BE
q
for V
CE(sat)
VC
− 55°C to 25°C
V
@ I /I = 250
C B
CE(sat)
25°C to 150°C
0.6
0.2
q
for V
BE
VC
25°C to 150°C
− 4
− 4.8
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
0.04 0.06 0.1
0.2
0.4 0.6
1
2
3
4
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
5
10
REVERSE
FORWARD
4
10
10
10
COLLECTOR
NPN
MJD6039
V
= 30 V
3
2
CE
T = 150°C
J
BASE
1
0
10
≈ 8 k
≈ 60
10
100°C
25°C
−1
10
−
0
.6
−
0
.4 −ꢂ0.2
0
+ꢂ0.2 +ꢂ0.4 +ꢂ0.6
+ꢂ0.8 +ꢂ1 +ꢂ1.2 +ꢂ1.4
EMITTER
V
, BASE−EMITTER VOLTAGE (VOLTS)
BE
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
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4
MJD6039
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MJD6039/D
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