NCN4557 [ONSEMI]
1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter; 1.8 V / 3.0 V双SIM / SAM /智能卡电源和电平转换器型号: | NCN4557 |
厂家: | ONSEMI |
描述: | 1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter |
文件: | 总12页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCN4557
1.8 V/3.0 V Dual SIM/SAM/
Smart Card Power Supply
and Level Shifter
The NCN4557 is a dual interface analog circuit designed to
translate the voltages between SIM, SAM or Smart Cards and a
microcontroller (or similar control device). It integrates two LDOs
for power conversion and three level shifters per channel allowing
the management of two independent chip cards. The device fulfills
the ISO7816 and EMV smart card interface requirements as well as
the GSM and 3G mobile standard. Due to a built−in sequencer, the
device enables automatic activation and deactivation. Through the
ENABLE pin a low current shutdown mode can be activated
extending the battery life.
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MARKING
DIAGRAM
16
1
QFN16
MT SUFFIX
CASE 488AK
NCN
4557
ALYWG
1
The card power supply voltage (1.8 V or 3.0 V) and the card socket
A or B are selected using two dedicated pins (SEL0 & SEL1).
Features
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
• Supports 1.8 V or 3.0 V Operating SIM/SAM/Smart Cards
• The LDOs are able to Supply more than 50 mA Under 1.8 V and
3.0 V
= Work Week
G or G = Pb−Free Package
• Built−in Active and Passive Pullup Resistor for I/O and
CRD_IOA/B Pins in Both Directions
• All Pins are Fully ESD Protected According to ISO−7816
Specifications – ESD Protection on Card Pins in Excess of 8.0 kV
(JEDEC HBM)
• Built−in Sequencer for Activation and Deactivation
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
• Supports up to more than 5.0 MHz Clock
• Very Compact Low−Profile 3x3 QFN−16 Package
• These are Pb−Free Devices*
Applications
• SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones
• Wireless PC/Laptop Cards (PCMCIA Cards)
• POS Terminals (SAM Card Interfaces)
• Smart Card Readers
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
June, 2006 − Rev. 0
NCN4557/D
NCN4557
V
DD
V
BAT
1.8 V to 5.5 V
2.7 V to 5.5 V
0.1 mF
0.1 mF
1.8 V/3 V SIM/Smart Card
CARD A
V
3
CC
1
2
5
6
7
8
GND
V
4
CC
V
BAT
CRD_V
A
CC
V
pp
RST
CLK
C4
2
13
12
11
3
4
V
DD
I/O
C8
ENABLE
SEL0
6
5
7
CRD_RSTA
CRD_CLKA
CRD_I/OA
P4
SEL1
P3
1 mF
1 mF
17
9
10
8
GND
P2
P1
P0
RST
CLK
14
16
15
CRD_I/OB
CRD_CLKB
CRD_RSTB
I/O
CARD B
GND
4
3
8
7
6
5
C8
I/O
C4
CLK
RST
2
1
1
V
pp
CRD_V B
CC
GND
V
CC
1.8 V/3 V SIM/Smart Card
Figure 1. Typical Interface Application
Exposed Pad (EP)
16 15 14 13
CRD_V
B
1
2
3
4
12 SEL0
11 SEL1
10 CLK
CC
NCN4557
V
DD
17
GND
V
BAT
9
RST
CRD_V
A
CC
5
6
7
8
Figure 2. QFN−16 Pinout (Top View)
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2
NCN4557
V
BAT
3
LDO B > 50 mA
LDO A > 50 mA
4
1
CRD_V A
CC
CRD_V B
CC
1.8 V/3.0 V/Enable
1.8 V/3.0 V/Enable
CRD_V B
CC
CRD_V A
CC
16
15
5
6
CRD_CLKA
CRD_RSTA
CRD_CLKB
CRD_RSTB
En
En
En
En
I/O
I/O
DATA DATA
I/O
DATA DATA
I/O
14
7 CRD_I/OA
CRD_I/OB
14 k
CRD_V
14 k
En
En
B
CC
CRD_V
A
CC
13
10
9
ENABLE
CLK
RST
I/O
CONTROL
LOGIC
12 SEL0
MUX
11 SEL1
8
SEQUENCING
18 k
17
GROUND
V
DD
2
V
DD
GND
Figure 3. NCN4557 Block Diagram
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3
NCN4557
PIN DESCRIPTIONS
PIN
Name
CRD_V
Type
Description
1
B
POWER This pin is connected to the Card power supply pin (C1) (Card B).The corresponding LDO is
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).
