MMBF4416A [ONSEMI]

N 沟道开关;


型号：	MMBF4416A
厂家：	ONSEMI
描述：	N 沟道开关开关放大器光电二极管晶体管
文件：	总3页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

RF Amplifier, N-Channel

MMBF4416A

SOT−23

CASE 318BM

Features

• This Device is Designed for RF Amplifiers

• Sourced from Process 50

• This is a Pb−Free and Halide Free Device

MARKING DIAGRAM

1: Drain

2: Source

3: Gate

ABSOLUTE MAXIMUM RATINGS

6BGMG

(T = 25°C unless otherwise noted.) (Notes 1, 2)

Symbol

Parameter

Drain−Gate Voltage

Value

Unit

Gate−Source Voltage

−35

6BG = Specific Device Code

Forward Gate Current

= Date Code

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

= Pb−Free Package

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

1. These ratings are based on a maximum junction temperature of 150_C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty−cycle operations.

†

Device

MMBF4416A

Package

Shipping

3000 /

Tape & Reel

SOT−23

(Pb−Free/

Halide Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

August, 2022 − Rev. 2

MMBF4416A/D

MMBF4416A

THERMAL CHARACTERISTICS

(T = 25°C unless otherwise noted.) (Note 3)

Symbol

Parameter

Max

Unit

Total Device Dissipation

225

1.8

Derate above 25_C

mW/_C

Thermal Resistance, Junction−to−Ambient

556

°C/W

3. Device mounted on FR−4 PCB 1.6″ × 1.6″ × 0.06″.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

Gate Reverse Current

= 0, I = 1.0 mA

−35

−

(BR)GSS

= −20 V, V = 0

−100

−6.0

−5.5

GSS

(off)

Gate−Source Cut−off Voltage

Gate−Source Voltage

= 15 V, I = 1.0 nA

−2.5

−1.0

= 15 V, I = 500 mA

ON CHARACTERISTICS

Zero−Gate Voltage Drain Current

Gate−Source Forward Voltage

= 15 V, V = 0

−

DSS

(f)

= 0, I = 1.0 mA

−

SMALL SIGNAL CHARACTERISTICS

Forward Transfer Admittance (Note 4)

Output Admittance (Note 4)

Input Capacitance

= 15 V, V = 0, f = 1.0 kHz

4500

−

7500

mmhos

= 15 V, V = 0, f = 1.0 kHz

−

= 15 V, V = 0, f = 1.0 MHz

4.0

0.8

2.0

4.0

iss

rss

oss

Reverse Transfer Capacitance

Output Capacitance

= 15 V, V = 0, f = 1.0 MHz

Noise Figure

= 15 V, V = 0, I = 5 mA,

R = 1 kW, f = 400 MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%

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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

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ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

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For additional information, please contact your local Sales Representative at

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