MMBZXXVXL [ONSEMI]
Zener Diodes, 40 Watt Peak Power;
| 型号： | MMBZXXVXL |
| 厂家： | 
ONSEMI |
| 描述： | Zener Diodes, 40 Watt Peak Power |
| 文件： | 总6页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZxxVxL,
SZMMBZxxVxL Series
Zener Diodes, 40 Watt Peak
Power
SOT−23 Dual Common Cathode Zeners
www.onsemi.com
These dual monolithic silicon zener diodes are designed for
applications requiring protection capability. They are intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment and
other applications. Their dual junction common cathode design protects
two separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
SOT−23
CASE 318
STYLE 9
Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V
ANODE 1
ANODE 2
3 CATHODE
• Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
• ESD Rating of Class 3B (exceeding 16 kV) per the Human
Body Model
MARKING DIAGRAM
• ESD Rating of IEC61000−4−2 Level 4, 30 kV Contact Discharge
• Low Leakage < 100 nA
XXX MG
G
• Flammability Rating: UL 94 V−O
1
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
XXX = 15D, 27C or 39C
M
G
= Date Code
= Pb−Free Package
• These are Pb−Free Devices
Mechanical Characteristics:
(Note: Microdot may be in either location)
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
†
Device
Package
Shipping
MMBZ15VDLT1G,
SOT−23
3,000 /
SZMMBZ15VDLT1G
(Pb−Free)
Tape & Reel
MMBZ15VDLT3G,
SOT−23
10,000 /
SZMMBZ15VDLT3G
(Pb−Free)
Tape & Reel
MMBZxxVCLT1G,
SOT−23
3,000 /
SZMMBZxxVCLT1G
(Pb−Free)
Tape & Reel
MMBZxxVCLT3G,
SOT−23
10,000 /
SZMMBZxxVCLT3G
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
August, 2018 − Rev. 17
MMBZ15VDLT1/D
MMBZxxVxL, SZMMBZxxVxL Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ T ≤ 25°C
P
pk
40
Watts
L
Total Power Dissipation on FR−5 Board (Note 2)
°P °
D
@ T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
R
556
°C/W
q
JA
Total Power Dissipation on Alumina Substrate (Note 3)
°P °
D
°
@ T = 25°C
300
2.4
mW
A
Derate above 25°C
mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
R
417
− 55 to +150
260
°C/W
°C
q
JA
T , T
J
stg
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
I
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
I
F
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
R
I
T
V
F
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
V
BR
Maximum Temperature Coefficient of V
BR
I
PP
I
F
Forward Current
Uni−Directional Zener
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA)
F
F
Breakdown Voltage
V
C
@ I (Note 5)
PP
V
BR
(Note 4) (V)
@ I
V
C
I
PP
V
RWM
I
R
@ V
V
BR
T
RWM
Device
mV/5C
12
Volts
nA
Min
14.3
Nom
Max
mA
V
A
Marking
Device*
MMBZ15VDLT1G/T3G
15D
12.8
100
15
15.8
1.0
21.2
1.9
(V = 1.1 V Max @ I = 200 mA)
F
F
Breakdown Voltage
V
C
@ I (Note 5)
PP
V
BR
(Note 4) (V)
@ I
V
C
I
PP
V
RWM
I
R
@ V
V
BR
T
RWM
Device
mV/5C
Volts
22
nA
50
50
Min
Nom
27
Max
28.35
40.95
mA
1.0
1.0
V
A
Marking
Device*
MMBZ27VCLT1G/T3G
MMBZ39VCLT1G/T3G
27C
39C
25.65
37.05
38
55
1.0
26
31.2
39
0.76
35.3
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
www.onsemi.com
2
MMBZxxVxL, SZMMBZxxVxL Series
TYPICAL CHARACTERISTICS
MMBZ15VDL, SZMMBZ15VDL
MMBZ27VCL, SZMMBZ27VCL
17
16
15
29
28
27
BIDIRECTIONAL
BIDIRECTIONAL
14
13
26
UNIDIRECTIONAL
25
-ꢀ55
-ꢀ40
+ꢀ25
+ꢀ85
+ꢀ125
+ꢀ25
+ꢀ85
+ꢀ125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Breakdown Voltage
versus Temperature
1000
100
10
300
250
200
ALUMINA SUBSTRATE
150
100
50
1
FR-5 BOARD
0.1
0.01
0
-ꢀ40
+ꢀ25
+ꢀ85
+ꢀ125
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Typical Leakage Current
versus Temperature
Figure 4. Steady State Power Derating Curve
100
90
80
70
60
50
40
30
20
10
0
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
t ≤ 10 ms
r
50% OF I .
PP
PEAK VALUEꢁ—ꢁI
PP
100
50
0
I
PP
HALF VALUEꢁ—
2
t
P
0
1
2
3
4
0
25
50
75
100
125
150
175
200
T , AMBIENT TEMPERATURE (°C)
A
t, TIME (ms)
Figure 5. Pulse Waveform
Figure 6. Pulse Derating Curve
www.onsemi.com
3
MMBZxxVxL, SZMMBZxxVxL Series
TYPICAL APPLICATIONS
V
Batt
Single Wire
CAN Transceiver
47 mH
Bus
Loss of
Ground
Protection
Circuit
R
Load
9.09 kW 1%
*
Load
C
Load
GND
220 pF 10%
*ESD Protection − MMBZ27VCL or equivalent. May be located
in each ECU (C needs to be reduced accordingly) or at a
Load
central point near the DLC.
Figure 7. Single Wire CAN Network
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common
cathode zener configuration.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 1
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