NCN4557 [ONSEMI]

1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter; 1.8 V / 3.0 V双SIM / SAM /智能卡电源和电平转换器
NCN4557
型号: NCN4557
厂家: ONSEMI    ONSEMI
描述:

1.8 V/3.0 V Dual SIM/SAM/Smart Card Power Supply and Level Shifter
1.8 V / 3.0 V双SIM / SAM /智能卡电源和电平转换器

转换器 电平转换器
文件: 总12页 (文件大小:174K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCN4557  
1.8 V/3.0 V Dual SIM/SAM/  
Smart Card Power Supply  
and Level Shifter  
The NCN4557 is a dual interface analog circuit designed to  
translate the voltages between SIM, SAM or Smart Cards and a  
microcontroller (or similar control device). It integrates two LDOs  
for power conversion and three level shifters per channel allowing  
the management of two independent chip cards. The device fulfills  
the ISO7816 and EMV smart card interface requirements as well as  
the GSM and 3G mobile standard. Due to a built−in sequencer, the  
device enables automatic activation and deactivation. Through the  
ENABLE pin a low current shutdown mode can be activated  
extending the battery life.  
http://onsemi.com  
MARKING  
DIAGRAM  
16  
1
QFN16  
MT SUFFIX  
CASE 488AK  
NCN  
4557  
ALYWG  
1
The card power supply voltage (1.8 V or 3.0 V) and the card socket  
A or B are selected using two dedicated pins (SEL0 & SEL1).  
Features  
A
L
Y
W
= Assembly Location  
= Wafer Lot  
= Year  
Supports 1.8 V or 3.0 V Operating SIM/SAM/Smart Cards  
The LDOs are able to Supply more than 50 mA Under 1.8 V and  
3.0 V  
= Work Week  
G or G = Pb−Free Package  
Built−in Active and Passive Pullup Resistor for I/O and  
CRD_IOA/B Pins in Both Directions  
All Pins are Fully ESD Protected According to ISO−7816  
Specifications – ESD Protection on Card Pins in Excess of 8.0 kV  
(JEDEC HBM)  
Built−in Sequencer for Activation and Deactivation  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 11 of this data sheet.  
Supports up to more than 5.0 MHz Clock  
Very Compact Low−Profile 3x3 QFN−16 Package  
These are Pb−Free Devices*  
Applications  
SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones  
Wireless PC/Laptop Cards (PCMCIA Cards)  
POS Terminals (SAM Card Interfaces)  
Smart Card Readers  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 0  
NCN4557/D  
NCN4557  
V
DD  
V
BAT  
1.8 V to 5.5 V  
2.7 V to 5.5 V  
0.1 mF  
0.1 mF  
1.8 V/3 V SIM/Smart Card  
CARD A  
V
3
CC  
1
2
5
6
7
8
GND  
V
4
CC  
V
BAT  
CRD_V  
A
CC  
V
pp  
RST  
CLK  
C4  
2
13  
12  
11  
3
4
V
DD  
I/O  
C8  
ENABLE  
SEL0  
6
5
7
CRD_RSTA  
CRD_CLKA  
CRD_I/OA  
P4  
SEL1  
P3  
1 mF  
1 mF  
17  
9
10  
8
GND  
P2  
P1  
P0  
RST  
CLK  
14  
16  
15  
CRD_I/OB  
CRD_CLKB  
CRD_RSTB  
I/O  
CARD B  
GND  
4
3
8
7
6
5
C8  
I/O  
C4  
CLK  
RST  
2
1
1
V
pp  
CRD_V B  
CC  
GND  
V
CC  
1.8 V/3 V SIM/Smart Card  
Figure 1. Typical Interface Application  
Exposed Pad (EP)  
16 15 14 13  
CRD_V  
B
1
2
3
4
12 SEL0  
11 SEL1  
10 CLK  
CC  
NCN4557  
V
DD  
17  
GND  
V
BAT  
9
RST  
CRD_V  
A
CC  
5
6
7
8
Figure 2. QFN−16 Pinout (Top View)  
http://onsemi.com  
2
NCN4557  
V
BAT  
3
LDO B > 50 mA  
LDO A > 50 mA  
4
1
CRD_V A  
CC  
CRD_V B  
CC  
1.8 V/3.0 V/Enable  
1.8 V/3.0 V/Enable  
CRD_V B  
CC  
CRD_V A  
CC  
16  
15  
5
6
CRD_CLKA  
CRD_RSTA  
CRD_CLKB  
CRD_RSTB  
En  
En  
En  
En  
I/O  
I/O  
DATA DATA  
I/O  
DATA DATA  
I/O  
14  
7 CRD_I/OA  
CRD_I/OB  
14 k  
CRD_V  
14 k  
En  
En  
B
CC  
CRD_V  
A
CC  
13  
10  
9
ENABLE  
CLK  
RST  
I/O  
CONTROL  
LOGIC  
12 SEL0  
MUX  
11 SEL1  
8
SEQUENCING  
18 k  
17  
GROUND  
V
DD  
2
V
DD  
GND  
Figure 3. NCN4557 Block Diagram  
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3
 
NCN4557  
PIN DESCRIPTIONS  
PIN  
Name  
CRD_V  
Type  
Description  
1
B
POWER This pin is connected to the Card power supply pin (C1) (Card B).The corresponding LDO is  
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).  
