MJW21193_05_技术文档

MJW21193 (PNP)

MJW21194 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

http://onsemi.com

• Total Harmonic Distortion Characterized

• High DC Current Gain −

16 A

h

= 20 Min @ I = 8 Adc

C

FE

COMPLEMENTARY SILICON

POWER TRANSISTORS

250 V, 200 W

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating

Symbol

Value

250

400

5.0

Unit

Vdc

Adc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage − 1.5 V

V

CEO

V

CBO

V

EBO

TO−247

CASE 340L

STYLE 3

V

400

CEX

1

2

3

Collector Current − Continuous

Collector Current − Peak (Note 1)

I

16

30

C

MARKING DIAGRAM

Base Current − Continuous

I

5.0

Adc

B

Total Power Dissipation @ T = 25°C

Derate Above 25°C

P

200

1.43

Watts

W/°C

C

D

MJW2119x

AYWWG

Operating and Storage Junction

Temperature Range

T , T

−ꢀ 65 to

+150

°C

J

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

1 BASE

3 EMITTER

2 COLLECTOR

Thermal Resistance,

Junction to Case

R

θ

JC

0.7

°C/W

x

A

Y

= 3 or 4

= Assembly Location

= Year

Thermal Resistance,

Junction to Ambient

R

θ

JA

40

°C/W

WW = Work Week

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

G

= Pb−Free Package

ORDERING INFORMATION

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Device

MJW21193

MJW21193G

Package

Shipping

30 Units/Rail

TO−247

(Pb−Free)

MJW21194

TO−247

30 Units/Rail

MJW21194G

TO−247

(Pb−Free)

©

Semiconductor Components Industries, LLC, 2005

1

Publication Order Number:

July, 2005 − Rev. 2

MJW21193/D

MJW21193 (PNP) MJW21194 (NPN)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I = 100 mAdc, I = 0)

V

250

−

Vdc

CEO(sus)

C

B

Collector Cutoff Current

(V = 200 Vdc, I = 0)

I

100

μAdc

CEO

CE

B

Emitter Cutoff Current

(V = 5 Vdc, I = 0)

I

−

EBO

CE

C

Collector Cutoff Current

(V = 250 Vdc, V

I

−

CEX

= 1.5 Vdc)

BE(off)

CE

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V = 50 Vdc, t = 1 s (non−repetitive)

I

Adc

S/b

4.0

2.25

−

CE

(V = 80 Vdc, t = 1 s (non−repetitive)

CE

ON CHARACTERISTICS

DC Current Gain

h

FE

(I = 8 Adc, V = 5 Vdc)

20

8

−

70

−

C

CE

(I = 16 Adc, I = 5 Adc)

C

B

Base−Emitter On Voltage

(I = 8 Adc, V = 5 Vdc)

V

−

2.2

Vdc

BE(on)

C

CE

Collector−Emitter Saturation Voltage

(I = 8 Adc, I = 0.8 Adc)

V

CE(sat)

−

1.4

4

C

B

(I = 16 Adc, I = 3.2 Adc)

C

B

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

T

%

HD

V

= 28.3 V, f = 1 kHz, P

= 100 W

h

FE

RMS

LOAD

RMS

unmatched

−

0.8

−

(Matched pair h = 50 @ 5 A/5 V)

h

FE

matched

−

4

0.08

−

Current Gain Bandwidth Product

f

MHz

pF

T

(I = 1 Adc, V = 10 Vdc, f = 1 MHz)

test

C

CE

Output Capacitance

(V = 10 Vdc, I = 0, f = 1 MHz)

test

C

ob

−

500

CB

E

PNP MJW21193

NPN MJW21194

6.5

8.0

V

= 10 V

CE

6.0

5.5

5.0

4.5

7.0

6.0

5.0

4.0

10 V

5 V

V

= 5 V

CE

3.0

2.0

1.0

4.0

3.5

T = 25°C

test

T = 25°C

J

test

J

f

= 1 MHz

f

= 1 MHz

3.0

0

0.1

1.0

10

0.1

1.0

10

I

C

COLLECTOR CURRENT (AMPS)

I COLLECTOR CURRENT (AMPS)

C

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

http://onsemi.com

2

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193

NPN MJW21194

1000

100

10

1000

100

10

T = 100°C

J

T = 100°C

J

25°C

−ꢁ25°C

V

= 20 V

V

= 20 V

CE

0.1

1.0

10

100

0.1

1.0

I COLLECTOR CURRENT (AMPS)

C

10

100

I

C

COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, V_CE= 20 V

PNP MJW21193

Figure 4. DC Current Gain, V_CE= 20 V

NPN MJW21194

1000

100

10

1000

100

10

T = 100°C

J

T = 100°C

J

25°C

−ꢁ25°C

V

= 5 V

CE

V

= 20 V

CE

0.1

1.0

10

100

0.1

1.0

I COLLECTOR CURRENT (AMPS)

