MMBF0202PLT1 [ONSEMI]

Power MOSFET 300 mAmps, 20 Volts; 功率MOSFET 300毫安， 20伏


型号：	MMBF0202PLT1
厂家：	ONSEMI
描述：	Power MOSFET 300 mAmps, 20 Volts 功率MOSFET 300毫安， 20伏
文件：	总8页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBF0202PLT1

Preferred Device

Power MOSFET

300 mAmps, 20 Volts

P–Channel SOT–23

These miniature surface mount MOSFETs low R

assure

DS(on)

minimal power loss and conserve energy, making these devices ideal

for use in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and

battery–powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

http://onsemi.com

300 mAMPS

20 VOLTS

• Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

= 1.4 W

DS(on)

• Miniature SOT–23 Surface Mount Package Saves Board Space

P–Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

Symbol

Value

Unit

Vdc

DSS

± 20

Vdc

mAdc

– Continuous @ T = 25°C

300

240

750

– Continuous @ T = 70°C

– Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

(Note 1.)

225

MARKING

DIAGRAM

Operating and Storage Temperature

Range

T , T

– 55 to

150

°C

stg

Thermal Resistance – Junction–to–Ambient

625

260

°C/W

°C

θJA

SOT–23

CASE 318

STYLE 21

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

= Work Week

PIN ASSIGNMENT

Drain

Gate

Source

ORDERING INFORMATION

Device

Package

Shipping

3000 Tape & Reel

MMBF0202PLT1

SOT–23

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev. 1

MMBF0202PLT1/D

MMBF0202PLT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

–

Vdc

(BR)DSS

= 0 Vdc, I = 10 µA)

Zero Gate Voltage Drain Current

µAdc

DSS

= 16 Vdc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

–

1.0

Gate–Body Leakage Current (V

= ± 20 Vdc, V

= 0)

–

±100

nAdc

GSS

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

1.0

1.7

2.4

Vdc

GS(th)

= V , I = 250 µAdc)

Static Drain–to–Source On–Resistance

Ohms

DS(on)

= 10 Vdc, I = 200 mAdc)

–

0.9

2.0

1.4

3.5

= 4.5 Vdc, I = 50 mAdc)

Forward Transconductance (V

= 10 Vdc, I = 200 mAdc)

–

600

–

mMhos

DYNAMIC CHARACTERISTICS

Input Capacitance

= 5.0 V)

–

iss

Output Capacitance

oss

Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

–

2.5

1.0

–

d(on)

= –15 Vdc,

= 75 Ω, I = 200 mAdc,

Rise Time

Turn–Off Delay Time

Fall Time

d(off)

= –10 V, R = 6.0 Ω)

GEN

8.0

Gate Charge (See Figure 5)

= 16 V, V

= 10 V,

= 200 mA)

2700

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

–

0.3

0.75

–

Pulsed Current

Forward Voltage (Note 2.)

1.5

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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MMBF0202PLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

0.8

0.6

0.4

0.2

1.0

5 V

= -ā55°C

25°C

= 10, 9, 8, 7, 6 V

4 V

0.8

125°C

0.6

0.4

0.2

3 V

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

Figure 2. On–Region Characteristics

200 mA

= 4.5 V

= 10 V

200

50 mA

100

300

400

500

-5

-10

-15

-20

I , DRAIN CURRENT (AMPS)

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus Drain Current

Figure 4. On–Resistance versus

Gate–to–Source Voltage

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

= 200 mA

= 250 µA

2160

= 10 V

= 16 V

590

230

690

2270

3500

-50

-25

100

125

150

Q , TOTAL GATE CHARGE (pC)

TEMPERATURE (°C)

Figure 5. Gate Charge

Figure 6. Threshold Voltage Variance

Over Temperature

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MMBF0202PLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.30

1.25

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

140

120

= 4.5 V @ 50 mA

100

= 10 V @ 200 mA

iss

oss

rss

0.80

-50

-25

100

125

150

T , JUNCTION TEMPERATURE (°C)

V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. On–Resistance versus

Junction Temperature

Figure 8. Capacitance

1.0

= 150°C

-ā55°C

0.1

25°C

0.01

0.001

4.5

SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)

Figure 9. Source–to–Drain Forward Voltage

versus Continuous Current (I )

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MMBF0202PLT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the

one can calculate the power dissipation of the device which

in this case is 225 milliwatts.

drain pad size. This can vary from the minimum pad size

for soldering to a pad size given for maximum power

dissipation. Power dissipation for a surface mount device is

150°C – 25°C

= 225 milliwatts

556°C/W

determined by T

temperature of the die, R

, the maximum rated junction

, the thermal resistance from

J(max)

The 556°C/W for the SOT–23 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 225

milliwatts. There are other alternatives to achieving higher

power dissipation from the SOT–23 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Cladt. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

θJA

the device junction to ambient, and the operating

temperature, T . Using the values provided on the data

sheet for the SOT–23 package, P can be calculated as

follows:

– T

J(max)

θJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature T of 25°C,

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

• The soldering temperature and time should not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied

during cooling

* Soldering a device without preheating can cause

excessive thermal shock and stress which can result in

damage to the device.

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MMBF0202PLT1

PACKAGE DIMENSIONS

SOT–23 (TO–236)

CASE 318–08

ISSUE AF

NOTES:

ąă1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

ąă2. CONTROLLING DIMENSION: INCH.

ąă3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

2.80

1.20

0.89

0.37

1.78

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.0005 0.0040 0.013

0.0034 0.0070 0.085

0.0140 0.0285

0.0350 0.0401

0.0830 0.1039

0.0177 0.0236

0.35

0.89

2.10

0.45

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

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MMBF0202PLT1

Notes

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MMBF0202PLT1

Thermal Clad is a registered trademark of the Bergquist Company.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

CENTRAL/SOUTH AMERICA:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

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then Dial 866–297–9322

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001–800–4422–3781

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JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

For additional information, please contact your local

Sales Representative.

*Available from Germany, France, Italy, UK, Ireland

MMBF0202PLT1/D

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MMBF0202PLT1 [ONSEMI]

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