CC  
CRD_V B can not be active when CRD_V A is active and conversely.  
CC  
CC  
2
V
DD  
POWER This pin is connected to the controller power supply. It configures the level shifter input stage to accept  
the signal coming from the microcontroller. A 0.1 mF capacitor shall be used to bypass the power supply  
voltage. When V is below 1.5 V typical CRD_V A and B are disabled; the NCN4557 comes into a  
DD  
CC  
shutdown mode.  
3
4
V
POWER DC/DC converter power supply input shared by the LDOs A & B. This pin has to be bypassed by a  
BAT  
0.1 mF capacitor.  
CRD_V  
A
POWER This pin is connected to the Card power supply pin (C1) (Card A).The corresponding LDO is  
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).  
CC  
CRD_V A can not be active when CRD_V B is active and conversely.  
CC  
CC  
5
6
7
CRD_CLKA OUTPUT This pin is connected to the clock pin (C3) of the card connector A. The clock (CLK) signal comes from  
the external clock generator (standalone clock source or microcontroller). The internal level shifter  
adapts the voltage levels CLK to CRD_CLKA. An internal active pull− down NMOS device maintains this  
pin to Ground during either the CRD_V A start−up sequence, or when CRD_V A = 0 V.  
CC  
CC  
CRD_RSTA OUTPUT This pin is connected to the RESET pin (C2) of the card connector A. A level translator adapts the  
RESET signal from the microcontroller to the external card A. The output current is internally limited to  
15 mA max. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V A = 0 V  
CC  
and during the corresponding LDO transient phase of power−up.  
CRD_I/OA  
INPUT /  
This pin handles the connection to the serial I/O pin (C7) of the card connector A. A bidirectional level  
OUTPUT translator adapts the serial I/O signal between the card and the micro−controller. A 14 kW (typical)  
pull−up resistor provides a High Impedance state to the card I/O link; during the operating phase, a  
dynamic pull−up circuit is activated making the CRD_I/OA rise time compliant with the ISO7816, EMV,  
GSM and related standards. An internal active pull−down MOS device forces this pin to Ground during  
either the CRD_V A start−up sequence or when CRD_V A = 0 V. The CRD_I/OA pin is internally  
CC  
CC  
limited by a 15 mA max current.  
8
I/O  
INPUT /  
This pin is connected to an external microcontroller or cellular phone management unit (Baseband circuit  
OUTPUT or PMU). A bidirectional level translator adapts the serial I/O signal between the smart card A or B and  
the controller. Only one card, the selected card, communicates through the bidirectional I/O interface. A  
built−in 18 kW typical resistor provides a high impedance state when the interface is not activated. An  
additional dynamic pullup circuit accelerates the I/O rise time making the bidirectional channel perfectly  
balanced in regards to the standard rise time requirements.  
9
RST  
CLK  
INPUT  
The RESET signal present at this pin is connected to the card through the internal level shifter which  
translates the levels according to the CRD_V A or B programmed value.  
CC  
10  
INPUT  
The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max values  
defined by the specification (typically 50%). The built−in level shifter translates the input signal to the  
external card CLK input.  
11  
12  
13  
SEL1  
SEL0  
INPUT  
INPUT  
INPUT  
SEL1 allows the selection of the Card A or B (Table 1).  
SEL1 = Low ! Card A selected  
SEL1 = High ! Card B selected  
SEL0 allows programming CRD_V A or B (1.8 V or 3.0 V) (Table 1).  
