MMBV809LT3G [ONSEMI]

Silicon Tuning Diode; 硅调谐二极管
MMBV809LT3G
型号: MMBV809LT3G
厂家: ONSEMI    ONSEMI
描述:

Silicon Tuning Diode
硅调谐二极管

二极管 变容二极管 光电二极管
文件: 总3页 (文件大小:47K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBV809LT1  
Preferred Device  
Silicon Tuning Diode  
This device is designed for 900 MHz frequency control and tuning  
applications. It provides solid−state reliability in replacement of  
mechanical tuning methods.  
Features  
http://onsemi.com  
Controlled and Uniform Tuning Ratio  
Available in Surface Mount Package  
Available in 8 mm Tape and Reel  
Pb−Free Packages are Available  
4.5−6.1 pF VOLTAGE VARIABLE  
CAPACITANCE DIODE  
MAXIMUM RATINGS  
3
1
CATHODE  
ANODE  
Rating  
Reverse Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
V
R
Forward Current  
I
20  
mAdc  
F
3
SOT−23 (TO−236)  
CASE 318  
Total Power Dissipation (Note 1)  
P
D
1
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
STYLE 8  
Derate above 25°C  
2
Junction Temperature  
T
+125  
°C  
°C  
J
Storage Temperature Range  
T
stg  
−55 to +125  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
5K M G  
1. FR5 Board 1.0 x 0.75 x 0.62 in.  
G
1
5K = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBV809LT1  
SOT−23  
3,000 / Tape & Reel  
MMBV809LT1G SOT−23  
(Pb−Free)  
3,000 / Tape & Reel  
MMBV809LT3  
SOT−23 10,000 / Tape & Reel  
MMBV809LT3G SOT−23 10,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBV809LT1/D  
 
MMBV809LT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic − All Types  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
V
20  
Vdc  
(BR)R  
(I = 10 mAdc)  
R
Reverse Voltage Leakage Current  
I
50  
nAdc  
R
(V = 15 Vdc)  
R
C , Diode Capacitance  
t
Q, Figure of Merit  
C , Capacitance Ratio  
R
V
= 2.0 Vdc, f = 1.0 MHz  
pF  
V
= 3.0 Vdc  
C /C  
2 8  
f = 1.0 MHz (Note 2)  
R
R
f = 500 MHz  
Device  
Min  
Typ  
Max  
Typ  
Min  
Max  
MMBV809LT1  
4.5  
5.3  
6.1  
75  
1.8  
2.6  
2. C is the ratio of C measured at 2.0 Vdc divided by C measured at 8.0 Vdc.  
R
t
t
TYPICAL CHARACTERISTICS  
10  
9
1000  
8
V = 3 Vdc  
R
7
6
5
4
3
2
1
0
T = 25°C  
A
100  
10  
0.1  
0.5  
1
2
3
4
5
8
10  
15  
1.0  
10  
V , REVERSE VOLTAGE (VOLTS)  
R
f, FREQUENCY (GHz)  
Figure 1. Diode Capacitance  
Figure 2. Figure of Merit  
1000  
800  
1.04  
1.03  
V = 3.0 Vdc  
R
f = 1.0 MHz  
V = 3.0 Vdc  
R
f = 1.0 MHz  
1.02  
1.01  
1.00  
0.99  
600  
400  
0.98  
0.97  
0.96  
−75  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
−50  
−25  
0
+25  
+50  
+75  
+100 +125  
f, FREQUENCY (GHz)  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 3. Series Resistance  
Figure 4. Diode Capacitance  
http://onsemi.com  
2
 
MMBV809LT1  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AN  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEE VIEW C  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
3
H
E
E
c
1
2
MILLIMETERS  
INCHES  
b
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.25  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
e
q
A
L
A1  
L1  
VIEW C  
H
E
2.10  
2.40  
2.64  
0.083  
0.094  
0.104  
STYLE 8:  
PIN 1. ANODE  
2. NO CONNECTION  
3. CATHODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMBV809LT1/D  

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