MMBD301LT1G [ONSEMI]

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes; 硅热载流子二极管肖特基势垒二极管
MMBD301LT1G
型号: MMBD301LT1G
厂家: ONSEMI    ONSEMI
描述:

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes
硅热载流子二极管肖特基势垒二极管

二极管
文件: 总5页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBD301, MMBD301LT1  
Preferred Device  
Silicon Hot−Carrier Diodes  
SCHOTTKY Barrier Diodes  
These devices are designed primarily for high−efficiency UHF and  
VHF detector applications. They are readily adaptable to many other  
fast switching RF and digital applications. They are supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
and industrial/commercial requirements. They are also available in a  
Surface Mount package.  
http://onsemi.com  
30 VOLTS  
SILICON HOT−CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Features  
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)  
Very Low Capacitance − 1.5 pF (Max) @ V = 15 V  
R
MBD301  
Low Reverse Leakage − I = 13 nAdc (Typ) MBD301, MMBD301  
R
MARKING  
DIAGRAM  
Pb−Free Packages are Available  
TO−92  
(TO−226AC)  
CASE 182  
STYLE 1  
MBD  
301  
AYWWG  
MAXIMUM RATINGS  
MBD301 MMBD301LT1  
G
1
2
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
A
Y
= Assembly Location  
= Year  
V
R
30  
V
Total Device Dissipation  
P
WW  
= Work Week  
= Pb−Free Package  
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
G
Derate above 25°C  
(Note: Microdot may be in either location)  
Operating Junction  
Temperature Range  
T
−55 to +125  
°C  
2
1
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
CATHODE  
ANODE  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
MMBD301LT1  
MARKING  
DIAGRAM  
3
SOT−23  
(TO−236)  
CASE 318  
STYLE 8  
4T M G  
G
1
2
1
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
3
1
CATHODE  
ANODE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 4  
MBD301/D  
MBD301, MMBD301LT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
30  
Typ  
Max  
Unit  
V
Reverse Breakdown Voltage (I = 10 mA)  
V
(BR)R  
R
Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1  
C
T
0.9  
13  
1.5  
200  
0.45  
0.6  
pF  
R
Reverse Leakage (V = 25 V) Figure 3  
I
R
nAdc  
Vdc  
Vdc  
R
Forward Voltage (I = 1.0 mAdc) Figure 4  
V
V
0.38  
0.52  
F
F
Forward Voltage (I = 10 mAdc) Figure 4  
F
F
ORDERING INFORMATION  
Device  
Package  
Shipping  
MBD301  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
MBD301G  
TO−92  
(Pb−Free)  
MMBD301LT1  
SOT−23  
3000 / Tape & Reel  
3000 / Tape & Reel  
MMBD301LT1G  
SOT−23  
(Pb−Free)  
MMBD301LT3  
SOT−23  
10,000 / Tape & Reel  
10,000 / Tape & Reel  
MMBD301LT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
MBD301, MMBD301LT1  
TYPICAL ELECTRICAL CHARACTERISTICS  
2.8  
2.4  
500  
f = 1.0 MHz  
400  
2.0  
1.6  
1.2  
0.8  
0.4  
0
KRAKAUER METHOD  
300  
200  
100  
0
0
3.0 6.0 9.0  
12  
15  
18  
21  
24  
27  
30  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , FORWARD CURRENT (mA)  
F
Figure 1. Total Capacitance  
Figure 2. Minority Carrier Lifetime  
10  
100  
10  
T = 100°C  
A
1.0  
T = ꢀ40°C  
T = 85°C  
A
A
75°C  
25°C  
0.1  
1.0  
0.1  
T = 25°C  
A
0.01  
0.001  
0
6.0  
12  
18  
24  
30  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V , REVERSE VOLTAGE (VOLTS)  
R
V , FORWARD VOLTAGE (VOLTS)  
F
Figure 3. Reverse Leakage  
Figure 4. Forward Voltage  
I
F(PEAK)  
CAPACITIVE  
CONDUCTION  
I
R(PEAK)  
FORWARD  
STORAGE  
CONDUCTION  
CONDUCTION  
BALLAST  
NETWORK  
(PADS)  
SAMPLING  
OSCILLOSCOPE  
(50 W INPUT)  
SINUSOIDAL  
GENERATOR  
PADS  
DUT  
Figure 5. Krakauer Method of Measuring Lifetime  
http://onsemi.com  
3
MBD301, MMBD301LT1  
PACKAGE DIMENSIONS  
TO−92 (TO−226AC)  
CASE 182−06  
ISSUE L  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND ZONE R IS  
UNCONTROLLED.  
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
SEATING  
PLANE  
D
INCHES  
DIM MIN MAX  
MILLIMETERS  
L
P
MIN  
4.45  
4.32  
3.18  
0.407  
MAX  
5.21  
5.33  
4.19  
0.533  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.205  
0.210  
0.165  
0.021  
J
K
0.050 BSC  
0.100 BSC  
1.27 BSC  
2.54 BSC  
0.36  
SECTION X−X  
X X  
0.014  
0.016  
−−−  
−−−  
0.41  
−−−  
−−−  
2.66  
1.27  
−−−  
−−−  
D
K
L
0.500  
0.250  
0.080  
−−−  
12.70  
6.35  
2.03  
−−−  
G
N
P
R
V
0.105  
0.050  
−−−  
H
0.115  
0.135  
2.93  
3.43  
−−−  
V
C
STYLE 1:  
PIN 1. ANODE  
2. CATHODE  
1
2
N
N
http://onsemi.com  
4
MBD301, MMBD301LT1  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AN  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
D
SEE VIEW C  
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
H
E
E
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
c
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
1
2
b
0.25  
e
q
A
H
2.10  
2.40  
2.64  
0.083  
0.094  
0.104  
E
L
STYLE 8:  
PIN 1. ANODE  
A1  
L1  
VIEW C  
2. NO CONNECTION  
3. CATHODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
MountingTechniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any  
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over  
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under  
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,  
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PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MBD301/D  

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