NCP136 [ONSEMI]

LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA;
NCP136
型号: NCP136
厂家: ONSEMI    ONSEMI
描述:

LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA

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LDO Regulator - Very Low  
Dropout, CMOS, Bias Rail  
700 mA  
NCP136  
The NCP136 is a 700 mA VLDO equipped with NMOS pass  
transistor and a separate bias supply voltage (V  
). The device  
BIAS  
www.onsemi.com  
provides very stable, accurate output voltage with low noise suitable  
for space constrained, noise sensitive applications. In order to  
optimize performance for battery operated portable applications, the  
NCP136 features low I consumption. The WLCSP6 1.4 mm x  
Q
0.8 mm Chip Scale package is optimized for use in space constrained  
applications.  
WLCSP6, 1.4x0.8x0.33  
CASE 567XK  
WLCSP6, 1.4x0.8x0.37  
CASE 567YU  
Features  
Input Voltage Range: V  
to 5.5 V  
OUT  
Bias Voltage Range: 2.5 V to 5.5 V  
MARKING DIAGRAM  
Fixed or Adjustable Voltage Version Available  
Output Voltage Range: 0.4 V to 1.8 V (Fixed)  
XXMG  
1% Accuracy over Temperature, 0.5% V  
@ 25°C  
OUT  
Ultra−Low Dropout: Typ. 40 mV at 700 mA  
Very Low Bias Input Current of Typ. 80 mA  
Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA  
Logic Level Enable Input for ON/OFF Control  
Output Active Discharge Option Available  
Stable with a 10 mF Ceramic Capacitor  
XX = Specific Device Code  
M
G
= Month Code  
= Pb−Free Package  
PIN CONNECTIONS  
Available in WLCSP6 − 1.4 mm x 0.8 mm, 0.4 mm pitch Package  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
A
B
C
OUT  
IN  
Typical Applications  
Battery−powered Equipment  
Smartphones, Tablets  
Cameras, DVRs, STB and Camcorders  
SNS/ADJ  
EN  
VBIAS  
GND  
BIAS  
C
BIAS  
1 mF  
VOUT  
BIAS  
OUT  
SNS  
V
IN  
Top View  
NCP136FIX  
IN  
COUT  
10 mF  
EN  
C
4.7 mF  
IN  
GND  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 12 of this data sheet.  
ON  
OFF  
Figure 1. Typical Application Schematic − Fixed Voltage Version  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
July, 2020 − Rev. 4  
NCP136/D  
NCP136  
VBIAS  
CBIAS  
1 mF  
VOUT  
BIAS  
IN  
OUT  
V
IN  
NCP136  
0.4 V  
R1  
R2  
CFF  
ADJ  
COUT  
10 mF  
EN  
C
IN  
GND  
4.7 mF  
ON  
OFF  
Figure 2. Typical Application Schematic − Adjustable Voltage Version  
CURRENT  
LIMIT  
OUT  
IN  
ENABLE  
BLOCK  
150 W  
EN  
*Active  
DISCHARGE  
BIAS  
UVLO  
VOLTAGE  
+
REFERENCE  
THERMAL  
LIMIT  
SNS/ADJ  
GND  
*Active output discharge function is present only in NCP136A and NCP136C option devices.  
Figure 3. Simplified Schematic Block Diagram  
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2
NCP136  
PIN FUNCTION DESCRIPTION  
Pin No.  
WLCSP6  
Pin Name  
Description  
A1  
OUT  
Regulated Output Voltage pin  
Input Voltage Supply pin  
A2  
IN  
B1  
SNS/ADJ  
EN  
Feedback / adjustable input pin (connect this pin directly to the OUT pin or to the resistor divider)  
B2  
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into  
shutdown mode.  
