NCP2811BFCCT1G [ONSEMI]
音频功率放大器，真实接地立体声耳机;
| 型号： | NCP2811BFCCT1G |
| 厂家： | 
ONSEMI |
| 描述： | 音频功率放大器，真实接地立体声耳机 放大器 功率放大器 消费电路 商用集成电路 音频放大器 视频放大器 |
| 文件： | 总14页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCP2811
NOCAPt Advanced Stereo
Headphone Amplifier
NCP2811 is a dual audio power amplifier designed for portable
communication device applications such as mobile phones. This part
is capable of delivering 27 mW of continuous average power into a
16 Ω load from a 2.7 V power supply with a THD+N of 1%.
Based on the power supply delivered to the device, an internal
power management block generates a symmetrical positive and
negative voltage. Thus, the internal amplifiers provide outputs
referenced to Ground. In this True Ground configuration, the two
external heavy coupling capacitors can be removed. It offers
significant space and cost savings compared to a typical stereo
application.
NCP2811 is available with an external adjustable gain (version A),
or with an internal gain of −1.5 V/V (version B). It reaches a superior
−100 dB PSRR and noise floor. Thus, it offers high fidelity audio
sound, as well as a direct connection to the battery. It contains circuitry
to prevent from “Pop & Click” noise that would otherwise occur
during turn−on and turn−off transitions. The device is available in 12
bump CSP package (2 x 1.5 mm) which help to save space on the
board. It is also available in WQFN12 and TSSOP−14 packages.
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MARKING
DIAGRAMS
12 PIN CSP
FC SUFFIX
CASE 499AZ
2811x
AYWW
G
x
= A for NCP2811A
= B for NCP2811B
= Assembly Location
= Year
A
Y
WW = Work Week
G
= Pb−Free Package
WQFN12
MT SUFFIX
CASE 510AH
2811x
ALYWG
G
1
Features
• True Ground Configuration Output Eliminates DC−Blocking
Capacitors:
x
= A for NCP2811A
= B for NCP2811B
= Assembly Location
= Wafer Lot
= Year
= Work Week
− Save Board Area
− Save Component Cost
− No Low−Frequency Response Attenuation
A
L
Y
W
G
• High PSRR (−100 dB): Direct Connection to the Battery
• “Pop and Click” Noise Protection Circuitry
• Internal Gain (−1.5 V/V) or External Adjustable Gain
• Ultra Low Current Shutdown Mode
• 2.7 V – 5.0 V Operation
= Pb−Free Package
(Note: Microdot may be in either location)
14
2811
TSSOP−14
DTB SUFFIX
CASE 948G
• Thermal Overload Protection Circuitry
• CSP 2 x 1.5 mm
x
ALYWG
G
14
1
• WQFN12 3 x 3 mm
• TSSOP−14
1
x
= A for NCP2811A
= B for NCP2811B
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A
L
Typical Applications
Y
W
G
• Headset Audio Amplifier for
− Cellular Phones
(Note: Microdot may be in either location)
− MP3 Player
− Personal Digital Assistant and Portable Media Player
− Portable Devices
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 2
NCP2811/D
NCP2811
1 mF
1 mF
1 mF
1 mF
VP
VP
B1 C1
VP
C3
B1 C1
VP
C3
1 mF
PVM
1 mF
PVM
C2
C2
PGND
PVM
SPVM
PGND
PVM
C4
C4
10
Audio Left
Audio Left
SD
B3
A2
B2
B3
A2
B2
INL
SD
INL
SD
SPVM
B4
A4
B4
A4
SD
10
OUTL
OUTR
OUTL
OUTR
Audio Right
OUTL
OUTR
Audio Right
OUTL
OUTR
INR
INR
A3
A3
AGND
A1
AGND
A1
10
10
A version
B version
Figure 1. Application Schematics
WQFN12
12 PIN CSP
TSSOP14
OUTL
OUTR
NC
INR
AGND
INL
NC
VP
A1
A2
A3
A4
CPP
PGND
CPM
NC
INR
AGND SD OUTR OUTL
CPP
PGND
CPM
PVM
SD
B1
VP
C1
B2
INR
C2
B3
INL SPVM
C3 C4
B4
AGND
NC
CPP PGND CPM PVM
(Top View)
(Top View)
(Top View)
Figure 2. Pin Configurations
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NCP2811
1 mF
VP
Cs
1 mF
CPM
VP
CPP
VRP
PGND
PVM
