MMBT4126LT3G [ONSEMI]
PNP 双极晶体管;
| 型号： | MMBT4126LT3G |
| 厂家： | 
ONSEMI |
| 描述： | PNP 双极晶体管 PC 光电二极管 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
http://onsemi.com
• Moisture Sensitivity Level: 1
• ESD Rating: − Human Body Model: > 4000 V
− Machine Model: > 400 V
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−25
−25
−4
Unit
Vdc
Vdc
Vdc
V
CEO
CBO
V
3
V
EBO
Collector Current−Continuous
THERMAL CHARACTERISTICS
Characteristic
I
−200
mAdc
1
C
2
SOT−23
CASE 318
STYLE 6
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) @T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
556
°C/W
MARKING DIAGRAM
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) @T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
C3 M G
G
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
417
°C/W
Junction and Storage Temperature Range T , T
−55 to +150
°C
J
stg
C3 = Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4126LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 2
MMBT4126LT1/D
MMBT4126LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−25
−25
−4
−
−
C
B
Collector−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
I
nAdc
CEX
(V = −30 Vdc, V = −3.0 Vdc)
−
−50
CE
EB
ON CHARACTERISTICS (Note 3)
DC Current Gain
H
FE
−
(I = −2.0 mAdc, V = −1.0 Vdc)
120
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −50 mAdc, I = −5.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.4
C
B
Base−Emitter Saturation Voltage
(I = −50 mAdc, I = −5.0 mAdc)
V
BE(sat)
−0.95
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
pF
−
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
ibo
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Small−Signal Current Gain
(I = −2.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
h
fe
120
2.5
480
−
C
CE
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Noise Figure
NF
dB
(I = −100 mAdc, V = −5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
−
4.0
C
CE
S
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
500
C
ibo
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
50
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 1. Capacitance
Figure 2. Charge Data
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2
MMBT4126LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
6
I
C
= 50 mA
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 3.
Figure 4.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain
Figure 6. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
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3
MMBT4126LT1G
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
1.0
0.8
0.6
1.0
T = 25°C
J
V
@ I /I = 10
BE(sat) C B
0.5
0
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
-ꢀ0.5
-ꢀ1.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.4
0.2
0
V
@ I /I = 10
C B
CE(sat)
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “ON” Voltages
Figure 12. Temperature Coefficients
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4
MMBT4126LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MMBT4126LT1/D
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