CC  
SEL0 = Low ! CRD_V A/B = 1.8 V  
CC  
SEL0 = High ! CRD_V A/B = 3.0 V  
CC  
ENABLE  
Power Up and Down pin:  
ENABLE = Low ! Low current shutdown mode activated  
ENABLE = High ! Normal Operation  
A Low level on this pin switches off the card interface.  
14  
CRD_I/OB  
INPUT /  
This pin handles the connection to the serial I/O pin (C7) of the card connector B. A bidirectional level  
OUTPUT translator adapts the serial I/O signal between the card and the micro−controller. A 14 kW (typical)  
pull−up resistor provides a High Impedance state to the card I/O link; during the operating phase a  
dynamic pull−up circuit is activated making the CRD_I/OB rise time compliant with the ISO7816, EMV,  
GSM and related standards. An internal active pulldown MOS device forces this pin to Ground during  
either the CRD_V B start−up sequence or when CRD_V B = 0 V. The CRD_I/OB pin is internally  
CC  
CC  
limited by a 15 mA maximum current.  
15  
16  
17  
CRD_RSTB OUTPUT This pin is connected to the RESET pin of the card connector B. A level translator adapts the RESET  
signal from the microcontroller to the external card B. The output current is internally limited by a 15 mA  
max current. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V B = 0 V  
CC  
and during the corresponding LDO transient phase of powerup.  
CRD_CLKB OUTPUT This pin is connected to the clock pin (C3) of the card connector B. The clock (CLK) signal comes from  
the external clock generator (standalone clock source or microcontroller). The internal level shifter  
adapts the voltage levels CLK to CRD_CLKB. An internal active pull down NMOS device maintains this  
pin to Ground during either the CRD_V B start−up sequence, or when CRD_V B = 0 V.  
CC  
CC  
GND  
GND  
This pin number is the Exposed Pad which is the electrical Ground of the device. It must be soldered to  
the PCB ground plane.  
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4
NCN4557  
ATTRIBUTES  
Characteristics  
Values  
ESD protection  
Human Body Model (HBM):  
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17) (Note 1)  
All Other Pins (Note 1)  
8 kV  
2 kV  
Machine Model (MM):  
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)  
All Other Pins  
600 V  
200 V  
Charged Device Model (CDM):  
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)  
All Other Pins  
2 kV  
400 V  
Moisture sensitivity (Note 2)  
Flammability Rating  
QFN−16  
Level 1  
Oxygen Index: 28 to 34  
UL 94 V−0 @ 0.125 in  
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
1. Human Body Model (HBM): R =1500 W, C = 100 pF.  
2. For additional information, see Application Note AND8003/D.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
LDO Power Supply Voltage  
V
BAT  
−0.5 V  
6  
BAT  
Power Supply Microcontroller Side  
External Card Power Supply  
Digital Input Pins  
V
−0.5 V 6  
V
DD  
DD  
CRD_V  
−0.5 CRD_V 6  
V
CC  
CC  
V
−0.5 V V + 0.5  
V
in  
in  
DD  
but < 6.0  
5
I
mA  
V
in  
