MMVL535T1 [ONSEMI]
15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE; 15伏电压变容二极管
| 型号： | MMVL535T1 |
| 厂家： | 
ONSEMI |
| 描述： | 15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMVL535T1/D
SEMICONDUCTOR TECHNICAL DATA
15 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODE
This device is designed for UHF tuning and general frequency control and tuning.
This device is supplied in the SOD–323 plastic surface mount package for high
volume, pick and place assembly requirements, and is a member of the Motorola
microExecutive series.
•
•
•
•
•
High Figure of Merit — Q
Guaranteed Capacitance Range
Controlled and Uniform Tuning Ratio
0805 Footprint Compatible SOD–323 package
Available in tape and reel
1
2
Cathode
Anode
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
1
A
Rating
Symbol
Value
Unit
mAdc
Vdc
°C
2
Forward Current
Reverse Voltage
I
F
20
15
V
R
CASE 477–02, STYLE 1
SOD–323
Junction Temperature
T
J
125
Storage Temperature Range
T
stg
–55 to +125
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Voltage
(I = 1.0 µAdc)
R
V
R
15
—
—
Vdc
Reverse Current
(V = 15 Vdc)
R
I
C
C
—
—
8.0
nAdc
pF
R
Capacitance
(V = 1 V, f = 1.0 MHz)
R
1V
4V
17.5
9.0
18.7
10.5
20
Capacitance
(V = 4 V, f = 1.0 MHz)
R
pF
12.0
Capacitance
(V = 10 V, f = 1.0 MHz)
R
C
pF
10V
5.4
2.6
—
6.0
3.1
6.6
3.7
0.5
Capacitance Ratio
C
1V/10V
Series Resistance
(V = 5.0 V, f = 470 MHz)
R
r
s
0.27
Replaces MMVL535
Motorola, Inc. 1998
TYPICAL DEVICE CHARACTERISTICS
100
10
T
= 80°C
A
1.0
T
= 60°C
A
10
0.1
0.01
T
= 25°C
A
1.0
0.001
8
0
2
4
6
10
12
14
16
0
2
4
6
8
10
12
14
16
V
, REVERSE VOLTAGE (VOLTS)
V
, REVERSE VOLTAGE (VOLTS)
R
R
Figure 2. Reverse Current versus Reverse
Voltage
Figure 1. Capacitance versus Reverse Voltage
0.3
0.2
0.40
0.30
V
= 1 V
R
0.20
0.10
V
= 10 V
R
0.1
0.0
0.00
10
1.0
, REVERSE VOLTAGE (VOLTS)
100
0
100
1000
V
R
f, FREQUENCY (MHz)
Figure 4. Series Resistance versus Frequency
Figure 3. Series Resistance versus Reverse
Voltage
5
4
3
2
10000
1000
100
V
= 1.0 Vdc
R
V
= 2.0 Vdc
R
V
V
= 10 V
= 1 V
R
V
= 4.0 Vdc
R
1
0
V
= 10 Vdc
R
R
–1
–2
–3
–4
10
1.0
–40
–20
0
+20
+40
+60
C)
+80
+100
1000
100
T , AMBIENT TEMPERATURE (
°
f, FREQUENCY (MHz)
A
Figure 5. Capacitance Change Ratio versus
Ambient Temperature
Figure 6. Quality versus Frequency
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
K
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
1
B
D
2
MILLIMETERS
INCHES
DIM
A
B
C
D
MIN
1.60
1.15
0.80
0.25
MAX
1.80
1.35
1.00
0.40
MIN
MAX
0.071
0.053
0.039
0.016
0.063
0.045
0.031
0.010
E
C
E
H
J
K
0.15 REF
0.006 REF
0.00
0.089
2.30
0.10
0.000
0.004
0.177 0.0035 0.0070
2.70 0.091 0.106
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
J
NOTE 3
CASE 477–02
SOD–323
ISSUE A
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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