MV2101 [ONSEMI]
Silicon Tuning Diodes; 硅调谐二极管
| 型号： | MV2101 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Tuning Diodes |
| 文件： | 总8页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
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These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
3
Cathode
1
Anode
SOT–23
TO–92
2
Cathode
1
Anode
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance – 10%
• Complete Typical Design Curves
MARKING
DIAGRAM
3
MAXIMUM RATINGS
1
Rating
Reverse Voltage
Symbol
Value
30
Unit
Vdc
XXX M
2
V
R
TO–236AB, SOT–23
CASE 318–08
STYLE 8
Forward Current
I
F
200
mAdc
XXX
M
= Device Code*
= Date Code
* See Table
Forward Power Dissipation
P
D
mW
mW/°C
@ T = 25°C
MMBV21xx
225
1.8
A
Derate above 25°C
@ T = 25°C
Derate above 25°C
MV21xx
LV22xx
280
2.8
A
XX
XXXX
YWW
Junction Temperature
Storage Temperature Range
T
+150
°C
°C
J
T
stg
–55 to +150
DEVICE MARKING
1
2
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
TO–226AC, TO–92
CASE 182
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
= Date Code
* See Table
STYLE 1
M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Preferred devices are recommended choices for future use
and best overall value.
Characteristic
Symbol Min Typ Max
Unit
Reverse Breakdown Voltage
V
Vdc
(BR)R
(I = 10 µAdc)
R
MMBV21xx, MV21xx
LV22xx
30
25
–
–
–
–
Reverse Voltage Leakage
Current
(V = 25 Vdc, T = 25°C)
I
R
–
–
0.1
µAdc
R
A
Diode Capacitance
Temperature Coefficient
TC
–
280
–
ppm/°C
C
(V = 4.0 Vdc, f = 1.0 MHz)
R
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2001 – Rev. 3
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
C , Diode Capacitance
Q, Figure of Merit
= 4.0 Vdc,
TR, Tuning Ratio
C /C
T
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
V
R
2 30
f = 50 MHz
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
MMBV2103LT1
6.1
9.0
6.8
10
15
22
27
33
7.5
11
450
400
400
350
300
200
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.9
2.9
2.9
3.0
3.0
3.2
3.2
3.2
3.2
3.2
3.2
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
13.5
19.8
24.3
29.7
16.5
24.2
29.7
36.3
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. C , DIODE CAPACITANCE
4. TC , DIODE CAPACITANCE TEMPERATURE
C
T
COEFFICIENT
(C = C + C ). C is measured at 1.0 MHz using a
T
C
J
T
TC is guaranteed by comparing C at V = 4.0 Vdc, f = 1.0
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
C
T
R
MHz, T = –65°C with C at V = 4.0 Vdc, f = 1.0 MHz, T
A
A
T
R
= +85°C in the following equation, which defines TC :
C
2. TR, TUNING RATIO
+ ŤC () 85°C) – C (–65°C)Ť·
TR is the ratio of C measured at 2.0 Vdc divided by C
measured at 30 Vdc.
6
T
T
T
T
10
C (25°C)
TC
C
85 ) 65
T
3. Q, FIGURE OF MERIT
Accuracy limited by measurement of C to ±0.1 pF.
T
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
2pfC
Q +
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length [ 1/16”.
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2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
T
= 25°C
f = 1.0 MHz
A
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.5
20
30
0.1
0.2
0.3
1.0
2.0
3.0
5.0
10
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Diode Capacitance versus Reverse Voltage
100
1.040
1.030
1.020
50
V
R
= 2.0 Vdc
T
A
= 125°C
20
10
5.0
V
R
= 4.0 Vdc
1.010
1.000
0.990
0.980
0.970
0.960
T
= 75°C
= 25°C
A
2.0
1.0
V
= 30 Vdc
R
0.50
0.20
0.10
T
A
NORMALIZED TO C
at T = 25°C
T
A
= (CURVE)
0.05
V
R
0.02
0.01
0
5.0
10
15
20
25
30
-75
-50
-25
0
+25
+50
+75
+100 +125
V , REVERSE VOLTAGE (VOLTS)
R
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
5000
MMBV2101LT1/MV2101
MMBV2109LT1
3000
2000
3000
2000
1000
500
1000
MMBV2101LT1/MV2101
500
300
200
300
200
100
100
50
50
MMBV2109LT1/MV2109
30
20
30
20
T
= 25°C
f = 50 MHz
T
= 25°C
= 4.0 Vdc
A
A
V
R
10
1.0
10
10
10
V , REVERSE VOLTAGE (VOLTS)
20
30
20
30
50
70
100
200 250
2.0
3.0
5.0
7.0
f, FREQUENCY (MHz)
R
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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3
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
mined byT
of the die, R
, the maximum rated junction temperature
, the thermal resistance from the device
J(max)
θJA
junction to ambient, and the operating temperature, T .
A
Using the values provided on the data sheet for the SOT–23
package, P can be calculated as follows:
• Always preheat the device.
D
• The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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4
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6 STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
SOAK"
SOAK" ZONES 2 & 5
RAMP"
205° TO 219°C
PEAK AT
SOLDER JOINT
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 6. Typical Solder Heating Profile
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5
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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6
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
PACKAGE DIMENSIONS
TO–92 (TO–226AC)
CASE 182–06
ISSUE L
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
R
SEATING
PLANE
D
BEYOND DIMENSION K MINIMUM.
L
P
J
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
MAX
5.21
5.33
4.19
0.533
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.205
0.210
0.165
0.021
SECTION X–X
X X
0.050 BSC
0.100 BSC
0.014
0.500
0.250
0.080
---
1.27 BSC
2.54 BSC
0.36
D
G
0.016
---
---
0.105
0.050
---
0.41
---
---
2.66
1.27
---
---
K
L
12.70
6.35
2.03
---
2.93
3.43
H
N
P
R
V
V
STYLE 1:
C
0.115
0.135
PIN 1. ANODE
2. CATHODE
---
1
2
N
N
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7
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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MMBV2101LT1/D
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