1 mF
POWER MANAGEMENT
SPVM
VRM
Left
Audio
VRP
INL
−
OUTL
+
VRM
VRP
Use 10 ohm
resistor for
capacitive drive
capability
SD
CLICK/POP
SUPPRESSION
BIASING
+
Right
Audio
OUTR
INR
−
VRM
AGND
Figure 3. Typical Application Schematic version A
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NCP2811
VP
1 mF
Cs
1 mF
CPP
CPM
VP
VRP
PGND
PVM
1 mF
POWER MANAGEMENT
VRM
Left
Audio
VRP
INL
−
OUTL
+
VRM
VRP
Use 10 ohm resistor
for capacitive
drive capability
SD
CLICK/POP
BIASING
SUPPRESSION
+
Right
Audio
OUTR
INR
−
VRM
AGND
Figure 4. Typical Application Schematic version B
Table 1. PIN FUNCTION DESCRIPTION
PIN
PIN
PIN
PIN
CSP
TQFN
TSSOP
NAME
TYPE
GROUND
INPUT
DESCRIPTION
Analog ground. Connect to ground reference
Enable activation
A1
A2
A3
A4
B1
7
10
7
AGND
SD
5
10
11
12
13
14
2
OUTR
OUTL
VP
OUTPUT
OUTPUT
POWER
Right audio channel output signal
Left audio channel output signal
Positive supply voltage. It can be connected for example to a Lithium/Ion
battery
B2
B3
B4
C1
8
6
−
1
11
9
INR
INL
INPUT
INPUT
Right input of the first audio source
Left input of the first audio source
−
SPVM
CPP
POWER
Amplifier negative power supply voltage. Connect to PVM
3
INPUT/
OUTPUT
Charge pump flying capacitor positive terminal. A 1 mF ceramic filtering
capacitor to CPM is needed
C2
C3
2
3
4
5
PGND
CPM
GROUND
INPUT
Power ground, connect to ground reference
Charge pump flying capacitor negative terminal. A 1 mF ceramic filtering
capacitor to CPP is needed
C4
4
6
PVM
OUTPUT
Charge pump output. A 1 mF ceramic filtering capacitor to ground is
needed
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NCP2811
Table 2. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
AVIN, PVIN Pins: Power Supply Voltage (Note 2)
V
P
− 0.3 to + 6.0
INL, INR Pins: Input (Note 2)
A version
V
IN
V
−V – 0.3 to V + 0.3
P
P
B version
−2 to +2
SD Pin: Input (Note 2)
V
−0.3 to V + 0.3
V
V
YY
P
Human Body Model (HBM) ESD Rating are (Note 3)
Machine Model (MM) ESD Rating are (Note 3)
ESD HBM
ESD MM
R
2000
200
V
CSP 1.5 x 2.0 mm package (Notes 6 and 7)
Thermal Resistance Junction to Case
(Note 7)
°C/W
q
JC
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature (Note 6)
Storage Temperature Range
T
−40 to + 85
−40 to + 125
+ 150
°C
°C
°C
°C
A
T
J
T
JMAX
T
STG
−65 to + 150
Level 1
Moisture Sensitivity (Note 5)
MSL
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Notes:
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T = 25°C.
A
2. According to JEDEC standard JESD22−A108B.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) 2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) 200 V per JEDEC standard: JESD22−A115 for all pins.
4. Latch up Current Maximum Rating: 100 mA per JEDEC standard: JESD78 class II.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
6. The thermal shutdown set to 150°C (typical) avoids irreversible damage on the device due to power dissipation.
2
7. The R is highly dependent of the PCB Heatsink area. For example, R can equal 195°C/W with 50 mm total area and also 135°C/W with
JA
JA
2
50 mm . The bumps have the same thermal resistance and all need to be connected to optimize the power dissipation.
125 * TA
RqCA
+
* RqJC
PD
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NCP2811
Table 3. ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T between −40°C to +85°C and T up to + 125°C for V
A
J
IN
between 2.7 V to 5.0 V (Unless otherwise noted). Typical values are referenced to T = + 25°C and V = 3.6 V.
