MMT10B310T3G [ONSEMI]
Thyristor Surge Protectors High Voltage Bidirectional TSPD; 晶闸管浪涌保护器高压双向TSPD
| 型号： | MMT10B310T3G |
| 厂家： | 
ONSEMI |
| 描述： | Thyristor Surge Protectors High Voltage Bidirectional TSPD |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
http://onsemi.com
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
(
)
BIDIRECTIONAL TSPD
100 AMP SURGE
265 thru 365 VOLTS
Secondary protection applications for electronic telecom equipment
at customer premises.
MT1
MT2
Features
• Outstanding High Surge Current Capability: 100 A 10x1000 msec
Guaranteed at the extended temp range of −20°C to 65°C
• The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
SMB
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Complies with GR1089 Second Level Surge Spec at 500 A
2x10 msec Waveforms
MARKING DIAGRAMS
AYWW
RPDx G
G
•
Indicates UL Registered − File #E210057
• Pb−Free Packages are Available
A
Y
= Assembly Location
= Year
WW
= Work Week
RPDx
x
= Device Code
= F, G, or J
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 8
MMT10B230T3/D
MMT10B230T3, MMT10B260T3, MMT10B310T3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Off−State Voltage − Maximum
V
V
DM
MMT10B230T3
MMT10B260T3
MMT10B310T3
"170
"200
"270
Maximum Pulse Surge Short Circuit Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2) (−20°C to +65°C)
2 x 10 msec
A(pk)
I
I
I
"500
"180
"100
10 x 700 msec
10 x 1000 msec
PPS1
PPS2
PPS3
Maximum Non−Repetitive Rate of Change of On−State Current
Double Exponential Waveform,
di/dt
"100
A/ms
R = 2.0, L = 1.5 mH, C = 1.67 mF,
I
= 110A
pk
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
−40 to +125
°C
J1
Overload Junction Temperature − Maximum Conducting State Only
T
+175
4000
260
°C
W
J2
Instantaneous Peak Power Dissipation (I = 100 A, 10x1000 msec @ 25°C)
P
pk
PK
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
°C
L
ORDERING INFORMATION
†
Device
Package
Shipping
MMT10B230T3
SMB
MMT10B230T3G
SMB
(Pb−Free)
MMT10B260T3
SMB
(12mm) Tape & Reel
2500 Units per Reel
MMT10B260T3G
SMB
(Pb−Free)
MMT10B310T3
SMB
MMT10B310T3G
SMB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MMT10B230T3, MMT10B260T3, MMT10B310T3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Breakover Voltage (Both polarities)
Symbol
V
Min
Typ
Max
Unit
V
(BO)
(dv/dt = 100 V/ms, I = 1.0 A, Vdc = 1000 V)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
−
−
−
−
−
−
265
320
365
SC
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
−
−
−
−
−
−
290
340
400
Breakover Voltage (Both polarities)
V
V
(BO)
(f = 60 Hz, I = 1.0 A(rms), V
R = 1.0 kW, t = 0.5 cycle) (Note 3)
I
= 1000 V(rms), MMT10B230T3, G
MMT10B260T3, G
−
−
−
−
−
−
265
320
365
SC
OC
MMT10B310T3, G
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
−
−
−
−
−
−
290
340
400
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I = 1.0 mA) Both polarities
dV
/dT
−
0.08
−
%/°C
(BO)
J
V
V
(BR)
(BR)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
−
−
−
190
240
280
−
−
−
Off State Current (V = 50 V) Both polarities
I
I
−
−
−
−
2.0
5.0
mA
V
D1
D1
D2
Off State Current (V = V ) Both polarities
D2
DM
On−State Voltage (I = 1.0 A)
V
−
1.53
260
270
−
5.0
T
T
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V
Both polarities
= 1000 V(rms), R = 1.0 kW)
I
−
−
mA
mA
V/ms
pF
DM
S
BO
Holding Current (Both polarities)
= 500 Volts; I (Initiating Current) = "1.0 A
(Note 3)
I
150
2000
−
H
V
S
T
Critical Rate of Rise of Off−State Voltage
dv/dt
−
(Linear waveform, V = Rated V , T = 25°C)
D
BR
J
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
−
−
65
160
−
200
O
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
V
TM
I
, I
D1 D2
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
V
(BO)
V
V
V
, V
D2
D1
I
BR
BO
H
I
(BO)
I
I
D2
D1
I
I
BO
+ Voltage
H
V
V
V
(BR)
D1
D2
V
On State Voltage
TM
http://onsemi.com
3
MMT10B230T3, MMT10B260T3, MMT10B310T3
100
340
320
V
= 50V
D1
MMT10B310T3
300
280
260
240
220
10
1
MMT10B260T3
MMT10B230T3
0.1
200
180
160
0.01
0
20
40
60
80
100
120
140
−50
−25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Off−State Current versus Temperature
Figure 2. Breakdown Voltage versus Temperature
1000
360
340
320
300
280
260
240
220
900
800
700
600
500
400
300
MMT10B310T3
MMT10B260T3
MMT10B230T3
200
180
200
100
−50
−25
0
25
50
75
100
125
75
−50
−25
0
25
50
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. Breakover Voltage versus Temperature
Figure 4. Holding Current versus Temperature
100
t = rise time to peak value
r
t = decay time to half value
f
Peak
Value
100
10
Half Value
50
0
1
0.01
0 t
r
t
f
0.1
1
10
100
TIME (ms)
TIME (sec)
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
http://onsemi.com
4
MMT10B230T3, MMT10B260T3, MMT10B310T3
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
TIP
GND
TELECOM
OUTSIDE
PLANT
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
TELECOM
OUTSIDE
PLANT
GND
EQUIPMENT
RING
HEAT COIL
http://onsemi.com
5
MMT10B230T3, MMT10B260T3, MMT10B310T3
PACKAGE DIMENSIONS
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
S
A
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
D
B
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
C
H
J
K
P
SOLDERING FOOTPRINT*
0.089
2.261
0.108
2.743
inches
mm
0.085
2.159
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMT10B230T3/D
相关型号：
MMT123J100BCK
Film Capacitor, Polyester, 100V, 5% +Tol, 5% -Tol, 0.012uF, Through Hole Mount, RADIAL LEADED
KEMET
MMT123J250AC
CAPACITOR, METALLIZED FILM, POLYESTER, 250V, 0.012uF, THROUGH HOLE MOUNT, RADIAL LEADED
KEMET
MMT124J250AC
CAPACITOR, METALLIZED FILM, POLYESTER, 250V, 0.12uF, THROUGH HOLE MOUNT, RADIAL LEADED
KEMET
MMT124J250RC
CAPACITOR, METALLIZED FILM, POLYESTER, 250V, 0.12uF, THROUGH HOLE MOUNT, RADIAL LEADED
KEMET
MMT124J50AC
CAPACITOR, METALLIZED FILM, POLYESTER, 50V, 0.12uF, THROUGH HOLE MOUNT, RADIAL LEADED
KEMET
MMT124J50ACK
Film Capacitor, Polyester, 50V, 5% +Tol, 5% -Tol, 0.12uF, Through Hole Mount, RADIAL LEADED
KEMET
MMT125J50RCK
Film Capacitor, Polyester, 50V, 5% +Tol, 5% -Tol, 1.2uF, Through Hole Mount, RADIAL LEADED
KEMET
MMT125J63BCK
Film Capacitor, Polyester, 63V, 5% +Tol, 5% -Tol, 1.2uF, Through Hole Mount, RADIAL LEADED
KEMET
©2020 ICPDF网 联系我们和版权申明