MMBF5434 [ONSEMI]
N沟道开关;
| 型号： | MMBF5434 |
| 厂家： | 
ONSEMI |
| 描述： | N沟道开关 开关 |
| 文件： | 总7页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2016
MMBF5434
N-Channel Switch
Features
• This device is designed for digital switching applications where very low on resistance is mandatory.
• Sourced from Process 58.
3
2
SuperSOT-3
Marking: 61Z
1
1. Drain 2. Source 3. Gate
Ordering Information
Part Number
Top Mark
Package
Packing Method
Tape and Reel
MMBF5434
61Z
SSOT 3L
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VDG
Parameter
Value
25
Unit
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
VGS
-25
V
IGF
10
mA
C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2003 Fairchild Semiconductor Corporation
MMBF5434 Rev. 1.1
www.fairchildsemi.com
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
350
2.8
Unit
mW
Total Device Dissipation
Derate Above 25C
mW/C
C/W
RJA
Thermal Resistance, Junction-to-Ambient(3)
556
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
-25
Max.
Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
GS(off) Gate-Source Cut-Off Voltage
ID( o f f )
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(4) VDS = 15 V, IGS = 0
IG = -1 A, VDS = 0
VGS = -15 V, VDS = 0
DS = 5 V, ID = 3nA
VDS = 5.0, VGS = -10 V
V
nA
V
200
-4.0
V
-1.0
V
200
pA
Gate-Source Cutoff Voltage
30
mA
rDS(on) Drain-Source On Resistance
VGS = 0, ID = 10 mA
10
Small Signal Characteristics
pF
pF
Ciss
Crss
Input Capacitance
VDS = 0, VGS = 10 V, f = 1.0 MHz
VDS = 0, VGS = 10 V, f = 1.0 MHz
30
15
Reverse Transfer Capacitance
Note:
4. Pulse test: pulse width 300 s, duty cycle 2%.
© 2003 Fairchild Semiconductor Corporation
MMBF5434 Rev. 1.1
www.fairchildsemi.com
2
Typical Performance Characteristics
100
50
1,000
500
100
IDSS @ VDS = 5.0V, VGS = 0 PULSED
- 2.0 V
V GS = 0 V
rDS @ VDS = 100mV, VGS = 0
80
V GS(off) @ VDS = 5.0V, I = 3.0 nA
D
- 1.0 V
- 3.0 V
60
r DS
10
5
100
50
40
- 4.0 V
T
= 25°
C
A
I DSS
20
0
TYP
V
= - 5.0 V
GS(off)
- 5.0 V
10
_ 0.1
_ 0.5
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
_ 1
_ 5
_ 10
0
0.4
0.8
1.2
1.6
2
VDS - DRAIN-SOURCE VOLTAGE (V)
Figure 1. Common Drain-Source
Figure 2. Parameter Interactions
50
40
30
20
10
0
100
10
T
= 25°C
A
f = 0.1 - 1.0 MHz
TYP
V
= - 0.7 V
GS(off)
C
(V
= 5.0V)
DS
iss
V GS = 0 V
- 0.1 V
- 0.2 V
C
(V
= 0 )
rss
DS
- 0.5 V
- 0.4 V
- 0.3 V
0
1
2
3
4
5
0
-4
-8
-12
-16
-20
VDS - DRAIN-SOURCE VOLTAGE (V)
VGS - GATE-SOURCE VOLTAGE (V)
Figure 4. Common Drain-Source
Figure 3. Common Drain-Source
100
50
V
= 10V
100
50
DG
V
@ 5.0V, 10 μA
GS(off)
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
rDS
20
10
5
rDS
=
VGS
_______
1 -
VGS(off)
10
5
I
= 1.0 mA
D
2
1
I
= 10 mA
D
0
0.2
0.4
0.6
0.8
1
1
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
0.01 0.03 0.1
0.5
1
2
10
100
f - FREQUENCY (kHz)
Figure 5. Normalized Drain Resistance vs.
Bias Voltage
Figure 6. Noise Voltage vs. Frequency
© 2003 Fairchild Semiconductor Corporation
MMBF5434 Rev. 1.1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
50
40
30
20
10
0
10
T
= 25C
A
V
= 1.5V
DD
8
6
4
2
0
V
V
V
=
=
=
- 8.5V
- 5.5V
- 3.5V
GS(off)
GS(off)
GS(off)
V
= - 12V
GS(off)
I
= 30 mA
D
T
= 25°C
A
I
= 10 mA
D
V
= 1.5V
DD
V
= - 12V
GS(off)
0
-2
-4
-6
-8
-10
0
5
10
15
20
25
VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
ID - DRAIN CURRENT (mA)
GSoff)
Figure 7. Switching Turn-On Time vs.
Gate-Source Cut-Off Voltage
Figure 8. Switching Turn-On Time vs. Drain Current
100
50
100
V
= 5.0V
10V
DG
V
= 0
GS
V
= - 3.0V
GS(off)
5.0V
15V
V
GS(off)
╄
125°C
20V
- 4.0V
10V
125°C
5.0V
10
5
10
15V
10V
20V
15V
25°C
- 2.0V
20V
╄
= - 5.0V
= 25
- 55°C
T
°C
A
╄
25
°C
V
GS(off)
- 1.0V
f = 1.0 kHz
1
1
0.1
1
10
1
10
I D - DRAIN CURRENT (mA)
100
I D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs. Drain Current
Figure 10. Output Conductance vs. Drain Current
100
╄
T
T
T
=
- 55°C
T
= 25°C
700
600
A
A
A
A
= 25°C
V
= 10V
DG
°C
=
125
f = 1.0 kHz
500
TO -92
SuperSO T-3
400
300
200
100
0
10
V
=
=
=
- 1.0V
- 3.0V
- 5.0V
GS(off)
GS(off)
GS(off)
V
V
1
0.1
1
10
0
25
50
75
100
125
150
TEM PER A TU R E (oC )
ID - DRAIN CURRENT (mA)
Figure 11. Transconductance vs. Drain Current
Figure 12. Power Dissipation vs.
Ambient Temperature
© 2003 Fairchild Semiconductor Corporation
MMBF5434 Rev. 1.1
www.fairchildsemi.com
4
0.95
2.92±0.12
3
A
1.40
B
1.40±0.12
2.20
1
2
0.508
0.382
(0.29)
1.00
M
0.10
A B
0.95
1.90
LAND PATTERN RECOMMENDATION
1.90
SEE DETAIL A
1.12 MAX
0.10
0.00
(0.94)
M
0.10
C
C
2.51±0.20
GAGE PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO JEDEC REFERENCE AS OF AUGUST 2003
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 2009.
0.178
0.102
0.20
E) DRAWING FILE NAME: MKT-MA03BREV3
0.43
0.33
SEATING
PLANE
(0.56)
SCALE: 50:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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