MOCD223VM [ONSEMI]

8 引脚 SOIC 达灵顿输出光耦合器;


型号：	MOCD223VM
厂家：	ONSEMI
描述：	8 引脚 SOIC 达灵顿输出光耦合器输出元件光电
文件：	总9页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

8-pin SOIC Darlington

Output Optocouplers

MOC223M, MOCD223M

Description

SOIC8

CASE 751DZ

The MOC223M consists of a gallium arsenide infrared emitting

diode optically coupled to a monolithic silicon photodarlington

detector, in a surface mountable, small outline, plastic package.

The MOCD223M is a dual−channel version of the MOC223M. They

are ideally suited for high density applications, and eliminates the need

for through the board mounting.

MARKING DIAGRAMS

Features

$Y 223

VXYYS

$Y D223

VXYYS

 High Current Transfer Ratio of 500% Minimum at I = 1 mA

 Minimum BV

 Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050 Lead Spacing

of 30 V Guaranteed

CEO

(MOC223M)

(MOCD223M)

 Safety and Regulatory Approvals:

 UL2688, 2,500 VAC

for 1 Minute

RMS

223/D223

= onsemi Logo

 DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

= Specific Device Code

= DIN EN/IEC60747−5−5 Option

= One−Digit Year Code

= Digit Work Week

 These Devices are Pb−Free and Halogen Free

Applications

 Low Power Logic Circuits

= Assembly Package Code

 Interfacing and Coupling Systems of Different Potentials and

Impedances

 Telecommunications Equipment

 Portable Electronics

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

 Solid State Relays

 Semiconductor Components Industries, LLC, 2006

Publication Order Number:

November, 2022 − Rev. 6

MOCD223M/D

MOC223M, MOCD223M

SCHEMATICS

Anode

Cathode

N/C

LED 1 Anode

LED 1 Cathode

LED 2 Anode

N/C

8 Collector 1

Emitter 1

Base

Collector 2

Collector

Emitter

N/C

LED 2 Cathode

Emitter 2

Figure 1. Schematic − MOC223M

Figure 2. Schematic − MOCD223M

SAFETY AND INSULATION RATINGS

Parameter

Characteristics

Installation Classifications per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

I–IV

I–III

RMS

< 300 V

Climatic Classification

55/100/21

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

175

Symbol

Parameter

Input−to−Output Test Voltage, Method A, V

Value

Unit

x 1.6 = V

904

peak

IORM

Type and Sample Test with t = 10 s, Partial Discharge < 5 pC

Input−to−Output Test Voltage, Method B, V

x 1.875 = V

1060

IORM

100% Production Test with t = 1 s, Partial Discharge < 5 pC

Maximum Working Insulation Voltage

Highest Allowable Over−Voltage

External Creepage

565

4000

 4

IORM

IOTM

External Clearance

 4

DTI

Distance Through Insulation (Insulation Thickness)

Case Temperature (Note 1)

Input Current (Note 1)

 0.4

150

200

300

C

S,INPUT

Output Power (Note 1)

S,OUTPUT

Insulation Resistance at T , V = 500 V (Note 1)

> 10

As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the

safety ratings shall be ensured by means of protective circuits.

1. Safety limit values − maximum values allowed in the event of a failure.

www.onsemi.com

MOC223M, MOCD223M

ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise specified.

Symbol

Parameter

Value

Unit

TOTAL DEVICE

Storage Temperature

−40 to +125

−40 to +100

−40 to +125

260 for 10 s

240

C

STG

Ambient Operating Temperature

Junction Temperature

Lead Solder Temperature

SOL

Total Device Power Dissipation @ T = 25C

Derate Above 25C

2.94

mW/C

EMITTER

Continuous Forward Current

Forward Current − Peak (PW = 100 ms, 120 pps)

Reverse Voltage

1.0

6.0

I (pk)

