NC7WP00L8X [ONSEMI]

TinyLogic ULP 双通道双输入 NAND 门;
NC7WP00L8X
型号: NC7WP00L8X
厂家: ONSEMI    ONSEMI
描述:

TinyLogic ULP 双通道双输入 NAND 门

PC 栅 逻辑集成电路 触发器
文件: 总9页 (文件大小:529K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TinyLogic ULP-A Dual  
2-Input NAND Gate  
NC7WP00  
The NC7WP00 is a dual 2input NAND gate in tiny footprint  
=
packages. The device is designed to operate for V  
0.9 V to 3.6 V.  
CC  
www.onsemi.com  
MARKING  
Features  
Designed for 0.9 V to 3.6 V V Operation  
CC  
2.1 ns t at 3.3 V (Typ)  
PD  
DIAGRAMS  
Inputs/Outputs OverVoltage Tolerant up to 3.6 V  
I  
Supports Partial Power Down Protection  
Source/Sink 2.6 mA at 3.3 V  
OFF  
CCKK  
XYZ  
Available in US8 and MicroPakPackages  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
XXXX  
ALYW  
A1 B1 Y2  
7
6
5
A1  
B1  
1
2
3
4
8 V  
CC  
V
CC  
8
7 Y1  
6 B2  
5 A2  
GND  
4
CC, XXXX = Specific Device Code  
Y2  
KK  
XY  
Z
= 2Digit Lot Run Traceability Code  
= 2Digit Date Code Format  
= Assembly Plant Code  
= Assembly Site  
GND  
1
2
3
A
Y1 B2  
UQFN8  
A2  
L
= Wafer Lot Number  
US8  
YW  
= Assembly Start Week  
Figure 1. Pinout Diagrams (Top Views)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 6 of this data sheet.  
A1  
&
&
Y1  
Y2  
B1  
A2  
B2  
Figure 2. Logic Symbol  
PIN ASSIGNMENT  
FUNCTION TABLE (Y = AB)  
Pin  
1
US8  
UQFN8  
Inputs  
Output  
A1  
B1  
Y1  
B2  
A
L
B
L
Y
H
H
H
L
2
3
Y2  
A2  
L
H
L
4
GND  
A2  
GND  
Y2  
H
H
5
H
6
B2  
B1  
NOTE: H = HIGH Logic Level  
L = LOW Logic Level  
7
Y1  
A1  
8
V
CC  
V
CC  
Publication Order Number:  
© Semiconductor Components Industries, LLC, 2005  
1
NC7WP00/D  
February, 2021 Rev. 1  
NC7WP00  
MAXIMUM RATINGS  
Symbol  
Characteristics  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
0.5 to +4.3  
0.5 to +4.3  
V
IN  
V
V
OUT  
ActiveMode (High or Low State)  
TriState Mode (Note 1)  
0.5 to V + 0.5  
V
CC  
0.5 to +4.3  
0.5 to +4.3  
PowerDown Mode (V = 0 V)  
CC  
I
DC Input Diode Current  
V
< GND  
< GND  
50  
50  
mA  
mA  
mA  
mA  
°C  
IK  
IN  
I
DC Output Diode Current  
V
OUT  
OK  
I
DC Output Source/Sink Current  
DC Supply Current per Supply Pin or Ground Pin  
Storage Temperature Range  
50  
OUT  
I
or I  
GND  
STG  
50  
CC  
T
65 to +150  
260  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
Thermal Resistance (Note 2)  
°C  
L
T
+150  
°C  
J
q
US8  
MicroPak  
250  
210  
°C/W  
JA  
P
D
Power Dissipation in Still Air  
US8  
MicroPak  
500  
595  
mW  
MSL  
Moisture Sensitivity  
Level 1  
V
F
R
Flammability Rating  
Oxygen Index: 28 to 34  
UL 94 V0 @ 0.125 in  
V
ESD  
ESD Withstand Voltage (Note 3)  
Human Body Model  
Charged Device Model  
2000  
1000  
I
Latchup Performance (Note 4)  
100  
mA  
Latchup  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Applicable to devices with outputs that may be tristated.  
2. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow per JESD517.  
3. HBM tested to EIA / JESD22A114A. CDM tested to JESD22C101A. JEDEC recommends that ESD qualification to EIA/JESD22A115A  
(Machine Model) be discontinued.  
4. Tested to EIA/JESD78 Class II.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
0.9  
0
Max  
3.6  
Unit  
V
V
CC  
Positive DC Supply Voltage  
DC Input Voltage  
V
IN  
3.6  
V
V
OUT  
DC Output Voltage  
ActiveMode (High or Low State)  
TriState Mode (Note 1)  
0
0
0
V
CC  
3.6  
3.6  
PowerDown Mode (V = 0 V)  
CC  
T
Operating Temperature Range  
40  
+85  
10  
°C  
A
t , t  
r
Input Transition Rise and Fall Time  
V = 3.3 V 0.3 V  
CC  
0
ns/V  
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
 
