MMBFJ270 [ONSEMI]

P沟道开关;


型号：	MMBFJ270
厂家：	ONSEMI
描述：	P沟道开关开关光电二极管晶体管
文件：	总7页 (文件大小：210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

P-Channel Switch

MMBFJ270

SOT−23 (TO−236)

CASE 318−08

Description

This device is designed for low level analog switching sample and

hold circuits and chopper stabilized amplifiers.

Sourced from process 88.

MARKING DIAGRAMS

Features

• These are Pb−Free Devices

61SMG

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note 1)

Symbol

Parameter

Drain−Gate Voltage

Value

−30

Unit

61S = Specific Device Code

= Date Code

= Pb−Free Package

(Microdot may be in either location)

Gate−Source Voltage

Forward Gate Current

°C

T , T

Operating and Storage Junction

Temperature Range

−55 to 150

STG

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of any

semiconductor device may be impaired. These are steady−state limits. The

factory should be consulted on applications involving pulsed or low duty cycle

operations.

†

Device

Package

Shipping

3000 /

Tape & Reel

MMBFJ270 SOT−23 (TO−236)

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Total Device Dissipation

Derate Above 25_C

Max

225

1.8

Unit

mW/°C

°C/W

Thermal Resistance,

556

Junction to Ambient (Note 2)

2. Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch.

Publication Order Number:

May, 2022 − Rev. 2

MMBFJ270/D

MMBFJ270

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Max

Unit

OFF CHARACTERISTICS (Note 3)

Gate−Source Breakdown Voltage

Gate Reverse Current

= 1.0 mA, V = 0

(BR)GSS

= 20 V, V = 0

200

2.0

GSS

GS(off)

Gate−Source Cut−Off Voltage

= −15 V, I = −1.0 nA

0.5

ON CHARACTERISTICS (Note 3)

Zero−Gate Voltage Drain Current

Forward Transconductance

= −15 V, V = 0

−2.0

−15

15000

200

DSS

gfs

= 0 V, V = 15 V, f = 1.0 kHz

6000

mmhos

goss

Common−Source Output Conductance

= 0 V, V = 15 V, f = 1.0 kHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Short duration test pulse used to minimize self−heating effect.

www.onsemi.com

MMBFJ270

TYPICAL CHARACTERISTICS

−20

−16

−12

−8

100

1,000

500

= 255C

Typ. V

= 4.5 V

GS(off)

0.5 V

I _DSS

V _GS= 0 V

r _DS

g _fs

1.0 V

100

1.5 V

2.0 V

, g @ V = 15 V,

FS DS

= 0 PULSED

@ −100 mV, V = 0

DSS

−4

3.5 V

3.0 V

2.5 V

@ V = −15 V,

GS(off)

= −1.0 mA

−1

−2

−3

−4

−5

, DRAIN−SOURCE VOLTAGE (V)

V , GATE CUTOFF VOLTAGE (V)

GS()FF)

Figure 2. Parameter Interactions

Figure 1. Common Drain−Source

−32

−24

−16

−8

V _DS= − 15 V

_DS= − 15 V

= − 4.5 V

GS(off)

= − 4.5 V

GS(off)

− 555C

255C

1255C

= 2.5 V

GS(off)

= 2.5 V

GS(off)

− 555C

255C

− 555C

255C

1255C

, GATE−SOURCE VOLTAGE (V)

Figure 4. Transfer Characteristics

Figure 3. Transfer Characteristics

100

1000

100

@ 5.0 V, 10 mA

f = 1.0 kHz

GS(off)

−5.0V

r _DS

−10V

r _DS

V_GS

−10V

________

−

−20V

= − 4.5 V

−20V

GS(off)

V _GS(off)

= − 2.5 V

GS(off)

0.2

0.4

0.6

0.8

−0.01

−0.1

−1

−10

NORMALIZED GATE−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (mA)

GS GS(off)

Figure 6. Output Conductance vs. Drain Current

Figure 5. Normalized Drain Resistance vs. Bias

Voltage

www.onsemi.com

MMBFJ270

TYPICAL CHARACTERISTICS (Continued)

100

= 2.5 V

f = 0.1 − 1.0 MHz

GS(off)

255C

= 6.0 V

GS(off)

− 555C

255C

(V = − 15 V)

1255C

0.5

(V = − 15 V)

= −15 V

f = 1.0 kHz

0.1

−0.1

−1

−10

−100

I , DRAIN CURRENT (mA)

, GATE−SOURCE VOLTAGE (V)

Figure 8. Capacitance vs. Voltage

Figure 7. Transconductance vs. Drain Current

100

1000

500

= −100 mV

= 2.5 V

= 4.5 V

= 8.0 V

GS(off)

= 0

= − 0.2 mA

GS(off)

= 5.0 mA

100

= − 15 V

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.2f @ f . 1.0 kHz

0.01

0.1

100

−50

100

150

T , AMBIENT TEMPERATURE (°C)

f, FREQUENCY (kHz)

Figure 10. Channel Resistance vs. Temperature

Figure 9. Noise Voltage vs. Frequency

300

250

200

150

100

125

150

175

T , CASE TEMPERATURE (°C)

Figure 11. Power Derating

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318

ISSUE AT

DATE 01 MAR 2023

SCALE 4:1

GENERIC

MARKING DIAGRAM*

XXXMG

XXX = Specific Device Code

= Date Code

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42226B

SOT−23 (TO−236)

PAGE 1 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318

ISSUE AT

DATE 01 MAR 2023

STYLE 1 THRU 5:

CANCELLED

STYLE 6:

STYLE 7:

PIN 1. EMITTER

2. BASE

STYLE 8:

PIN 1. BASE

PIN 1. ANODE

2. EMITTER

3. COLLECTOR

2. NO CONNECTION

3. CATHODE

3. COLLECTOR

STYLE 9:

PIN 1. ANODE

2. ANODE

STYLE 10:

STYLE 11:

PIN 1. ANODE

2. CATHODE

STYLE 12:

STYLE 13:

PIN 1. SOURCE

2. DRAIN

STYLE 14:

PIN 1. CATHODE

2. GATE

PIN 1. DRAIN

2. SOURCE

3. GATE

PIN 1. CATHODE

2. CATHODE

3. ANODE

3. CATHODE

3. CATHODE−ANODE

3. GATE

3. ANODE

STYLE 15:

STYLE 16:

STYLE 17:

PIN 1. NO CONNECTION

2. ANODE

STYLE 18:

STYLE 19:

STYLE 20:

PIN 1. CATHODE

2. ANODE

PIN 1. GATE

2. CATHODE

3. ANODE

PIN 1. ANODE

2. CATHODE

3. CATHODE

PIN 1. NO CONNECTION PIN 1. CATHODE

2. CATHODE

3. ANODE

2. ANODE

3. CATHODE−ANODE

3. CATHODE

3. GATE

STYLE 21:

STYLE 22:

STYLE 23:

PIN 1. ANODE

2. ANODE

STYLE 24:

STYLE 25:

STYLE 26:

PIN 1. GATE

2. SOURCE

3. DRAIN

PIN 1. RETURN

2. OUTPUT

3. INPUT

PIN 1. GATE

2. DRAIN

PIN 1. ANODE

2. CATHODE

3. GATE

PIN 1. CATHODE

2. ANODE

3. SOURCE

3. NO CONNECTION

3. CATHODE

STYLE 27:

STYLE 28:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

PIN 1. ANODE

2. ANODE

3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASB42226B

SOT−23 (TO−236)

PAGE 2 OF 2

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



MMBFJ270 [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E