N04L63W1A [ONSEMI]

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit; 4Mb的超低功耗异步SRAM CMOS 256K 】 16位
N04L63W1A
型号: N04L63W1A
厂家: ONSEMI    ONSEMI
描述:

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb的超低功耗异步SRAM CMOS 256K 】 16位

静态存储器
文件: 总10页 (文件大小:192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
N04L63W1A  
4Mb Ultra-Low Power Asynchronous CMOS SRAM  
256K × 16 bit  
Overview  
Features  
The N04L63W1A is an integrated memory device  
containing a 4 Mbit Static Random Access Memory  
organized as 262,144 words by 16 bits. The device  
is designed and fabricated using ON  
• Single Wide Power Supply Range  
2.3 to 3.6 Volts  
• Very low standby current  
4.0µA at 3.0V (Typical)  
Semiconductor’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with a single chip  
enable (CE) control and output enable (OE) to  
allow for easy memory expansion. Byte controls  
(UB and LB) allow the upper and lower bytes to be  
accessed independently. The N04L63W1A is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Very low Page Mode operating current  
0.8mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Single Chip Enable (CE)  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.8V  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard packages compatible  
with other standard 256Kb x 16 SRAMs.  
• Very fast output enable access time  
25ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Compact space saving BGA package avail-  
able  
Product Family  
Standby  
Power  
Supply  
(Vcc)  
Operating  
Current (Icc),  
Typical  
Operating  
Speed  
Current (ISB),  
Part Number  
Package Type  
Temperature  
Options  
Typical  
N04L63W1AB  
N04L63W1AT  
N04L63W1AB2  
N04L63W1AT2  
48 - BGA  
44 - TSOP II  
70ns @ 2.7V  
55ns @ 2.7V  
-40oC to +85oC  
2.3V - 3.6V  
4 µA  
2 mA @ 1MHz  
48 - BGA Green  
44 - TSOP II Green  
Pin Configurations  
Pin Descriptions  
1
2
3
A0  
4
A1  
5
A2  
6
A4  
1
PIN  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A3  
2
ONE  
A6  
Pin Name  
A0-A17  
Pin Function  
A2  
3
LB  
OE  
NC  
A7  
A
B
C
D
E
F
A1  
4
OE  
A0  
5
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
Not Connected  
UB  
I/O8  
A3  
A4  
A6  
A7  
I/O0  
UB  
CE  
CE  
6
LB  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A16  
A15  
A14  
A13  
A12  
7
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VCC  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
WE  
CE  
OE  
LB  
UB  
I/O9 I/O10 A5  
VSS I/O11 A17  
I/O1 I/O2  
I/O3 VCC  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
VCC I/O12  
I/O14 I/O13 A14  
A16 I/O4 VSS  
A15 I/O5 I/O6  
NC  
I/O0-I/O15  
I/O15  
NC  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
A8  
NC  
VCC  
VSS  
A9  
A10  
A11  
Power  
Ground  
48 Pin BGA (top)  
6 x 8 mm  
A17  
©2008 SCILLC. All rights reserved.  
July 2008 - Rev. 13  
Publication Order Number:  
N04L63W1A/D  
N04L63W1A  
Functional Block Diagram  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A0 - A3  
Input/  
Output  
Mux  
Page  
16K Page  
x 16 word  
x 16 bit  
Address  
Inputs  
Address  
Decode  
Logic  
I/O0 - I/O7  
A4 - A17  
and  
RAM Array  
Buffers  
I/O8 - I/O15  
CE  
WE  
OE  
UB  
LB  
Control  
Logic  
Functional Description  
1
CE  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Standby2  
Write3  
H
L
L
L
L
X
X
L
X
X
X3  
X
H
L1  
L1  
L1  
X
H
L1  
L1  
L1  
High Z  
High Z  
Standby  
Standby  
Active  
Data In  
Data Out  
High Z  
H
H
L
Active  
Read  
Active  
H
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Rev. 13 | Page 2 of 10 | www.onsemi.com  
N04L63W1A  
1
Absolute Maximum Ratings  
Item  
Symbol  
VIN,OUT  
VCC  
Rating  
–0.3 to VCC+0.3  
–0.3 to 4.5  
500  
Unit  
V
Voltage on any pin relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
V
PD  
mW  
oC  
oC  
oC  
TSTG  
Storage Temperature  
–40 to 125  
TA  
Operating Temperature  
-40 to +85  
260oC, 10sec  
TSOLDER  
Soldering Temperature and Time  
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Operating Characteristics (Over Specified Temperature Range)  
Typ1  
Item  
Symbol  
Test Conditions  
Min.  