LED Power Dissipation @ T = 25C

mW/C

Derate Above 25C

0.8

DETECTOR

Continuous Collector Current

Collector−Emitter Voltage

150

CEO

CBO

ECO

Collector−Base Voltage, MOC223M

Emitter−Collector Voltage

Detector Power Dissipation @ T = 25C

150

1.76

Derate Above 25C

mW/C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

EMMITER

Input Forward Voltage

Reverse Leakage Current

Input Capacitance

= 1.0 mA

−

1.08

0.001

1.3

100

−

= 6.0 V

DETECTOR

Collector−Emitter Dark Current

= 5.0 V, T = 25C

−

1.0

100

120

−

CEO1

CEO2

= 5.0 V, T = 100C

Collector−Emitter Breakdown Voltage

Collector−Base Breakdown Voltage

Emitter−Collector Breakdown Voltage

Collector−Emitter Capacitance

= 100 mA

−

CEO

CBO

ECO

−

f = 1.0 MHz, V = 0

−

5.5

−

COUPLED

CTR

Current Transfer Ratio

Collector−Emitter Saturation Voltage

Turn−On Time

= 1.0 mA, V = 5.0 V

500

−

1000

−

1.0

−

= 500 mA, I = 1.0 mA

CE(sat)

off

= 5.0 mA, V = 10 V,

−

R = 100 W (Figure 8)

Turn−Off Time

−

Rise Time

−

Fall Time

−

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MOC223M, MOCD223M

ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified. (continued)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISOLATION CHARACTERISTICS

ISO

Input−Output Isolation Voltage

Isolation Capacitance

t = 1 min

2500

−

0.2

−

VAC

RMS

I−O

= 0, f = 1 MHz

−

Isolation Resistance

= 500 V , T = 25C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL PERFORMANCE CURVES

1.8

1.7

1.6

1.5

1.4

1.3

= 55C

1.2

1.1

1.0

= 25C

= 5 V

= 100C

Normalized to I = 1 mA

0.1

LED Forward Current (mA)

100

LED Input Current (mA)

Figure 3. LED Forward Voltage vs. Forward Current

Figure 4. Output Current vs. Input Current

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.1

0.6

0.4

0.2

= 1 mA

= 1 mA, V = 5 V

Normalized to V = 5 V

Normalized to T = 25C

0.01

−80 −60 −40 −20

40 60

80 100 120

CE,

Collector−Emitter Voltage (V)

Ambient Temperature (5C)

Figure 5. LED Forward Voltage vs. Forward

Current

Figure 6. Output Current vs. Collector−Emitter

Voltage

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MOC223M, MOCD223M

TYPICAL PERFORMANCE CURVES

−1

= 10 V

Normalized to T = 25C

−2

100

Ambient Temperature (5C)

Figure 7. Dark Current vs. Ambient Temperature

= 10 V

Input Pulse

10%

90%

Input

Output

Output Pulse

ton

toff

Test Circuit

Waveforms

Figure 8. Switching Time Test Circuit and Waveforms

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MOC223M, MOCD223M

REFLOW PROFILE

260

Max. Ramp−up Rate = 3C/s

Max. Ramp−down Rate = 6C/s

240

220

200

Tsmax

180

160

140

120

Preheat Area

Tsmin

100

120

240

360

Time 25C to Peak

Time (s)

Figure 9. Reflow Profile

REFLOW PROFILE

Profile Feature

Pb−Free Assembly Profile

150C

Temperature Min. (Tsmin)

Temperature Max. (Tsmax)

200C

Time (t ) from (Tsmin to Tsmax)

60−120 s

Ramp−up Rate (t to t )

3°C/s max.

217C

Liquidous Temperature (T )

Time (t ) Maintained Above (T )

60−150 s

Peak Body Package Temperature

Time (t ) within 5C of 260C

260C +0C / −5C

30 s

Ramp−down Rate (T to T )

6C/s max.

8 min max.

Time 25C to Peak Temperature

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MOC223M, MOCD223M

ORDERING INFORMATION

Part Number

†

Package

Shipping

MOC223M

Small Outline 8−Pin

100 Units / Tube

2500 Units / Tape and Reel

100 Units / Tube

MOC223R2M

Small Outline 8−Pin

MOC223VM

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

Small Outline 8−Pin

MOC223R2VM

MOCD223M

2500 Units / Tape and Reel

100 Units / Tube

MOCD223R2M

MOCD223VM

Small Outline 8−Pin

2500 Units / Tape and Reel

100 Units / Tube

Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option

MOCD223R2VM

2500 Units / Tape and Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOIC8

CASE 751DZ

ISSUE O

DATE 30 SEP 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13733G

SOIC8

PAGE 1 OF 1

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For additional information, please contact your local Sales Representative at

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

MOCD223VM [ONSEMI]

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