MPS2222ARLRP [ONSEMI]
General Purpose Transistors(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | MPS2222ARLRP |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(NPN Silicon) |
| 文件： | 总8页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPS2222, MPS2222A
MPS2222A is a Preferred Device
General Purpose
Transistors
NPN Silicon
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
Collector–Emitter Voltage
V
CEO
Vdc
BASE
MPS2222
MPS2222A
30
40
1
Collector–Base Voltage
Emitter–Base Voltage
V
Vdc
Vdc
CBO
EBO
EMITTER
MPS2222
MPS2222A
60
75
TO–92
CASE 29
STYLE 1
V
MPS2222
MPS2222A
5.0
6.0
1
2
Collector Current – Continuous
Total Device Dissipation
I
C
600
mAdc
3
MARKING DIAGRAMS
P
D
@ T = 25°C
625
5.0
mW
mW/°C
A
MPS
2222
YWW
MPS2
222A
YWW
Derate above 25°C
Total Device Dissipation
P
D
@ T = 25°C
1.5
12
Watts
mW/°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
–55 to
+150
°C
J
stg
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
200
°C/W
θJA
ORDERING INFORMATION
Thermal Resistance,
Junction to Case
R
83.3
°C/W
θJC
Device
MPS2222
Package
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
MPS2222A
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
MPS2222ARLRA
MPS2222ARLRM
MPS2222ARLRP
MPS2222RLRA
MPS2222RLRM
MPS2222RLRP
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2001 – Rev. 1
MPS2222/D
MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
MPS2222
MPS2222A
V
V
30
40
–
–
Vdc
Vdc
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MPS2222
MPS2222A
60
75
–
–
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MPS2222
MPS2222A
V
5.0
6.0
–
–
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 60 Vdc, V
I
–
10
nAdc
µAdc
CEX
CBO
= 3.0 Vdc)
EB(off)
MPS2222A
CE
Collector Cutoff Current
I
(V
CB
(V
CB
(V
CB
(V
CB
= 50 Vdc, I = 0)
MPS2222
MPS2222A
MPS2222
–
–
–
–
0.01
0.01
10
E
= 60 Vdc, I = 0)
E
= 50 Vdc, I = 0, T = 125°C)
E
A
A
= 50 Vdc, I = 0, T = 125°C)
MPS2222A
10
E
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
I
–
100
20
nAdc
nAdc
EBO
MPS2222A
MPS2222A
EB
Base Cutoff Current
(V = 60 Vdc, V
C
I
–
BL
= 3.0 Vdc)
EB(off)
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
–
(I = 0.1 mAdc, V
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
35
50
75
35
100
50
30
40
–
–
–
–
300
–
C
CE
CE
CE
CE
(I = 1.0 mAdc, V
C
(I = 10 mAdc, V
C
(I = 10 mAdc, V
= 10 Vdc, T = –55°C)
MPS2222A only
C
A
(I = 150 mAdc, V
= 10 Vdc) (Note 1.)
= 1.0 Vdc) (Note 1.)
= 10 Vdc) (Note 1.)
C
CE
CE
CE
(I = 150 mAdc, V
C
(I = 500 mAdc, V
MPS2222
MPS2222A
–
–
C
Collector–Emitter Saturation Voltage (Note 1.)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
MPS2222
MPS2222A
–
–
0.4
0.3
C
B
(I = 500 mAdc, I = 50 mAdc)
MPS2222
MPS2222A
–
–
1.6
1.0
C
B
Base–Emitter Saturation Voltage (Note 1.)
(I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
MPS2222
MPS2222A
–
0.6
1.3
1.2
C
B
(I = 500 mAdc, I = 50 mAdc)
MPS2222
MPS2222A
–
–
2.6
2.0
C
B
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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2
MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 2.)
