MOC3052SR2M [ONSEMI]

三路驱动器光耦合器,6 引脚 DIP 随机相;
MOC3052SR2M
型号: MOC3052SR2M
厂家: ONSEMI    ONSEMI
描述:

三路驱动器光耦合器,6 引脚 DIP 随机相

驱动 光电 驱动器
文件: 总13页 (文件大小:420K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MOC3051M, MOC3052M,  
MOC3053M  
6-Pin DIP Random-Phase  
Triac Driver Optocoupler  
(600 Volt Peak)  
www.onsemi.com  
The MOC3051M, MOC3052M and MOC3053M consist of a GaAs  
infrared emitting diode optically coupled to a nonzerocrossing  
silicon bilateral AC switch (triac). These devices isolate low voltage  
logic from 115 V and 240 V lines to provide random phase  
AC  
AC  
control of high current triacs or thyristors. These devices feature  
greatly enhanced static dv/dt capability to ensure stable switching  
performance of inductive loads.  
PDIP6  
CASE 646BY  
Features  
Excellent I Stability—IR Emitting Diode Has Low Degradation  
FT  
600 V Peak Blocking Voltage  
Safety and Regulatory Approvals  
UL1577, 4,170 VAC  
for 1 Minute  
RMS  
DIN EN/IEC6074755  
Typical Applications  
Solenoid/Valve Controls  
Lamp Ballasts  
PDIP6  
CASE 646BZ  
PDIP6  
CASE 646BX  
Static AC Power Switch  
MARKING DIAGRAM  
Interfacing Microprocessors to 115 V and 240 V Peripherals  
Solid State Relay  
AC  
AC  
Incandescent Lamp Dimmers  
Temperature Controls  
Motor Controls  
MOC3051  
V X YY Q  
ON  
MOC3051  
= ON Semiconductor Logo  
= Device Code  
V
X
YY  
Q
= DIN EN/IEC6074755 Option  
= OneDigit Year Code  
= TwoDigit Work Week,  
= Assembly Package Code  
PIN CONNECTIONS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2019 Rev. 3  
MOC3052M/D  
MOC3051M, MOC3052M, MOC3053M  
SAFETY AND INSULATIONS RATINGS  
As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with  
the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
Installation Classifications per DIN VDE 0110/1.89 Table 1,  
For Rated Mains Voltage  
< 150 V  
< 300 V  
I–IV  
I–IV  
RMS  
RMS  
Climatic Classification  
40/85/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
InputtoOutput Test Voltage, Method A, V  
Value  
Unit  
V
PR  
x 1.6 = V , Type and  
1360  
Vpeak  
IORM  
PR  
Sample Test with t = 10 s, Partial Discharge < 5 pC  
m
InputtoOutput Test Voltage, Method B, V  
x 1.875 = V  
,
1594  
Vpeak  
IORM  
PR  
100% Production Test with t = 1 s, Partial Discharge < 5 pC  
m
V
Maximum Working Insulation Voltage  
Highest Allowable OverVoltage  
External Creepage  
850  
6000  
7  
Vpeak  
Vpeak  
mm  
IORM  
V
IOTM  
External Clearance  
7  
mm  
External Clearance (for Option TV, 0.4” Lead Spacing)  
Distance Through Insulation (Insulation Thickness)  
10  
0.5  
mm  
DTI  
mm  
9
R
Insulation Resistance at T , V = 500 V  
> 10  
W
IO  
S
IO  
www.onsemi.com  
2
MOC3051M, MOC3052M, MOC3053M  
MAXIMUM RATINGS T = 25°C unless otherwise specified.  
A
Symbol  
Parameter  
Value  
Unit  
TOTAL DEVICE  
T
Storage Temperature  
40 to +150  
40 to +85  
40 to +100  
260 for 10 seconds  
330  
°C  
°C  
STG  
OPR  
T
Operating Temperature  
Junction Temperature Range  
Lead Solder Temperature  
T
J
°C  
T
°C  
SOL  
P
Total Device Power Dissipation at 25°C Ambient  
Derate Above 25°C  
mW  
mW/°C  
D
4.4  
EMITTER  
I
Continuous Forward Current  
Reverse Voltage  
60  
3
mA  
V
F
V
P
R
Total Power Dissipation at 25°C Ambient  
Derate Above 25°C  
100  
1.33  
mW  
D
mW/°C  
DETECTOR  
V
OffState Output Terminal Voltage  
600  
1
V
A
DRM  
TSM  
I
Peak NonRepetitive Surge Current (Single Cycle 60 Hz Sine Wave)  
Total Power Dissipation at 25°C Ambient  
Derate Above 25°C  
P
300  
4
mW  
mW/°C  
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Symbol  
Parameters  
Characteristic  
Min  
Typ  
Max  
Unit  
EMITTER  
V
Input Forward Voltage  
I = 10 mA  
1.18  
0.05  
1.50  
100  
V
F
F
I
R
Reverse Leakage Current  
V = 3 V  
R
mA  
DETECTOR  
I
Peak Blocking Current, Either Direction  
Peak OnState Voltage, Either Direction  
Critical Rate of Rise of OffState Voltage  
V
= 600 V, I = 0  
10  
100  
2.5  
nA  
V
DRM  
DRM  
F
(Note 1)  
V
I
F
= 100 mA peak,  
2.2  
TM  
TM  
I = 0  
dv/dt  
I = 0, V  
F
= 600 V  
1000  
V/ms  
DRM  
TRANSFER CHARACTERISTICS  
Symbol  
DC Characteristic  
Test Conditions  
Device  
MOC3051M  
Min  
Typ  
Max  
15  
10  
6
Unit  
I
FT  
LED Trigger Current,  
Either Direction  
Main Terminal  
Voltage = 3 V (Note 2)  
mA  
MOC3052M  
MOC3053M  
All  
I
H
Holding Current,  
Either Direction  
540  
mA  
www.onsemi.com  
3
MOC3051M, MOC3052M, MOC3053M  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)  
A
INDIVIDUAL COMPONENT CHARACTERISTICS  
Symbol  
Characteristic  
Test Conditions  
Min  
Typ  
Max  
Unit  
ISOLATION CHARACTERISTICS  
V
ISO  
R
ISO  
C
ISO  
InputOutput Isolation Voltage (Note 3)  
Isolation Resistance  
f = 60 Hz, t = 1 Minute  
4170  
VAC  
RMS  
11  
V
IO  
= 500 V  
10  
W
DC  
Isolation Capacitance  
V = 0 V, f = 1 MHz  
0.2  
pF  
1. Test voltage must be applied within dv/dt rating.  
2. All devices will trigger at an I value greater than or equal to the maximum I specification. For optimum operation over temperature and  
F
FT  
lifetime of the device, the LED should be biased with an I that is at least 50% higher than the maximum I specification. The I should not  
F
FT  
F
exceed the absolute maximum rating of 60 mA.  
Example: For MOC3052M, the minimum I bias should be 10 mA x 150% = 15 mA.  
F
3. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are  
ISO  
common.  
www.onsemi.com  
4
 
