MMBZ39VCLT3G [ONSEMI]

Zener Diode Protection, Common Cathode, 40 Watt Peak Power, SOT-23;
MMBZ39VCLT3G
型号: MMBZ39VCLT3G
厂家: ONSEMI    ONSEMI
描述:

Zener Diode Protection, Common Cathode, 40 Watt Peak Power, SOT-23

二极管 瞬态抑制器
文件: 总8页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBZ15VDLT1,  
MMBZ27VCLT1  
Preferred Devices  
40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
http://onsemi.com  
SOT–23 Dual Common Cathode Zeners  
for ESD Protection  
1
These dual monolithic silicon zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
cathode design protects two separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
3
2
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
3
Specification Features:  
SOT–23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range – 12.8 V, 22 V  
1
2
SOT–23  
CASE 318  
STYLE 9  
Standard Zener Breakdown Voltage Range – 15 V, 27 V  
Peak Power – 40 Watts @ 1.0 ms (Bidirectional),  
per Figure 5. Waveform  
ESD Rating of Class N (exceeding 16 kV) per the Human  
Body Model  
MARKING DIAGRAM  
Maximum Clamping Voltage @ Peak Pulse Current  
Low Leakage < 100 nA  
xxx  
Flammability Rating UL 94V–O  
Mechanical Characteristics:  
xxx = 15D or 27C  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
M
= Date Code  
ORDERING INFORMATION  
Device  
Package  
SOT–23  
SOT–23  
SOT–23  
Shipping  
MMBZ15VDLT1  
MMBZ15VDLT3  
MMBZ27VCLT1  
3000/Tape & Reel  
10,000/Tape & Reel  
3000/Tape & Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
April, 2001 – Rev. 5  
MMBZ15VDLT1/D  
MMBZ15VDLT1, MMBZ27VCLT1  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation @ 1.0 ms (Note 1.) @ T 25°C  
Symbol  
Value  
Unit  
P
pk  
40  
Watts  
L
Total Power Dissipation on FR–5 Board (Note 2.) @ T = 25°C  
Derate above 25°C  
°P °  
D
225  
1.8  
°mW°  
mW/°C  
A
Thermal Resistance Junction to Ambient  
R
556  
°C/W  
θ
JA  
Total Power Dissipation on Alumina Substrate (Note 3.) @ T = 25°C  
Derate above 25°C  
°P °  
D
300  
2.4  
°mW  
mW/°C  
A
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature Range  
Lead Solder Temperature – Maximum (10 Second Duration)  
R
417  
– 55 to +150  
230  
°C/W  
°C  
θ
JA  
T , T  
J
stg  
T
°C  
L
1. Non–repetitive current pulse per Figure 5. and derate above T = 25°C per Figure 6.  
A
2. FR–5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
A
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
BR RWM  
V
I
V
F
V
RWM  
Working Peak Reverse Voltage  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
BR  
BR  
I
F
Forward Current  
Uni–Directional TVS  
V
F
Forward Voltage @ I  
F
http://onsemi.com  
2
MMBZ15VDLT1, MMBZ27VCLT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(VF = 0.9 V Max @ IF = 10 mA)  
Breakdown Voltage  
V @ I (Note 5.)  
C PP  
V
BR  
(Note 4.) (V)  
@ I  
V
C
I
PP  
V
RWM  
I
R
@ V  
QV  
BR  
T
RWM  
Device  
mV/5C  
12  
Volts  
nA  
Min  
14.3  
Nom  
Max  
mA  
V
A
Marking  
Device  
MMBZ15VDLT1  
15D  
12.8  
100  
15  
15.8  
1.0  
21.2  
1.9  
(VF = 1.1 V Max @ IF = 200 mA)  
Breakdown Voltage  
V
C
@ I (Note 5.)  
PP  
V
BR  
(Note 4.) (V)  
@ I  
V
C
I
PP  
V
RWM  
I
R
@ V  
QV  
T
RWM  
BR  
Device  
mV/5C  
26  
Volts  
nA  
Min  
Nom  
Max  
mA  
V
A
Marking  
Device  
MMBZ27VCLT1  
27C  
22  
50  
25.65  
27  
28.35  
1.0  
38  
1.0  
4. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Surge current waveform per Figure 5. and derate per Figure 6.  
TYPICAL CHARACTERISTICS  
MMBZ15VDLT1  
MMBZ27VCLT1  
17  
16  
15  
29  
28  
27  
BIDIRECTIONAL  
BIDIRECTIONAL  
14  
13  
26  
25  
UNIDIRECTIONAL  
-ā40  
+ā25  
+ā85  
+ā125  
-ā55  
+ā25  
+ā85  
+ā125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Breakdown Voltage  
versus Temperature  
http://onsemi.com  
3
MMBZ15VDLT1, MMBZ27VCLT1  
10000  