NC7WP00  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 255C  
Typ  
T
= 405C to +855C  
A
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Condition  
V
CC  
(V)  
Unit  
0.9  
0.5  
V
HighLevel Input  
V
IH  
Voltage  
1.1 to 1.3  
1.4 to 1.6  
0.65 x V  
0.65 x V  
CC  
CC  
CC  
CC  
0.65 x V  
0.65 x V  
CC  
CC  
1.65 to 1.95 0.65 x V  
0.65 x V  
2.3 to 2.7  
3.0 to 3.6  
0.9  
1.6  
2.1  
1.6  
2.1  
0.5  
V
LowLevel Input  
Voltage  
V
V
IL  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
0.35 x V  
0.35 x V  
0.35 x V  
0.7  
0.35 x V  
0.35 x V  
0.35 x V  
0.7  
CC  
CC  
CC  
CC  
CC  
CC  
0.9  
0.9  
V
I
= V or V  
V
OH  
HighLevel Output  
Voltage  
IN  
IH  
IL  
0.9  
V
CC  
0.1  
= 20 mA  
OH  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
V
V
V
V
V
0.1  
0.1  
0.1  
0.1  
0.1  
V
V
V
V
V
0.1  
0.1  
0.1  
0.1  
0.1  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
I
I
I
I
I
= 0.5 mA  
= 1 mA  
0.75 x V  
1.07  
0.70 x V  
0.99  
OH  
OH  
OH  
OH  
OH  
CC  
CC  
= 1.5 mA  
= 2.1 mA  
= 2.6 mA  
= V or V  
1.24  
1.22  
1.95  
1.87  
2.61  
2.55  
V
V
LowLevel Output  
V
IN  
IH  
IL  
OL  
Voltage  
0.9  
0.1  
I
= 20 mA  
OL  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
0.9 to 3.6  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
I
OL  
I
OL  
I
OL  
I
OL  
I
OL  
= 0.5 mA  
= 1 mA  
0.3 x V  
0.31  
0.31  
0.31  
0.31  
0.1  
0.3 x V  
0.37  
0.35  
0.33  
0.33  
0.5  
CC  
CC  
= 1.5 mA  
= 2.1 mA  
= 2.6 mA  
= 0 V to 3.6 V  
I
IN  
Input Leakage  
Current  
V
mA  
mA  
mA  
IN  
I
Power Off Leakage  
Current  
V
V
= 0 V to 3.6 V or  
0
0.5  
0.9  
0.5  
0.9  
OFF  
IN  
= 0 V to 3.6 V  
OUT  
I
Quiescent Supply  
Current  
V
= V or GND  
0.9 to 3.6  
CC  
IN  
CC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
3
NC7WP00  
AC ELECTRICAL CHARACTERISTICS  
T
A
= 25°C  
Typ  
40.7  
10.9  
5.6  
T
= 405C to +855C  
A
Min  
Max  
Min  
Max  
Symbol  
, t  
Parameter  
Condition  
R = 1 MW, C = 10 pF  
V
(V)  
Unit  
CC  
t
t
t
Propagation Delay,  
(A or B) to Y  
(Figures 3 and 4)  
0.9  
ns  
PLH PHL  
L
L
1.10 to 1.30  
1.40 to 1.60  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
0.9  
23.5  
12.0  
10.0  
7.0  
31.0  
14.0  
12.0  
8.0  
3.7  
2.7  
2.1  
6.0  
7.0  
, t  
Propagation Delay,  
(A or B) to Y  
(Figures 3 and 4)  
R = 1 MW, C = 15 pF  
42.2  
11.4  
6.0  
ns  
ns  
PLH PHL  
L
L
1.10 to 1.30  
1.40 to 1.60  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
0.9  
24.9  
13.0  
10.0  
7.0  
34.0  
16.0  
12.0  
8.0  
4.0  
3.0  
2.3  
6.0  
7.0  
, t  
Propagation Delay,  
(A or B) to Y  
(Figures 3 and 4)  
R = 1 MW, C = 30 pF  
46.4  
13.0  
7.3  
PLH PHL  
L
L
1.10 to 1.30  
1.40 to 1.60  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
28.9  
16.0  
12.0  
9.0  
43.0  
18.0  
14.0  
10.0  
9.0  
5.1  
3.7  
2.9  
7.0  
CAPACITIVE CHARACTERISTICS  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Power Dissipation Capacitance (Note 5)  
Test Condition  
Typical (T = 25°C)  
Unit  
pF  
A
C
V
V
= 0 V  
= 0 V  
2.0  
4.0  
6.0  
IN  
CC  
C
pF  
OUT  
CC  
C
f = 10 MHz, V = 0.9 to 3.6 V, V = 0 V or V  
CC  
pF  
PD  
CC  
IN  
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation I  
) = C V f + I . C is used to determine the noload dynamic  
CC(OPR  
PD CC in CC PD  
2
power consumption: P = C V  
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
www.onsemi.com  
4
 