Digital Output Pins  
V
−0.5 V V + 0.5  
out  
out  
out  
DD  
but < 6.0  
I
10  
mA  
V
CRD Output Pins  
V
out  
−0.5 V CRD_V + 0.5  
out  
CC  
but < 6.0  
CRD_I/O & CRD_RST Pins  
CRD_CLK Pin  
I
15 (Internally Limited)  
70 (Internally Limited)  
mA  
out  
QFN−16 Low Profile package  
Power Dissipation @ T = +85°C  
P
450  
90  
mW  
°C/W  
A
D
JA  
Thermal Resistance Junction−to−Air  
Operating Ambient Temperature Range  
Operating Junction Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
R
q
T
A
−40 to +85  
−40 to +125  
+125  
°C  
°C  
°C  
°C  
T
J
T
Jmax  
T
stg  
−65 to + 150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
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5
 
NCN4557  
POWER SUPPLY SECTION (−40°C to +85°C)  
Pin  
3
Symbol  
Rating  
Min  
Typ  
Max  
Unit  
V
V
BAT  
Power Supply  
2.7  
5.5  
3
I
Operating current  
mA  
VBAT  
CRD_V A = 3.0 V, CRD_V B = 0 V, I A & B = 0 mA  
26  
25  
26  
25  
80  
80  
80  
80  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CRD_V A = 1.8 V, CRD_V B = 0 V, I A & B = 0 mA  
CC  
CRD_V A = 0 V, CRD_V B = 3.0 V, I A & B = 0 mA  
CC  
CRD_V A = 0 V, CRD_V B = 1.8 V, I A & B = 0 mA  
CC  
3
2
I
Shutdown current – ENABLE = Low  
Operating Voltage  
3
5.5  
2
mA  
V
VBAT_SD  
V
DD  
1.8  
0.6  
2
I
Operating Current (CLK & RST Low)  
Shutdown Current – ENABLE = Low  
Undervoltage Lockout  
0.1  
mA  
mA  
V
VDD  
2
I
0.05  
1
VDD_SD  
2
V
DD  
1.5  
1,4  
CRD_V A or B 3.0 V Mode, V  
= 3.3 V to 5.5 V, I  
= 2.7 V to 5.5 V, I  
= 0 mA to 50 mA  
= 0 mA to 50 mA  
2.75  
1.65  
3.0  
1.8  
3.25  
1.95  
V
CC  
BAT  
BAT  
CRD_VCC  
CRD_VCC  
1.8 V Mode, V  
1,4  
I
Short –Circuit Current – CRD_V Shorted to GND, T = 25°C  
50  
175  
mA  
ms  
CRD_VCC_SC  
CC  
A
7,13,14  
Channel Turn−on Time  
A or B = 0 mA, ENABLE rise edge to CRD_I/OA or B rise edge  
I
0.8  
2.5  
CC  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are  
applied individually under normal operating conditions and not valid simultaneously.  
DIGITAL INPUT/OUTPUT SECTION CLK, RST, I/O, ENABLE, SEL0, SEL1 (−40°C to + 85°C)  
Pin  
Symbol  
Rating  
Min  
Typ  
Max  
Unit  
9,10  
V
V
High Level Input Voltage (RST, CLK)  
Low Level Input Voltage (RST, CLK)  
0.85 * V  
V
DD  
0.15 * V  
V
IH  
IL  
DD  
DD  
11,12,13  
V
V
High Level Input Voltage (ENABLE, SEL0, SEL1)  
Low Level Input Voltage (ENABLE, SEL0, SEL1)  
0.85 * V  
−1  
V
V
mA  
V
IH  
IL  
DD  
DD  
0.15 * V  
DD  
9,10,11,  
12,13  
I
, I  
IH IL  
Input current (RST, CLK, ENABLE, SEL0, SEL1)  
1
8
V
High Level Output Voltage (CRD_ I/O = CRD_V , I  
=−20 mA)  
0.75 * V  
V
DD  
OH_I/O  
CC OH_I/O  
DD  
V
Low Level Output Voltage (CRD_ I/O = 0 V, I  
= 500 mA)  
0.3  
0.8  
24  
OL_I/O  
OL_I/O  
8
8
t , t  
Rise and Fall times (I/O), C = 30 pF  
ms  
R
F
out  
R
I/0 Pullup Resistor  
12  
18  
kW  
pu_I/O  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are  
applied individually under normal operating conditions and not valid simultaneously.  