C1  
C2  
GND  
BIAS  
Ground pin  
Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage  
Lockout Circuit.  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Input Voltage (Note 1)  
V
IN  
−0.3 to 6  
Output Voltage  
V
OUT  
−0.3 to (V +0.3) 6  
V
IN  
Chip Enable, Bias and SNS Input  
Output Short Circuit Duration  
Maximum Junction Temperature  
Storage Temperature  
V
V
V
−0.3 to 6  
unlimited  
150  
V
EN, BIAS, SNS/ADJ  
t
s
SC  
T
J
°C  
°C  
V
T
−55 to 150  
2000  
STG  
ESD Capability, Human Body Model (Note 2)  
ESD Capability, Machine Model (Note 2)  
ESD  
HBM  
ESD  
200  
V
MM  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:  
ESD Human Body Model tested per EIA/JESD22−A114  
ESD Machine Model tested per EIA/JESD22−A115  
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Thermal Characteristics, WLCSP6 1.4 mm x 0.8 mm  
Thermal Resistance, Junction−to−Air (Note 3)  
RqJA  
69  
°C/W  
3. This junction−to−ambient thermal resistance under natural convection was derived by thermal simulations based on the JEDEC JESD51  
series standards methodology. Only a single device mounted at the center of a high_K (2s2p) 80 mm x 80 mm multilayer board with 1−ounce  
internal planes and 2−ounce copper on top and bottom. Top copper layer has a dedicated 1.6 sqmm copper area.  
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3
 
NCP136  
ELECTRICAL CHARACTERISTICS −40°C T 85°C; V  
= 2.7 V or (V  
+ 1.6 V), whichever is greater,  
= 1 mF, unless otherwise noted.  
J
BIAS  
OUT  
V
= V  
+ 0.3 V, I  
= 1 mA, V = 1 V, C = 4.7 mF, C  
= 10 mF, C  
IN  
OUT(NOM)  
OUT  
EN  
IN  
OUT  
BIAS  
Typical values are at T = +25°C. Min/Max values are for −40°C T 85°C unless otherwise noted. (Note 4)  
J
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ Max Unit  
Operating Input Voltage  
Range  
V
V
+
5.5  
V
V
V
IN  
OUT  
V
DO  
Operating Bias Voltage  
Range  
V
BIAS  
(V  
+
5.5  
OUT  
1.50) 2.5  
Undervoltage Lock−out  
V
Rising  
UVLO  
1.6  
0.2  
BIAS  
Hysteresis  
Output Voltage Accuracy  
Output Voltage Accuracy  
V
V
0.5  
%
%
OUT  
−40°C T 85°C, V  
+ 0.1 V V V  
OUT(NOM)  
−1.0  
+1.0  
J
OUT(NOM)  
IN  
OUT  
+ 1.0 V, 2.7 V or (V  
+ 1.6 V), whichever is  
OUT(NOM)  
greater < V  
< 5.5 V, 1 mA < I  
< 700 mA  
BIAS  
OUT  
V
V
Line Regulation  
V
+ 0.1 V V 5.0 V  
Line  
Line  
0.01  
0.01  
%/V  
%/V  
IN  
OUT(NOM)  
IN  
Reg  
Line Regulation  
2.7 V or (V  
+ 1.6 V), whichever is greater <  
BIAS  
OUT(NOM)  
< 5.5 V  
Reg  
V
BIAS  
Load Regulation  
I
I
I
= 1 mA to 700 mA  
= 700 mA (Note 5)  
Load  
1.5  
40  
mV  
mV  
V
OUT  
OUT  
OUT  
Reg  
V
V
Dropout Voltage  
V
V
60  
IN  
DO  
Dropout Voltage  
= 700 mA, V = V  
(Notes 5, 6)  
1.1  
1.5  
BIAS  
IN  
BIAS  
DO  
CL  
Output Current Limit  
V
= 90% V  
I
800  
1450 2000  
mA  
mA  
OUT  
OUT(NOM)  
SNS/ADJ Pin Operating  
Current  
I
0.1  
0.5  
SNS  
Bias Pin Quiescent  
Current  
V
BIAS  
= 2.7 V, I  
= 0 mA  
I
70  
110  
mA  
OUT  
BIASQ  
Bias Pin Disable Current  
Input Pin Disable Current  
EN Pin Threshold Voltage  
V
V
0.4 V  
0.4 V  
I
0.5  
0.5  
1
1
mA  
mA  
V
EN  
BIAS(DIS)  
I
EN  
VIN(DIS)  
EN Input Voltage “H”  
EN Input Voltage “L”  
V
EN(H)  
0.9  
V
EN(L)  
0.4  
1
EN Pull Down Current  
V
V
= 5.5 V  
I
0.3  
75  
mA  
EN  
EN  
Power Supply Rejection  
Ratio  
to V  
, f = 1 kHz, I  
+0.5 V, V  
= 10 mA,  
= 1.2 V,  
PSRR(V )  
IN  
dB  
IN  
OUT  
OUT  
OUT(NOM)  
VIN V  
OUT  
V
BIAS  
= 3.0 V  
V
to V  
OUT  
= 3.0 V  
, f = 1 kHz, I  
= 10 mA,  
= 1.2 V,  
PSRR(V )  
BIAS  
80  
40  
dB  
BIAS  
OUT  
OUT  
VIN V  
+0.5 V, V  
OUT(NOM)  
V
BIAS  
Output Noise Voltage  
V
V
= V  
+0.5 V, f = 10 Hz to 100 kHz,  
= 1.2 V  
V
N
mV  
RMS  
IN  
OUT  
OUT(NOM)  
Thermal Shutdown  
Threshold  
°C  
Temperature increasing  
Temperature decreasing  
160  
140  
150  
Output Discharge  
Pull−Down  
V
0.4 V, V  
= 0.5 V,  
R
DISCH  
W
EN  
OUT  
NCP136A and NCP136C option  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.  
