N02L6181AB28I [ONSEMI]

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit; 2MB超低功耗异步SRAM CMOS 128Kx16位
N02L6181AB28I
型号: N02L6181AB28I
厂家: ONSEMI    ONSEMI
描述:

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
2MB超低功耗异步SRAM CMOS 128Kx16位

存储 内存集成电路 静态存储器
文件: 总11页 (文件大小:215K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N02L6181A  
2Mb Ultra-Low Power Asynchronous CMOS SRAM  
128Kx16 bit  
Features  
• Single Wide Power Supply Range  
1.65 to 2.2 Volts  
Overview  
• Very low standby current  
The N02L6181A is an integrated memory device  
containing a 2 Mbit Static Random Access Memory  
organized as 131,072 words by 16 bits. The device  
is designed and fabricated using ON  
0.5µA at 1.8V (Typical)  
• Very low operating current  
1.4mA at 1.8V and 1µs (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The base design is the same as ON  
• Very low Page Mode operating current  
0.5mA at 1.8V and 1µs (Typical)  
• Simple memory control  
Semiconductor’s N02L63W3A, which is processed  
to operate at higher voltages. The device operates  
with a single chip enable (CE) control and output  
enable (OE) to allow for easy memory expansion.  
Byte controls (UB and LB) allow the upper and  
lower bytes to be accessed independently. The  
N02L6181A is optimal for various applications  
where low-power is critical such as battery backup  
and hand-held devices. The device can operate  
Single Chip Enable (CE)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.2V  
• Very fast output enable access time  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package  
o
over a very wide temperature range of -40 C to  
o
+85 C and is available in JEDEC standard  
packages compatible with other standard 128Kb x  
16 SRAMs.  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Max  
Operating  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Max  
N02L6181AB  
N02L6181AB2  
48 - BGA  
70 and 85ns  
@ 1.65V  
-40oC to +85oC  
1.65V - 2.2V  
10 µA  
3 mA @ 1MHz  
Green 48-BGA  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 4  
Publication Order Number:  
N02L6181A/D  
N02L6181A  
Pin Configurations  
1
2
3
A0  
A3  
4
5
A2  
6
A1  
A4  
A6  
A7  
LB  
OE  
NC  
A
B
C
D
E
F
I/O8  
I/O0  
UB  
CE  
I/O9 I/O10 A5  
I/O1 I/O2  
I/O3 VCC  
VSS I/O11  
VCC I/O12  
NC  
NC  
A16 I/O4 VSS  
A15 I/O5 I/O6  
I/O14 I/O13 A14  
I/O15  
NC  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
48 Pin BGA (top)  
6 x 8 mm  
Pin Descriptions  
Pin Name  
A0-A16  
Pin Function  
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
Not Connected  
WE  
CE  
OE  
LB  
UB  
I/O0-I/O15  
NC  
VCC  
Power  
VSS  
Ground  
Rev. 4 | Page 2 of 11 | www.onsemi.com  
N02L6181A  
Functional Block Diagram  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A - A  
0
3
Input/  
Output  
Mux  
Page  
8K Page  
x 16 word  
x 16 bit  
Address  
Inputs  
Address  
Decode  
I/O - I/O  
0
7
A - A  
4
16  
and  
Logic  
RAM Array  
Buffers  
I/O - I/O  
8
15  
CE  
WE  
OE  
UB  
LB  
Control  
Logic  
Functional Description  
1
CE  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Standby2  
Write3  
H
L
L
L
L
X
X
L
X
X
X3  
X
H
L1  
L1  
L1  
X
H
L1  
L1  
L1  
High Z  
High Z  
Standby  
Standby  
Active  
Data In  
Data Out  
High Z  
H
H
L
Active  
Read  
Active  
H
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Rev. 4 | Page 3 of 11 | www.onsemi.com  
N02L6181A  
Absolute Maximum Ratings  
1
Item  
Symbol  
VIN,OUT  
VCC  
Rating  
–0.3 to VCC+0.3  
–0.3 to 3.0  
500  
Unit  
V
Voltage on any pin relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
V
PD  
mW  
oC  
oC  
oC  
TSTG  
Storage Temperature  
–40 to 125  
TA  
Operating Temperature  
-40 to +85  
240oC, 10sec(Lead only)  
TSOLDER  
Soldering Temperature and Time  
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Operating Characteristics (Over Specified Temperature Range)  
Typ1  
Item  
Symbol  
Test Conditions  
Min.  
