N04L63W1A [ONSEMI]
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit; 4Mb的超低功耗异步SRAM CMOS 256K 】 16位型号: | N04L63W1A |
厂家: | ONSEMI |
描述: | 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit |
文件: | 总10页 (文件大小:192K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N04L63W1A
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L63W1A is an integrated memory device
containing a 4 Mbit Static Random Access Memory
organized as 262,144 words by 16 bits. The device
is designed and fabricated using ON
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L63W1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
o
o
temperature range of -40 C to +85 C and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Product Family
Standby
Power
Supply
(Vcc)
Operating
Current (Icc),
Typical
Operating
Speed
Current (ISB),
Part Number
Package Type
Temperature
Options
Typical
N04L63W1AB
N04L63W1AT
N04L63W1AB2
N04L63W1AT2
48 - BGA
44 - TSOP II
70ns @ 2.7V
55ns @ 2.7V
-40oC to +85oC
2.3V - 3.6V
4 µA
2 mA @ 1MHz
48 - BGA Green
44 - TSOP II Green
Pin Configurations
Pin Descriptions
1
2
3
A0
4
A1
5
A2
6
A4
1
PIN
A5
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A3
2
ONE
A6
Pin Name
A0-A17
Pin Function
A2
3
LB
OE
NC
A7
A
B
C
D
E
F
A1
4
OE
A0
5
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Not Connected
UB
I/O8
A3
A4
A6
A7
I/O0
UB
CE
CE
6
LB
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
7
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
NC
WE
CE
OE
LB
UB
I/O9 I/O10 A5
VSS I/O11 A17
I/O1 I/O2
I/O3 VCC
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VCC I/O12
I/O14 I/O13 A14
A16 I/O4 VSS
A15 I/O5 I/O6
NC
I/O0-I/O15
I/O15
NC
A12
A9
A13
A10
I/O7
NC
NC
A8
WE
A11
G
H
A8
NC
VCC
VSS
A9
A10
A11
Power
Ground
48 Pin BGA (top)
6 x 8 mm
A17
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 13
Publication Order Number:
N04L63W1A/D
N04L63W1A
Functional Block Diagram
Word
Address
Inputs
Address
Decode
Logic
A0 - A3
Input/
Output
Mux
Page
16K Page
x 16 word
x 16 bit
Address
Inputs
Address
Decode
Logic
I/O0 - I/O7
A4 - A17
and
RAM Array
Buffers
I/O8 - I/O15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
1
CE
WE
OE
UB
LB
MODE
POWER
I/O0 - I/O15
Standby2
Standby2
Write3
H
L
L
L
L
X
X
L
X
X
X3
X
H
L1
L1
L1
X
H
L1
L1
L1
High Z
High Z
Standby
Standby
Active
Data In
Data Out
High Z
H
H
L
Active
Read
Active
H
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
1
Capacitance
Item
Symbol
CIN
Test Condition
Min
Max
8
Unit
pF
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
Input Capacitance
I/O Capacitance
CI/O
8
pF
1. These parameters are verified in device characterization and are not 100% tested
Rev. 13 | Page 2 of 10 | www.onsemi.com
N04L63W1A
1
Absolute Maximum Ratings
Item
Symbol
VIN,OUT
VCC
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
Unit
V
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
V
PD
mW
oC
oC
oC
TSTG
Storage Temperature
–40 to 125
TA
Operating Temperature
-40 to +85
260oC, 10sec
TSOLDER
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Typ1
Item
Symbol
Test Conditions
Min.
Max
Unit
VCC
VDR
VIH
VIL
Supply Voltage
Data Retention Voltage
Input High Voltage
2.3
1.8
3.0
3.6
V
V
Chip Disabled2
VCC+0.3
0.6
1.8
V
Input Low Voltage
–0.3
V
VOH
VOL
ILI
IOH = 0.2mA
IOL = -0.2mA
VCC–0.2
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
0.2
0.5
0.5
V
VIN = 0 to VCC
µA
µA
ILO
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
ICC1
ICC2
2.0
10
3.0
mA
mA
@ 1 µs Cycle Time2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
16.0
@ 70ns Cycle Time2
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
ICC3
4
mA
mA
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f = 0
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
3.0
VIN = VCC or 0V
Chip Disabled
Maximum Standby Current3
ISB1
4.0
20
10
µA
µA
tA= 85oC, VCC = 3.6 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
Maximum Data Retention Current3
IDR
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high or UB and LB high). In order to achieve low standby current
all inputs must be within 0.2 volts of either VCC or VSS
Rev. 13 | Page 3 of 10 | www.onsemi.com
N04L63W1A
Power Savings with Page Mode Operation (WE = V )
IH
Page Address (A4 - A17 )
Word Address (A0 - A3)
CE
Open page
...
Word 16
Word 1
Word 2
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Rev. 13 | Page 4 of 10 | www.onsemi.com
N04L63W1A
Timing Test Conditions
Item
0.1VCC to 0.9 VCC
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Operating Temperature
Timing
-70
-55
Item
Symbol
2.3 - 2.65 V
Min. Max.
2.7 - 3.6 V
Min. Max.
