MMBZ27VCLT1G [ONSEMI]
40 Watt Peak Power Zener Transient Voltage Suppressors; 40瓦峰值功率齐纳瞬态电压抑制器
| 型号： | MMBZ27VCLT1G |
| 厂家： | 
ONSEMI |
| 描述： | 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ15VDLT1,
MMBZ27VCLT1
Preferred Devices
40 Watt Peak Power
Zener Transient Voltage
Suppressors
http://onsemi.com
SOT−23 Dual Common Cathode Zeners
for ESD Protection
1
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
The MMBZ27VCLT1 can be used to protect a single wire
communication network form EMI and ESD transient surge voltages.
The MMBZ27VCLT1 is recommended by the
Society of Automotive Engineers (SAE), February 2000, J2411
“Single Wire Can Network for Vehicle Applications” specification as
a solution for transient voltage problems.
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
MARKING
DIAGRAM
3
1
2
XXX MG
SOT−23
CASE 318
STYLE 9
G
1
xxx = 15D or 27C
Specification Features:
M
= Date Code
= Pb−Free Package
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 12.8 V, 22 V
G
(Note: Microdot may be in either location)
• Standard Zener Breakdown Voltage Range − 15 V, 27 V
ORDERING INFORMATION
• Peak Power − 40 W @ 1.0 ms (Bidirectional),
†
Device
Package
Shipping
per Figure 5 Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
MMBZ15VDLT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
MMBZ15VDLT1G SOT−23
(Pb−Free)
• Low Leakage < 100 nA
• Flammability Rating: UL 94 V−O
MMBZ15VDLT3
SOT−23 10,000/Tape & Reel
• Pb−Free Packages are Available
MMBZ15VDLT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
MMBZ27VCLT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
MMBZ27VCLT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
July, 2005 − Rev. 7
MMBZ15VDLT1/D
MMBZ15VDLT1, MMBZ27VCLT1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ T ≤ 25°C
P
pk
40
Watts
L
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C
°P °
D
225
1.8
°mW°
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
R
556
°C/W
q
JA
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C
°P °
D
300
2.4
°mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
R
417
− 55 to +150
260
°C/W
°C
q
JA
T , T
J
stg
T
°C
L
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
A
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
Clamping Voltage @ I
V
C
V
V
C
PP
BR RWM
V
I
V
F
R
T
V
Working Peak Reverse Voltage
RWM
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
PP
V
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
Uni−Directional TVS
F
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA)
F
F
Breakdown Voltage
V
C
@ I (Note 5)
PP
V
BR
(Note 4) (V)
@ I
V
C
I
PP
V
RWM
I
R
@ V
V
BR
T
RWM
Device
mV/5C
12
Volts
nA
Min
14.3
Nom
Max
mA
V
A
Marking
Device
MMBZ15VDLT1, G*
15D
12.8
100
15
15.8
1.0
21.2
1.9
(V = 1.1 V Max @ I = 200 mA)
F
F
Breakdown Voltage
V
C
@ I (Note 5)
PP
V
BR
(Note 4) (V)
@ I
V
C
I
PP
V
RWM
I
R
@ V
V
BR
T
RWM
Device
mV/5C
26
Volts
nA
Min
Nom
Max
mA
V
A
Marking
Device
MMBZ27VCLT1, G*
27C
22
50
25.65
27
28.35
1.0
38
1.0
*The “G” suffix indicates Pb−Free package available.
4. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
5. Surge current waveform per Figure 5 and derate per Figure 6
http://onsemi.com
2
MMBZ15VDLT1, MMBZ27VCLT1
TYPICAL CHARACTERISTICS
MMBZ15VDLT1
MMBZ27VCLT1
17
16
15
29
28
27
BIDIRECTIONAL
BIDIRECTIONAL
14
13
26
25
UNIDIRECTIONAL
−ꢀ40
+ꢀ25
+ꢀ85
+ꢀ125
−ꢀ55
+ꢀ25
+ꢀ85
+ꢀ125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Breakdown Voltage
versus Temperature
10000
100
10
300
250
200
ALUMINA SUBSTRATE
150
100
50
1
FR−5 BOARD
0.1
0.01
0
−ꢀ40
+ꢀ25
+ꢀ85
+ꢀ125
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Typical Leakage Current
versus Temperature
Figure 4. Steady State Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
PEAK VALUEꢁꢂꢁI
PP
100
50
0
I
PP
HALF VALUEꢁꢂ
2
t
P
0
1
2
3
4
0
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
A
t, TIME (ms)
Figure 5. Pulse Waveform
Figure 6. Pulse Derating Curve
http://onsemi.com
3
MMBZ15VDLT1, MMBZ27VCLT1
TYPICAL APPLICATIONS
V
Batt
Single Wire
CAN Transceiver
47 mH
Bus
Loss of
Ground
Protection
Circuit
R
Load
9.09 kW 1%
*
Load
C
Load
GND
220 pF 10%
*ESD Protection − MMBZ27VCLT1 or equivalent. May be
located in each ECU (C needs to be reduced accordingly)
Load
or at a central point near the DLC.
Figure 7. Single Wire CAN Network
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6, page 11).
http://onsemi.com
4
MMBZ15VDLT1, MMBZ27VCLT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
E
H
A
E
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
e
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
C
A1
b
L
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MMBZ15VDLT1, MMBZ27VCLT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
local Sales Representative.
MMBZ15VDLT1/D
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