MMBTA63 [ONSEMI]
PNP达林顿晶体管;
| 型号： | MMBTA63 |
| 厂家： | 
ONSEMI |
| 描述： | PNP达林顿晶体管 晶体管 达林顿晶体管 |
| 文件： | 总6页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2010
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
MMBTA63
PZTA63
MPSA63
C
C
E
E
C
B
TO-92
SOT-23
Mark:2U
SOT-223
B
EBC
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
VCES
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
Units
-30
-30
V
V
Collector-Base Voltage
Emitter-Base Voltage
-10
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-1.2
A
TJ, Tstg
- 55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Max.
Symbol
Parameter
Units
MPSA63
*MMBTA63
**PZTA63
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
PD
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
357
125
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MPSA63 / MMBTA63 / PZTA63 Rev. A1
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV(BR)CES
ICBO
Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0
-30
V
Collector-Cutoff Current
Emitter-Cutoff Current
VCB = -30V, IE = 0
VEB = -10V, IC = 0
-100
-100
nA
nA
IEBO
On Characteristics *
hFE
DC Current Gain
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
5,000
10,000
VCE(sat)
VBE(on)
Small Signal Characteristics
Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA
-1.5
-2.0
V
V
Base-Emitter On Voltage
IC = -100mA, VCE = -5.0V
fT
Current Gain - Bandwidth Product
IC = -10mA, VCE = -5.0V,
f = 100MHz
125
MHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Typical Performance Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
50
1.6
1.2
0.8
0.4
0
β
= 1000
VCE = 5V
40
- 40 °C
125 °C
30
20
10
0
25 °C
25 °C
125 °C
- 40 °C
0.01
0.1
IC - COLLECTOR CURRENT (A)
1
0.001
0.01
0.1
1
F
E
IC - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
© 2010 Fairchild Semiconductor Corporation
MPSA63 / MMBTA63 / PZTA63 Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics (continued)
Base Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
2
1.6
1.2
0.8
0.4
0
2
β
= 1000
- 40 °C
- 40 °C
1.6
1.2
0.8
0.4
0
25 °C
25 °C
125 °C
125 °C
V
= 5V
CE
T
A
S
BE
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I C- COLLECTOR CURRENT (A)
I C- COLLECTOR CURRENT (A)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
16
f = 1.0 MHz
VCB= 15V
12
8
1
C
ib
0.1
4
C
ob
C
B
O
0.01
0
25
50
75
100
125
0.1
1
10
100
TA- AMBIENT TEMPERATURE ( C)
REVERSE VOLTAGE (V)
°
Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-223
TO-92
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
Figure 7. Power Dissipation
vs Ambient Temperature
© 2010 Fairchild Semiconductor Corporation
MPSA63 / MMBTA63 / PZTA63 Rev. A1
www.fairchildsemi.com
3
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Rev. I49
© Fairchild Semiconductor Corporation
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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