MMBTH10L [ONSEMI]
VHF/UHF Transistor; 甚高频/超高频晶体管
| 型号： | MMBTH10L |
| 厂家： | 
ONSEMI |
| 描述： | VHF/UHF Transistor |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
http://onsemi.com
Device Marking:
Features
COLLECTOR
3
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
25
Unit
Vdc
Vdc
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
30
3.0
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1
Total Device Dissipation
FR−5 Board (Note 1)
P
D
2
T
= 25°C
225
1.8
mW
mW/°C
A
CASE 318
SOT−23
Derate above 25°C
STYLE 6
Thermal Resistance,
Junction to Ambient (Note 1)
R
556
°C/W
θJA
Total Device Dissipation
Alumina Substrate (Note 2)
P
D
T
= 25°C
300
2.4
mW
mW/°C
ORDERING INFORMATION
A
Derate above 25°C
†
Device
Package
Shipping
Thermal Resistance,
Junction to Ambient (Note 2)
R
417
°C/W
°C
θJA
MMBTH10LT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
MMBTH10LT1G
SOT−23
(Pb−Free)
Junction and Storage
Temperature Range
T , T
J stg
−55 to
+150
MMBTH10−4LT1
SOT−23
3000/Tape & Reel
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
December, 2003 − Rev. 2
MMBTH10LT1/D
MMBTH10LT1, MMBTH10−4LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
25
30
3.0
−
−
−
−
−
−
−
−
Vdc
Vdc
(BR)CEO
C
B
Collector−Base Breakdown Voltage
(I = 100 µAdc, I = 0)
(BR)CBO
C
E
Emitter−Base Breakdown Voltage
(I = 10 µAdc, I = 0)
V
−
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 25 Vdc, I = 0)
I
100
100
nAdc
nAdc
CBO
CB
Emitter Cutoff Current
(V = 2.0 Vdc, I = 0)
E
I
−
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
(I = 4.0 mAdc, V
C
h
FE
−
= 10 Vdc)
CE
MMBTH10LT1
MMBTH10−4LT1
60
120
−
−
−
240
Collector−Emitter Saturation Voltage
(I = 4.0 mAdc, I = 0.4 mAdc)
V
−
−
−
0.5
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 4.0 mAdc, V = 10 Vdc)
V
BE
−
0.95
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = 4.0 mAdc, V
= 10 Vdc, f = 100 MHz)
MMBTH10LT1
MMBTH10−4LT1
650
800
−
−
−
−
C
CE
Collector−Base Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
−
−
−
−
−
−
0.7
0.65
9.0
pF
pF
ps
cb
CB
Common−Base Feedback Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
E
C
rb
CB
Collector Base Time Constant
(I = 4.0 mAdc, V = 10 Vdc, f = 31.8 MHz)
E
rb′C
c
C
CB
http://onsemi.com
2
−
−
−
10
20
30
MMBTH10LT1, MMBTH10−4LT1
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
= 10 Vdc, I = 4.0 mAdc, T = 25°C)
CB
C A
y
ib
, INPUT ADMITTANCE
0
80
70
60
50
40
30
20
g
ib
−ꢀ10
−ꢀ20
−ꢀb
ib
1000 MHz
−ꢀ30
700
−ꢀ40
−ꢀ50
400
200
100
10
0
−ꢀ60
1000
100
200
300
400 500
700
0
10
20
30
40
g (mmhos)
ib
50
60
70
80
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
Figure 2. Polar Form
y
fb
, FORWARD TRANSFER ADMITTANCE
70
60
50
60
400
b
fb
200
50
600
100
40
30
700
−ꢀg
fb
40
30
20
10
0
1000 MHz
20
10
1000
100
200
300
400 500
700
70
60
50
40
30
g
20
10
0
−ꢀ10 −ꢀ20 −ꢀ30
f, FREQUENCY (MHz)
(mmhos)
fb
Figure 3. Rectangular Form
Figure 4. Polar Form
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3
MMBTH10LT1, MMBTH10−4LT1
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(V
= 10 Vdc, I = 4.0 mAdc, T = 25°C)
CB
C A
y , REVERSE TRANSFER ADMITTANCE
rb
0
5.0
4.0
100
200
−ꢀ1.0
MPS H11
400
700
3.0
2.0
1.0
−ꢀ2.0
−ꢀ3.0
−b
rb
−b
rb
MPS H10
−ꢀ4.0
−ꢀ5.0
−g
rb
1000 MHz
0.4 0.8 1.2 1.6 2.0
0
1000
−2.0 −1.8 −1.2 −0.8 −0.4
0
100
200
300
400 500
700
f, FREQUENCY (MHz)
g (mmhos)
rb
Figure 5. Rectangular Form
Figure 6. Polar Form
y
ob
, OUTPUT ADMITTANCE
10
10
1000 MHz
9.0
8.0
7.0
8.0
700
6.0
5.0
6.0
4.0
b
ob
4.0
3.0
400
200
2.0
1.0
0
2.0
0
g
ob
100
1000
0
2.0
4.0
g
6.0
8.0
10
100
200
300
400 500
700
f, FREQUENCY (MHz)
(mmhos)
ob
Figure 7. Rectangular Form
Figure 8. Polar Form
http://onsemi.com
4
MMBTH10LT1, MMBTH10−4LT1
PACKAGE DIMENSIONS
SOT−23
(TO−236AB)
CASE 318−08
ISSUE AH
NOTES:
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ꢁꢂ2. CONTROLLING DIMENSION: INCH.
ꢁꢂ3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
ꢁꢂ4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
Figure 9. SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MMBTH10LT1, MMBTH10−4LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBTH10LT1/D
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