MOC3051M, MOC3052M, MOC3053M  
TYPICAL CHARACTERISTICS  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
400  
300  
200  
100  
0
T
= 40°C  
= 25°C  
A
100  
200  
300  
400  
T
A
T
= 85°C  
A
1
10  
100  
3  
2  
1  
0
1
2
3
I
F
LED FORWARD CURRENT (mA)  
V
TM  
ONSTATE VOLTAGE (V)  
Figure 1. LED Forward Voltage vs. Forward Current  
Figure 2. OnState Characteristics  
1.4  
15  
10  
5
NORMALIZED TO T = 25°C  
NORMALIZED TO PW = 100 μs  
A
1.2  
1.0  
0.8  
0.6  
0
40  
20  
0
20  
40  
60  
80  
100  
1
10  
100  
PW LED TRIGGER PULSE WIDTH (ms)  
T
A
AMBIENT TEMPERATURE (°C)  
Figure 3. LED Trigger Current vs. Ambient  
Temperature  
Figure 4. LED Trigger Current vs. LED Pulse Width  
4
3
2
1
0
10000  
V
DRM  
= 600 V  
NORMALIZED TO T = 25°C  
A
1000  
100  
10  
1
0.1  
40  
20  
0
20  
40  
60  
80  
100  
40  
20  
0
20  
40  
60  
80  
100  
T , AMBIENT TEMPERATURE (°C)  
A
T , AMBIENT TEMPERATURE (°C)  
A
Figure 5. Holding Current vs. Ambient  
Temperature  
Figure 6. Leakage Current vs. Ambient  
Temperature  
www.onsemi.com  
5
 
