MMBTA13LT1_06 [ONSEMI]

Darlington Amplifier Transistors; 达林顿晶体管放大器


型号：	MMBTA13LT1_06
厂家：	ONSEMI
描述：	Darlington Amplifier Transistors 达林顿晶体管放大器晶体放大器晶体管达林顿晶体管
文件：	总6页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBTA13LT1,

MMBTA14LT1

MMBTA14LT1 is a Preferred Device

Darlington Amplifier

Transistors

NPN Silicon

http://onsemi.com

Features

COLLECTOR 3

• Pb−Free Packages are Available

BASE

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

EMITTER 2

CES

CBO

EBO

Vdc

SOT−23 (TO−236)

Collector Current − Continuous

300

mAdc

CASE 318

STYLE 6

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

MARKING DIAGRAM

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

1x M G

Substrate, (Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to +150

1x = Device Code

x = M for MMBTA13LT1

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

x = N for MMBTA14LT1

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBTA13LT1

SOT−23

3,000 / Tape & Reel

MMBTA13LT1G SOT−23

(Pb−Free)

MMBTA14LT1

SOT−23

3,000 / Tape & Reel

MMBTA14LT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 2

MMBTA13LT1/D

MMBTA13LT1, MMBTA14LT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

Vdc

nAdc

(BR)CES

(I = 100 mAdc, V = 0)

−

Collector Cutoff Current

(V = 30 Vdc, I = 0)

CBO

100

Emitter Cutoff Current

(V = 10 Vdc, I = 0)

EBO

−

ON CHARACTERISTICS (Note 3)

DC Current Gain

−

(I = 10 mAdc, V = 5.0 Vdc)

MMBTA13

MMBTA14

5000

10,000

−

(I = 100 mAdc, V = 5.0 Vdc)

MMBTA13

MMBTA14

10,000

20,000

−

Collector−Emitter Saturation Voltage

(I = 100 mAdc, I = 0.1 mAdc)

Vdc

CE(sat)

−

1.5

2.0

Base−Emitter On Voltage

(I = 100 mAdc, V = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

MHz

(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)

125

−

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. f = |h | • f

test

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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MMBTA13LT1, MMBTA14LT1

NOISE CHARACTERISTICS

(V_CE= 5.0 Vdc, T_A= 25°C)

500

2.0

BANDWIDTH = 1.0 Hz

R ≈ 0

BANDWIDTH = 1.0 Hz

1.0

0.7

0.5

200

100

= 1.0 mA

0.3

0.2

10 mA

100 mA

10 mA

0.1

0.07

0.05

= 1.0 mA

0.03

0.02

5.0

10 20

50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk

f, FREQUENCY (Hz)

10 20

50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk

f, FREQUENCY (Hz)

Figure 2. Noise Voltage

Figure 3. Noise Current

200

BANDWIDTH = 10 Hz TO 15.7 kHz

= 10 mA

100

8.0

6.0

4.0

2.0

10 mA

100 mA

= 1.0 mA

1.0 mA

1.0 2.0

5.0

50 100 200

500 1000

1.0 2.0

5.0

50 100 200

500 1000

R , SOURCE RESISTANCE (kW)

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

http://onsemi.com

MMBTA13LT1, MMBTA14LT1

SMALL−SIGNAL CHARACTERISTICS

4.0

= 5.0 V

f = 100 MHz

T = 25°C

2.0

7.0

5.0

ibo

1.0

0.8

obo

0.6

0.4

3.0

2.0

0.2

0.04

0.1 0.2

0.4

1.0 2.0 4.0

10 20

0.5 1.0 2.0

0.5 10 20

100 200

500

V , REVERSE VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (mA)

Figure 6. Capacitance

Figure 7. High Frequency Current Gain

200ꢀk

3.0

2.5

2.0

1.5

1.0

0.5

T = 125°C

T = 25°C

100ꢀk

70ꢀk

50ꢀk

50 mA

250 mA 500 mA

10 mA

25°C

30ꢀk

20ꢀk

10ꢀk

7.0ꢀk

5.0ꢀk

−ꢁ55°C

= 5.0 V

3.0ꢀk

2.0ꢀk

500

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

5.0 7.0 10

20 30

50 70 100

200 300

I , COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

1.6

1.4

−ꢁ1.0

−ꢁ2.0

−ꢁ3.0

−ꢁ4.0

−ꢁ5.0

−ꢁ6.0

*APPLIES FOR I /I ≤ h /3.0

C B

25°C TO 125°C

T = 25°C

FOR V

CE(sat)

@ I /I = 1000

−ꢁ55°C TO 25°C

25°C TO 125°C

BE(sat)

C B

1.2

1.0

0.8

0.6

@ V = 5.0 V

BE(on)

FOR V

−ꢁ55°C TO 25°C

@ I /I = 1000

C B

CE(sat)

5.0 7.0

20 30

50 70 100 200 300

500

5.0 7.0 10

20 30

50 70 100

200 300 500

I , COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

http://onsemi.com

MMBTA13LT1, MMBTA14LT1

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

SINGLE PULSE

0.05

0.1

0.07

SINGLE PULSE

0.05

0.03

0.02

= r(t) • R ꢂT

− T = P

JC(t)

J(pk)

(pk) JC(t)

= r(t) • R ꢂT

− T = P

JA(t)

J(pk)

(pk) JA(t)

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0ꢀk

2.0ꢀk

5.0ꢀk 10ꢀk

t, TIME (ms)

Figure 12. Thermal Response

1.0ꢀk

700

1.0 ms

500

= 25°C

300

200

100 ms

= 25°C

1.0 s

100

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.4 0.6

1.0

2.0 4.0 6.0 10

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

FIGURE A

1/f

DUTYꢀCYCLE + t ꢀf +

PEAK PULSE POWER = P

Design Note: Use of Transient Thermal Resistance Data

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MMBTA13LT1, MMBTA14LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEE VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

MAX

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

MIN

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.25

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

VIEW C

2.10

2.40

2.64

0.083

0.094

0.104

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

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USA/Canada

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Order Literature: http://www.onsemi.com/litorder

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Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MMBTA13LT1/D

http://onsemi.com

MMBTA13LT1_06 [ONSEMI]

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