MM74HCT541WMX [ONSEMI]
八路 3 态缓冲器;
| 型号： | MM74HCT541WMX |
| 厂家： | 
ONSEMI |
| 描述： | 八路 3 态缓冲器 驱动 光电二极管 输出元件 逻辑集成电路 |
| 文件： | 总9页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Octal 3-State Buffer,
Inverting/Non-Inverting
SOIC−20 WB
CASE 751D−05
TSSOP−20 WB
CASE 948E
TSSOP−20
CASE 948AQ
MM74HCT540,
MM74HCT541
MARKING DIAGRAMS
General Description
20
1
20
The MM74HCT540 and MM74HCT541 3−STATE buffers utilize
advanced silicon−gate CMOS technology and are general purpose
high speed inverting and non−inverting buffers. They possess high
drive current outputs which enable high speed operation even when
driving large bus capacitances. These circuits achieve speeds
comparable to low power Schottky devices, while retaining the low
power consumption of CMOS. Both devices are TTL input compatible
and have a fanout of 15 LS−TTL equivalent inputs.
MM74HCT devices are intended to interface between TTL and
NMOS components and standard CMOS devices. These parts are also
plug−in replacements for LS−TTL devices and can be used to reduce
power consumption in existing designs.
XXX
XXXXXX
AWLYYWWG
XXX
ALYWG
G
1
XXXXX = Specific Device Code
A
L/WL
YY
= Assembly Location
= Wafer Lot
= Year
YW/WW = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
The MM74HCT540 is an inverting buffer and the MM74HCT541 is
a non−inverting buffer. The 3−STATE control gate operates as a
two−input NOR such that if either G1 or G2 are HIGH, all eight
outputs are in the high−impedance state.
CONNECTION DIAGRAMS
Pin Assignment for SOIC and TSSOP
In order to enhance PC board layout, the MM74HCT540 and
MM74HCT541 offers a pinout having inputs and outputs on opposite
sides of the package. All inputs are protected from damage due to
static discharge by diodes to V and ground.
CC
Features
• TTL Input Compatible
• Typical Propagation Delay: 12 ns
• 3−STATE Outputs for Connection to System Buses
• Low Quiescent Current: 160 ꢀ A
• Output Current: 6 mA (min)
• These are Pb−Free Devices
MM74HCT540 (Top View)
MM74HCT541 (Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 1984
1
Publication Order Number:
December, 2022 − Rev. 2
MM74HCT541/D
MM74HCT540, MM74HCT541
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Value
Unit
V
V
CC
Supply Voltage
−0.5 to +7.0
V
IN
DC Input Voltage
−0.5 to V + 0.5
V
CC
V
DC Output Voltage
Clamp Diode Current
DC Output Current, per Pin
−0.5 to V + 0.5
V
OUT
CC
I , I
IK OK
20
35
mA
mA
mA
°C
I
OUT
I
DC V or GND Current, per Pin
70
CC
CC
T
STG
Storage Temperature Range
−65 to +150
P
Power Dissipation
S. O. Package Only
mW
D
500
260
T
Lead Temperature (Soldering 10 seconds)
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Unless otherwise specified all voltages are referenced to ground.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
4.5
0
Max
Unit
V
V
CC
Supply Voltage
5.5
V
IN
, V
OUT
DC Input or Output Voltage
Operating Temperature Range
Input Rise or Fall Times
V
CC
V
T
A
−55
−
+125
500
°C
ns
t , t
r
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (V = 5 V 10% unless otherwise specified)
CC
T
A
= 25°C
T
A
= −40°C to 85°C
T = −55°C to 125°C
A
Typ
Guaranteed Limits
Symbol
Parameter
Conditions
Unit
V
Minimum HIGH
−
2.0
0.8
2.0
2.0
0.8
V
IH
Level Input Voltage
V
Maximum LOW
Level Input Voltage
−
0.8
V
V
IL
V
OH
Minimum HIGH
Level Output Voltage |I
V
= V or V
IH IL
IN
| = 20 ꢀA
V
CC
V
−0.1
V
−0.1
V
−0.1
OUT
OUT
OUT
CC
CC
CC
4.2
5.2
3.98
4.98
3.84
4.84
3.7
|I
|I
| = 6.0 mA, V = 4.5 V
| = 7.2 mA, V = 5.5 V
CC
CC
4.7
V
OL
Maximum LOW
Level Voltage
V
= V or V
IL
V
IN
IH
|I
|I
|I
| = 20 ꢀA
0
0.2
0.2
0.1
0.26
0.26
0.1
0.33
0.33
0.1
0.4
0.4
OUT
OUT
OUT
| = 6.0 mA, V = 4.5 V
| = 7.2 mA, V = 5.5 V
CC
CC
I
Maximum Input
Current
V
= V or GND
−
0.1
1.0
1.0
ꢀ A
ꢀ A
IN
IN
CC
I
Maximum 3−STATE
Output Leakage
Current
V
OUT
= V or GND
−
0.5
5.0
10
OZ
CC
G = V
IH
V
OUT
= V or GND
−
8.0
1.0
80
160
1.5
ꢀ
A
I
Maximum Quiescent
Supply Current
IN
CC
CC
I
= 0 ꢀA
V
IN
= 2.4 V or 0.5 V (Note 2)
0.6
1.3
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Measured per input. All other inputs at V or GND.