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.  
5. Dropout voltage is characterized when V  
6. For fixed output voltages below 1.5 V, V  
falls 3% below V  
.
OUT  
BIAS  
OUT(NOM)  
dropout does not apply due to a minimum Bias operating voltage of 2.5 V.  
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4
 
NCP136  
ELECTRICAL CHARACTERISTICS 40°C TJ 85°C; I  
= 1 mA, V = 1 V, C = 4.7 μF, C  
= 10 μF, C = 1 μF.  
BIAS  
OUT  
EN  
IN  
OUT  
Typical values are at T = +25°C. Min/Max values are for 40°C T 85°C unless otherwise noted. (Note 7)  
J
J
Parameter  
Test conditions  
= 3 V, V = 0.6 V  
Symbol  
Min  
Typ  
Max  
Unit  
NCP136xFCRC040T2G V  
BIAS  
IN  
Delay time  
From assertion of V to  
output voltage increase  
‘A’ option  
t
t
t
t
t
73  
ms  
EN  
DELAY  
Rise time  
V
rise from 10% to 90% V  
‘A’ option  
‘A’ option  
t
RISE  
15  
98  
OUT  
OUT(NOM)  
Turn−On Time  
From assertion of V to  
t
ON  
EN  
= 98% V  
OUT(NOM)  
V
OUT  
NCP136xFCT080T2G & NCP136xFCRC080T2G V  
= 3 V, V = 1.0 V  
IN  
BIAS  
Delay time  
From assertion of V to  
‘A’ and ‘B’ option  
55  
ms  
ms  
ms  
ms  
ms  
EN  
DELAY  
output voltage increase  
Rise time  
V
OUT  
rise from 10% to 90% V  
‘A’ and ‘B’ option  
‘A’ and ‘B’ option  
t
RISE  
17  
80  
OUT(NOM)  
Turn−On Time  
From assertion of V to  
t
ON  
EN  
= 98% V  
OUT(NOM)  
V
OUT  
NCP136xFCT088T2G V  
= 3 V, V = 1.1 V  
IN  
BIAS  
Delay time  
From assertion of V to  
‘A’ option  
71  
EN  
DELAY  
output voltage increase  
Rise time  
V
OUT  
rise from 10% to 90% V  
‘A’ option  
‘A’ option  
t
RISE  
16  
97  
OUT(NOM)  
Turn−On Time  
From assertion of V to  
t
ON  
EN  
= 98% V  
OUT(NOM)  
V
OUT  
NCP136xFCT105T2G V  
= 3 V, V = 1.25 V  
IN  
BIAS  
Delay time  
From assertion of V to  
‘A’ option  
71  
EN  
DELAY  
output voltage increase  
Rise time  
V
OUT  
rise from 10% to 90% V  
‘A’ option  
‘A’ option  
t
RISE  
18  
OUT(NOM)  
Turn−On Time  
From assertion of V to  
t
102  
EN  
= 98% V  
OUT(NOM)  
ON  
V
OUT  
NCP136xFCT110T2G V  
= 3 V, V = 1.3 V  
IN  
BIAS  
Delay time  
From assertion of V to  
‘A’ option  
71  
EN  
DELAY  
output voltage increase  
Rise time  
V
OUT  
rise from 10% to 90% V  
‘A’ option  
‘A’ option  
t
RISE  
19  
OUT(NOM)  
Turn−On Time  
From assertion of V to  
t
105  
EN  
= 98% V  
OUT(NOM)  
ON  
V
OUT  
NCP136xFCT120T2G V  
= 3 V, V = 1.4 V  
IN  
BIAS  
Delay time  
From assertion of V to  
‘A’ option  
‘C’ option  
‘A’ option  
‘C’ option  
‘A’ option  
‘C’ option  
t
70  
80  
EN  
ON  
output voltage increase  
Rise time  
V
OUT  
rise from 10% to 90% V  
t
RISE  
21  
OUT(NOM)  
80  
Turn−On Time  
From assertion of V to  
t
108  
210  
EN  
= 98% V  
OUT(NOM)  
ON  
V
OUT  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.  
