MMBT4126 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | MMBT4126 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete POWER & Signal
Technologies
2N4126
MMBT4126
C
E
TO-92
C
B
B
SOT-23
Mark: ZF
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents to 10 µA as a switch and to 100
mA as an amplifier. Sourced from Process 66. See 2N3906 for
characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
25
25
V
V
4.0
V
Collector Current - Continuous
200
mA
°C
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4126
*MMBT4126
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
Rθ
JC
Rθ
Thermal Resistance, Junction to Ambient
200
357
°C/W
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IC = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
25
25
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
4.0
V
50
50
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
120
60
360
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.4
V
V
VCE(sat)
VBE(sat)
IC = 50 mA, IB = 5.0 mA
0.95
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
250
120
MHz
pF
Input Capacitance
10
4.5
480
4.0
Cibo
Ccb
hfe
Collector-Base Capcitance
Small-Signal Current Gain
Noise Figure
pF
NF
dB
IC = 100 µA, VCE = 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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