MJW18020_10 [ONSEMI]

NPN Silicon Power Transistors High Voltage Planar; NPN硅功率晶体管高压平面


型号：	MJW18020_10
厂家：	ONSEMI
描述：	NPN Silicon Power Transistors High Voltage Planar NPN硅功率晶体管高压平面晶体晶体管高压
文件：	总5页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJW18020

NPN Silicon Power

Transistors High Voltage

Planar

The MJW18020 planar High Voltage Power Transistor is

specifically Designed for motor control applications, high power

supplies and UPS’s for which the high reproducibility of DC and

Switching parameters minimizes the dead time in bridge

configurations.

http://onsemi.com

30 AMPERES

1000 VOLTS BV_CES

450 VOLTS BV_CEO,250 WATTS

Features

• High and Excellent Gain Linearity

• Fast and Very Tight Switching Times Parameters t and t

• Very Stable Leakage Current due to the Planar Structure

• High Reliability

• Pb−Free Package is Available*

MAXIMUM RATINGS

TO−247

CASE 340L

Rating

Symbol

Value

450

Unit

Vdc

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Collector−Base Voltage

CEO

1000

9.0

CES

CBO

MARKING DIAGRAM

Emitter−Base Voltage

EBO

Collector Current − Continuous

− Peak (Note 1)

Adc

Base Current

− Continuous

− Peak (Note 1)

6.0

Adc

MJW18020

AYWWG

Total Power Dissipation @ T = 25_C

250

2.0

W/_C

Derate Above 25_C

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

1 BASE

3 EMITTER

2 COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.5

Unit

_C/W

= Assembly Location

= Year

WW = Work Week

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

= Pb−Free Package

Maximum Lead Temperature for Soldering

Purposes: 1/8” from Case for 5 Seconds

275

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Device

Package

Shipping

MJW18020

TO−247

30 Units/Rail

MJW18020G

TO−247

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

March, 2010 − Rev. 2

MJW18020/D

MJW18020

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector−Emitter Sustaining Voltage

450

−

Vdc

mAdc

CEO(sus)

(I = 100 mAdc, I = 0)

Collector Cutoff Current

(V = Rated V , I = 0)

100

CEO

Collector Cutoff Current (V = Rated V

, V = 0)

CES EB

−

100

500

CES

(T = 125°C)

Emitter Cutoff Current

−

100

mAdc

EBO

(V = 9 Vdc, I = 0)

ON CHARACTERISTICS

DC Current Gain (I = 3 Adc, V = 5 Vdc)

−

(T = 125°C)

−

(I = 10 Adc V = 2 Vdc)

(T = 125°C)

−

(I = 20 Adc V = 2 Vdc)

5.5

(T = 125°C)

(I = 10 mAdc V = 5 Vdc)

Base−Emitter Saturation Voltage (I = 10 Adc, I = 2 Adc)

−

0.97

1.15

1.25

1.5

Vdc

BE(sat)

(I = 20 Adc, I = 4 Adc)

Collector−Emitter Saturation Voltage

CE(sat)

(I = 10 Adc, I = 2 Adc)

−

0.2

0.3

0.5

0.9

0.6

−

1.5

2.0

(T = 125°C)

(I = 20 Adc, I = 4 Adc)

(T = 125°C)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

−

MHz

(I = 1 Adc, V = 10 Vdc, f = 1 MHz)

test

Output Capacitance

300

500

9000

(V = 10 Vdc, I = 0, f = 1 MHz)

test

Input Capacitance

7000

(V = 8.0)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)

Turn−On Time

(I = 10 Adc, I = I = 2 Adc,

−

540

750

Vcc = 125 V)

Storage Time

Fall Time

−

4.75

380

5.2

500

6.5

1200

3.5

500

Turn−Off Time

Turn−On Time

Storage Time

Fall Time

Off

(I = 20 Adc, I = I = 4 Adc,

965

2.9

Vcc = 125 V)

350

3.25

Turn−Off Time

Off

SWITCHING CHARACTERISTICS: Inductive Load (V = 300 V , Vcc = 15 V, L = 200 mH)

clamp

Fall Time

(I = 10 Adc, I = I = 2 Adc)

−

142

4.75

320

350

3.0

250

Storage Time

Crossover Time

Fall Time

500

3.5

750

(I = 20 Adc, I = I = 4 Adc)

Storage Time

Crossover Time

500

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MJW18020

TYPICAL CHARACTERISTICS

100

T = 25°C

= 25°C

= 125°C

= −20°C

= 125°C

= −20°C

= 2.0 V

= 5.0 V

1.0

0.01

0.1

1.0

100

0.01

0.1

1.0

100

I , COLLECTOR CURRENT (A)

Figure 1. DC Current Gain, V_CE= 2.0 V

Figure 2. DC Current Gain, V_CE= 5.0 V

100.0

I /I = 5.0

I /I = 10

c b

10.0

1.0

10.0

1.0

= −20°C

= 125°C

0.1

0.0

0.1

0.0

= 25°C

0.001

0.01

0.1

1.0

100

0.001

0.01

0.1

1.0

100

I , COLLECTOR CURRENT (A)

Figure 3. Typical Collector−Emitter Saturation

Figure 4. Typical Collector−Emitter Saturation

Voltage, I_C/I_B= 5.0

Voltage, I_C/I_B= 10

10.0

I /I = 5.0

I /I = 10

= −20°C

T = −20°C

= 25°C

1.0

0.1

1.0

0.1

= 125°C

T = 125°C

0.001

0.01

0.1

1.0

100

0.001

0.01

0.1

1.0

100

I , COLLECTOR CURRENT (A)

Figure 5. Typical Base−Emitter Saturation

Figure 6. Typical Base−Emitter Saturation

Voltage, I_C/I_B= 5.0

Voltage, I_C/I_B= 10

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MJW18020

TYPICAL CHARACTERISTICS

100000

10000

100.00

1.0 ms

Extended SOA

10.00

10 ms

5 ms

1 ms

1.00

0.10

0.01

1000

100

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1000

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Capacitance

Figure 8. Forward Bias Safe Operating Area

v 125°C

I /I > 4

= 500 mH

−1.5 V

−5 V

= 0 V

200

400

600

800

1000

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 9. Reverse Bias Safe Operating Area

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MJW18020

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE E

NOTES:

−T−

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

−B−

MILLIMETERS

INCHES

DIM MIN

MAX

21.08

16.26

5.30

MIN

MAX

8.30

20.32

15.75

4.70

1.00

1.90

1.65

0.800

0.620

0.185

0.040

0.075

0.065

0.640

0.209

0.055

0.102

0.084

1.40

2.60

−Q−

0.63 (0.025)

T B

2.13

5.45 BSC

0.215 BSC

1.50

0.40

19.81

5.40

4.32

---

2.49

0.80

20.83

6.20

5.49

4.50

3.65

0.059

0.016

0.780

0.212

0.170

---

0.098

0.031

0.820

0.244

0.216

0.177

0.144

−Y−

3.55

0.140

6.15 BSC

0.242 BSC

2.87

3.12

0.113

0.123

F 2 PL

D3 PL

Y Q

0.25 (0.010)

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MJW18020/D

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