CC
CRD_V B can not be active when CRD_V A is active and conversely.
CC
CC
2
V
DD
POWER This pin is connected to the controller power supply. It configures the level shifter input stage to accept
the signal coming from the microcontroller. A 0.1 mF capacitor shall be used to bypass the power supply
voltage. When V is below 1.5 V typical CRD_V A and B are disabled; the NCN4557 comes into a
DD
CC
shutdown mode.
3
4
V
POWER DC/DC converter power supply input shared by the LDOs A & B. This pin has to be bypassed by a
BAT
0.1 mF capacitor.
CRD_V
A
POWER This pin is connected to the Card power supply pin (C1) (Card A).The corresponding LDO is
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).
CC
CRD_V A can not be active when CRD_V B is active and conversely.
CC
CC
5
6
7
CRD_CLKA OUTPUT This pin is connected to the clock pin (C3) of the card connector A. The clock (CLK) signal comes from
the external clock generator (standalone clock source or microcontroller). The internal level shifter
adapts the voltage levels CLK to CRD_CLKA. An internal active pull− down NMOS device maintains this
pin to Ground during either the CRD_V A start−up sequence, or when CRD_V A = 0 V.
CC
CC
CRD_RSTA OUTPUT This pin is connected to the RESET pin (C2) of the card connector A. A level translator adapts the
RESET signal from the microcontroller to the external card A. The output current is internally limited to
15 mA max. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V A = 0 V
CC
and during the corresponding LDO transient phase of power−up.
CRD_I/OA
INPUT /
This pin handles the connection to the serial I/O pin (C7) of the card connector A. A bidirectional level
OUTPUT translator adapts the serial I/O signal between the card and the micro−controller. A 14 kW (typical)
pull−up resistor provides a High Impedance state to the card I/O link; during the operating phase, a
dynamic pull−up circuit is activated making the CRD_I/OA rise time compliant with the ISO7816, EMV,
GSM and related standards. An internal active pull−down MOS device forces this pin to Ground during
either the CRD_V A start−up sequence or when CRD_V A = 0 V. The CRD_I/OA pin is internally
CC
CC
limited by a 15 mA max current.
8
I/O
INPUT /
This pin is connected to an external microcontroller or cellular phone management unit (Baseband circuit
OUTPUT or PMU). A bidirectional level translator adapts the serial I/O signal between the smart card A or B and
the controller. Only one card, the selected card, communicates through the bidirectional I/O interface. A
built−in 18 kW typical resistor provides a high impedance state when the interface is not activated. An
additional dynamic pullup circuit accelerates the I/O rise time making the bidirectional channel perfectly
balanced in regards to the standard rise time requirements.
9
RST
CLK
INPUT
The RESET signal present at this pin is connected to the card through the internal level shifter which
translates the levels according to the CRD_V A or B programmed value.
CC
10
INPUT
The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max values
defined by the specification (typically 50%). The built−in level shifter translates the input signal to the
external card CLK input.
11
12
13
SEL1
SEL0
INPUT
INPUT
INPUT
SEL1 allows the selection of the Card A or B (Table 1).
SEL1 = Low ! Card A selected
SEL1 = High ! Card B selected
SEL0 allows programming CRD_V A or B (1.8 V or 3.0 V) (Table 1).