MOC3051M, MOC3052M, MOC3053M  
APPLICATIONS INFORMATION  
Basic Triac Driver Circuit  
LED Trigger Current vs. Pulse Width  
The random phase triac drivers MOC3051M,  
MOC3052M and MOC3053M can allow snubberless  
operations in applications where load is resistive and the  
external generated noise in the AC line is below its  
guaranteed dv/dt withstand capability. For these  
applications, a snubber circuit is not necessary when a noise  
insensitive power triac is used. Figure 7 shows the circuit  
diagram. The triac driver is directly connected to the triac  
main terminal 2 and a series resistor R which limits the  
current to the triac driver. Current limiting resistor R must  
have a minimum value which restricts the current into the  
driver to maximum 1 A.  
Random phase triac drivers are designed to be phase  
controllable. They may be triggered at any phase angle  
within the AC sine wave. Phase control may be  
accomplished by an AC line zero cross detector and a  
variable pulse delay generator which is synchronized to the  
zero cross detector. The same task can be accomplished by  
a microprocessor which is synchronized to the AC zero  
crossing. The phase controlled trigger current may be a very  
short pulse which saves energy delivered to the input LED.  
LED trigger pulse currents shorter than 100 ms must have  
increased amplitude as shown on Figure 4. This graph shows  
the dependency of the trigger current I versus the pulse  
FT  
The power dissipation of this current limiting resistor and  
the triac driver is very small because the power triac carries  
the load current as soon as the current through driver and  
current limiting resistor reaches the trigger current of the  
power triac. The switching transition times for the driver is  
only one micro second and for power triacs typical four  
micro seconds.  
width. I in this graph is normalized in respect to the  
FT  
minimum specified I  
for static condition, which is  
FT  
specified in the device characteristic. The normalized I  
FT  
has to be multiplied with the devices guaranteed static  
trigger current.  
Example:  
I
= 10 mA, Trigger PW = 4 ms  
FT  
I (pulsed) = 10 mA × 3 = 30 mA  
F
Triac Driver Circuit for Noisy Environments  
When the transient rate of rise and amplitude are expected  
to exceed the power triacs and triac drivers maximum  
ratings a snubber circuit as shown in Figure 8 is  
recommended. Fast transients are slowed by the RC  
snubber and excessive amplitudes are clipped by the Metal  
Oxide Varistor MOV.  
Minimum LED Off Time in Phase Control Applications  
In phase control applications, one intends to be able to  
control each AC sine half wave from 0° to 180°. Turn on at  
0° means full power and turn on at 180° means zero power.  
This is not quite possible in reality because triac driver and  
triac have a fixed turn on time when activated at zero  
degrees. At a phase control angle close to 180° the driver’s  
turn on pulse at the trailing edge of the AC sine wave must  
be limited to end 200 ms before AC zero cross as shown in  
Figure10. This assures that the triac driver has time to switch  
off. Shorter times may cause loss of control at the following  
half cycle.  
Triac Driver Circuit for Extremely Noisy Environments  
As specified in the noise standards IEEE472 and  
IEC2554.  
Industrial control applications do specify a maximum  
transient noise dv/dt and peak voltage which is  
superimposed onto the AC line voltage. In order to pass this  
environment noise test a modified snubber network as  
shown in Figure 9 is recommended.  
Static dv/dt  
Critical rate of rise of offstate voltage or static dv/dt is a  
triac characteristic that rates its ability to prevent false  
triggering in the event of fast rising line voltage transients  
when it is in the offstate. When driving a discrete power  
triac, the triac driver optocoupler switches back to offstate  