A
IN
Symbol
Parameter
Operational Power Supply
Conditions
Min
Typ
Max
Unit
V
P
2.7
5.0
V
mA
mA
mV
V
I
Supply quiescent current
Shutdown current
Both channels enabled
6.0
1
DD
I
V
= 2.7 V to 5.0 V
= 2.7 V to 5.0 V
1
SD
P
P
V
OS
Output offset voltage
V
V
IH
High−Level input voltage SD pin
Low−Level input voltage SD pin
SD pin pull−down impedance
Turning on time
1.2
V
IL
0.4
V
R
190
1
KW
ms
°C
SD
WU
T
T
SD
Thermal shutdown temperature
Max output swing (peak value)
160
V
LP
V
P
= 2.9 V to 5.0 V
1
V
RMS
Headset ≥ 16 W
THD+N = 1%
P
O
Max output power (output in phase)
V
= 2.7V, THD+N = 1%
27
37
mW
P
Headset = 16 W
= 2.7V, THD+N = 1%
V
P
Headset = 32 W
= 3.6V, THD+N = 1%
90
V
P
Headset = 16 W
= 3.6V, THD+N = 1%
64
V
P
Headset = 32 W
= 5.0V, THD+N = 1%
110
64
V
P
Headset = 16 W
= 5.0V, THD+N = 1%
V
P
Headset = 32 W
Crosstalk (Note 8)
Headset ≥ 16 W
−80
−60
dB
dB
PSRR
Power supply rejection ratio (Note 8)
V = 2.7 V to 5.0 V
P
Input shorted to ground
F = 217 Hz
F = 1 kHz
−106
−95
THD+N
Total harmonic distortion + noise (Note 8)
Headset = 16 W
0.01
%
P
OUT
= 25 mW
V
Output noise voltage (Note 8)
Input impedance
A−Weighting filter
7
mV
RMS
N
Z
IN
B version only
20
KW
Z
Output impedance in shutdown mode
UVLO threshold
10
KW
V
SD
UVLO
UVLO
Falling edge
2.3
100
−1.5
UVLO hysteresis
mV
V/V
HYST
Av
Voltage Gain
B version only
−1.53
−1.48
8. Guaranteed by design and characterized.
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NCP2811
TYPICAL OPERATING CHARACTERISTICS
100
10
100
16 W in Phase
16 W out of Phase
10
1
1
0.1
0.1
THD+N_L (%)
THD+N_R (%)
THD+N_L (%)
THD+N_R (%)
100 120
0.01
0.01
0.001
0.001
0
0
0
20
40
60
80
Pout (mW)
140 160
0
0
0
20
40
60
80 100 120 140 160 180
Pout (mW)
Figure 5. THD+N vs. Pout @ Vp = 3.6 V
Figure 6. THD+N vs. Pout @ Vp = 3.6 V
100
10
1
100
10
1
16 W in Phase
2.7 V
16 W out of Phase
2.7 V
3.0 V
3.0 V
3.6 V
3.6 V
4.2 V
0.1
0.1
4.2 V
Vp = 5 V
Vp = 5 V
0.01
0.01
0.001
0.001
20
40
60
80 100 120 140 160 180
Pout (mW)
20
40
60
80 100 120 140 160 180
Pout (mW)
Figure 7. THD+N vs. Pout LEFT
Figure 8. THD+N vs. Pout RIGHT
100
10
100
10
1
16 W out of Phase
16 W out of Phase
2.7 V
2.7 V
3.0 V
3.0 V
3.6 V
4.2 V
Vp = 5 V
3.6 V
4.2 V
Vp = 5 V
1
0.1
0.1
0.01
0.01
0.001
0.001
20
40
60
80 100 120 140 160 180
Pout (mW)
20
40
60
80
100 120 140 160 180
Pout (mW)
Figure 9. THD+N vs. Pout LEFT
Figure 10. THD+N vs. Pout RIGHT
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NCP2811
TYPICAL OPERATING CHARACTERISTICS
100
10
100
32 W out of Phase
32 W in Phase
10
THD+N_L (%)
THD+N_L (%)
1
1
THD+N_R (%)
THD+N_R (%)
0.1
0.1
0.01
0.01
0.001
0.001
0
0
0
10
20 30 40 50 60 70 80 90 100
Pout (mW)
0
0
0
10
20 30 40 50 60 70 80 90 100
Pout (mW)
Figure 11. THD+N vs. Pout @ Vp = 3.6 V
Figure 12. THD+N vs. Pout @ Vp = 3.6 V
100
10
1
100
10
32 W in Phase
32 W in Phase
2.7 V
2.7 V
3.0 V
3.0 V
3.6 V
4.2 V
3.6 V
4.2 V
1
Vp = 5 V
Vp = 5 V
0.1
0.1
0.01
0.01
0.001
0.001
10
20 30 40
50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Pout (mW)
Pout (mW)
Figure 13. THD+N vs. Pout LEFT
Figure 14. THD+N vs. Pout RIGHT
100
10
100
10
32 W out of Phase