100  
10  
1
0.1  
0.01  
-ā40  
+ā25  
+ā85  
+ā125  
TEMPERATURE (°C)  
Figure 3. Typical Leakage Current  
versus Temperature  
300  
250  
200  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
ALUMINA SUBSTRATE  
50% OF I  
.
PP  
PEAK VALUEĂĊĂI  
PP  
100  
50  
0
I
PP  
150  
100  
50  
HALF VALUEĂĊ  
2
FR-5 BOARD  
t
P
0
0
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
4
TEMPERATURE (°C)  
t, TIME (ms)  
Figure 4. Steady State Power Derating Curve  
Figure 5. Pulse Waveform  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 6. Pulse Derating Curve  
http://onsemi.com  
4
MMBZ15VDLT1, MMBZ27VCLT1  
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the  
total design. The footprint for the semiconductor packages  
must be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
SOT–23  
SOT–23 POWER DISSIPATION  
The power dissipation of the SOT–23 is a function of the  
SOLDERING PRECAUTIONS  
drain pad size. This can vary from the minimum pad size  
for soldering to a pad size given for maximum power  
dissipation. Power dissipation for a surface mount device is  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within  
a short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
Always preheat the device.  
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering  
method, the difference shall be a maximum of 10°C.  
The soldering temperature and time shall not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient shall be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and  
result in latent failure due to mechanical stress.  
Mechanical stress or shock should not be applied  
during cooling.  
determined by T  
, the maximum rated junction  
J(max)  
temperature of the die, R , the thermal resistance from  
θJA  
the device junction to ambient, and the operating  
temperature, T . Using the values provided on the data  
A
sheet for the SOT–23 package, P can be calculated as  
D
follows:  
TJ(max) – TA  
PD =  
Rθ  
JA  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values  
into the equation for an ambient temperature T of 25°C,  
A
one can calculate the power dissipation of the device which  
in this case is 225 milliwatts.  
150°C – 25°C  
PD =  
= 225 milliwatts  
556°C/W  
The 556°C/W for the SOT–23 package assumes the use  
of the recommended footprint on a glass epoxy printed  
circuit board to achieve a power dissipation of 225  
milliwatts. There are other alternatives to achieving higher  
power dissipation from the SOT–23 package. Another  
alternative would be to use a ceramic substrate or an  
aluminum core board such as Thermal Clad . Using a  
board material such as Thermal Clad, an aluminum core  
board, the power dissipation can be doubled using the same  
footprint.  
* Soldering a device without preheating can cause  
excessive thermal shock and stress which can result in  
damage to the device.  
http://onsemi.com  
5
MMBZ15VDLT1, MMBZ27VCLT1  
Transient Voltage Suppressors – Surface Mount  
40 Watts Peak Power  
SOT–23  
TO–236AB  
CASE 318–08  
ISSUE AF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
L
3
INCHES  
DIM MIN MAX  
MILLIMETERS  
S
C
B
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
1
2
A
B
C
D
G
H
J
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040  
0.0034 0.0070  
0.0140 0.0285  
0.0350 0.0401  
0.0830 0.1039  
0.0177 0.0236  
V
G
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
K
L
S
V
H
J
D
K
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
http://onsemi.com  
6
MMBZ15VDLT1, MMBZ27VCLT1  
Notes  
http://onsemi.com  
7
MMBZ15VDLT1, MMBZ27VCLT1  
Thermal Clad is a trademark of the Bergquist Company  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
MMBZ15VDLT1/D  

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