MJE18004D2BC [ONSEMI]
5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN;
| 型号： | MJE18004D2BC |
| 厂家： | 
ONSEMI |
| 描述： | 5A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN 局域网 晶体管 |
| 文件： | 总11页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE18004G, MJF18004G
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
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Features
POWER TRANSISTOR
5.0 AMPERES
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain h
FE
♦ Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
1000 VOLTS
35 and 75 WATTS
• Full Characterization at 125_C
• ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
COLLECTOR
2,4
• Two Package Choices: Standard TO−220 or Isolated TO−220
• MJF18004, Case 221D, is UL Recognized at 3500 V
: File
RMS
1
#E69369
BASE
• These Devices are Pb−Free and are RoHS Compliant*
3
MAXIMUM RATINGS
EMITTER
Rating
Symbol
Value
450
1000
9.0
Unit
MARKING
DIAGRAMS
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
V
CEO
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
V
V
CES
EBO
4
V
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
C
5.0
I
10
MJE18004G
AYWW
CM
Base Current
Base Current
− Continuous
I
B
2.0
TO−220AB
CASE 221A−09
STYLE 1
− Peak (Note 1)
I
4.0
BM
1
2
RMS Isolation Voltage (Note 2)
V
ISOL
MJF18004
4500
3
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
3500
1500
(for 1 sec, R.H. < 30%, T = 25_C)
A
Total Device Dissipation @ T = 25_C
P
D
W
W/_C
C
MJE18004
MJF18004
MJE18004
MJF18004
75
35
0.6
0.28
TO−220 FULLPACK
CASE 221D
MJF18004G
AYWW
Derate above 25°C
STYLE 2
UL RECOGNIZED
1
Operating and Storage Temperature
T , T
−65 to 150
_C
J
stg
2
3
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
Thermal Resistance, Junction−to−Case
R
_C/W
q
JC
MJE18004
MJF18004
1.65
3.55
WW
= Work Week
Thermal Resistance, Junction−to−Ambient
R
62.5
260
_C/W
_C
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2. Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 11
MJE18004/D
MJE18004G, MJF18004G
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
450
−
−
−
Vdc
mAdc
mAdc
C
CEO(sus)
Collector Cutoff Current (V = Rated V
, I = 0)
I
CEO
−
100
CE
CEO
CES
B
Collector Cutoff Current (V = Rated V
, V = 0)
EB
(T = 25_C)
C
I
−
−
−
−
−
−
100
500
100
CE
CES
(T = 125_C)
C
Collector Cutoff Current (V = 800 V, V = 0)
(T = 125_C)
C
CE
EB
Emitter Cutoff Current (V = 9.0 Vdc, I = 0)
I
−
−
100
mAdc
EB
C
EBO
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc)
V
V
−
−
0.82
0.92
1.1
1.25
Vdc
Vdc
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc)
C
B
Collector−Emitter Saturation Voltage
CE(sat)
(I = 1.0 Adc, I = 0.1 Adc)
0.5
0.6
0.45
0.8
C
B
−
−
−
−
−
0.25
0.29
0.3
0.36
0.5
(T = 125_C)
C
(I = 2.0 Adc, I = 0.4 Adc)
C
B
(T = 125_C)
C
(I = 2.5 Adc, I = 0.5 Adc)
0.75
C
B
DC Current Gain (I = 1.0 Adc, V = 2.5 Vdc)
h
FE
12
−
14
−
6.0
−
10
21
20
−
32
11
7.5
22
−
−
34
−
−
−
−
C
CE
(T = 125_C)
C
DC Current Gain (I = 0.3 Adc, V = 5.0 Vdc)
C
CE
(T = 125_C)
C
DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc)
C
CE
(T = 125_C)
C
DC Current Gain (I = 10 mAdc, V = 5.0 Vdc)
−
C
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)
f
−
−
−
13
50
−
MHz
pF
C
CE
T
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
65
CB
E
ob
Input Capacitance (V = 8.0 V)
C
800
1000
pF
EB
ib
CE(dsat)
Dynamic Saturation Voltage:
V
−
−
6.8
14
−
−
Vdc
1.0 ms
3.0 ms
1.0 ms
3.0 ms
(I = 1.0 Adc
(T = 125°C)
C
C
I
= 100 mAdc
Determined 1.0 ms and
3.0 ms respectively after
B1
−
−
2.4
5.6
−
−
V
CC
= 300 V)
(T = 125°C)
C
rising I reaches 90% of
B1
final I
B1
−
−
11.3
15.5
−
−
(see Figure 18)
(I = 2.0 Adc
(T = 125°C)
C
C
I
= 400 mAdc
B1
−
−
1.3
6.1
−
−
V
CC
= 300 V)
(T = 125°C)
C
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2
MJE18004G, MJF18004G