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.  
www.onsemi.com  
5
 
NCP136  
TYPICAL CHARACTERISTICS  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.8 V, V = V  
, V  
OUT(NOM)  
= 1.2 V, I  
= 700 mA,  
J
IN  
OUT(NOM)  
BIAS  
EN  
BIAS  
OUT  
C
= 4.7 mF, C  
= 1 mF, and C = 10 mF (effective capacitance), unless otherwise noted.  
OUT  
IN  
BIAS  
70  
60  
50  
40  
30  
20  
10  
0
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
T = 85°C  
J
T = −40°C  
J
T = 25°C  
J
T = 25°C  
J
T = −40°C  
J
T = 85°C  
J
0
0
100 200 300 400 500 600 700  
OUTPUT CURRENT (mA)  
0.5  
1.5  
2.5  
− V  
3.5  
4.5  
I
V
BIAS  
(V)  
OUT  
OUT,  
Figure 4. VIN Dropout Voltage vs. IOUT and TJ  
Figure 5. VIN Dropout Voltage  
vs. VBIAS − VOUT and TJ  
1500  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = −40°C  
J
1400  
1300  
1200  
1100  
1000  
900  
T = 25°C  
J
T = 85°C  
J
T = −40°C  
J
T = 25°C  
J
T = 85°C  
J
800  
0
100 200 300 400 500 600 700  
0.1  
1
10  
100  
1000  
I
OUTPUT CURRENT (mA)  
I
OUT,  
OUTPUT CURRENT (mA)  
OUT,  
Figure 6. VBIAS Dropout Voltage vs. IOUT and TJ  
Figure 7. BIAS Pin Current vs. IOUT and TJ  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
V
V
= 1.7 V + 100 mV  
PP  
IN  
= 3 V  
BIAS  
C
= 10 mF  
OUT  
30  
20  
10  
0
T = −40°C  
J
I
= 10 mA  
OUT  
T = 25°C  
J
I
= 700 mA  
OUT  
T = 85°C  
J
2
2.5  
3
3.5  
4
4.5  
5
10  
100  
1k  
10k  
100k  
1M  
10M  
V
BIAS,  
BIAS VOLTAGE (V)  
f, FREQUENCY [Hz]  
Figure 8. BIAS Pin Current vs. VBIAS and TJ  
Figure 9. VIN PSRR vs. Frequency  
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6
NCP136  
TYPICAL CHARACTERISTICS (continued)  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.8 V, V = V  
, V  
OUT(NOM)  
= 1.2 V, I  
= 700 mA,  
J
IN  
OUT(NOM)  
BIAS  
EN  
BIAS  
OUT  
C
= 4.7 mF, C  
= 1 mF, and C = 10 mF (effective capacitance), unless otherwise noted.  
OUT  
IN  
BIAS  
10  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
V
= 1.7 V  
V
V
= 1.7 V  
IN  
BIAS  
IN  
BIAS  
= 3 V + 100 mV  
= 2.8 V  
PP  
C
= 10 mF  
C
= 10 mF  
OUT  
OUT  
1
0.1  
I
= 10 mA  
I
= 1 mA  
0.01  
OUT  
OUT  
I
= 700 mA  
I
= 700 mA  
OUT  
OUT  
0.001  
10  
100  
1k  
10k  
100k  
1M  
10M  
10  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY [Hz]  
f, FREQUENCY [Hz]  
Figure 10. VBIAS PSRR vs. Frequency  
Figure 11. Output Voltage Spectral  
Noise Density vs. Frequency  
V
OUT  
V
OUT  
700 mA  
700 mA  
I
1 mA  
OUT  
I
1 mA  
OUT  
200 ms/div  
500 ms/div  
Figure 12. Load Transient Response,  
OUT = 1 mA to 700 mA in 1 ms, COUT = 10 mF  
Figure 13. Load Transient Response,  
IOUT = 1 mA to 700 mA in 1 ms, COUT = 47 mF  
I
V
OUT  
V
OUT  
350 mA  
350 mA  
I
I
OUT  
1 mA  
OUT  
1 mA  
100 ms/div  
100 ms/div  
Figure 14. Load Transient Response,  
OUT = 1 mA to 350 mA in 1 ms, COUT = 4.7 mF  
Figure 15. Load Transient Response,  
OUT = 1 mA to 350 mA in 1 ms, COUT = 10 mF  
I
I
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7
NCP136  
TYPICAL CHARACTERISTICS (continued)  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.8 V, V = V  
, V  
OUT(NOM)  
= 1.2 V, I  
= 700 mA,  
J
IN  
OUT(NOM)  
BIAS  
EN  
BIAS  
OUT  
C
= 4.7 mF, C  
= 1 mF, and C  
= 10 mF (effective capacitance), unless otherwise noted.  