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6
NCN4557  
CARD INTERFACE SECTION (−40°C to +85°C)  
Pin  
Symbol  
Rating  
Min  
Typ  
Max  
Unit  
6,15 CRD_RSTA CRD_V = +3 V  
CC  
CRD_RSTB  
Output RESET V @ ICRD_rst = −20 mA  
Output RESET V @ ICRD_rst = +200 mA  
0.9 * CRD_V  
0
CRD_V  
0.3  
V
V
OH  
OL  
CC  
CC  
Output RESET Rise Time @ C = 30 pF  
0.8  
0.8  
ms  
ms  
out  
Output RESET Fall Time @ C = 30 pF  
out  
CRD_V = +1.8 V  
V
V
ms  
ms  
CC  
Output RESET V @ ICRD_rst = −20 mA  
Output RESET V @ ICRD_rst = +200 mA  
Output RESET Rise Time @ C = 30 pF  
0.9 * CRD_V  
0
CRD_V  
0.3  
OH  
OL  
CC  
CC  
0.8  
out  
Output RESET Fall Time @ C = 30 pF  
0.8  
out  
5,16 CRD_CLKA CRD_V = +3 V  
CC  
CRD_CLKB Output Duty Cycle  
Max Output Frequency  
40  
60  
%
MHz  
V
5
0.9 * CRD_V  
0
Output V @ ICRD_clk = −20 mA  
CRD_V  
0.3  
OH  
CC  
CC  
Output V @ ICRD_clk = +200 mA  
V
OL  
Output CRD_CLK Rise Time @ C = 30 pF  
18  
18  
ns  
ns  
out  
Output CRD_CLK Fall Time @ C = 30 pF  
out  
CRD_V = +1.8 V  
Output Duty Cycle  
Max Output Frequency  
CC  
40  
60  
%
MHz  
V
5
0.9 * CRD_V  
0
Output V @ ICRD_clk = −20 mA  
CRD_V  
0.3  
OH  
CC  
CC  
Output V @ ICRD_clk = +200 mA  
V
OL  
Output CRD_CLK Rise Time @ C = 30 pF  
18  
18  
ns  
ns  
out  
Output CRD_CLK Fall Time @ C = 30 pF  
out  
7,14  
CRD_I/OA CRD_V = +3 V  
CC  
CRD_I/OB Output V @ I  
= −20 mA, V =V  
DD  
0.8 * CRD_V  
0
CRD_V  
0.4  
V
V
OH  
CRD_IO  
I/O  
CC  
CC  
Output V @ I  
= +1 mA, V = 0V  
OL  
CRD_IO  
I/O  
CRD_I/O Rise Time @ C = 30pF  
0.8  
0.8  
ms  
ms  
out  
CRD_I/O Fall Time @ C = 30 pF  
out  
CRD_V = +1.8 V  
CC  
Output V @ I  
= −20 mA, V = V  
0.8 * CRD_V  
0
CRD_V  
0.3  
V
V
OH  
CRD_IO  
I/O  
DD  
CC  
CC  
Output V @ I  
= +1 mA, V = 0 V  
OL  
CRD_IO  
I/O  
CRD_I/O Rise Time @ C = 30 pF  
0.8  
0.8  
ms  
ms  
out  
CRD_I/O Fall Time @ C = 30 pF  
out  
Short−Circuit Current, V = 0 V  
4
15  
18  
mA  
I/O  
8
R
Card I/O Pullup Resistor  
10  
14  
kW  
pu_CRD_I/O  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are  
applied individually under normal operating conditions and not valid simultaneously.  
3. All the dynamic specifications (AC specifications) are guaranteed by design over the operating temperature range.  
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7
NCN4557  
TYPICAL CHARACTERISTICS  
30  
28  
26  
24  
1.2  
1.0  
0.8  
0.6  
0.4  
−40°C  
25°C  
Drop−out  
CRD_V A/B = 3.0 V  
CC  
85°C  
CRD_V A/B = 1.8 V  
CC  
22  
20  
0.2  
0
2.7  
3.1  
3.5  
3.9  
4.3  
(V)  
4.7  
5.1  
5.5  
2.7  
3.1  
3.5  
3.9  
4.3  
(V)  
4.7  
5.1  
5.5  
V
BAT  
V
BAT  
Figure 4. IBAT Operating Current vs. VBAT  
,
Figure 5. IBAT Shutdown Current vs. VBAT  
TA = 25°C, ICC = 0 mA  
50  
40  
30  
20  
10  
0
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8  
Y AXIS LABEL (UNIT)  
Figure 7. Activation Sequence, Ch1 : CRD_VCC  
,
Figure 6. IVDD Shutdown Current vs. VDD  
,
Ch2 : CRD_IO, Ch4 : CRD_RST, Ch3 : CRD_CLK  
TA = 25°C, VBAT = 5.5 V  
Figure 8. Automatic Deactivation  
Ch4: CRD_RST, Ch3: CRD_CLK, Ch2: CRD_IO,  
Ch1: CRD_VCC  
http://onsemi.com  
8
 
NCN4557  
APPLICATION INFORMATION  
Card Supply Converter  
The NCN4557 is a dual LDO−based DC/DC converter  
and level shifter able to handle independently 2 smart card  
interfaces. When one of these interfaces is operating the  
other one is not active and conversely. Class B (3.0 V) and  
C (1.8 V) cards can be used.  