Max  
Unit  
VCC  
VDR  
VIH  
VIL  
Supply Voltage  
Data Retention Voltage  
Input High Voltage  
1.65  
1.2  
1.8  
2.2  
2.2  
VCC+0.3  
0.3Vcc  
V
V
Chip Disabled2  
0.7Vcc  
–0.3  
V
Input Low Voltage  
V
VOH  
VOL  
ILI  
IOH = 0.2mA  
IOL = -0.2mA  
VCC–0.2  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
Output Leakage Current  
V
0.3  
0.5  
0.5  
V
VIN = 0 to VCC  
µA  
µA  
ILO  
OE = VIH or Chip Disabled  
VCC=2.2 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
ICC1  
ICC2  
1.4  
8.0  
3.0  
mA  
mA  
@ 1 µs Cycle Time2  
VCC=2.2 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
17.0  
@ 70 ns Cycle Time2  
Page Mode Operating Supply Current  
@ 70ns Cycle Time2 (Refer to Power  
Savings with Page Mode Operation  
diagram)  
VCC=2.2V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
ICC3  
2.0  
4.0  
0.1  
mA  
mA  
VCC=2.2V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0,  
f = 0  
Read/Write Quiescent Operating Sup-  
ply Current3  
ICC4  
VIN = VCC or 0V  
Maximum Standby Current3  
Chip Disabled  
ISB1  
0.5  
10.0  
5.0  
µA  
µA  
tA= 85oC, VCC = 2.2 V  
VCC = 1.2V, VIN = VCC or 0  
Chip Disabled, tA= 85oC  
Maximum Data Retention Current3  
IDR  
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.  
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive  
output capacitance expected in the actual system.  
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be  
within 0.2 volts of either VCC or VSS  
Rev. 4 | Page 4 of 11 | www.onsemi.com  
N02L6181A  
Power Savings with Page Mode Operation (WE = V )  
IH  
Page Address (A4 - A16 )  
Word Address (A0 - A3)  
CE  
Open page  
...  
Word 16  
Word 1  
Word 2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
Rev. 4 | Page 5 of 11 | www.onsemi.com  
N02L6181A  
Timing Test Conditions  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
1.65 - 2.2V  
Power Supply Voltage  
-40 to +85 oC  
Operating Temperature  
Timing  
85ns  
70ns  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
85  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
85  
85  
30  
85  
70  
70  
25  
70  
tCO  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Byte Select to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Byte Select to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Byte Select Disable to High-Z Output  
Output Hold from Address Change  
Write Cycle Time  
tOE  
tLB, tUB  
tLZ  
10  
5
10  
5
tOLZ  
tLBZ, tUBZ  
tHZ  
10  
10  
30  
30  
30  
25  
25  
25  
tOHZ  
tLBHZ, tUBHZ  
tOH  
5
5
tWC  
85  
50  
50  
50  
50  
0
70  
40  
40  
40  
40  
0
tCW  
Chip Enable to End of Write  
Address Valid to End of Write  
Byte Select to End of Write  
Write Pulse Width  
tAW  
tLBW, tUBW  
tWP  
tAS  
Address Setup Time  
tWR  
Write Recovery Time  
0
0
tWHZ  
tDW  
Write to High-Z Output  
25  
20  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
40  
0
40  
0
tDH  
tOW  
10  
10  
ns  
Rev. 4 | Page 6 of 11 | www.onsemi.com  
N02L6181A  
Timing of Read Cycle (CE = OE = V , WE = V )  
IL  
IH  
t
RC  
Address  
t
AA  
t
OH  
Previous Data Valid  
Data Valid  
Data Out  
Timing Waveform of Read Cycle (WE= V )  
IH  
t
RC  
Address  
t
AA  
t
HZ  
t
CO  
CE  
OE  
t
LZ  
t
OHZ  
t
OE  
t
OLZ  
t
t
LB, UB  
LB, UB  
t
t
t
t
LBLZ, UBLZ  
LBHZ, UBHZ  
High-Z  
Data Valid  
