MMBFJ271 [ONSEMI]
P沟道开关;
| 型号： | MMBFJ271 |
| 厂家： | 
ONSEMI |
| 描述： | P沟道开关 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2006
MMBFJ271
tm
P-Channel Switch
Features
•
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
G
•
Sourced from process 88.
S
D
SOT-23
Mark : 62T
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Value
-30
Units
V
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
VGS
30
V
IGF
50
mA
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
MIN
MAX
Units
Off Characteristics (Note3)
V(BR)GSS
IGSS
Gate-Source Breakdwon Voltage
Gate Reverse Current
IG = 1.0µA, VDS = 0
30
V
pA
V
VGS = 20V, VDS = 0
200
4.5
VGS(off)
Gate-Source Cutoff Voltage
VDS = -15V, ID = -1.0nA
1.5
On Characteristics (Note3)
IDSS
gfs
Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0
-6.0
-50
18000
500
mA
Forward Transferconductance
VGS = 0V, VDS = 15V, f = 1.0kHz
8000
µmhos
µmhos
goss
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz
tance
Note3 : Short duration test pulse used to minimize self-heating effect.
©2006 Fairchild Semiconductor Corporation
MMBFJ271 Rev. A
1
www.fairchildsemi.com
Package Dimensions
SOT-23
0.40 0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 0.03
0.12
0.96~1.14
2.90 0.10
0.95 0.03 0.95 0.03
1.90 0.03
0.508REF
Dimensions in Millimeters
2
www.fairchildsemi.com
MMBFJ271 Rev. A
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Advance Information
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Definition
Formative or In
Design
This datasheet contains the design specifications for product
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out notice.
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First Production
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data will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
in order to improve design.
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Obsolete
Full Production
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conductor reserves the right to make changes at any time
without notice in order to improve design.
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This datasheet contains specifications on a product that has
been discontinued by Fairchild semiconductor. The datasheet
is printed for reference information only.
Rev. I19
3
www.fairchildsemi.com
MMBFJ271 Rev. A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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