CC
SEL0 = Low ! CRD_V A/B = 1.8 V
CC
SEL0 = High ! CRD_V A/B = 3.0 V
CC
ENABLE
Power Up and Down pin:
ENABLE = Low ! Low current shutdown mode activated
ENABLE = High ! Normal Operation
A Low level on this pin switches off the card interface.
14
CRD_I/OB
INPUT /
This pin handles the connection to the serial I/O pin (C7) of the card connector B. A bidirectional level
OUTPUT translator adapts the serial I/O signal between the card and the micro−controller. A 14 kW (typical)
pull−up resistor provides a High Impedance state to the card I/O link; during the operating phase a
dynamic pull−up circuit is activated making the CRD_I/OB rise time compliant with the ISO7816, EMV,
GSM and related standards. An internal active pulldown MOS device forces this pin to Ground during
either the CRD_V B start−up sequence or when CRD_V B = 0 V. The CRD_I/OB pin is internally
CC
CC
limited by a 15 mA maximum current.
15
16
17
CRD_RSTB OUTPUT This pin is connected to the RESET pin of the card connector B. A level translator adapts the RESET
signal from the microcontroller to the external card B. The output current is internally limited by a 15 mA
max current. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V B = 0 V
CC
and during the corresponding LDO transient phase of powerup.
CRD_CLKB OUTPUT This pin is connected to the clock pin (C3) of the card connector B. The clock (CLK) signal comes from
the external clock generator (standalone clock source or microcontroller). The internal level shifter
adapts the voltage levels CLK to CRD_CLKB. An internal active pull down NMOS device maintains this
pin to Ground during either the CRD_V B start−up sequence, or when CRD_V B = 0 V.
CC
CC
GND
GND
This pin number is the Exposed Pad which is the electrical Ground of the device. It must be soldered to
the PCB ground plane.
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NCN4557
ATTRIBUTES
Characteristics
Values
ESD protection
Human Body Model (HBM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17) (Note 1)
All Other Pins (Note 1)
8 kV
2 kV
Machine Model (MM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)
All Other Pins
600 V
200 V
Charged Device Model (CDM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)
All Other Pins
2 kV
400 V
Moisture sensitivity (Note 2)
Flammability Rating
QFN−16
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. Human Body Model (HBM): R =1500 W, C = 100 pF.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
LDO Power Supply Voltage
V
BAT
−0.5 ≤ V
≤ 6
BAT
Power Supply Microcontroller Side
External Card Power Supply
Digital Input Pins
V
−0.5 ≤ V ≤ 6
V
DD
DD
CRD_V
−0.5 ≤ CRD_V ≤ 6
V
CC
CC
V
−0.5 ≤ V ≤ V + 0.5
V
in
in
DD
but < 6.0
5
I
mA
V
in
Digital Output Pins
V
−0.5 ≤ V ≤ V + 0.5
out
out
out
DD
but < 6.0
I
10
mA
V
CRD Output Pins
V
out
−0.5 ≤ V ≤ CRD_V + 0.5
out
CC
but < 6.0
CRD_I/O & CRD_RST Pins