ELECTRICAL CHARACTERISTICS — continued (T = 25_C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
Turn−On Time
Storage Time
Fall Time
(I = 1.0 Adc, I = 0.1 Adc,
t
t
t
t
t
−
−
210
180
300
−
ns
ms
ns
ms
ns
ms
ns
C
B1
on
off
on
off
on
I
= 0.5 Adc, V = 300 V)
(T = 125°C)
B2
CC
C
−
−
1.0
1.3
1.7
−
(T = 125°C)
C
(I = 2.0 Adc, I = 0.4 Adc,
−
−
75
90
110
−
C
B1
I
B1
= 1.0 Adc, V = 300 V)
(T = 125°C)
C
CC
−
−
1.5
1.8
2.5
−
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
−
−
450
900
800
1400
C
B1
I
B2
= 0.5 Adc, V = 250 V)
(T = 125°C)
C
CC
t
−
−
2.0
2.2
3.0
3.5
s
(T = 125°C)
C
t
f
−
−
275
500
400
800
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 mH)
CC
clamp
Fall Time
(I = 1.0 Adc, I = 0.1 Adc,
t
fi
−
−
100
100
150
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
C
B1
I
B2
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
−
−
1.1
1.4
1.7
−
(T = 125°C)
C
t
−
−
180
160
250
−
c
fi
(T = 125°C)
C
(I = 2.0 Adc, I = 0.4 Adc,
t
−
−
90
150
175
−
C
B1
I
B2
= 1.0 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
−
−
1.7
2.2
2.5
−
(T = 125°C)
C
t
−
−
180
250
300
−
c
fi
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
t
−
−
70
100
130
175
C
B1
I
B2
= 0.5 Adc,
(T = 125°C)
C
V
BE(off)
= −ꢀ5.0 Vdc)
Storage Time
Crossover Time
t
si
−
−
0.75
1.0
1.0
1.3
(T = 125°C)
C
t
c
−
−
250
250
350
500
(T = 125°C)
C
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3
MJE18004G, MJF18004G
TYPICAL STATIC CHARACTERISTICS
100
100
10
1
V
CE
= 1 V
V
CE
= 5 V
T = 125°C
T = 125°C
J
J
T = -ꢀ20°C
J
T = -ꢀ20°C
J
T = 25°C
J
T = 25°C
J
10
1
0.01
0.01
0.10
1.00
10.00
0.10
1.00
10.00
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2.0
1.5
1.0
10.00
1.00
T = 25°C
J
1.5 A
2 A 3 A
4 A
1 A
I /I = 10
C B
0.10
0.01
0.5
0
I /I = 5
C B
T = 25°C
T = 125°C
J
J
I = 0.5 A
C
0.01
0.10
1.00
10.00
0.01
0.10
COLLECTOR CURRENT (AMPS)
C,
1.00
10.00
I , BASE CURRENT (AMPS)
B
I
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.1
1.0
10000
1000
100
T = 25°C
J
f = 1 MHz
C
C
ib
0.9
0.8
0.7
ob
T = 25°C
J
0.6
0.5
0.4
10
1
T = 125°C
J
I /I = 10
C B
I /I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
I , COLLECTOR CURRENT (AMPS)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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4
MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
1800
1600
1400
1200
1000
800
3000
2500
2000
1500
1000
I /I = 5
C B
I
= I /2
B(off) C
= 300 V
I
= I /2
B(off) C
= 300 V
T = 25°C
T = 125°C
J
J
T = 25°C
T = 125°C
J
V
CC
PW = 20 ms
J
V
CC
PW = 20 ms
I /I = 5
C B
I /I = 10
C B
I /I = 10
C B
600
400
500
0
200
0
0
1
2
3
4
5
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
V = 300 V
Z
V = 300 V
Z
T = 25°C
T = 125°C
J
J
V
I
= 15 V
= I /2
CC
V
= 15 V
= I /2
CC
I /I = 5
C B
B(off)
C
I
B(off) C
L = 200 mH
C
L = 200 mH
C
I = 2 A
C
1000
500
T = 25°C
T = 125°C
J
I = 1 A
C
J
500
0
I /I = 10
C B
0
1
2
3
4
5
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
I COLLECTOR CURRENT (AMPS)
C
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
200
150
100
250
200
150
100
T = 25°C
T = 125°C
J
J
t
fi
t
c
t
c
V = 300 V
Z
V = 300 V
Z
V
I
= 15 V
= I /2
50
0
V
I
= 15 V
= I /2
CC
CC
T = 25°C
T = 125°C
J
50
0
J
B(off)
C
B(off)
C
t
fi
L = 200 mH
C
L = 200 mH
C
0
1
2
3
4
5
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching, tc and tfi, IC/IB = 5
Figure 12. Inductive Switching, tc and tfi, IC/IB = 10
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MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
160
150
140
130
120
110
300
250
200
150
100
50
V = 300 V
Z
V = 300 V
Z
T = 25°C
T = 125°C
J
J
V
I
= 15 V
= I /2
V
I
= 15 V
= I /2
CC
CC
I = 1 A
C
B(off)
C
B(off)
C
L = 200 mH
C
L = 200 mH
C
I = 2 A
C
100
90
I = 2 A
C
T = 25°C
J
80
T = 125°C
J
I = 1 A
C
70
3
4
5
6
7
8
9
10 11 12 13 14 15
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
h
FE
, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
6.0
T
≤ 125°C
C
DC (MJE18004)
5ꢁms
I /I ≥ 4
C B
L = 500 mH
5.0
1ꢁms
50ꢁms 10ꢁms 1ꢁms
C
10
1.0
4.0
Extended
SOA
3.0
2.0
DC (MJF18004)
0.1
-ꢀ5 V
1.0
0
V
=
-1.5 V
BE(off)
0 V
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
400
500
600
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
700
800
900
1000
1100
V
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Safe Operating Area
There are two limitations on the power handling ability of a tran-
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC−VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC ≥ 25°C. Second break-
down limitations do not derate the same as thermal limitations. Al-
lowable current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figures 20 and 21. At any
case temperatures, thermal limitations will reduce the power that
can be handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base−to−emitter
junction reverse biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava-
lanche mode.
1.0
SECOND
BREAKDOWN
DERATING
0.8
0.6
0.4
0.2
0
THERMAL
DERATING
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
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MJE18004G, MJF18004G
10
5
4
V
CE
90% I
I
C
C
9
8
7
6
5
t
fi
3
dyn 1 ms
t
si
2
dyn 3 ms
1
t
c
10% I
C
V
10% V
CLAMP
0
CLAMP
-1
-2
-3
-4
-5
4
3
2
1
0
90% I
B
I
B
90% I 1
B
1 ms
3 ms
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I PEAK
C
100 mF
1 mF
MTP8P10
MUR105
MJE210
100 W
3 W
150 W
3 W
V
CE
PEAK
V
CE
MTP8P10
MPF930
R
R
B1
I 1
B
I
MPF930
+10 V
out
I
B
A
I 2
B
50 W
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
RBSOA
COMMON
MTP12N10
150 W
3 W
L = 500 mH
RB2 = 0
RB2 = ∞
500 mF
V
= 20 VOLTS
I (pk) = 100 mA
V
CC
= 15 VOLTS
V
CC
= 15 VOLTS
CC
RB1 SELECTED FOR
DESIRED I 1
RB1 SELECTED
FOR DESIRED I 1
C
1 mF
B
B
-V
off
Table 1. Inductive Load Switching Drive Circuit
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MJE18004G, MJF18004G
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
P
(pk)
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
0.10
= 1.25°C/W MAX
0.1
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
1
0.05
0.02
1
t
2
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.10
0.01
0.01
1.00
10.00
100.00
1000
10000
100000
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18004
1.00
D = 0.5
0.2
P
(pk)
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
0.10
0.1
= 3.12°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.05
0.02
t
1
1
t
2
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.01
0.10
1.00
10.00
100.00
1000
t, TIME (ms)
Figure 21. Typical Thermal Response for MJF18004
ORDERING INFORMATION
Device
Package
Shipping
MJE18004G
TO−220AB
(Pb−Free)
50 Units / Rail
MJF18004G
TO−220 (Fullpack)
(Pb−Free)
50 Units / Rail
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MJE18004G, MJF18004G
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
CLIP
0.099″ MIN
0.099″ MIN
LEADS
LEADS
LEADS
HEATSINK
HEATSINK
HEATSINK
0.110″ MIN
Figure 22a. Screw or Clip Mounting
Position for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw−Mounted
Figure 23b. Clip−Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
.
screw torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom-
.
mend exceeding 10 in lbs of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
9
MJE18004G, MJF18004G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
http://onsemi.com
10
MJE18004G, MJF18004G
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
1.00
3.28
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
−Y−
G
H
J
0.100 BSC
2.54 BSC
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 2:
PIN 1. BASE
M
M
0.25 (0.010)
B
Y
2. COLLECTOR
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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