C

10

100

I

C

COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, V_CE= 5 V

Figure 6. DC Current Gain, V_CE= 5 V

NPN MJW21194

PNP MJW21193

30

35

I

B

= 2 A

1.5 A

I

B

= 2 A

1 A

30

25

20

25

20

1.5 A

1 A

15

10

0.5 A

15

10

0.5 A

5.0

0

5.0

T = 25°C

J

T = 25°C

J

0

5.0

10

15

20

25

0

5.0

10

15

20

25

V

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

Figure 7. Typical Output Characteristics

Figure 8. Typical Output Characteristics

http://onsemi.com

3

MJW21193 (PNP) MJW21194 (NPN)

TYPICAL CHARACTERISTICS

PNP MJW21193

NPN MJW21194

3.0

2.5

1.4

1.2

T = 25°C

C B

J

I /I = 10

T = 25°C

C B

J

I /I = 10

1.0

0.8

2.0

1.5

1.0

V

BE(sat)

0.6

0.4

V

BE(sat)

0.5

0

0.2

0

V

CE(sat)

V

CE(sat)

0.1

1.0

10

100

0.1

1.0

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 9. Typical Saturation Voltages

PNP MJW21193

Figure 10. Typical Saturation Voltages

NPN MJW21194

10

1.0

0.1

T = 25°C

J

T = 25°C

J

V

= 20 V (SOLID)

CE

1.0

V

= 5 V (DASHED)

CE

V

= 20 V (SOLID)

CE

V

= 5 V (DASHED)

CE

0.1

1.0

10

100

0.1

1.0

10

100

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Typical Base−Emitter Voltage

PNP MJW21193

Figure 12. Typical Base−Emitter Voltage

NPN MJW21194

100

10

100

10

10 mSec

100 mSec

1 Sec

1.0

0.1

1.0

0.1

1.0

10

100

1000

1.0

10

V , COLLECTOR EMITTER (VOLTS)

CE

100

1000

V

, COLLECTOR EMITTER (VOLTS)

CE

Figure 13. Active Region Safe Operating Area

Figure 14. Active Region Safe Operating Area

http://onsemi.com

4

MJW21193 (PNP) MJW21194 (NPN)

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate I − V

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on T

= 150°C; T is

J(pk) C

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

C

CE

10000

T

= 25°C

C

T

= 25°C

C

ib

C

ib

1000

100

1000

100

C

ob

C

ob

f

= 1 MHz)

(test)

f

= 1 MHz)

(test)

0.1

1.0

10

100

0.1

1.0

10

100

V , REVERSE VOLTAGE (VOLTS)

R

V , REVERSE VOLTAGE (VOLTS)

R

Figure 15. MJW21193 Typical Capacitance

Figure 16. MJW21194 Typical Capacitance

1.2

1.1

1.0

0.9

0.8

0.7

0.6

10

100

1000

FREQUENCY (Hz)

10000

100000

Figure 17. Typical Total Harmonic Distortion

http://onsemi.com

5

MJW21193 (PNP) MJW21194 (NPN)

+50 V

AUDIO PRECISION

MODEL ONE PLUS

TOTAL HARMONIC

DISTORTION

50 Ω

SOURCE

AMPLIFIER

DUT

ANALYZER

0.5 Ω

8.0 Ω

DUT

−50 V

Figure 18. Total Harmonic Distortion Test Circuit

http://onsemi.com

6

MJW21193 (PNP) MJW21194 (NPN)

PACKAGE DIMENSIONS

TO−247

CASE 340L−02

ISSUE D

NOTES:

−T−

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

C

−B−

E

MILLIMETERS

INCHES

U

DIM MIN

MAX

21.08

16.26

5.30

MIN

MAX

8.30

L

A

B

C

D

E

F

20.32

15.75

4.70

1.00

2.20

1.65

0.800

0.620

0.185

0.040

0.087

0.065

N

4

0.640

0.209

0.055

0.102

0.084

A

K

−Q−

1.40

2.60

M

T B

0.63 (0.025)

1

2

3

2.13

G

H

J

5.45 BSC

0.215 BSC

1.50

0.40

20.06

5.40

4.32

−−−

2.49

0.80

20.83

6.20

5.49

4.50

3.65

0.059

0.016

0.790

0.212

0.170

0.098

0.031

0.820

0.244

0.216

P

−Y−

K

L

N

P

Q

U

W

−−− 0.177

0.140 0.144

0.242 BSC

0.113 0.123

3.55

6.15 BSC

2.87

3.12

W

J

F 2 PL

STYLE 3:

PIN 1. BASE

H

G

2. COLLECTOR

3. EMITTER

D3 PL

M

S

Y Q

0.25 (0.010)

http://onsemi.com

7

MJW21193 (PNP) MJW21194 (NPN)

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MJW21193/D

http://onsemi.com

8


型号：	MJW21193_05
厂家：	ONSEMI
描述：	16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 16互补硅功率晶体管250 V ， 200瓦晶体晶体管
文件：	总8页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJW21193_05 [ONSEMI]

相关型号：

MJW21193_10

MJW21194

MJW21194G

MJW21195

MJW21195G

MJW21195_06

MJW21195_10

MJW21196

MJW21196G

MJW25

MJW25

MJW25-12D12