Max  
Unit  
VCC  
VDR  
VIH  
VIL  
Supply Voltage  
Data Retention Voltage  
Input High Voltage  
2.3  
1.8  
3.0  
3.6  
V
V
Chip Disabled2  
VCC+0.3  
0.6  
1.8  
V
Input Low Voltage  
–0.3  
V
VOH  
VOL  
ILI  
IOH = 0.2mA  
IOL = -0.2mA  
VCC–0.2  
Output High Voltage  
Output Low Voltage  
Input Leakage Current  
Output Leakage Current  
V
0.2  
0.5  
0.5  
V
VIN = 0 to VCC  
µA  
µA  
ILO  
OE = VIH or Chip Disabled  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
ICC1  
ICC2  
2.0  
10  
3.0  
mA  
mA  
@ 1 µs Cycle Time2  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
Read/Write Operating Supply Current  
16.0  
@ 70ns Cycle Time2  
Page Mode Operating Supply Current  
@ 70ns Cycle Time2 (Refer to Power  
Savings with Page Mode Operation  
diagram)  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0  
ICC3  
4
mA  
mA  
VCC=3.6 V, VIN=VIH or VIL  
Chip Enabled, IOUT = 0,  
f = 0  
Read/Write Quiescent Operating Sup-  
ply Current3  
ICC4  
3.0  
VIN = VCC or 0V  
Chip Disabled  
Maximum Standby Current3  
ISB1  
4.0  
20  
10  
µA  
µA  
tA= 85oC, VCC = 3.6 V  
VCC = 1.8V, VIN = VCC or 0  
Chip Disabled, tA= 85oC  
Maximum Data Retention Current3  
IDR  
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.  
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive  
output capacitance expected in the actual system.  
3. This device assumes a standby mode if the chip is disabled (CE high or UB and LB high). In order to achieve low standby current  
all inputs must be within 0.2 volts of either VCC or VSS  
Rev. 13 | Page 3 of 10 | www.onsemi.com  
N04L63W1A  
Power Savings with Page Mode Operation (WE = V )  
IH  
Page Address (A4 - A17 )  
Word Address (A0 - A3)  
CE  
Open page  
...  
Word 16  
Word 1  
Word 2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
Rev. 13 | Page 4 of 10 | www.onsemi.com  
N04L63W1A  
Timing Test Conditions  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
-40 to +85 oC  
Operating Temperature  
Timing  
-70  
-55  
Item  
Symbol  
2.3 - 2.65 V  
Min. Max.  
2.7 - 3.6 V  
Min. Max.  
2.7 - 3.6 V  
Units  
Min.  
Max.  
tRC  
tAA  
Read Cycle Time  
85  
70  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Enable to Valid Output  
85  
85  
30  
85  
70  
70  
25  
70  
55  
55  
25  
55  
tCO  
tOE  
Output Enable to Valid Output  
Byte Select to Valid Output  
tLB, tUB  
tLZ  
tOLZ  
tBZ  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Byte Select to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Byte Select Disable to High-Z Output  
Output Hold from Address Change  
10  
5
10  
5
10  
5
10  
0
10  
0
10  
0
tHZ  
20  
20  
20  
20  
20  
20  
20  
20  
20  
tOHZ  
tBHZ  
tOH  
0
0
0
0
0
0
10  
10  
10  
tWC  
tCW  
tAW  
tBW  
tWP  
tAS  
Write Cycle Time  
Chip Enable to End of Write  
Address Valid to End of Write  
Byte Select to End of Write  
Write Pulse Width  
85  
50  
50  
50  
40  
0
70  
50  
50  
50  
40  
0
55  
45  
45  
45  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
tWR  
tWHZ  
tDW  
tDH  
Write Recovery Time  
0
0
0
Write to High-Z Output  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
20  
20  
20  
40  
0
40  
0
40  
0
tOW  
5
5
5
ns  
Rev. 13 | Page 5 of 10 | www.onsemi.com  
N04L63W1A  
Timing of Read Cycle (CE = OE = V , WE = V )  
IL  
IH  
t
RC  
Address  
t
AA  
t
OH  
Previous Data Valid  
Data Valid  
Data Out  
Timing Waveform of Read Cycle (WE= V )  
IH  
t
RC  
Address  
t
AA  
t
HZ  
t
CO  
CE  
OE  
t
LZ  
t
OHZ  
t
OE  
t
OLZ  
t
t
LB, UB  
LB, UB  
t
t
BHZ  
BLZ  
High-Z  
Data Valid  
Data Out  
Rev. 13 | Page 6 of 10 | www.onsemi.com  
N04L63W1A  
Timing Waveform of Write Cycle (WE control)  
t
WC  
Address  
t
WR  
t
AW  
t
CW  
CE  
t
BW  
LB, UB  
t
WP  
t
AS  
WE  
t
t
DH  
DW  
High-Z  
Data Valid  
High-Z  
Data In  
Data Out  
t
WHZ  
t
OW  
Timing Waveform of Write Cycle (CE Control)  
t
WC  
Address  
CE  
t
t
AW  
WR  
t
CW  
t
AS  
t
BW  
LB, UB  
WE  
t
t
WP  
t
t
DH  
DW  
Data Valid  
Data In  
t
LZ  
WHZ  
High-Z  
Data Out  
Rev. 13 | Page 7 of 10 | www.onsemi.com  
N04L63W1A  
44-Lead TSOP II Package (T44)  
18.41±0.13  
11.76±0.20  
10.16±0.13  
0.80mm REF  
0.45  
0.30  
SEE DETAIL B  
DETAIL B  
1.10±0.15  
o
o
0 -8  
0.20  
0.00  
0.80mm REF  
Note:  
1. All dimensions in inches (Millimeters)  
2. Package dimensions exclude molding flash  
Rev. 13 | Page 8 of 10 | www.onsemi.com  
N04L63W1A  
Ball Grid Array Package  
0.28±0.05  
1.24±0.10  
D
A1 BALL PAD  
CORNER (3)  
1. 0.35±0.05 DIA.  