Data Out  
Rev. 4 | Page 7 of 11 | www.onsemi.com  
N02L6181A  
Timing Waveform of Write Cycle (WE control)  
t
WC  
Address  
t
WR  
t
AW  
t
CW  
CE  
t
, t  
LBW UBW  
LB, UB  
t
WP  
t
AS  
WE  
t
t
DH  
DW  
High-Z  
Data Valid  
Data In  
Data Out  
t
WHZ  
t
OW  
High-Z  
Timing Waveform of Write Cycle (CE Control)  
t
WC  
Address  
CE  
t
t
AW  
WR  
t
CW  
t
AS  
t
, t  
LBW UBW  
LB, UB  
WE  
t
WP  
t
t
DH  
DW  
Data Valid  
Data In  
t
LZ  
t
WHZ  
High-Z  
Data Out  
Rev. 4 | Page 8 of 11 | www.onsemi.com  
N02L6181A  
44-Lead TSOP II Package (T44)  
18.41±0.13  
11.76±0.20  
10.16±0.13  
0.80mm REF  
0.45  
0.30  
SEE DETAIL B  
DETAIL B  
1.10±0.15  
o
o
0 -8  
0.20  
0.00  
0.80mm REF  
Note:  
1. All dimensions in inches (Millimeters)  
2. Package dimensions exclude molding flash  
Rev. 4 | Page 9 of 11 | www.onsemi.com  
N02L6181A  
Ball Grid Array Package  
0.28±0.05  
1.24±0.10  
D
A1 BALL PAD  
CORNER (3)  
1. 0.35±0.05 DIA.  
E
2. SEATING PLANE - Z  
0.15  
Z
0.05  
Z
TOP VIEW  
SIDE VIEW  
1. DIMENSION IS MEASURED AT THE  
MAXIMUM SOLDER BALL DIAMETER.  
PARALLEL TO PRIMARY Z.  
A1 BALL PAD  
CORNER  
SD  
2. PRIMARY DATUM Z AND SEATING  
PLANE ARE DEFINED BY THE  
SPHERICAL CROWNS OF THE  
SOLDER BALLS.  
e
SE  
3. A1 BALL PAD CORNER I.D. TO BE  
MARKED BY INK.  
K TYP  
J TYP  
e
BOTTOM VIEW  
Dimensions (mm)  
e = 0.75  
BALL  
D
E
MATRIX  
TYPE  
SD  
SE  
J
K
6±0.10  
8±0.10  
0.375  
0.375  
1.125  
1.375  
FULL  
Rev. 4 | Page 10 of 11 | www.onsemi.com  
N02L6181A  
Ordering Information  
Part Number  
Package  
Shipping Method  
Speed  
N02L6181AB7I  
N02L6181AB27I  
N02L6181AB8I  
N02L6181AB28I  
N02L6181AB7IT  
N02L6181AB27IT  
N02L6181AB8IT  
N02L6181AB28IT  
Leaded 48-BGA  
Green 48-BGA (RoHS Compliant)  
Leaded 48-BGA  
Green 48-BGA (RoHS Compliant)  
Leaded 48-BGA  
Green 48-BGA (RoHS Compliant)  
Leaded 48-BGA  
Tray  
Tray  
Tray  
Tray  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
70ns  
70ns  
85ns  
85ns  
70ns  
70ns  
85ns  
85ns  
Green 48-BGA (RoHS Compliant)  
Revision History  
Revision #  
Date  
Change Description  
A
B
C
4
Apr. 2003  
Nov. 2005  
Initial Release  
Added TSOP II Green Pkg. , Green Pkg. Part # and RoHS Compliant  
September 2006 Converted to AMI Semiconductor  
July 2008  
Converted to ON Semiconductor and new part numbers  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does  
SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,  
consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as  
components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure  
of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or  
unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800-282-9855 Toll  
ON Semiconductor Website: www.onsemi.com  
Literature Distribution Center for ON Semiconductor  
PO Box 5163, Denver, Colorado 80217 USA  
Free USA/Canada  
Europe, Middle East & Africa Technical Support: Phone Order Literature: http://www.onsemi.com/orderlit  
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada 421-33-790-2910  
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan Customer Focus Center:  
For additional information, please contact your local  
Sales Representative  
Phone 81-3-5773-3850  
Rev. 4 | Page 11 of 11 | www.onsemi.com  

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