NC7WP00  
OPEN  
Test  
/ t  
Switch Position  
2 x V  
DUT  
GND  
CC  
t
Open  
PLH PHL  
t
/ t  
2 x V  
CC  
PLZ PZL  
R
1
L
t
/ t  
GND  
PHZ PZH  
INPUT  
OUTPUT  
R
R
C *  
L
T
C includes probe and jig capacitance  
L
R is Z  
of pulse generator (typically 50 W)  
T
OUT  
f = 1 MHz  
Figure 3. Test Circuit  
V
CC  
t = 3 ns  
r
t = 3 ns  
f
V
CC  
90%  
90%  
INPUT  
V
mi  
V
mi  
V
mi  
V
mi  
INPUT  
GND  
~V  
10%  
10%  
GND  
t
t
PLZ  
PZL  
t
t
PLH  
PHL  
CC  
V
OH  
V
V
OUTPUT  
OUTPUT  
mo  
V
V
V
V
OUTPUT  
OUTPUT  
mo  
mo  
V
+ V  
OL  
OL  
Y
V
V
V
OL  
t
t
PHZ  
PZH  
t
t
PLH  
PHL  
V
OH  
OH  
V
V  
OH  
Y
mo  
mo  
mo  
V
OL  
~0 V  
V
, V  
V
, V  
V
, V  
/ 2  
/ 2  
/ 2  
/ 2  
/ 2  
V , V  
CC  
mi  
mo  
CC  
CC  
CC  
CC  
CC  
Y
0.9  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
/ 2  
/ 2  
/ 2  
/ 2  
/ 2  
V
V
V
V
V
0.1  
0.1  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
3.0 to 3.6  
0.1  
0.15  
0.15  
0.3  
1.5  
1.5  
Figure 4. Switching Waveforms  
www.onsemi.com  
5
NC7WP00  
ORDERING INFORMATION  
Pin 1 Orientation  
(See below)  
Device  
NC7WP00K8X  
NC7WP00L8X  
Package  
US8  
Marking  
WP00  
Y3  
Shipping  
Q4  
Q4  
3000 / Tape & Reel  
5000 / Tape & Reel  
MicroPak, UQFN8  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
Pin 1 Orientation in Tape and Reel  
MicroPak is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
www.onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
UQFN8 1.6X1.6, 0.5P  
CASE 523AY  
ISSUE O  
DATE 31 AUG 2016  
0.40  
(6X)  
1.60  
A
0.05  
C
1.60  
B
0.45  
(2X)  
2X  
1.60  
1.61  
0.05  
C
PIN#1 IDENT  
0.50  
TOP VIEW  
0.25  
(8X)  
RECOMMENDED  
LAND PATTERN  
0.50 0.05  
0.05  
0.05  
C
C
NOTES:  
SEATING  
PLANE  
A. PACKAGE CONFORMS TO JEDEC MO255  
C
VARIATION UAAD.  
0.025 0.025  
B. DIMENSIONS ARE IN MILLIMETERS.  
SIDE VIEW  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
1.60 0.05  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
(0.10)  
(0.20)3X  
(0.09)  
DETAIL A  
1
2
3
(0.20)  
4
8
1.60 0.05  
0.30 0.05  
0.30 0.05 (7X)  
0.50  
(0.15)  
7
6
5
0.20 0.05 (8X)  
0.30 0.05  
0.10  
0.05  
C
C
A
B
1.00 0.05  
DETAIL A  
SCALE : 2X  
BOTTOM VIEW  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13591G  
UQFN8 1.6X1.6, 0.5P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
US8  
CASE 846AN  
ISSUE O  
DATE 31 DEC 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13778G  
US8  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
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TECHNICAL PUBLICATIONS:  
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