E
2. SEATING PLANE - Z  
0.15  
Z
0.05  
Z
TOP VIEW  
SIDE VIEW  
1. DIMENSION IS MEASURED AT THE  
MAXIMUM SOLDER BALL DIAMETER.  
PARALLEL TO PRIMARY Z.  
A1 BALL PAD  
CORNER  
SD  
2. PRIMARY DATUM Z AND SEATING  
PLANE ARE DEFINED BY THE  
SPHERICAL CROWNS OF THE  
SOLDER BALLS.  
e
SE  
3. A1 BALL PAD CORNER I.D. TO BE  
MARKED BY INK.  
K TYP  
J TYP  
e
BOTTOM VIEW  
Dimensions (mm)  
e = 0.75  
BALL  
D
E
MATRIX  
TYPE  
SD  
SE  
J
K
6±0.10  
8±0.10  
0.375  
0.375  
1.125  
1.375  
FULL  
Rev. 13 | Page 9 of 10 | www.onsemi.com  
N04L63W1A  
Ordering Information  
Part Number  
Package  
Shipping Method  
N04L63W1AT7I  
N04L63W1AT27I  
N04L63W1AB7I  
N04L63W1AB27I  
N04L63W1AT7IT  
N04L63W1AT27IT  
N04L63W1AB7IT  
N04L63W1AB27IT  
Leaded 44-TSOP II  
Green 44-TSOP II (RoHS Compliant)  
Leaded 48-BGA  
Green 48-BGA (RoHS Compliant)  
Leaded 44-TSOP II  
Green 44-TSOP II (RoHS Compliant)  
Leaded 48-BGA  
Tray  
Tray  
Tray  
Tray  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Green 48-BGA (RoHS Compliant)  
Please contact factory for 55ns speed grade  
Revision History  
Revision #  
Date  
Change Description  
A
B
C
D
Jan. 2001  
Mar. 2001  
May. 2001  
June. 2001  
Initial Preliminary Release  
Eliminated CE2 from BGA pinout, other minor errata  
Revised TSOP Pacakge diagram  
Revised BGA Package Dimensions table  
Part number change from EM256L16, modified Overview and Features, added Page Mode Operation  
diagram, revised Operating Characteristics table, Package diagram, Functional Description table and  
Ordering Information diagram  
E
Dec. 2001  
F
G
H
I
Nov. 2002  
February 2003  
August 2004  
Oct 2004  
Replaced Isb and Icc on Product Family table with typical values  
Added 55ns sort  
Removed 55ns sort  
Added Pb-Free and Green Package Option  
Removed Pb-Free Pkg, added Green Pkg and RoHS Compliant  
Converted to AMI Semiconductor  
J
Nov. 2005  
K
L
September 2006  
October 2007  
July 2008  
Added 55ns performance sort  
13  
Converted to ON Semiconductor and new part numbers  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does  
SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,  
consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as  
components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure  
of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or  
unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800-282-9855 Toll  
Free USA/Canada  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
PO Box 5163, Denver, Colorado 80217 USA  
Europe, Middle East & Africa Technical Support:  
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Phone 421-33-790-2910  
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan Customer Focus Center:  
For additional information, please contact your local  
Sales Representative  
Phone 81-3-5773-3850  
Rev. 13 | Page 10 of 10 | www.onsemi.com  

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