MMBZ27VCWT3G [ONSEMI]

40 Watt Peak Power Zener Surge Protection Device;
MMBZ27VCWT3G
型号: MMBZ27VCWT3G
厂家: ONSEMI    ONSEMI
描述:

40 Watt Peak Power Zener Surge Protection Device

文件: 总5页 (文件大小:120K)
中文:  中文翻译
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40 Watt Peak Power  
Zener Surge Protection  
Device  
SC70 Dual Common Cathode Zeners  
MMBZ27VCW  
These dual monolithic silicon zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
cathode design protects two separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
www.onsemi.com  
1
3
2
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
Specification Features:  
SC70 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range 22 V  
Standard Zener Breakdown Voltage 27 V  
MARKING  
DIAGRAM  
AC MG  
Peak Power 40 W @ 1.0 ms (Bidirectional),  
SC70  
CASE 419  
STYLE 4  
G
per Figure 4 Waveform  
ESD Rating of Class N (exceeding 16 kV) per the Human  
Body Model  
1
AC = Specific Device Code  
Low Leakage < 100 nA  
M
= Date Code  
= PbFree Package  
G
Flammability Rating: UL 94 VO  
(Note: Microdot may be in either location)  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
ORDERING INFORMATION  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Device  
Package  
Shipping  
MMBZ27VCWT1G  
SC70  
(PbFree)  
3000 / Tape &  
Reel  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SZMMBZ27VCWT1G  
MMBZ27VCWT3G  
SC70  
(PbFree)  
3000 / Tape &  
Reel  
SC70  
(PbFree)  
10000 / Tape &  
Reel  
SZMMBZ27VCWT3G  
SC70  
(PbFree)  
10000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
August, 2020 Rev. 3  
MMBZ27VCW/D  
MMBZ27VCW  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation @ 1.0 ms (Note 1) @ T 25°C  
Symbol  
Value  
Unit  
P
pk  
40  
Watts  
L
Total Power Dissipation on FR5 Board (Note 2) @ T = 25°C  
°P °  
D
200  
1.6  
°mW°  
mW/°C  
A
Derate above 25°C  
Thermal Resistance JunctiontoAmbient  
Junction and Storage Temperature Range  
R
618  
°C/W  
°C  
q
JA  
T , T  
J
55 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 4 and derate above T = 25°C per Figure 5.  
A
2. FR5 = 1.0 x 0.75 x 0.62 in.  
ELECTRICAL CHARACTERISTICS  
A
I
(T = 25°C unless otherwise noted)  
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
Clamping Voltage @ I  
V
C
V
V
C
PP  
BR RWM  
V
I
V
F
R
T
V
Working Peak Reverse Voltage  
RWM  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
V
BR  
Maximum Temperature Coefficient of V  
BR  
I
F
Forward Current  
UniDirectional TVS  
V
F
Forward Voltage @ I  
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(V = 1.1 V Max @ I = 200 mA)  
F
F
Breakdown Voltage  
V
C
@ I (Note 4)  
PP  
V
BR  
(Note 3) (V)  
@ I  
V
C
I
PP  
V
RWM  
I
R
@ V  
V
BR  
T
RWM  
Device  
mV/5C  
Volts  
nA  
Min  
Nom  
Max  
mA  
V
A
Marking  
Device  
MMBZ27VCWT1G,  
SZMMBZ27VCWT1G,  
MMBZ27VCWT3G,  
SZMMBZ27VCWT3G  
AC  
22  
50  
25.65  
27  
28.35  
1.0  
38  
1.0  
26  
3. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
4. Surge current waveform per Figure 4 and derate per Figure 5  
www.onsemi.com  
2
 
MMBZ27VCW  
TYPICAL CHARACTERISTICS  
29  
28  
27  
BIDIRECTIONAL  
26  
25  
-ꢀ55  
+ꢀ25  
+ꢀ85  
+ꢀ125  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
10000  
100  
10  
300  
250  
200  
ALUMINA SUBSTRATE  
150  
100  
1
FR-5 BOARD  
0.1  
50  
0
0.01  
-ꢀ40  
+ꢀ25  
+ꢀ85  
+ꢀ125  
0
25  
50  
75  
100  
125  
150  
175  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 2. Typical Leakage Current  
versus Temperature  
Figure 3. Steady State Power Derating Curve  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
t 10 ms  
r
PEAK CURRENT DECAYS TO  
50% OF I .  
PP  
PEAK VALUEꢁ—ꢁI  
PP  
100  
50  
0
I
PP  
HALF VALUEꢁ—  
2
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150  
175  
200  
T , AMBIENT TEMPERATURE (°C)  
A
t, TIME (ms)  
Figure 4. Pulse Waveform  
Figure 5. Pulse Derating Curve  
www.onsemi.com  
3
MMBZ27VCW  
TYPICAL APPLICATIONS  
V
Batt  
Single Wire  
CAN Transceiver  
47 mH  
Bus  
Loss of  
Ground  
Protection  
Circuit  
R
Load  
9.09 kW 1%  
*
Load  
C
Load  
GND  
220 pF 10%  
*ESD Protection MMBZ27VCWT1 or equivalent. May be  
located in each ECU (C needs to be reduced accordingly)  
Load  
or at a central point near the DLC.  
Figure 6. Single Wire CAN Network  
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the  
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification  
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common  
cathode zener configuration.  
www.onsemi.com  
4
MMBZ27VCW  
PACKAGE DIMENSIONS  
SC70 (SOT323)  
CASE 41904  
ISSUE N  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
e1  
L
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
0.38  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
0.015  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
H
2.10  
0.083  
E
STYLE 4:  
c
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
A
A2  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
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literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
Email Requests to: orderlit@onsemi.com  
TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 8002829855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
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