MMBFJ202 [ONSEMI]
N 沟道通用放大器;
| 型号： | MMBFJ202 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道通用放大器 放大器 PC 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
N-Channel General-Purpose
Amplifier
3
3
1
1
MMBFJ201, MMBFJ202
2
2
SOT−23 (TO−236)
CASE 318−08
SOT−23
CASE 318BM
Description
This device is designed primarily for low level audio
and general−purpose applications with high impedance signal sources.
Sourced from process 52.
2
Source
Applications
3
Gate
These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
1
(Note 1, 2)
Drain
Symbol
Parameter
Drain−Gate Voltage
Value
40
Unit
V
V
V
DG
GS
GF
MARKING DIAGRAM
Gate−Source Voltage
−40
V
I
Forward Gate Current
50
mA
C
62xM
T , T
Operating and Storage Junction
Temperature Range
−55 to 150
J
STG
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low−duty−cycle operations.
62x = Specific Device Code
x
M
= P or Q
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
THERMAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
(Note 3)
Symbol
Parameter
Max
350
2.8
Unit
mW
P
D
Total Device Dissipation
Derate Above 25_C
mW/C
C/W
R
Thermal Resistance,
357
q
JA
Junction−to−Ambient
3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
2
the collector lead minimum 6 cm .
Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
September, 2022 − Rev. 4
MMBFJ202/D
MMBFJ201, MMBFJ202
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V
Gate−Source Breakdown Voltage
Gate Reverse Current
I
= −1.0 mA, V = 0
−40
−
−
V
pA
V
(BR)GSS
G
DS
I
V
V
= −20 V, V = 0
−100
−1.5
−4.0
GSS
GS
DS
DS
V
(off)
Gate−Source Cut−Off Voltage
= 20 V, I = 10 nA
MMBFJ201
MMBFJ202
−0.3
−0.8
GS
D
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current (Note 4)
I
V
V
= 20 V, I = 0
MMBFJ201
MMBFJ202
0.2
0.9
1.0
4.5
mA
DSS
DS
GS
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance
y
= 20 V, f = 1.0 kHz
MMBFJ201
MMBFJ202
500
mmhos
FS
DS
1000
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse test: pulse width 300 ms, duty cycle 2%.
www.onsemi.com
2
MMBFJ201, MMBFJ202
TYPICAL PERFORMANCE CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.5
V
GS
= −100 mV
V
GS
= −100 mV
2.0
1.5
1.0
0.5
0.0
−200 mV
−300 mV
−400 mV
−200 mV
−300 mV
−600 mV
−800 mV
−1.0 V
−1.2 V
−1.4 V
−400 mV
−500 mV
−600 mV
−800 mV
4
0
1
2
3
5
0
1
2
3
4
5
−1.5 V
V
DS
, Drain−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 2. Common Drain−Source (MMBJF202)
Figure 1. Common Drain−Source (MMBJF201)
7
10
V
GS
= 0 V
V
GS
= 0 V
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Ciss
Ciss
Coss
Coss
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
, Drain−Source Voltage (V)
V
DS
, Drain−Source Voltage (V)
Figure 4. Capacitance vs. Voltage (MMBJF202)
Figure 3. Capacitance vs. Voltage (MMBJF201)
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
DS
= 20 V
T = −55C
V
DS
= 20 V
a
+25C
+125C
+25C
+125C
T = −55C
a
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
2
V
GS
, Gate Source Current (V)
V
GS
, Gate Source Current (V)
Figure 6. Transfer Characteristics (MMBFJ202)
Figure 5. Transfer Characteristics (MMBFJ201)
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3
MMBFJ201, MMBFJ202
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
T = −55C
a
3.0
T = −55C
a
+25C
+25C
2.5
2.0
1.5
1.0
0.5
0.0
+125C
+125C
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
0.0
−0.5
V , Gate to Source Current (V)
GS
−1.0
−1.5
−2.0
V
GS
, Gate to Source Current (V)
Figure 8. Transfer Characteristics (MMBFJ202)
Figure 7. Transfer Characteristics (MMBFJ201)
400
10000
T = +25C
a
350
300
250
200
150
100
50
1000
100
10
MMBFJ202
1
MMBFJ201
20
0,1
0,01
0
0
20
40
60
80
100 120 140 160
0
40
60
80
V
DG
(V)
Temperature, T (5C)
a
Figure 9. Leakage Current vs. Voltage
Figure 10. Total PD vs. Temperature
ORDERING INFORMATION
Part Number
†
Top Mark
Package
SOT−23
Shipping
MMBFJ201
62P
3000 / Tape & Reel
(Pb−Free)
MMBFJ202
62Q
SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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