The built−it NCN4557 DC/DC converters are Low  
Drop−Out Voltage Regulators capable to supply a current  
in excess of 50 mA under 1.8 V or 3.0 V. These voltages are  
selected according to Table 1. Using the Boolean input  
ENABLE pin the NCN4557 device can be disabled setting  
the circuit in a shutdown mode for which the power  
consumption features values typically in the range of a few  
tens of nA. Figure 9 shows a simplified view of the  
The Card and the CRD_V power supply are selected  
CC  
using the pins SEL0, SEL1 and ENABLE according to  
Table 1.  
Table 1. CARD AND CRD_VCC SELECTION  
NCN4557 voltage regulator. The CRD_V  
output is  
CC  
internally current limited and protected against short  
ENABLE  
SEL1  
SEL0  
Card# / CRD_V  
CC  
circuits. The short−circuit current IV varies with V  
typically in the range of 30 mA to 60 mA.  
CC  
BAT  
1
1
1
1
0
0
0
1
1
X
0
1
0
1
X
Card A / 1.8 V  
Card A / 3.0 V  
Card B / 1.8 V  
Card B / 3.0 V  
A & B Disabled  
In order to guarantee a stable and satisfying operating of  
the LDO the CRD_V output will be connected to a  
CC  
1.0 mF bypass ceramic capacitor to the ground. At the  
input, V will be bypassed to the ground with a 0.1 mF  
BAT  
ceramic capacitor.  
V
BAT  
CRD_V  
CC  
I
lim  
Q1  
R1  
+
C
in  
= 0.1 mF  
Cout = 1.0 mF  
+
R2  
V
ref  
ENABLE  
GND  
Figure 9. Simplified Block Diagram of the LDO  
Voltage Regulator  
Level Shifters  
The level shifters accommodate the voltage difference  
that might exist between the microcontroller and the smart  
card. The RESET and CLOCK level shifters are  
mono−directional and feature both the same architecture.  
controller and the card in both directions. In addition with  
the pull−up resistor, a dynamic pullup circuit (Figure 10,  
Q1 and Q2) provides a fast charge of the stray capacitance,  
yielding a rise time fully within the ISO7816, EMV and  
GSM specifications.  
The bidirectional I/O line provides  
a way to  
automatically adapt the voltage difference between the  
http://onsemi.com  
9
 
NCN4557  
CRD_V  
V
DD  
CC  
Q1  
Q2  
18 k  
14 k  
200 ns  
200 ns  
I/O  
CRD_I/O  
GND  
Q3  
LOGIC  
IO/CONTROL  
GND  
Figure 10. Basic I/O line Interface  
The typical waveform provided in Figure 11 shows how  
the accelerator operates. During the first 200 ns (typical),  
the slope of the rise time is solely a function of the pullup  
resistor associated with the stray capacitance. During this  
period, the PMOS devices are not activated since the input  
3.0 V). Figure 7 shows the typical NCN4557 activation  
sequence.  
About 800 ms after CRD_V has reached its nominal  
CC  
voltage value, CRD_IO and CRD_RST are released.  
CRD_CLK is enabled during the rising slope of the  
second clock cycle after CRD_IO and CRD_RST are  
enabled.  
voltage is below their V threshold. When the input slope  
gs  
crosses the V , the opposite one shot is activated,  
gsth  
providing a low impedance to charge the capacitance, thus  
increasing the rise time as depicted in Figure 11. The same  
mechanism applies for the opposite side of the line to make  
sure the system is optimum.  
ENABLE  
CRD_V A/B  
CC  
CRD_IOA/B  
CRD_RSTA/B  
CRD_CLKA/B  
T
ON  
~ 0.9 ms  
2nd Rise Edge After  
CRD_IOA/B Rising  
Figure 12. NCN4557 Power−Up  
In all cases the application software is responsible for the  
smart card signal sequence (contact activation sequence,  
cold reset and warm reset sequences).  
Figure 11. CRD_IO Typical Rise and Fall Times  
with Stray Capacitance > 30 pF  
Powerdown Sequence  
The NCN4557 provides a powerdown sequence which is  
activated by setting the ENABLE Boolean signal LOW.  
The communication I/O session is terminated immediately  
according to the ISO7816 and EMV specifications as  
depicted in Figures 8 and 13.  