CRD_CLK Pin
I
15 (Internally Limited)
70 (Internally Limited)
mA
out
QFN−16 Low Profile package
Power Dissipation @ T = +85°C
P
450
90
mW
°C/W
A
D
JA
Thermal Resistance Junction−to−Air
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
R
q
T
A
−40 to +85
−40 to +125
+125
°C
°C
°C
°C
T
J
T
Jmax
T
stg
−65 to + 150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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5
NCN4557
POWER SUPPLY SECTION (−40°C to +85°C)
Pin
3
Symbol
Rating
Min
Typ
Max
Unit
V
V
BAT
Power Supply
2.7
5.5
3
I
Operating current
mA
VBAT
CRD_V A = 3.0 V, CRD_V B = 0 V, I A & B = 0 mA
26
25
26
25
80
80
80
80
CC
CC
CC
CC
CC
CC
CC
CC
CC
CRD_V A = 1.8 V, CRD_V B = 0 V, I A & B = 0 mA
CC
CRD_V A = 0 V, CRD_V B = 3.0 V, I A & B = 0 mA
CC
CRD_V A = 0 V, CRD_V B = 1.8 V, I A & B = 0 mA
CC
3
2
I
Shutdown current – ENABLE = Low
Operating Voltage
3
5.5
2
mA
V
VBAT_SD
V
DD
1.8
0.6
2
I
Operating Current (CLK & RST Low)
Shutdown Current – ENABLE = Low
Undervoltage Lockout
0.1
mA
mA
V
VDD
2
I
0.05
1
VDD_SD
2
V
DD
1.5
1,4
CRD_V A or B 3.0 V Mode, V
= 3.3 V to 5.5 V, I
= 2.7 V to 5.5 V, I
= 0 mA to 50 mA
= 0 mA to 50 mA
2.75
1.65
3.0
1.8
3.25
1.95
V
CC
BAT
BAT
CRD_VCC
CRD_VCC
1.8 V Mode, V
1,4
I
Short –Circuit Current – CRD_V Shorted to GND, T = 25°C
50
175
mA
ms
CRD_VCC_SC
CC
A
7,13,14
Channel Turn−on Time
A or B = 0 mA, ENABLE rise edge to CRD_I/OA or B rise edge
I
0.8
2.5
CC
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
DIGITAL INPUT/OUTPUT SECTION CLK, RST, I/O, ENABLE, SEL0, SEL1 (−40°C to + 85°C)
Pin
Symbol
Rating
Min
Typ
Max
Unit
9,10
V
V
High Level Input Voltage (RST, CLK)
Low Level Input Voltage (RST, CLK)
0.85 * V
V
DD
0.15 * V
V
IH
IL
DD
DD
11,12,13
V
V
High Level Input Voltage (ENABLE, SEL0, SEL1)
Low Level Input Voltage (ENABLE, SEL0, SEL1)
0.85 * V
−1
V
V
mA
V
IH
IL
DD
DD
0.15 * V
DD
9,10,11,
12,13
I
, I
IH IL
Input current (RST, CLK, ENABLE, SEL0, SEL1)
1
8
V
High Level Output Voltage (CRD_ I/O = CRD_V , I
=−20 mA)
0.75 * V
V
DD
OH_I/O
CC OH_I/O
DD
V
Low Level Output Voltage (CRD_ I/O = 0 V, I
= 500 mA)
0.3
0.8
24
OL_I/O
OL_I/O
8
8
t , t
Rise and Fall times (I/O), C = 30 pF
ms
R
F
out
R
I/0 Pullup Resistor
12
18
kW
pu_I/O
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
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6
NCN4557
CARD INTERFACE SECTION (−40°C to +85°C)
Pin
Symbol
Rating
Min
Typ
Max
Unit
6,15 CRD_RSTA CRD_V = +3 V
CC
CRD_RSTB
Output RESET V @ ICRD_rst = −20 mA
Output RESET V @ ICRD_rst = +200 mA
0.9 * CRD_V
0
CRD_V
0.3
V
V
OH
OL
CC
CC
Output RESET Rise Time @ C = 30 pF
0.8
0.8
ms
ms
out
Output RESET Fall Time @ C = 30 pF
out
CRD_V = +1.8 V
V
V
ms
ms
CC
Output RESET V @ ICRD_rst = −20 mA
Output RESET V @ ICRD_rst = +200 mA
Output RESET Rise Time @ C = 30 pF
0.9 * CRD_V
0
CRD_V
0.3
OH
OL
CC
CC
0.8
out
Output RESET Fall Time @ C = 30 pF
0.8
out
5,16 CRD_CLKA CRD_V = +3 V
CC