CC
www.onsemi.com
2
MM74HCT540, MM74HCT541
AC ELECTRICAL CHARACTERISTICS
(MM74HCT540: V = 5.0 V, t = t = 6 ns, T = 25°C, unless otherwise specified)
CC
r
f
A
Guaranteed
Limit
Symbol
, t
Parameter
Conditions
C = 45 pF
Typ
12
Unit
ns
t
t
t
Maximum Output Propagation Delay
Maximum Output Enable Time
Maximum Output Disable Time
18
28
25
PHL PLH
L
, t
C = 45 pF, R = 1 k
ꢁ
14
ns
PZL PZH
L
L
, t
C = 5 pF, R = 1 k
ꢁ
13
ns
PLZ PHZ
L
L
AC ELECTRICAL CHARACTERISTICS
(MM74HCT540: V = 5.0 V 10%, t = t = 6 ns, unless otherwise specified)
CC
r
f
T
A
= 25°C
T
A
= −40°C to 85°C
T = −55°C to 125°C
A
Typ
12
22
15
20
15
Guaranteed Limits
Symbol
, t
Parameter
Conditions
C = 50 pF
Unit
20
30
30
40
30
25
38
38
50
38
30
45
45
60
45
t
t
t
Maximum Output
Propagation Delay
ns
PHL PLH
L
C = 150 pF
L
R = 1 kꢁ, C = 50 pF
L L
ns
ns
ns
, t
Maximum Output
Enable Time
PZH PZL
R = 1 kꢁ, C = 150 pF
L
L
, t
Maximum Output
Disable Time
R = 1 kꢁꢂ C = 50 pF
L L
PHZ PLZ
t
, t
Maximum Output
Rise and Fall Time
C = 50 pF
6
5
12
10
20
15
10
20
18
10
20
ns
pF
pF
pF
THL TLH
L
C
Maximum Input
Capacitance
IN
C
Maximum Output
Capacitance
15
OUT
C
Power Dissipation
Capacitance
(Note 3)
(per output)
PD
G = V
12
50
−
−
−
−
−
−
CC
G = GND
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
3. C determines the no load dynamic power consumption, P = C
V
f + I
V
, and the no load dynamic current consumption,
PD
D
PD CC
CC CC
I
= C
V
f + I
.
S
PD CC
CC
www.onsemi.com
3
MM74HCT540, MM74HCT541
AC ELECTRICAL CHARACTERISTICS
(MM74HCT541: V = 5.0 V, t = t = 6 ns, T = 25°C, unless otherwise specified)
CC
r
f
A
Guaranteed
Limit
Symbol
, t
Parameter
Conditions
C = 45 pF
Typ
13
Unit
ns
t
t
t
Maximum Output Propagation Delay
Maximum Output Enable Time
Maximum Output Disable Time
20
28
25
PHL PLH
L
, t
C = 45 pF, R = 1 k
ꢁ
17
ns
PZL PZH
L
L
, t
C = 5 pF, R = 1 k
ꢁ
15
ns
PLZ PHZ
L
L
AC ELECTRICAL CHARACTERISTICS
(MM74HCT541: V = 5.0 V 10%, t = t = 6 ns, unless otherwise specified)
CC
r
f
T
A
= 25°C
T
A
= −40°C to 85°C
T = −55°C to 125°C
A
Typ
14
17
17
22
17
Guaranteed Limits
Symbol
, t
Parameter
Conditions
C = 50 pF
Unit
23
33
30
40
30
29
42
38
50
38
34
49
45
60
45
t
t
t
Maximum Output
Propagation Delay
ns
PHL PLH
L
C = 150 pF
L
R = 1 kꢁ, C = 50 pF
L L
ns
ns
ns
, t
Maximum Output
Enable Time
PZH PZL
R = 1 kꢁ, C = 150 pF
L
L
, t
Maximum Output
Disable Time
R = 1 kꢁꢂ C = 50 pF
L L
PHZ PLZ
t
, t
Maximum Output
Rise and Fall Time
C = 50 pF
6
5
12
10
20
15
10
20
18
10
20
ns
pF
pF
pF
THL TLH
L
C
Maximum Input
Capacitance
IN
C
Maximum Output
Capacitance
15
OUT
C
Power Dissipation
Capacitance
(Note 4)
(per output)
PD
G = V
12
45
−
−
−
−
−
−
CC
G = GND
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
4. C determines the no load dynamic power consumption, P = C
V
f + I
V
, and the no load dynamic current consumption,
PD
D
PD CC
CC CC
I
= C
V
f + I
.