32 W out of Phase
2.7 V
3.0 V
3.6 V
2.7 V
3.0 V
1
1
3.6 V
4.2 V
4.2 V
0.1
0.1
Vp = 5 V
Vp = 5 V
0.01
0.01
0.001
0.001
10 20 30 40
50 60 70
80 90 100
10 20 30 40 50 60 70
Pout (mW)
80 90 100
Pout (mW)
Figure 15. THD+N vs. Pout LEFT
Figure 16. THD+N vs. Pout RIGHT
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NCP2811
TYPICAL OPERATING CHARACTERISTICS
1
1
16 W out of Phase
16 W out of Phase
0.1
0.1
VP = 3.6 V
VP = 5.0 V
VP = 3.6 V
0.01
0.01
VP = 2.7 V
VP = 2.7 V
VP = 5.0 V
0.001
0.001
10
10
2.7
100
1,000
10,000
100,000
10
100
1,000
10,000
100,000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17. THD vs. Frequency LEFT
@ Pout = 32 mW
Figure 18. THD vs. Frequency RIGHT
@ Pout = 32 mW
1
1
32 W out of Phase
32 W out of Phase
VP = 2.7 V
VP = 3.6 V
VP = 5.0 V
VP = 2.7 V
VP = 3.6 V
VP = 5.0 V
0.1
0.1
0.01
0.01
0.001
0.001
100
1,000
FREQUENCY (Hz)
10,000
100,000
10
100
1,000
FREQUENCY (Hz)
10,000
100,000
Figure 19. THD vs. Frequency LEFT
@ Pout = 32 mW
Figure 20. THD vs. Frequency RIGHT
@ Pout = 32 mW
140
120
100
80
80
70
60
50
40
30
20
85°C
25°C
25°C
85°C
−40°C
−40°C
60
40
20
0
10
0
3.2
3.7
VP (V)
4.2
4.7
2.7
3.2
3.7
VP (V)
4.2
4.7
Figure 21. Maximum Output Power LEFT vs.
VP (THD+N < 1%)
Figure 22. Maximum Output Power LEFT vs.
VP (THD+N < 0.1%)
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NCP2811
TYPICAL OPERATING CHARACTERISTICS
−60
−65
0
−20
−40
−70
−75
−80
Left to Right
−85
−60
−80
−90
−95
Right to Left
−100
−105
−110
NCP2811B Left
−100
−120
−115
−120
NCP2811B Right
100
10
1000
10,000
100,000
10
100
1000
10,000
100,000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 23. PSRR at Vp = 3.6 V
Figure 24. Crosstalk vs. Frequency
@ Vp = 3.6 V
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NCP2811
DETAIL OPERATING DESCRIPTION
Detailed Descriptions
filter with R (externally selectable for A version, 20 kW for
in
The NCP2811 is a stereo headphone amplifier with a true
ground architecture. This architecture eliminates the need to
use 2 external big capacitors required by conventional
headphone amplifier.
B version).
The size of the capacitor must be large enough to couple
in low frequencies without severe attenuation in the audio
bandwith (20 Hz – 20 kHz).
The structure of the NCP2811 is basically composed of 2
true ground amplifiers, an UVLO, a short circuit protection
and also a thermal shutdown. A special circuitry is
embedded to eliminate any pop and click noise that occurs
during turn on and turn off time. The A version has an
external gain selectable by two resistor, B version has a gain
of 1.5 V/V.
The cut off frequency for the input high−pass filter is:
1
Fc +
2pRinCin
A F < 20 Hz is recommended.
c
Charge Pump Capacitor Selection
Use ceramic capacitor with low ESR for better
performances. X5R / X7R capacitor is recommended.
The flying capacitor (C2) serves to transfer charge during
the generation of the negative voltage.
The CPVM capacitor (C3) must be equal at least to the
CFly capacitor to allow maximum transfer charge. The
CPVM value must not exceed 1 mF. Higher capacitor value
can damage the part.
