MMBTA56WT1G [ONSEMI]

Driver Transistor PNP Silicon; 驱动晶体管PNP硅


型号：	MMBTA56WT1G
厂家：	ONSEMI
描述：	Driver Transistor PNP Silicon 驱动晶体管PNP硅晶体晶体管驱动
文件：	总5页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBTA56WT1

Driver Transistor

PNP Silicon

Features

• Moisture Sensitivity Level: 1

• ESD Rating: Human Body Model − 4 kV

Machine Model − 400 V

• Pb−Free Package is Available

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COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−80

Unit

Vdc

CEO

CBO

EMITTER

−80

Vdc

EBO

−4.0

−500

Vdc

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

150

T = 25°C

SC−70 (SOT−323)

CASE 419

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

833

°C/W

°C

STYLE 3

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximumratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may

be affected.

MARKING DIAGRAM

FM M G

FM = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBTA56WT1

MMBTA56WT1G

SC−70

3000/Tape & Reel

SC−70

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 1

MMBTA56WT1/D

MMBTA56WT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector−Emitter Breakdown Voltage (Note 1)

−80

−4.0

−

Vdc

(BR)CEO

(I = −1.0 mAdc, I = 0)

Emitter−Base Breakdown Voltage

(BR)EBO

(I = −100 mAdc, I = 0)

Collector Cutoff Current

−0.1

mAdc

CES

(V = −60 Vdc, I = 0)

Collector Cutoff Current

CBO

(V = −60 Vdc, I = 0)

−

−0.1

(V = −80 Vdc, I = 0)

ON CHARACTERISTICS

DC Current Gain

−

(I = −10 mAdc, V = −1.0 Vdc)

100

−

(I = −100 mAdc, V = −1.0 Vdc)

Collector−Emitter Saturation Voltage

−

−0.25

Vdc

CE(sat)

(I = −100 mAdc, I = −10 mAdc)

Base−Emitter On Voltage

BE(on)

−

−1.2

(I = −100 mAdc, V = −1.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

−

MHz

(I = −100 mAdc, V = −1.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. f is defined as the frequency at which |h | extrapolates to unity.

TURN−ON TIME

TURN−OFF TIME

−1.0 V

+40 V

5.0 ms

100

OUTPUT

+10 V

t = 3.0 ns

* C t 6.0 pF

5.0 mF

100

5.0 ms

t = 3.0 ns

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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MMBTA56WT1

200

100

T = 25°C

= −2.0 V

T = 25°C

ibo

100

obo

7.0

5.0

−0.1 −0.2

−2.0 −3.0 −5.0 −7.0 −10

−20 −30 −50 −70 −100

−200

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100

I , COLLECTOR CURRENT (mA)

V , REVERSE VOLTAGE (VOLTS)

Figure 2. Current−Gain — Bandwidth Product

Figure 3. Capacitance

1.0 k

700

−1.0 k

100 ms

1.0 ms

−700

−500

500

300

200

−300

−200

1.0 s

= 25°C

T = 25°C

100

−100

−70

−50

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

= −40 V

−30

−20

I /I = 10

= I

B1 B2

t @ V

= −0.5 V

BE(off)

T = 25°C

−10

−5.0 −7.0 −10

−20 −30

−50 −70 −100

−200 −300 −500

−1.0

−2.0 −3.0 −5.0 −7.0 −10

−20 −30 −50 −70 −100

I , COLLECTOR CURRENT (mA)

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 4. Switching Time

Figure 5. Active−Region Safe Operating Area

400

−1.0

−0.8

−0.6

−0.4

T = 25°C

T = 125°C

= −1.0 V

@ I /I = 10

C B

BE(sat)

200

25°C

BE(on)

@ V = −1.0 V

−55°C

100

−0.2

@ I /I = 10

C B

CE(sat)

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100 −200

−500

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100 −200 −500

I , COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

Figure 7. “ON” Voltages

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MMBTA56WT1

−0.8

−1.0

−0.8

−0.6

−0.4

T = 25°C

−1.2

−1.6

−2.0

−250 mA

−100 mA

−50 mA

−500 mA

for V

−10 mA

−2.4

−2.8

−0.2

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100 −200 −500

−0.05 −0.1 −0.2

−0.5 −1.0 −2.0 −5.0 −10 −20

−50

I , COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 9. Base−Emitter Temperature

Coefficient

Figure 8. Collector Saturation Region

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MMBTA56WT1

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

MILLIMETERS

INCHES

DIM

MIN

0.80

0.00

NOM

0.90

0.05

0.7 REF

0.35

0.18

2.10

1.24

1.30

MAX

1.00

0.10

MIN

0.032

0.000

NOM

0.035

0.002

0.028 REF

0.014

0.007

0.083

0.049

0.051

MAX

0.040

0.004

0.30

0.10

1.80

1.15

1.20

0.40

0.25

2.20

1.35

1.40

0.012

0.004

0.071

0.045

0.047

0.016

0.010

0.087

0.053

0.055

0.65 BSC

0.425 REF

2.10

0.026 BSC

0.017 REF

0.083

2.00

2.40

0.079

0.095

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.05 (0.002)

SOLDERING FOOTPRINT*

0.65

0.025

0.65

0.025

1.9

0.075

0.9

0.035

0.7

0.028

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

MountingTechniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,

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personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

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PUBLICATION ORDERING INFORMATION

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MMBTA56WT1/D

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