CRD_CLKB Output Duty Cycle
Max Output Frequency
40
60
%
MHz
V
5
0.9 * CRD_V
0
Output V @ ICRD_clk = −20 mA
CRD_V
0.3
OH
CC
CC
Output V @ ICRD_clk = +200 mA
V
OL
Output CRD_CLK Rise Time @ C = 30 pF
18
18
ns
ns
out
Output CRD_CLK Fall Time @ C = 30 pF
out
CRD_V = +1.8 V
Output Duty Cycle
Max Output Frequency
CC
40
60
%
MHz
V
5
0.9 * CRD_V
0
Output V @ ICRD_clk = −20 mA
CRD_V
0.3
OH
CC
CC
Output V @ ICRD_clk = +200 mA
V
OL
Output CRD_CLK Rise Time @ C = 30 pF
18
18
ns
ns
out
Output CRD_CLK Fall Time @ C = 30 pF
out
7,14
CRD_I/OA CRD_V = +3 V
CC
CRD_I/OB Output V @ I
= −20 mA, V =V
DD
0.8 * CRD_V
0
CRD_V
0.4
V
V
OH
CRD_IO
I/O
CC
CC
Output V @ I
= +1 mA, V = 0V
OL
CRD_IO
I/O
CRD_I/O Rise Time @ C = 30pF
0.8
0.8
ms
ms
out
CRD_I/O Fall Time @ C = 30 pF
out
CRD_V = +1.8 V
CC
Output V @ I
= −20 mA, V = V
0.8 * CRD_V
0
CRD_V
0.3
V
V
OH
CRD_IO
I/O
DD
CC
CC
Output V @ I
= +1 mA, V = 0 V
OL
CRD_IO
I/O
CRD_I/O Rise Time @ C = 30 pF
0.8
0.8
ms
ms
out
CRD_I/O Fall Time @ C = 30 pF
out
Short−Circuit Current, V = 0 V
4
15
18
mA
I/O
8
R
Card I/O Pullup Resistor
10
14
kW
pu_CRD_I/O
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
3. All the dynamic specifications (AC specifications) are guaranteed by design over the operating temperature range.
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7
NCN4557
TYPICAL CHARACTERISTICS
30
28
26
24
1.2
1.0
0.8
0.6
0.4
−40°C
25°C
Drop−out
CRD_V A/B = 3.0 V
CC
85°C
CRD_V A/B = 1.8 V
CC
22
20
0.2
0
2.7
3.1
3.5
3.9
4.3
(V)
4.7
5.1
5.5
2.7
3.1
3.5
3.9
4.3
(V)
4.7
5.1
5.5
V
BAT
V
BAT
Figure 4. IBAT Operating Current vs. VBAT
,
Figure 5. IBAT Shutdown Current vs. VBAT
TA = 25°C, ICC = 0 mA
50
40
30
20
10
0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8
Y AXIS LABEL (UNIT)
Figure 7. Activation Sequence, Ch1 : CRD_VCC
,
Figure 6. IVDD Shutdown Current vs. VDD
,
Ch2 : CRD_IO, Ch4 : CRD_RST, Ch3 : CRD_CLK
TA = 25°C, VBAT = 5.5 V
Figure 8. Automatic Deactivation
Ch4: CRD_RST, Ch3: CRD_CLK, Ch2: CRD_IO,
Ch1: CRD_VCC
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NCN4557
APPLICATION INFORMATION
Card Supply Converter
The NCN4557 is a dual LDO−based DC/DC converter
and level shifter able to handle independently 2 smart card
interfaces. When one of these interfaces is operating the
other one is not active and conversely. Class B (3.0 V) and
C (1.8 V) cards can be used.
The built−it NCN4557 DC/DC converters are Low
Drop−Out Voltage Regulators capable to supply a current
in excess of 50 mA under 1.8 V or 3.0 V. These voltages are
selected according to Table 1. Using the Boolean input
ENABLE pin the NCN4557 device can be disabled setting
the circuit in a shutdown mode for which the power
consumption features values typically in the range of a few
tens of nA. Figure 9 shows a simplified view of the
The Card and the CRD_V power supply are selected
CC
using the pins SEL0, SEL1 and ENABLE according to
Table 1.