once the power triac is triggered. However, during the  
commutation of the power triac in application where the  
load is inductive, both triacs are subjected to fast rising  
voltages. The static dv/dt rating of the triac driver  
optocoupler and the commutating dv/dt rating of the power  
triac must be taken into consideration in snubber circuit  
design to prevent false triggering and commutation failure.  
LED Trigger Current versus Temperature  
Recommended operating LED control current I lies  
F
between the guaranteed I and absolute maximum I .  
FT  
F
Figure 3 shows the increase of the trigger current when the  
device is expected to operate at an ambient temperature  
below 25°C. Multiply the datasheet guaranteed I with the  
FT  
normalized I shown on this graph and an allowance for  
FT  
LED degradation over time.  
Example:  
I
= 10 mA, LED degradation factor = 20%  
FT  
I at 40°C = 10 mA × 1.25 × 120% = 15 mA  
F
www.onsemi.com  
6
MOC3051M, MOC3052M, MOC3053M  
TRIAC DRIVER  
V
CC  
R
R
POWER TRIAC  
LED  
AC LINE  
CONTROL  
RET.  
Q
LOAD  
R
= (V V LED V  
Q) / I  
SAT FT  
LED  
CC  
F
R = V AC / I  
P
TSM  
Figure 7. Basic Driver Circuit  
TRIAC DRIVER  
V
CC  
R
R
POWER TRIAC  
LED  
R
S
AC LINE  
MOV  
C
S
CONTROL  
RET.  
LOAD  
Typical Snubber values R = 33 W, C = 0.01 mF  
S
S
MOV (Metal Oxide Varistor) protects power triac and  
driver from transient overvoltages > V max  
DRM  
Figure 8. Triac Driver Circuit for Noisy Environments  
POWER TRIAC  
TRIAC DRIVER  
V
CC  
R
R
LED  
R
MOV  
S
AC LINE  
C
CONTROL  
RET.  
S
LOAD  
Recommended snubber to pass IEEE472 and IEC2554 noise tests  
= 47 W, C = 0.01 mF  
R
S
S
Figure 9. Triac Driver Circuit for Extremely Noisy Environments  
AC Line  
0°  
180°  
LED PW  
LED Current  
LED turn off min. 200 ms  
Figure 10. Minimum Time for LED Turn Off to Zero Crossing  
www.onsemi.com  
7
MOC3051M, MOC3052M, MOC3053M  
REFLOW PROFILE  
Figure 11. Reflow Profile  
Profile Feature  
PbFree Assembly Profile  
150°C  
Temperature Minimum (Tsmin)  
Temperature Maximum (Tsmax)  
200°C  
Time (t ) from (Tsmin to Tsmax)  
60 seconds to 120 seconds  
3°C/second maximum  
217°C  
S
Rampup Rate (T to T )  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60 seconds to 150 seconds  
260°C +0°C / –5°C  
30 seconds  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
P
Rampdown Rate (T to T )  
6°C/second maximum  
8 minutes maximum  
P
L
Time 25°C to Peak Temperature  
www.onsemi.com  
8
MOC3051M, MOC3052M, MOC3053M  
ORDERING INFORMATION (Note 4)  
Device  
Package  
Shipping  
MOC3051M  
DIP 6Pin  
Tube (50 Units)  
Tube (50 Units)  
MOC3051SM  
SMT 6Pin (Lead Bend)  
SMT 6Pin (Lead Bend)  
DIP 6Pin, DIN EN/IEC6074755 Option  
MOC3051SR2M  
MOC3051VM  
Tape and Reel (1000 Units)  
Tube (50 Units)  
MOC3051SVM  
SMT 6Pin (Lead Bend),  
DIN EN/IEC6074755 Option  
Tube (50 Units)  
MOC3051SR2VM  
MOC3051TVM  
SMT 6Pin (Lead Bend),  
Tape and Reel (1000 Units)  
Tube (50 Units)  
DIN EN/IEC6074755 Option  
DIP 6Pin, 0.4” Lead Spacing,  
DIN EN/IEC6074755 Option  
4. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families.  
www.onsemi.com  
9
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP6 8.51x6.35, 2.54P  
CASE 646BX  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13449G  
PDIP6 8.51X6.35, 2.54P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP6 8.51x6.35, 2.54P  
CASE 646BY  
ISSUE A  
DATE 15 JUL 2019  
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13450G  
PDIP6 8.51x6.35, 2.54P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP6 8.51x6.35, 2.54P  
CASE 646BZ  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13451G  
PDIP6 8.51X6.35, 2.54P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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SI9137DB

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SI9137LG

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SI9122E

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VISHAY