Symbol
Min
Max
Unit
f
T
MHz
(I = 20 mAdc, V
= 20 Vdc, f = 100 MHz)
CE
MPS2222
MPS2222A
250
300
–
–
C
Output Capacitance (V
Input Capacitance
= 10 Vdc, I = 0, f = 1.0 MHz)
C
obo
–
8.0
pF
pF
CB
E
C
ibo
(V
EB
= 0.5 Vdc, I = 0, f = 1.0 MHz)
MPS2222
MPS2222A
–
–
30
25
C
Input Impedance
h
kΩ
ie
re
fe
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
MPS2222A
MPS2222A
2.0
0.25
8.0
1.25
C
CE
CE
(I = 10 mAdc, V
C
–4
X 10
Voltage Feedback Ratio
h
h
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
CE
= 10 Vdc, f = 1.0 kHz)
CE
MPS2222A
MPS2222A
–
–
8.0
4.0
C
(I = 10 mAdc, V
C
Small–Signal Current Gain
–
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
CE
= 10 Vdc, f = 1.0 kHz)
CE
MPS2222A
MPS2222A
50
75
300
375
C
(I = 10 mAdc, V
C
Output Admittance
h
oe
mmhos
(I = 1.0 mAdc, V
= 10 Vdc, f = 1.0 kHz)
CE
= 10 Vdc, f = 1.0 kHz)
CE
MPS2222A
MPS2222A
5.0
25
35
200
C
(I = 10 mAdc, V
C
Collector Base Time Constant
rb′C
–
150
4.0
ps
c
(I = 20 mAdc, V
E
= 20 Vdc, f = 31.8 MHz)
MPS2222A
MPS2222A
CB
Noise Figure
NF
–
dB
(I = 100 mAdc, V
C CE
= 10 Vdc, R = 1.0 kΩ, f = 1.0 kHz)
S
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
t
t
–
–
–
–
10
25
ns
ns
ns
ns
d
(V
CC
C
= 30 Vdc, V
= –0.5 Vdc,
BE(off)
I
= 150 mAdc, I = 15 mAdc) (Figure 1)
B1
Rise Time
Storage Time
Fall Time
t
r
225
60
s
(V
CC
= 30 Vdc, I = 150 mAdc,
C
I = I = 15 mAdc) (Figure 2)
B1 B2
t
f
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ā30 V
200
+ā30 V
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
200
+16 V
+16 V
0
0
1 k
1N914
-14 V
1 kΩ
C * < 10 pF
S
-ā2 V
C * < 10 pF
S
< 20 ns
< 2 ns
-ā4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
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3
MPS2222, MPS2222A
1000
700
500
T
= 125°C
J
300
200
25°C
100
70
-55°C
50
30
20
V
CE
V
CE
= 1.0 V
= 10 V
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T
= 25°C
J
I
C
= 1.0 mA
0.6
0.4
0.2
0
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
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4
MPS2222, MPS2222A
200
100
500
V
= 30 V
I /I = 10
C B
CC
I /I = 10
300
T
= 25°C
C B
I = I
J
t′ = t - 1/8 t
200
s
s
f
B1 B2
= 25°C
70
50
t @ V = 30 V
CC
r
T
J
t
d
d
@ V
@ V
= 2.0 V
= 0
EB(off)
EB(off)
100
70
t
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
10
10
R
S
R
S
R
S
= OPTIMUM
f = 1.0 kHz
= 50 µA
= SOURCE
= RESISTANCE
I
= 1.0 mA, R = 150 Ω
S
C
8.0
8.0
500 µA, R = 200 Ω
I
C
S
100 µA, R = 2.0 kΩ
100 µA
500 µA
1.0 mA
S
50 µA, R = 4.0 kΩ
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
= 20 V
CE
= 25°C
20
T
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
30
I , COLLECTOR CURRENT (mA)
50 70 100
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current–Gain Bandwidth Product
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5
MPS2222, MPS2222A
1.0
0.8
+0.5
0
T
= 25°C
J
R
qVC
for V
CE(sat)
V
@ I /I = 10
C B
BE(sat)
-ā0.5
1.0 V
0.6
0.4
0.2
0
-ā1.0
-ā1.5
V
@ V = 10 V
CE
BE(on)
R
for V
BE
-ā2.0
-ā2.5
qVB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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6
MPS2222, MPS2222A
PACKAGE DIMENSIONS
TO–92
TO–226AA
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 1:
PIN 1. EMITTER
2. BASE
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3. COLLECTOR
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7
MPS2222, MPS2222A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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