IN  
BIAS  
OUT  
V
EN  
V
OUT  
V
OUT  
I
OUT  
V
V
V
= 1.4 V  
IN  
350 mA  
= 3 V  
BIAS  
= 1.2 V  
OUT(NOM)  
I
OUT  
1 mA  
20 ms/div  
400 ms/div  
Figure 16. Load Transient Response,  
Figure 17. Enable Transient Response, COUT = 10 mF,  
IOUT = 1 mA to 350 mA in 1 ms, COUT = 47 mF  
IOUT = 700 mA − A Option (Normal)  
V
EN  
V
EN  
V
OUT  
I
OUT  
V
V
V
= 1.4 V  
IN  
= 3 V  
BIAS  
= 1.2 V  
OUT(NOM)  
V
OUT  
20 ms/div  
50 ms/div  
Figure 18. Enable Transient Response, COUT = 10 mF,  
OUT = 0 mA − A Option (Normal)  
Figure 19. Enable Transient Response,  
OUT = 10 mF, IOUT = 700 mA − C Option (Slow)  
I
C
3.8 V  
V
EN  
V
BIAS  
2.8 V  
V
OUT  
V
OUT  
50 ms/div  
10 ms/div  
Figure 20. Enable Transient Response,  
Figure 21. BIAS Line Transient Response,  
COUT = 10 mF, IOUT = 0 mA − C Option (Slow)  
VBIAS = 2.8 V to 3.8 V in 5 ms  
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8
NCP136  
TYPICAL CHARACTERISTICS (continued)  
At T = +25°C, V = V  
+ 0.3 V, V  
= 2.8 V, V = V  
, V  
OUT(NOM)  
= 1.2 V, I  
= 700 mA,  
J
IN  
OUT(NOM)  
BIAS  
EN  
BIAS  
OUT  
C
= 4.7 mF, C  
= 1 mF, and C  
= 10 mF (effective capacitance), unless otherwise noted.  
IN  
BIAS  
OUT  
2.5 V  
1.5 V  
V
IN  
V
OUT  
10 ms/div  
Figure 22. IN Line Transient Response,  
V
IN = 1.5 V to 2.5 V in 5 ms  
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9
NCP136  
APPLICATIONS INFORMATION  
VBAT  
NCP136  
EN  
Switch−mode DC/DC  
= 1.5 V  
1.2 V  
OUT  
SNS  
V
OUT  
BIAS  
1.5 V  
LX  
FB  
LOAD  
IN  
IN  
GND  
EN  
Processor  
GND  
I/O  
I/O  
To other circuits  
Figure 23. Typical Application: Low−Voltage DC/DC Post−Regulator with ON/OFF Functionality  
Input and Output Capacitors  
The NCP136 dual−rail very low dropout voltage regulator  
is using NMOS pass transistor for output voltage regulation  
The NCP136 device is designed to be stable for ceramic  
output capacitors with Effective capacitance in the range  
from 4.7 mF to 47 mF. The device is also stable with multiple  
capacitors in parallel, having the total effective capacitance  
in the specified range.  
from V voltage. All the low current internal control  
IN  
circuitry is powered from the V  
voltage.  
BIAS  
The use of an NMOS pass transistor offers several  
advantages in applications. Unlike PMOS topology devices,  
the output capacitor has reduced impact on loop stability.  
Vin to Vout operating voltage difference can be very low  
compared with standard PMOS regulators in very low Vin  
applications.  
The NCP136 offers smooth monotonic start-up. The  
controlled voltage rising limits the inrush current.  
