MMBT5089LT1G [ONSEMI]
Low Noise Transistors NPN Silicon; 低噪声晶体管NPN硅
| 型号： | MMBT5089LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Low Noise Transistors NPN Silicon |
| 文件： | 总5页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5088LT1G,
MMBT5089LT1G
Low Noise Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collector−Emitter Voltage
V
CEO
Vdc
MMBT5088
MMBT5089
30
25
Collector−Base Voltage
Emitter−Base Voltage
V
Vdc
CBO
3
SOT−23 (TO−236)
MMBT5088
MMBT5089
35
30
CASE 318
STYLE 6
1
V
4.5
50
Vdc
2
EBO
Collector Current − Continuous
I
C
mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1x M G
Total Device Dissipation FR−5 Board,
P
D
G
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
1x = Device Code
x = Q for MMBT5088LT1
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
x = R for MMBT5089LT1
= Date Code*
Derate above 25°C
M
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to +150
stg
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
†
Device
Package
Shipping
MMBT5088LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT5089LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 3
MMBT5088LT1/D
MMBT5088LT1G, MMBT5089LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
MMBT5088
MMBT5089
30
25
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
Vdc
nAdc
nAdc
(BR)CBO
MMBT5088
MMBT5089
35
30
−
−
C
E
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
MMBT5088
MMBT5089
−
−
50
50
CB
E
(V = 15 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
EBO
(V
EB(off)
(V
EB(off)
= 3.0 Vdc, I = 0)
MMBT5088
MMBT5089
−
−
50
100
C
= 4.5 Vdc, I = 0)
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
300
400
900
1200
C
CE
(I = 1.0 mAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
350
450
−
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
MMBT5088
MMBT5089
300
400
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.5
0.8
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
pF
−
T
(I = 500 mAdc, V = 5.0 Vdc, f = 20 MHz)
50
−
−
C
CE
Collector−Base Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz emitter guarded)
C
C
h
cb
eb
fe
4.0
10
CB
E
Emitter−Base Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz collector guarded)
−
EB
C
Small Signal Current Gain
(I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz)
MMBT5088
MMBT5089
350
450
1400
1800
C
CE
Noise Figure
NF
dB
(I = 100 mAdc, V = 5.0 Vdc, R = 10 kW, f = 1.0 kHz)
MMBT5088
MMBT5089
−
−
3.0
2.0
C
CE
S
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
MMBT5088LT1G, MMBT5089LT1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
I
C
= 10 mA
R ≈ 0
S
R ≈ 0
S
f = 10 Hz
10 kHz
3.0 mA
1.0 mA
10
7.0
5.0
10
7.0
5.0
100 Hz
1.0 kHz
300 mA
100 kHz
5.0
3.0
3.0
0.01 0.02
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
0.05 0.1
0.2
0.5 1.0
2.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
16
BANDWIDTH = 1.0 Hz
7.0
5.0
I
C
= 10 mA
3.0
2.0
BANDWIDTH = 10 Hz to 15.7 kHz
3.0 mA
1.0 mA
12
8.0
4.0
0
1.0
0.7
0.5
I
C
= 1.0 mA
500 mA
100 mA
10 mA
300 mA
100 mA
30 mA
0.3
0.2
10 mA
R ≈ 0
S
0.1
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk
5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I = 10 mA
C
3.0 mA
16
12
I
C
= 10 mA
100 mA
3.0 mA
1.0 mA
100
70
1.0 mA
50
30
20
300 mA
300 mA
8.0
30 mA
100 mA
30 mA
10
10 mA
4.0
0
7.0
5.0
10 mA
BANDWIDTH = 1.0 Hz
3.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
R , SOURCE RESISTANCE (OHMS)
S
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
http://onsemi.com
3
MMBT5088LT1G, MMBT5089LT1G
4.0
3.0
V
CE
= 5.0 V
2.0
T = 125°C
A
25°C
1.0
0.7
-ꢁ55°C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
-ꢁ0.4
-ꢁ0.8
T = 25°C
J
0.8
0.6
0.4
0.2
0
V
BE
@ V = 5.0 V
CE
-ꢁ1.2
-ꢁ1.6
-ꢁ2.0
-ꢁ2.4
T = 25°C to 125°C
J
-ꢁ55°C to 25°C
V
@ I /I = 10
C B
CE(sat)
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.5
10 20
50 100
0.5
10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 9. Temperature Coefficients
8.0
6.0
500
T = 25°C
J
300
200
C
ob
C
ib
4.0
3.0
C
eb
C
cb
2.0
100
V
= 5.0 V
CE
70
50
T = 25°C
J
1.0
0.8
0.1
0.2
1.0
2.0
5.0
1.0
2.0 3.0
5.0 7.0
0.5
10
20
50
100
10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 12. Capacitance
Figure 10. Current−Gain — Bandwidth Product
http://onsemi.com
4
MMBT5088LT1G, MMBT5089LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT5088LT1/D
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