MUR180EG [ONSEMI]
SWITCHMODE Power Rectifiers; 开关模式电源整流器
| 型号： | MUR180EG |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总6页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
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These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
ULTRAFAST RECTIFIERS
1.0 AMPERES, 800−1000 VOLTS
Features
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
PLASTIC
AXIAL LEAD
CASE 59
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in Plastic Bags; 1,000 per Bag
• Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
MARKING DIAGRAM
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
A
Rating
Symbol
Value
Unit
MUR1x0E
YYWW G
G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
MUR180E
800
R
MUR1100E
1000
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
I
1.0 @
T = 95°C
A
A
A
F(AV)
A
= Assembly Location
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
35
MUR1x0E = Device Code
x 8 or 10
Y
FSM
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Operating Junction Temperature and Storage
Temperature Range
T , T
−65 to
+175
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 3
MUR180E/D
MUR180E, MUR1100E
THERMAL CHARACTERISTICS
Charateristics
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Ambient
R
q
JA
See Note 3
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 1.0 Amp, T = 150°C)
1.50
1.75
F
J
(i = 1.0 Amp, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2)
i
mA
ns
R
(Rated dc Voltage, T = 100°C)
600
10
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
t
rr
fr
(I = 1.0 Amp, di/dt = 50 Amp/ms)
100
75
F
(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)
F
R
REC
Maximum Forward Recovery Time
75
ns
(I = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)
F
Controlled Avalanche Energy (See Test Circuit in Figure 6)
W
AVAL
10
mJ
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
†
Package
Shipping
MUR180E
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
1000 Units / Bag
5000 / Tape & Reel
1000 Units / Bag
5000 / Tape & Reel
MUR180EG
MUR180ERL
MUR180ERLG
MUR1100E
MUR1100EG
MUR1100ERL
MUR1100ERLG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
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2
MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
1000
100
10
20
T = 175°C
J
10
7.0
5.0
100°C
25°C
1.0
3.0
2.0
T = 175°C
J
25°C
0.1
100°C
0.01
1.0
0.7
0.5
0
100 200 300 400 500 600 700 800 900 1000
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V is sufficiently below rated V .
0.3
0.2
R
R
5.0
4.0
3.0
2.0
0.1
0.07
0.05
RATED V
R
R
= 50°C/W
q
JA
0.03
0.02
dc
SQUARE WAVE
1.0
0
0.01
0.3 0.5
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
2.3
0
50
100
150
200
250
v INSTANTANEOUS VOLTAGE (VOLTS)
F,
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Typical Forward Voltage
Figure 3. Current Derating
(Mounting Method #3 Per Note 3)
20
10
5.0
10
5.0
I
PK
T = 25°C
J
(CAPACITIVEꢀLOAD)
+ 20
I
AV
4.0
3.0
2.0
dc
7.0
5.0
T = 175°C
J
SQUARE WAVE
1.0
0
3.0
2.0
0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
I
, AVERAGE FORWARD CURRENT (AMPS)
V , REVERSE VOLTAGE (VOLTS)
R
F(AV)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
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3
MUR180E, MUR1100E
+V
DD
I
L
40 mH COIL
BV
DUT
V
D
I
D
MERCURY
SWITCH
I
D
I
L
DUT
S
1
V
DD
t
0
t
1
t
2
t
Figure 6. Test Circuit
Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
voltage is low compared to the
DD
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
When S is closed at t the current in the inductor I ramps
1
0
L
up linearly; and energy is stored in the coil. At t the switch
stored in the coil during the time when S was closed,
1
1
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 V, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
BV
and the diode begins to conduct the full load current
DUT
which now starts to decay linearly through the diode, and
goes to zero at t .
2
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V power supply while the diode is in
DD
breakdown (from t to t ) minus any losses due to finite
1
2
CHANNEL 2:
I
EQUATION (1):
CH1 500V
CH2 50mV
A
20ms
953 V VERT
L
0.5 AMPS/DIV.
BV
DUT
2
1
W
[
LILPK ǒ Ǔ
AVAL
2
BV
–V
DUT DD
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
EQUATION (2):
2
LPK
1
2
W
[
LI
AVAL
TIME BASE:
20 ms/DIV.
1
ACQUISITIONS
SAVEREF SOURCE
217:33 HRS
STACK
CH1
CH2
REF
REF
Figure 8. Current−Voltage Waveforms
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4
MUR180E, MUR1100E
NOTE 3 — AMBIENT MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(R ) for the mountings shown is to be used as typical
qJA
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR R
IN STILL AIR
q
JA
Lead Length, L
Mounting
Method
1/8
52
67
1/4
65
80
50
1/2
72
87
Units
°C/W
°C/W
°C/W
1
2
3
R
q
JA
MOUNTING METHOD 1
L
L
MOUNTING METHOD 2
L
L
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8″
Board Ground Plane
P.C. Board with
1−1/2″ X 1−1/2″ Copper Surface
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5
MUR180E, MUR1100E
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.10
2.00
0.71
−−−
MAX
5.20
2.70
0.86
1.27
−−−
F
A
B
D
F
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
A
K
1.000
−−− 25.40
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
F
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
K
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MUR180E/D
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