Table 1. CARD AND CRD_VCC SELECTION
NCN4557 voltage regulator. The CRD_V
output is
CC
internally current limited and protected against short
ENABLE
SEL1
SEL0
Card# / CRD_V
CC
circuits. The short−circuit current IV varies with V
typically in the range of 30 mA to 60 mA.
CC
BAT
1
1
1
1
0
0
0
1
1
X
0
1
0
1
X
Card A / 1.8 V
Card A / 3.0 V
Card B / 1.8 V
Card B / 3.0 V
A & B Disabled
In order to guarantee a stable and satisfying operating of
the LDO the CRD_V output will be connected to a
CC
1.0 mF bypass ceramic capacitor to the ground. At the
input, V will be bypassed to the ground with a 0.1 mF
BAT
ceramic capacitor.
V
BAT
CRD_V
CC
I
lim
Q1
R1
−
+
C
in
= 0.1 mF
Cout = 1.0 mF
+
R2
V
ref
ENABLE
GND
Figure 9. Simplified Block Diagram of the LDO
Voltage Regulator
Level Shifters
The level shifters accommodate the voltage difference
that might exist between the microcontroller and the smart
card. The RESET and CLOCK level shifters are
mono−directional and feature both the same architecture.
controller and the card in both directions. In addition with
the pull−up resistor, a dynamic pullup circuit (Figure 10,
Q1 and Q2) provides a fast charge of the stray capacitance,
yielding a rise time fully within the ISO7816, EMV and
GSM specifications.
The bidirectional I/O line provides
a way to
automatically adapt the voltage difference between the
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9
NCN4557
CRD_V
V
DD
CC
Q1
Q2
18 k
14 k
200 ns
200 ns
I/O
CRD_I/O
GND
Q3
LOGIC
IO/CONTROL
GND
Figure 10. Basic I/O line Interface
The typical waveform provided in Figure 11 shows how
the accelerator operates. During the first 200 ns (typical),
the slope of the rise time is solely a function of the pullup
resistor associated with the stray capacitance. During this
period, the PMOS devices are not activated since the input
3.0 V). Figure 7 shows the typical NCN4557 activation
sequence.
About 800 ms after CRD_V has reached its nominal
CC
voltage value, CRD_IO and CRD_RST are released.
CRD_CLK is enabled during the rising slope of the
second clock cycle after CRD_IO and CRD_RST are
enabled.
voltage is below their V threshold. When the input slope
gs
crosses the V , the opposite one shot is activated,
gsth
providing a low impedance to charge the capacitance, thus
increasing the rise time as depicted in Figure 11. The same
mechanism applies for the opposite side of the line to make
sure the system is optimum.
ENABLE
CRD_V A/B
CC
CRD_IOA/B
CRD_RSTA/B
CRD_CLKA/B
T
ON
~ 0.9 ms
2nd Rise Edge After
CRD_IOA/B Rising
Figure 12. NCN4557 Power−Up
In all cases the application software is responsible for the
smart card signal sequence (contact activation sequence,
cold reset and warm reset sequences).
Figure 11. CRD_IO Typical Rise and Fall Times
with Stray Capacitance > 30 pF
Powerdown Sequence
The NCN4557 provides a powerdown sequence which is
activated by setting the ENABLE Boolean signal LOW.
The communication I/O session is terminated immediately
according to the ISO7816 and EMV specifications as
depicted in Figures 8 and 13.