The Enable (EN) input is equipped with internal  
hysteresis. NCP136 Voltage linear regulator Fixed version  
is available.  
In applications where no low input supplies impedance  
available (PCB inductance in V and/or V  
inputs as  
IN  
BIAS  
example), the recommended C = 1 mF and C  
= 0.1 mF  
IN  
BIAS  
or greater. Ceramic capacitors are recommended. For the best  
performance all the capacitors should be connected to the  
NCP136 respective pins directly in the device PCB copper  
layer, not through vias having not negligible impedance.  
When using small ceramic capacitor, their capacitance is  
not constant but varies with applied DC biasing voltage,  
temperature and tolerance. The effective capacitance can be  
much lower than their nominal capacitance value, most  
importantly in negative temperatures and higher LDO  
output voltages. That is why the recommended Output  
capacitor capacitance value is specified as Effective value in  
the specific application conditions.  
Dropout Voltage  
Because of two power supply inputs V and V  
and  
IN  
BIAS  
one V  
regulator output, there are two Dropout voltages  
OUT  
specified.  
The first, the V Dropout voltage is the voltage  
IN  
difference (V – V  
) when V  
starts to decrease by  
IN  
OUT  
OUT  
percent specified in the Electrical Characteristics table.  
is high enough; specific value is published in the  
V
BIAS  
Electrical Characteristics table.  
The second, V dropout voltage is the voltage  
BIAS  
difference (V  
– V  
) when V and V  
pins are  
BIAS  
OUT  
IN  
BIAS  
joined together and V  
starts to decrease.  
OUT  
www.onsemi.com  
10  
NCP136  
VBIAS  
CBIAS  
1 mF  
VOUT  
BIAS  
IN  
OUT  
VIN  
NCP136  
0.4 V  
R1  
R2  
CFF  
ADJ  
COUT  
10 mF  
EN  
CIN  
4.7 mF  
GND  
ON  
OFF  
Figure 24. Typical Application Schematic − Adjustable  
Output Voltage Adjustment  
c. R = R = 51 kW  
1
2
The required output voltage can be adjusted from 0.4 V to  
1.8 V using two external resistors. Typical application  
schematics is shown in Figure 24. Output voltage is  
calculated according to equation 1. Generally, any voltage  
option can used as adjustable, in the equation below  
V
= 0.4 (1 + 51 kW/51 kW ) +  
OUT−ADJ  
100 nA 51 kW = 0.8051 V  
Error − 0.63%  
It is recommended to keep the total resistance of resistors  
(R1 + R2) no greater than a few hundred kW. If total  
resistance is too big the dynamic performance could get  
worse due to PCB parasitic capacitance. Big resistors value  
in combination with parasitic capacitance create low−pass  
filter and virtually slow−down LDO control loop.  
V
V
is requested voltage and V  
as reference voltage. When resistor’s value is in kW  
is nominal  
OUT−ADJ  
OUT_NOM  
OUT  
range last term (I  
R ) can be omitted because its effect  
ADJ  
1
on output voltage accuracy is negligible. In other cases it  
should be consider especially when tight output voltage  
accuracy is requested.  
Output Voltage Example:  
(Note 1)  
(Note 1)  
V
(V)  
R (kW)  
1
R (kW)  
2
C
(nF)  
FF  
R1  
R2  
OUT  
@ ǒ1 ) Ǔ  
VOUT*ADJ + VOUT_NOM  
) IADJ @ R1  
(eq. 1)  
0.80  
1.05  
1.10  
5.1  
5.1  
5.6  
3.9  
8.2  
2.4  
4.7  
5.6  
5.6  
Voltage Calculation Example − V  
= 0.8 V:  
OUT  
a. R = R = 5.1 kW, no (I × R )  
1
V
2
FB  
1
1. To increase power efficiency, current flows through resistor  
divider can be reduced by multiply all resistor values by 10.  
= 0.4 (1 + 5.1 kW/5.1 kW ) = 0.8 V  
OUT−ADJ  
Error − 0%  
b. R = R = 5.1 kW  
Feed Forward Capacitor CFF  
1
2
Feedforward capacitor is recommended to improve  
PSRR, load transient and noise performance.  
Recommended value for NCP136 device is about 5.6 nF.  
The capacitor can also improve LDO stability.  
