MMBZ27VCWT3G [ONSEMI]
40 Watt Peak Power Zener Surge Protection Device;型号: | MMBZ27VCWT3G |
厂家: | ONSEMI |
描述: | 40 Watt Peak Power Zener Surge Protection Device |
文件: | 总5页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
40 Watt Peak Power
Zener Surge Protection
Device
SC−70 Dual Common Cathode Zeners
MMBZ27VCW
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
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1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
Specification Features:
• SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 22 V
• Standard Zener Breakdown Voltage − 27 V
MARKING
DIAGRAM
AC MG
• Peak Power − 40 W @ 1.0 ms (Bidirectional),
SC−70
CASE 419
STYLE 4
G
per Figure 4 Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
1
AC = Specific Device Code
• Low Leakage < 100 nA
M
= Date Code
= Pb−Free Package
G
• Flammability Rating: UL 94 V−O
(Note: Microdot may be in either location)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
ORDERING INFORMATION
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
†
Device
Package
Shipping
MMBZ27VCWT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
SZMMBZ27VCWT1G
MMBZ27VCWT3G
SC−70
(Pb−Free)
3000 / Tape &
Reel
SC−70
(Pb−Free)
10000 / Tape &
Reel
SZMMBZ27VCWT3G
SC−70
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
August, 2020 − Rev. 3
MMBZ27VCW/D
MMBZ27VCW
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) @ T ≤ 25°C
Symbol
Value
Unit
P
pk
40
Watts
L
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C
°P °
D
200
1.6
°mW°
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
R
618
°C/W
°C
q
JA
T , T
J
− 55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 4 and derate above T = 25°C per Figure 5.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
Clamping Voltage @ I
V
C
V
V
C
PP
BR RWM
V
I
V
F
R
T
V
Working Peak Reverse Voltage
RWM
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
PP
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
Uni−Directional TVS
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 1.1 V Max @ I = 200 mA)
F
F
Breakdown Voltage
V
C
@ I (Note 4)
PP
V
BR
(Note 3) (V)
@ I
V
C
I
PP
V
RWM
I
R
@ V
V
BR
T
RWM
Device
mV/5C
Volts
nA
Min
Nom
Max
mA
V
A
Marking
Device
MMBZ27VCWT1G,
SZMMBZ27VCWT1G,
MMBZ27VCWT3G,
SZMMBZ27VCWT3G
AC
22
50
25.65
27
28.35
1.0
38
1.0
26
3. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
4. Surge current waveform per Figure 4 and derate per Figure 5
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2
MMBZ27VCW
TYPICAL CHARACTERISTICS
29
28
27
BIDIRECTIONAL
26
25
-ꢀ55
+ꢀ25
+ꢀ85
+ꢀ125
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
10000
100
10
300
250
200
ALUMINA SUBSTRATE
150
100
1
FR-5 BOARD
0.1
50
0
0.01
-ꢀ40
+ꢀ25
+ꢀ85
+ꢀ125
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 2. Typical Leakage Current
versus Temperature
Figure 3. Steady State Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
t ≤ 10 ms
r
PEAK CURRENT DECAYS TO
50% OF I .
PP
PEAK VALUEꢁ—ꢁI
PP
100
50
0
I
PP
HALF VALUEꢁ—
2
t
P
0
1
2
3
4
0
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
A
t, TIME (ms)
Figure 4. Pulse Waveform
Figure 5. Pulse Derating Curve
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3
MMBZ27VCW
TYPICAL APPLICATIONS
V
Batt
Single Wire
CAN Transceiver
47 mH
Bus
Loss of
Ground
Protection
Circuit
R
Load
9.09 kW 1%
*
Load
C
Load
GND
220 pF 10%
*ESD Protection − MMBZ27VCWT1 or equivalent. May be
located in each ECU (C needs to be reduced accordingly)
Load
or at a central point near the DLC.
Figure 6. Single Wire CAN Network
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common
cathode zener configuration.
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4
MMBZ27VCW
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 4:
c
PIN 1. CATHODE
2. CATHODE
3. ANODE
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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PUBLICATION ORDERING INFORMATION
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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
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