(33 pF capacitor connected on the board)  
Powerup Sequence  
The powerup sequence makes sure all the card−related  
signals are LOW during the CRD_V  
positive going  
CC  
ISO7816 Sequence:  
slope. The Powerup sequence is activated by setting the  
ENABLE Boolean signal HIGH. CRD_RST, CRD_CLK  
and CRD_I/O are maintained LOW during the activation  
CRD_RST is forced to LOW  
CRD_CLK is forced to LOW 2 clock cycles after  
stage until CRD_V reaches its nominal value (1.8 V or  
CC  
ENABLE is set LOW unless CRD_CLK is already in  
http://onsemi.com  
10  
 
NCN4557  
Shutdown Operating  
this state or 8 ms after the ENABLE pin is set LOW in  
In order to save power or for other purpose required by  
the application it is possible to put the NCN4557 in a  
shutdown mode by setting LOW the pin ENABLE. On the  
other hand the device enters automatically in a shutdown  
the other cases.  
CRD_I/O is forced to LOW about 8 ms after the  
ENABLE pin is set LOW.  
Then CRD_V Supply Shuts Off  
CC  
mode when V becomes lower than 1.0 V typically.  
DD  
ESD Protection  
ENABLE  
The NCN4557 CRD interface features an Human Body  
Model ESD voltage protection in excess of 8 kV for all the  
CRD_RSTA/B  
CRD_CLKA/B  
CRD pins (CRD_IOA  
& B, CRD_CLKA & B,  
CRD_RSTA & B, CRD_V A & B and GND). All the  
CC  
CRD_IOA/B  
other pins (microcontroller side) sustain at least 2 kV.  
These values are guaranteed for the device in its full  
integrity without considering the external capacitors added  
to the circuit for a proper operating. Consequently in the  
operating conditions it is able to sustain much more than  
8 kV on its CRD pins making it perfectly protected against  
electrostatic discharge well over the Human Body Model  
ESD voltages required by the ISO7816 standard (4 kV).  
CRD_V A/B  
CC  
T
OFF  
~ 8.0 ms  
Figure 13. NCN4557 Power Down Sequence  
Input Schmitt Triggers  
All the logic input pins (excepted I/O and CRD_I/O,  
Figure 3) have built−in Schmitt trigger circuits to prevent  
the NCN4557 against uncontrolled operation. The typical  
dynamic characteristics of the related pins are depicted in  
Figure 14.  
Printed Circuit Board Layout  
Careful layout routing will be applied to achieve a good  
and efficient operating of the device in its mobile or  
portable environment and fully exploit its performance.  
The bypass capacitors have to be connected as close as  
OUTPUT  
possible to the device pins (CRD_V A and B, V or  
CC  
DD  
V ) in order to reduce as much as possible parasitic  
BAT  
behaviors (ripple and noise). It is recommended to use  
ceramic capacitors.  
V
DD  
The exposed pad of the QFN−16 package will be  
connected to the ground. A relatively large ground plane is  
recommended.  
ON  
OFF  
INPUT  
0.2 x V  
or  
0.7 x V  
DD  
DD  
0.4 V  
Figure 14. Typical Schmitt Trigger Characteristics  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCN4557MTG  
QFN−16  
(Pb−Free)  
123 Units / Rail  
NCN4557MTR2G  
QFN−16  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
11  
 
NCN4557  
PACKAGE DIMENSIONS  
QFN16 3*3*0.75 MM, 0.5 P  
CASE 488AK−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
D
A
B
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
PIN 1  
LOCATION  
5.  
L
CONDITION CAN NOT VIOLATE 0.2 MM  
max  
SPACING BETWEEN LEAD TIP AND FLAG.  
E
MILLIMETERS  
DIM MIN  
MAX  
0.80  
0.05  
A
A1  
A3  
b
0.70  
0.00  
0.20 REF  
0.15  
C
0.18  
0.30  
TOP VIEW  
D
D2  
E
3.00 BSC  
0.15  
C
1.65  
1.85  
3.00 BSC  
E2  
e
K
1.65  
0.50 BSC  
0.20  
0.30  
1.85  
(A3)  
0.10  
0.08  
C
C
−−−  
0.50  
L
A
SEATING  
PLANE  
16 X  
SIDE VIEW  
A1  
C
D2  
e
L
16X  
EXPOSED PAD  
5
8
NOTE 5  
4
9
E2  
16X K  
12  
1
16  
13  
16X b  
0.10  
0.05  
C
C
A
B
BOTTOM VIEW  
NOTE 3  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any  
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over  
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under  
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,  
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of  
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NCN4557/D  

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