MMBF0201NLT1G [ONSEMI]

Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23; 功率MOSFET 300毫安， 20伏N沟道SOT- 23


型号：	MMBF0201NLT1G
厂家：	ONSEMI
描述：	Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 功率MOSFET 300毫安， 20伏N沟道SOT- 23 晶体小信号场效应晶体管开关光电二极管
文件：	总5页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBF0201NLT1

Preferred Device

Power MOSFET

300 mAmps, 20 Volts

N−Channel SOT−23

These miniature surface mount MOSFETs low R

assure

DS(on)

http://onsemi.com

minimal power loss and conserve energy, making these devices ideal

for use in small power management circuitry. Typical applications are

dc−dc converters, power management in portable and

battery−powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

300 mAMPS − 20 VOLTS

R_DS(on)= 1 W

N−Channel

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Package is Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

DSS

Vdc

MARKING DIAGRAM

AND PIN ASSIGNMENT

mAdc

− Continuous @ T = 25°C

300

240

750

− Continuous @ T = 70°C

− Pulsed Drain Current (t ≤ 10 ms)

Drain

Total Power Dissipation @ T = 25°C

225

− 55 to 150

556

°C

Operating and Storage Temperature Range

Thermal Resistance, Junction−to−Ambient

T , T

N1 M G

stg

°C/W

°C

SOT−23

CASE 318

STYLE 21

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

Gate

Source

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBF0201NLT1

SOT−23 3000 Tape & Reel

MMBF0201NLT1G

SOT−23 3000 Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 3

MMBF0201NLT1/D

MMBF0201NLT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

−

Vdc

(BR)DSS

(V = 0 Vdc, I = 10 mA)

Zero Gate Voltage Drain Current

(V = 16 Vdc, V = 0 Vdc)

mAdc

DSS

−

1.0

(V = 16 Vdc, V = 0 Vdc, T = 125°C)

Gate−Body Leakage Current (V

20 Vdc, V = 0)

−

100

nAdc

GSS

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

1.0

1.7

2.4

Vdc

GS(th)

(V = V , I = 250 mAdc)

Static Drain−to−Source On−Resistance

(V = 10 Vdc, I = 300 mAdc)

DS(on)

−

0.75

1.0

1.4

(V = 4.5 Vdc, I = 100 mAdc)

Forward Transconductance (V = 10 Vdc, I = 200 mAdc)

−

450

−

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V = 5.0 V)

iss

−

Output Capacitance

Transfer Capacitance

(V = 5.0 V)

oss

= 5.0 V)

rss

5.0

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

−

2.5

−

d(on)

Rise Time

(V = 15 Vdc, I = 300 mAdc,

R = 50 W)

Turn−Off Delay Time

Fall Time

d(off)

0.8

Gate Charge (See Figure 5)

1400

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

−

0.3

0.75

−

Pulsed Current

Forward Voltage (Note 2)

0.85

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

http://onsemi.com

MMBF0201NLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

0.8

0.6

0.4

0.2

1.0

0.8

0.6

0.4

= 5 V

= 4 V

= 10, 9, 8, 7, 6 V

125°C

−ꢀ55°C

0.2

25°C

= 3 V

0.3

V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.6

0.9

1.2

1.4

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

Figure 2. On−Region Characteristics

1.5

1.2

0.9

0.6

0.3

2.4

2.0

1.5

1.0

0.5

= 4.5 V

= 10 V

0.2

0.4

0.6

0.8

, GATE−TO−SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

Figure 4. On−Resistance versus

Gate−to−Source Voltage

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0.65

0.60

I = 250 mA

= 16 V

I = 300 mA

−25

100

125

150

160

450

2000

3400

Q , TOTAL GATE CHARGE (pC)

TEMPERATURE (°C)

Figure 5. Gate Charge

Figure 6. Threshold Voltage Variance

Over Temperature

http://onsemi.com

MMBF0201NLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.8

1.6

1.4

1.2

1.0

0.8

100

= 10 V @ 300 mA

= 4.5 V @ 100 mA

iss

oss

rss

0.6

−50

−25

100

125

150

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. On−Resistance versus

Junction Temperature

Figure 8. Capacitance

1.0

0.1

125°C

25°C

−ꢀ55°C

0.01

0.001

0.3

0.6

0.9

1.2

1.4

SOURCE−TO−DRAIN FORWARD VOLTAGE (VOLTS)

Figure 9. Source−to−Drain Forward Voltage

versus Continuous Current (I_S)

http://onsemi.com

MMBF0201NLT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

SEE VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

MAX

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

MIN

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.25

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

VIEW C

2.10

2.40

2.64

0.083

0.094

0.104

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MMBF0201NLT1/D

http://onsemi.com

相关型号：