(33 pF capacitor connected on the board)
Powerup Sequence
The powerup sequence makes sure all the card−related
signals are LOW during the CRD_V
positive going
CC
ISO7816 Sequence:
slope. The Powerup sequence is activated by setting the
ENABLE Boolean signal HIGH. CRD_RST, CRD_CLK
and CRD_I/O are maintained LOW during the activation
• CRD_RST is forced to LOW
• CRD_CLK is forced to LOW 2 clock cycles after
stage until CRD_V reaches its nominal value (1.8 V or
CC
ENABLE is set LOW unless CRD_CLK is already in
http://onsemi.com
10
NCN4557
Shutdown Operating
this state or 8 ms after the ENABLE pin is set LOW in
In order to save power or for other purpose required by
the application it is possible to put the NCN4557 in a
shutdown mode by setting LOW the pin ENABLE. On the
other hand the device enters automatically in a shutdown
the other cases.
• CRD_I/O is forced to LOW about 8 ms after the
ENABLE pin is set LOW.
• Then CRD_V Supply Shuts Off
CC
mode when V becomes lower than 1.0 V typically.
DD
ESD Protection
ENABLE
The NCN4557 CRD interface features an Human Body
Model ESD voltage protection in excess of 8 kV for all the
CRD_RSTA/B
CRD_CLKA/B
CRD pins (CRD_IOA
& B, CRD_CLKA & B,
CRD_RSTA & B, CRD_V A & B and GND). All the
CC
CRD_IOA/B
other pins (microcontroller side) sustain at least 2 kV.
These values are guaranteed for the device in its full
integrity without considering the external capacitors added
to the circuit for a proper operating. Consequently in the
operating conditions it is able to sustain much more than
8 kV on its CRD pins making it perfectly protected against
electrostatic discharge well over the Human Body Model
ESD voltages required by the ISO7816 standard (4 kV).
CRD_V A/B
CC
T
OFF
~ 8.0 ms
Figure 13. NCN4557 Power Down Sequence
Input Schmitt Triggers
All the logic input pins (excepted I/O and CRD_I/O,
Figure 3) have built−in Schmitt trigger circuits to prevent
the NCN4557 against uncontrolled operation. The typical
dynamic characteristics of the related pins are depicted in
Figure 14.
Printed Circuit Board Layout
Careful layout routing will be applied to achieve a good
and efficient operating of the device in its mobile or
portable environment and fully exploit its performance.
The bypass capacitors have to be connected as close as
OUTPUT
possible to the device pins (CRD_V A and B, V or
CC
DD
V ) in order to reduce as much as possible parasitic
BAT
behaviors (ripple and noise). It is recommended to use
ceramic capacitors.
V
DD
The exposed pad of the QFN−16 package will be
connected to the ground. A relatively large ground plane is
recommended.
ON
OFF
INPUT
0.2 x V
or
0.7 x V
DD
DD
0.4 V
Figure 14. Typical Schmitt Trigger Characteristics
ORDERING INFORMATION
Device
†
Package
Shipping
NCN4557MTG
QFN−16
(Pb−Free)
123 Units / Rail
NCN4557MTR2G
QFN−16
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
11
NCN4557
PACKAGE DIMENSIONS
QFN16 3*3*0.75 MM, 0.5 P
CASE 488AK−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
D
A
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN 1
LOCATION
5.
L
CONDITION CAN NOT VIOLATE 0.2 MM
max
SPACING BETWEEN LEAD TIP AND FLAG.
E
MILLIMETERS
DIM MIN
MAX
0.80
0.05
A
A1
A3
b
0.70
0.00
0.20 REF
0.15
C
0.18
0.30
TOP VIEW
D
D2
E
3.00 BSC
0.15
C
1.65
1.85
3.00 BSC
E2
e
K
1.65
0.50 BSC
0.20
0.30
1.85
(A3)
0.10
0.08
C
C
−−−
0.50
L
A
SEATING
PLANE
16 X
SIDE VIEW
A1
C
D2
e
L
16X
EXPOSED PAD
5
8
NOTE 5
4
9
E2
16X K
12
1
16
13
16X b
0.10
0.05
C
C
A
B
BOTTOM VIEW
NOTE 3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NCN4557/D
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