MMBT5088 [ONSEMI]
NPN 通用放大器;
| 型号： | MMBT5088 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 通用放大器 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2N5088
2N5089
MMBT5088
MMBT5089
C
E
TO-92
C
B
B
SOT-23
Mark: 1Q / 1R
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings*
TA= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
30
25
35
30
4.5
V
V
V
V
V
2N5088
2N5089
2N5088
2N5089
VCBO
VEBO
IC
Emitter-Base Voltage
Collector Current - Continuous
100
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD
Total Device Dissipation
Derate above 25 C
625
5.0
350
2.8
mW
mW/ C
°
°
Thermal Resistance, Junction to Case
83.3
Rθ
C/W
°
JC
Thermal Resistance, Junction to Ambient
200
357
Rθ
C/W
°
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 2001 Semiconductor Components Industries, LLC.
Publication Order Number:
October-2017, Rev. 1
MMBT5089/D
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
30
25
35
30
V
V
V
V
I
C = 1.0 mA, IB = 0
5088
5089
5088
5089
5088
5089
IC = 100 µA, IE = 0
Collector Cutoff Current
Emitter Cutoff Current
50
50
50
nA
nA
nA
nA
V
V
CB = 20 V, IE = 0
CB = 15 V, IE = 0
IEBO
VEB = 3.0 V, IC = 0
EB = 4.5 V, IC = 0
V
100
ON CHARACTERISTICS
hFE
DC Current Gain
300
400
350
450
300
400
900
1200
IC = 100 µA, VCE = 5.0 V 5088
5089
I
C = 1.0 mA, VCE = 5.0 V 5088
5089
IC = 10 mA, VCE = 5.0 V* 5088
5089
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, IB = 1.0 mA
0.5
0.8
V
V
VCE(sat)
VBE(on)
IC = 10 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
50
MHz
IC = 500 µA,VCE = 5.0 mA,
f = 20 MHz
3
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
VCB = 5.0 V, IE = 0, f = 100 kHz
4.0
10
pF
pF
Ccb
Ceb
hfe
VBE = 0.5 V, IC = 0, f = 100 kHz
350
450
1400
1800
3.0
2.0
I
C = 1.0 mA, VCE = 5.0 V, 5088
f = 1.0 kHz 5089
C = 100 µA, VCE = 5.0 V, 5088
NF
Noise Figure
dB
dB
I
RS = 10 kΩ,
5089
f = 10 Hz to 15.7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
www.onsemi.com
2
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
1200
0.3
0.25
0.2
VCE = 5.0 V
125 °C
1000
800
600
400
200
0
β = 10
125 °C
0.15
0.1
25 °C
25 °C
- 40 °C
- 40 °C
0.05
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
β = 10
VCE = 5.0 V
0.1
1
10
100
0.1
1
10
40
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
50
75
100
125
150
TA - AMBIE NT TEMP ERATURE ( C)
°
www.onsemi.com
3
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Input and Output Capacitance
vs Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (fT )
5
10
7
f = 1.0 MHz
175 MHz
4
3
5
C
te
150 MHz
3
2
2
125 MHz
100 MHz
75 MHz
C
1
0
ob
1
0.1
1
10
100
0
4
8
12
16
20
I C - COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (V)
Normalized Collector-Cutoff Current
vs Ambient Temperature
Wideband Noise Frequency
vs Source Resistance
1000
5
VCE = 5.0 V
BANDWIDTH = 15.7 kHz
4
3
2
1
0
100
10
1
I
= 100 µA
C
I
= 30 µA
C
I
= 10 µA
C
25
50
75
100
125
150
1,000
2,000
5,000
10,000
20,000
50,000
100,000
TA - AMBIENT TEMPERATURE ( C)
°
R
- SOURCE RESISTANCE (Ω )
S
Power Dissipation vs
Ambient Temperature
Noise Figure vs Frequency
10
8
625
500
375
250
125
I
R
= 200 µA,
= 10 kΩ
C
S
TO-92
I
= 100 µA,
C
R
= 10 kΩ
S
6
SOT-23
I
= 1.0 mA,
C
R
= 500 Ω
S
4
I
= 1.0 mA,
C
R
= 5.0 kΩ
S
2
V
= 5.0V
CE
0
0
0
25
50
75
100
125
150
0.0001 0.001
0.01
0.1
1
10
100
TEMPERATURE (oC)
f - FREQUENCY (MHz)
www.onsemi.com
4
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
10,000
10,000
3.0 d
B
5,000
5,000
4.0 d
B
2.0 d
B
2,000
1,000
500
2,000
1,000
500
3.0 d
B
6.0 d
B
4.0 d
B
8.0 d
B
V CE = 5.0 V
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
6.0 dB
8.0 d
10 d
B
f = 100 Hz
BANDWIDTH
= 20 Hz
B
200
100
200
100
12 d
B
14 d
B
1
10
100
1,000
1
10
100
1,000
I
- COLLECTOR CURRENT ( A)
µ
I
- COLLECTOR CURRENT ( µ A)
C
C
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
10000
5000
10000
5000
1.0 d
B
2.0 d
B
2000
1000
500
2.0 d
B
2000
1000
500
3.0 d
B
3.0 d
B
4.0 d
B
VCE
5.0V
f = 1.0 MHz
BANDWIDTH
= 200kHz
=
4.
0 dB
5.0
dB
6.0
VCE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
6.0 d
B
200
100
200
100
dB
7.0 d
8.0 d
B
B
8.0 d
B
1
10
100
1000
0.01
0.1
1
10
µ
I C - COLLECTOR CURRENT ( A)
µ
I C - COLLECTOR CURRENT ( A)
www.onsemi.com
5
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0 kHz)
Typical Common Emitter Characteristics
1.4
Typical Common Emitter Characteristics
1.5
h
h
fe
ie
1.4
h ie
VCE = 5.0V
f = 1.0kHz
I C = 1.0mA
1.3
1.2
1.1
1
h re
h fe
h oe
1.3
1.2
1.1
1
h
oe
h
h
re
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h oe
h fe
h re
IC = 1.0mA
f = 1.0kHz
TA = 25 C
0.9
0.8
h ie
h
fe
°
-100
-50
0
50
100
150
0
5
10
15
20
25
T J - JUNCTIO N TEMP ERATURE ( C)
V CE - COLLECTOR VOLTAGE (V)
°
Typical Common Emitter Characteristics
100
f = 1.0kHz
h
oe
10
1
h
and h
re
ie
h
re
h
oe
h
fe
h
fe
h
ie
0.1
0.01
0.1 0.2
0.5
1
2
5
10 20
50 100
I C - COLLECTOR CURRENT (mA)
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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www.onsemi.com
❖
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