S
PD CC
CC
www.onsemi.com
4
MM74HCT540, MM74HCT541
ORDERING INFORMATION
Device
†
Package
Shipping
MM74HCT540MTCX
MM74HCT541WM
MM74HCT541MTCX
MM74HCT541MTC
MM74HCT541WMX
2500 Units / Tape & Reel
38 Units / Tube
TSSOP−20 (Pb−Free)
SOIC−20 (Pb−Free)
TSSOP−20 (Pb−Free)
TSSOP−20 (Pb−Free)
SOIC−20 (Pb−Free)
2500 Units / Tape & Reel
75 Units / Tube
1000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−20 WB
CASE 751D−05
ISSUE H
DATE 22 APR 2015
SCALE 1:1
D
A
q
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
20
11
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
E
B
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
1
10
MILLIMETERS
DIM MIN
MAX
2.65
0.25
0.49
0.32
12.95
7.60
20X b
A
A1
b
2.35
0.10
0.35
0.23
12.65
7.40
M
S
S
B
T
0.25
A
c
D
E
e
A
1.27 BSC
H
h
10.05
0.25
0.50
0
10.55
0.75
0.90
7
SEATING
PLANE
L
18X e
q
_
_
A1
c
T
GENERIC
MARKING DIAGRAM*
RECOMMENDED
20
SOLDERING FOOTPRINT*
20X
20X
0.52
1.30
XXXXXXXXXXX
XXXXXXXXXXX
AWLYYWWG
20
11
10
1
XXXXX = Specific Device Code
11.00
A
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
1
WL
YY
WW
G
1.27
PITCH
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42343B
SOIC−20 WB
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−20 WB
CASE 948E
ISSUE D
DATE 17 FEB 2016
SCALE 2:1
NOTES:
20X K REF
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
K
K1
M
S
S
0.10 (0.004)
T U
V
S
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
0.15 (0.006) T U
J J1
20
11
2X L/2
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
B
SECTION N−N
L
−U−
PIN 1
IDENT
0.25 (0.010)
N
1
10
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
S
0.15 (0.006) T U
A
−V−
N
MILLIMETERS
INCHES
MIN
DIM MIN
MAX
6.60
4.50
1.20
0.15
0.75
MAX
0.260
0.177
0.047
0.006
0.030
F
A
B
6.40
4.30
---
0.252
0.169
---
DETAIL E
C
D
0.05
0.50
0.002
0.020
F
G
H
0.65 BSC
0.026 BSC
−W−
0.27
0.09
0.09
0.19
0.19
0.37
0.20
0.16
0.30
0.25
0.011
0.004
0.004
0.007
0.007
0.015
0.008
0.006
0.012
0.010
C
J
J1
K
G
D
H
K1
L
DETAIL E
6.40 BSC
0.252 BSC
0
0.100 (0.004)
−T− SEATING
M
0
8
8
_
_
_
_
PLANE
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
XXXX
XXXX
ALYWG
G
1
A
L
= Assembly Location
= Wafer Lot
Y
W
G
= Year
= Work Week
= Pb−Free Package
0.65
PITCH
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
01.36X6
16X
1.26
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70169A
TSSOP−20 WB
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP20, 4.4x6.5
CASE 948AQ−01
ISSUE A
DATE 19 MAR 2009
b
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
1.20
0.15
1.05
0.30
0.20
6.60
6.50
4.50
0.05
0.80
0.19
0.09
6.40
6.30
4.30
E1
E
c
D
6.50
6.40
E
E1
e
4.40
0.65 BSC
0.60
L
0.45
0.75
L1
1.00 REF
0º
8º
θ
e
TOP VIEW
D
c
A2
A
θ1
L
A1
L1
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-153.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34453E
TSSOP20, 4.4X6.5
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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