MJW21192 [ONSEMI]

POWER TRANSISTORS COMPLEMENTARY SILICON; 功率晶体管互补硅


型号：	MJW21192
厂家：	ONSEMI
描述：	POWER TRANSISTORS COMPLEMENTARY SILICON 功率晶体管互补硅晶体晶体管
文件：	总8页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Order this document

by MJW21192/D

SEMICONDUCTOR TECHNICAL DATA

Specifically designed for power audio output, or high power drivers in audio

amplifiers.

•

DC Current Gain Specified up to 8.0 Amperes at Temperature

All On Characteristics at Temperature

High SOA: 20 A, 18 V, 100 ms

8.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY

SILICON

TO–247AE Package

MAXIMUM RATINGS

150 VOLTS

100 WATTS

MJW21191

MJW21192

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

150

5.0

Collector Current — Continuous

— Peak

8.0

Base Current

2.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

100

0.65

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.65

Unit

C/W

CASE 340K–01

TO–247AE

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

θJC

θJA

1000

100

PNP

NPN

1.0

100

1000

, REVERSE VOLTAGE (V)

Figure 1. Typical Capacitance @ 25°C

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁷r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 10 mAdc, I = 0)

Vdc

µAdc

CEO(sus)

150

—

Collector Cutoff Current

(V = 250 Vdc, I = 0)

CES

EBO

—

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

ON CHARACTERISTICS (1)

DC Current Gain

—

100

(I = 4.0 Adc, V

= 2.0 Vdc)

5.0

—

(I = 8.0 Adc, V

Collector–Emitter Saturation Voltage

(I = 4.0 Adc, I = 0.4 Adc)

Vdc

CE(sat)

—

1.0

2.0

(I = 8.0 Adc, I = 1.6 Adc)

Base–Emitter On Voltage

(I = 4.0 Adc, V = 2.0 Vdc)

—

2.0

BE(on)

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (2)

4.0

—

MHz

(I = 1.0 Adc, V

= 10 Vdc, f

= 1.0 MHz)

test

300 µs, Duty Cycle

(1) Pulse Test: Pulse Width

2.0%.

(2) f = h • f

test

1.0

DUTY

CYCLE,

D = 0.5

D = t /t

1 2

(pk)

0.2

0.1

= r(t) R

JC(t)

= 1.65

°C/W MAX

0.05

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.02

0.01

READ TIME AT t

– T = P

J(pk)

(pk)

JC(t)

0.01

0.00001

0.0001

0.001

0.01

0.1

1.0

100

1000

t, TIME (s)

Figure 2. Thermal Response

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

The data of Figures 3 and 4 is based on T

= 150 C;

J(pk)

is variable depending on conditions. Second breakdown

down. Safe operating area curves indicate I – V

limits of

pulse limits are valid for duty cycles to 10% provided T

J(pk)

may be calculated from the data in Figure 2.

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

< 150 C. T

J(pk)

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

NPN — MJW21192

PNP — MJW21191

100

10 ms

100 ms

250 ms

1.0

0.1

1.0

0.1

1.0

100

1000

1.0

100

1000

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. PNP — MJW21191

Safe Operating Area

Figure 3. NPN — MJW21192

Safe Operating Area

TYPICAL CHARACTERISTICS

NPN — MJW21192

PNP — MJW21191

1000

100

1000

50°C

100°C

50°C

100°C

100

25°C

1.0

0.01

0.1

1.0

100

0.01

0.1

1.0

100

, COLLECTOR CURRENT (AMPS)

Figure 6. PNP — MJW21191

= 2.0 V DC Current Gain

Figure 5. NPN — MJW21192

= 2.0 V DC Current Gain

Motorola Bipolar Power Transistor Device Data

NPN — MJW21192

PNP — MJW21191

1000

100

1000

100

50°C

100

°C

100°C

25°

25°C

1.0

0.01

0.1

1.0

100

0.01

0.1

1.0

100

, COLLECTOR CURRENT (AMPS)

Figure 8. PNP — MJW21191

Figure 7. NPN — MJW21192

= 5.0 V DC Current Gain

1.0

100°C

25°C

0.1

100°C

25°C

0.01

0.1

1.0

0.1

1.0

, COLLECTOR CURRENT (AMPS)

Figure 9. NPN — MJW21192

I /I = 5.0

Figure 10. PNP — MJW21191

I /I = 5.0

CE(sat) C B

1.0

100°C

1.0

25°C

0.1

100°C

25°C

0.01

0.1

1.0

, COLLECTOR CURRENT (AMPS)

0.1

1.0

I , COLLECTOR CURRENT (AMPS)

Figure 11. NPN — MJW21192

I /I = 10

Figure 12. PNP — MJW21191

I /I = 10

CE(sat) C B

SPACE

Motorola Bipolar Power Transistor Device Data

NPN — MJW21192

PNP — MJW21191

1.0

0.1

1.0

0.1

50°C

25°C

100°C

0.001

0.01

0.1

1.0

0.001

0.01

0.1

1.0

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

Figure 14. PNP — MJW21191

= 2.0 V V Curve

Figure 13. NPN — MJW21192

= 2.0 V V Curve

BE(on)

SPACE

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

–T–

–Q–

0.25 (0.010)

T B

NOTES:

–B–

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

DIM

MIN

19.7

15.3

4.7

1.0

1.27 REF

2.0

5.5 BSC

2.2

0.4

14.2

MAX

20.3

15.9

5.3

MIN

MAX

0.799

0.626

0.209

0.055

0.776

0.602

0.185

0.039

0.050 REF

0.079

1.4

2.4

0.094

–Y–

0.216 BSC

2.6

0.8

14.8

0.087

0.016

0.559

0.102

0.031

0.583

5.5 NOM

0.217 NOM

3.7

3.55

5.0 NOM

5.5 BSC

3.0

4.3

3.65

0.146

0.140

0.197 NOM

0.217 BSC

0.118 0.134

0.169

0.144

3.4

0.25 (0.010)

CASE 340K–03

(TO–247AE)

ISSUE A

Motorola Bipolar Power Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Motorola Bipolar Power Transistor Device Data

Mfax is a trademark of Motorola, Inc.

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447

Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

INTERNET: http://motorola.com/sps

Motorola Bipolar Power Transistor Device Data

MJW21192/D

◊

相关型号：