2.7 - 3.6 V
Units
Min.
Max.
tRC
tAA
Read Cycle Time
85
70
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Enable to Valid Output
85
85
30
85
70
70
25
70
55
55
25
55
tCO
tOE
Output Enable to Valid Output
Byte Select to Valid Output
tLB, tUB
tLZ
tOLZ
tBZ
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
10
5
10
5
10
5
10
0
10
0
10
0
tHZ
20
20
20
20
20
20
20
20
20
tOHZ
tBHZ
tOH
0
0
0
0
0
0
10
10
10
tWC
tCW
tAW
tBW
tWP
tAS
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
85
50
50
50
40
0
70
50
50
50
40
0
55
45
45
45
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
tWR
tWHZ
tDW
tDH
Write Recovery Time
0
0
0
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
20
20
20
40
0
40
0
40
0
tOW
5
5
5
ns
Rev. 13 | Page 5 of 10 | www.onsemi.com
N04L63W1A
Timing of Read Cycle (CE = OE = V , WE = V )
IL
IH
t
RC
Address
t
AA
t
OH
Previous Data Valid
Data Valid
Data Out
Timing Waveform of Read Cycle (WE= V )
IH
t
RC
Address
t
AA
t
HZ
t
CO
CE
OE
t
LZ
t
OHZ
t
OE
t
OLZ
t
t
LB, UB
LB, UB
t
t
BHZ
BLZ
High-Z
Data Valid
Data Out
Rev. 13 | Page 6 of 10 | www.onsemi.com
N04L63W1A
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
WR
t
AW
t
CW
CE
t
BW
LB, UB
t
WP
t
AS
WE
t
t
DH
DW
High-Z
Data Valid
High-Z
Data In
Data Out
t
WHZ
t
OW
Timing Waveform of Write Cycle (CE Control)
t
WC
Address
CE
t
t
AW
WR
t
CW
t
AS
t
BW
LB, UB
WE
t
t
WP
t
t
DH
DW
Data Valid
Data In
t
LZ
WHZ
High-Z
Data Out
Rev. 13 | Page 7 of 10 | www.onsemi.com
N04L63W1A
44-Lead TSOP II Package (T44)
18.41±0.13
11.76±0.20
10.16±0.13
0.80mm REF
0.45
0.30
SEE DETAIL B
DETAIL B
1.10±0.15
o
o
0 -8
0.20
0.00
0.80mm REF
Note:
1. All dimensions in inches (Millimeters)
2. Package dimensions exclude molding flash
Rev. 13 | Page 8 of 10 | www.onsemi.com
N04L63W1A
Ball Grid Array Package
0.28±0.05
1.24±0.10
D
A1 BALL PAD
CORNER (3)
1. 0.35±0.05 DIA.
E
2. SEATING PLANE - Z
0.15
Z
0.05
Z
TOP VIEW
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
A1 BALL PAD
CORNER
SD
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
e
SE
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
BALL
D
E
MATRIX
TYPE
SD
SE
J
K
6±0.10
8±0.10
0.375
0.375
1.125
1.375
FULL
Rev. 13 | Page 9 of 10 | www.onsemi.com
N04L63W1A
Ordering Information
Part Number
Package
Shipping Method
N04L63W1AT7I
N04L63W1AT27I
N04L63W1AB7I
N04L63W1AB27I
N04L63W1AT7IT
N04L63W1AT27IT
N04L63W1AB7IT
N04L63W1AB27IT
Leaded 44-TSOP II
Green 44-TSOP II (RoHS Compliant)
Leaded 48-BGA
Green 48-BGA (RoHS Compliant)
Leaded 44-TSOP II
Green 44-TSOP II (RoHS Compliant)
Leaded 48-BGA
Tray
Tray
Tray
Tray
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Green 48-BGA (RoHS Compliant)
Please contact factory for 55ns speed grade
Revision History
Revision #
Date
Change Description
A
B
C
D
Jan. 2001
Mar. 2001
May. 2001
June. 2001
Initial Preliminary Release
Eliminated CE2 from BGA pinout, other minor errata
Revised TSOP Pacakge diagram
Revised BGA Package Dimensions table
Part number change from EM256L16, modified Overview and Features, added Page Mode Operation
diagram, revised Operating Characteristics table, Package diagram, Functional Description table and
Ordering Information diagram
E
Dec. 2001
F
G
H
I
Nov. 2002
February 2003
August 2004
Oct 2004
Replaced Isb and Icc on Product Family table with typical values
Added 55ns sort
Removed 55ns sort
Added Pb-Free and Green Package Option
Removed Pb-Free Pkg, added Green Pkg and RoHS Compliant
Converted to AMI Semiconductor
J
Nov. 2005
K
L
September 2006
October 2007
July 2008
Added 55ns performance sort
13
Converted to ON Semiconductor and new part numbers
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as
components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure
of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800-282-9855 Toll
Free USA/Canada
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
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Europe, Middle East & Africa Technical Support:
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Phone 421-33-790-2910
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Japan Customer Focus Center:
For additional information, please contact your local
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Phone 81-3-5773-3850
Rev. 13 | Page 10 of 10 | www.onsemi.com
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