V
= 0.4 (1 + 5.1 kW/5.1 kW ) +  
OUT−ADJ  
100 nA 5.1 kW = 0.80051 V  
Error − 0.06%  
www.onsemi.com  
11  
 
NCP136  
Enable Operation  
current source with typ. value of 0.3 mA which assures that  
The enable pin will turn the regulator on or off. The  
threshold limits are covered in the electrical characteristics  
table in this data sheet. To get the full functionality of Soft  
the device is turned off when the EN pin is not connected.  
Current Limitation  
The internal Current Limitation circuitry allows the  
device to supply the full nominal current and surges but  
protects the device against Current Overload or Short.  
Start, it is recommended to turn on the V and V  
supply  
IN  
BIAS  
voltages first and activate the Enable pin no sooner than V  
IN  
and V  
are on their nominal levels. If the enable function  
BIAS  
is not to be used then the pin should be connected to V or  
IN  
Thermal Protection  
V
BIAS  
.
Internal thermal shutdown (TSD) circuitry is provided to  
protect the integrated circuit in the event that the maximum  
junction temperature is exceeded. When TSD activated , the  
regulator output turns off. When cooling down under the low  
temperature threshold, device output is activated again. This  
TSD feature is provided to prevent failures from accidental  
overheating.  
Activation of the thermal protection circuit indicates  
excessive power dissipation or inadequate heatsinking. For  
reliable operation, junction temperature should be limited to  
+105°C maximum.  
If the EN pin voltage is < 0.4 V the device is guaranteed  
to be disabled. The pass transistor is turned off so that there  
is virtually no current flow between the IN and OUT. The  
active discharge transistor is active (devices with Output  
Active Discharge feature only) so that the output voltage  
V
is pulled down to GND through a 150 W resistor. In  
OUT  
the disable state the device consumes as low as typ. 0.5 mA  
from the V and 0.5 mA from V . If the EN pin voltage  
IN  
BIAS  
> 0.9 V the device is guaranteed to be enabled. The NCP136  
regulates the output voltage and the active discharge  
transistor is turned off. The EN pin has internal pull−down  
ORDERING INFORMATION  
Nominal Output  
Device  
Marking  
Option  
Package  
Shipping†  
Voltage  
NCP136AFCT080T2G  
0.80 V  
7A  
Output Active Discharge,  
Normal TurnOn Slew Rate  
NCP136BFCT080T2G  
NCP136AFCT088T2G  
NCP136AFCT105T2G  
NCP136AFCT110T2G  
NCP136AFCT120T2G  
NCP136CFCT120T2G  
NCP136AFCRC040T2G  
0.80 V  
0.88 V  
1.05 V  
1.10 V  
1.20 V  
1.20 V  
0.40 V  
7H  
7J  
Non*Active Discharge,  
Normal TurnOn Slew Rate  
Output Active Discharge,  
Normal TurnOn Slew Rate  
WLCSP6  
Case 567XK  
(Pb−Free)  
7K  
7L  
Output Active Discharge,  
Normal TurnOn Slew Rate  
5000 / Tape & Reel  
Output Active Discharge,  
Normal TurnOn Slew Rate  
7E  
7C  
7M  
Output Active Discharge,  
Normal TurnOn Slew Rate  
Output Active Discharge,  
Slow TurnOn Slew Rate  
Output Active Discharge,  
Normal TurnOn Slew Rate  
Back Side Coating  
WLCSP6  
Case 567YU  
(Pb−Free)  
5000 / Tape & Reel  
NCP136AFCRC080T2G  
0.80 V  
7A  
Output Active Discharge,  
Normal TurnOn Slew Rate  
Back Side Coating  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
To order other package and voltage variants, please contact your ON Semiconductor sales representative.  
www.onsemi.com  
12  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP6 1.4x0.8x0.33  
CASE 567XK  
ISSUE O  
DATE 15 JAN 2019  
GENERIC  
MARKING DIAGRAM*  
XXM  
XX = Specific Device Code  
M
= Month Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON03100H  
WLCSP6 1.4x0.8x0.33  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP6 1.4x0.8x0.37  
CASE 567YU  
ISSUE O  
DATE 14 NOV 2019  
GENERIC  
MARKING DIAGRAM*  
XXM  
XX = Specific Device Code  
M
= Month Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON14943H  
WLCSP6 1.4x0.8x0.37  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
Email Requests to: orderlit@onsemi.com  
TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 8002829855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
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For additional information, please contact your local Sales Representative  
ON Semiconductor Website: www.onsemi.com  
www.onsemi.com  

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