NOCAPt
NOCAPt is a patented architecture which requires only
2 small ceramic capacitors. It generates a symmetrical
positive and negative voltage and it allows the output of the
amplifiers to be biased around the ground.
Current Limit Protection Circuit
Table 4 suggests typical value and manufacturer:
The NCP2811 embed a protection circuitry against short
to ground. When an output is shorted to GND and when a
signal appears at the input, the current is limited to 300 mA.
Table 4.
Value
1 mF
Reference
Package
0402
Manufacturer
TDK
Thermal Overload Protection
C1005X5R0J105K
GRM155R60J105K19
Internal amplifiers are switched off when the temperature
exceed 160°C, and will be switch on again when the
temperature decrease below 140°C.
1 mF
0402
Murata
Lower value of capacitors can be used but the maximum
output power is reduced and the device may not operate to
specifications.
Under Voltage Lockout
When the battery voltage decreases below 2.3 V, the
amplifiers are turned off. The hysteresis to turn on it again
is 100 mV.
Power Supply Decoupling Capacitor (C1)
The NCP2811 is a True Ground amplifier which requires
the adequate decoupling capacitor to reduce noise and
THD+N. Use X5R / X7R ceramic capacitor and place it
closed to the CPVDD pin. A value of 1 mF is recommended.
Pop and Click Suppression Circuitry
The NCP2811 includes a special circuitry to eliminate any
pop and click noise during turn on and turn off time. Basic
amplifier creates an offset during these transitions at the
output which give a parasitic noise called “pop and click
noise”. The NCP2811 eliminates this problem.
Shutdown Function
The device enters in shutdown mode when shutdown signal
is low. During the shutdown mode, the DC quiescent current
of the circuit does not exceed 500 nA. In this configuration,
the output impedance is 10 kW on each output.
Gain Setting Resistor Selection (Rin & Rf, A version
only)
R and R set the closed loop gain of the amplifier. A low
in
f
Output Resistor for Capacitive Drive Capability
Under normal operation, NCP2811 maximum direct
capacitive load is in the 80 pF range. If, for any reason, high
value capacitive loads should be connected to NCP2811
outputs, an additional 10 W resistor should be placed
between the NCP2811 output and the capacitive load to
ensure amplifier stability.
gain configuration (close to 1) minimizes the THD + noise
values and maximizes the signal to noise ratio.
A closed loop gain in the range of 1 to 10 is recommended
to optimize overall system performance.
The formula to calculate the gain is:
Rf
Rin
Av + *
Layout Recommendation
Connect C1 as close as possible of the Vp pin.
Connect C2 and C3 as close as possible of the NCP2811.
Route audio signal and AGND far from Vp, CPP, CPM,
PVM and PGND to avoid any perturbation due to the
switching.
Input Capacitor Selection
The input coupling capacitor blocks the DC voltage at the
amplifier input terminal. This capacitor creates a high−pass
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NCP2811
Table 5. ORDERING INFORMATION
Device
†
Package
Shipping
NCP2811ADTBR2G
TSSOP−14
(Pb−Free)
2500/Tape & Reel
2500/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
NCP2811BDTBR2G
NCP2811AFCT1G
NCP2811BFCT1G
NCP2811AMTTXG
NCP2811BMTTXG
TSSOP−14
(Pb−Free)
Flip−Chip 12
(Pb−Free)
Flip−Chip 12
(Pb−Free)
WQFN12
(Pb−Fre)
WQFN12
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PACKAGE DIMENSIONS
12 PIN FLIP−CHIP, 2.0x1.5, 0.5P
CASE 499AZ−01
ISSUE O
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
B
E
PIN A1
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
2X
MILLIMETERS
0.10
C
DIM MIN
MAX
0.60
0.27
0.39
0.34
A
A1
A2
b
0.54
0.21
0.33
0.29
2X
0.10
C
TOP VIEW
SIDE VIEW
D
2.00 BSC
A
E
e
1.50 BSC
0.50 BSC
A2
0.10
C
C
A1
C
0.05
SOLDERING FOOTPRINT*
12X
SEATING
PLANE
NOTE 3
0.5
PITCH
0.5
PITCH
A1
e/2
e
12X
b
e
C
B
A
0.05
0.03
C A B
12X
0.25
PACKAGE
OUTLINE
C
1
2
3
4
BOTTOM VIEW
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NCP2811
PACKAGE DIMENSIONS
WQFN12 3x3, 0.5P
CASE 510AH−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
L
L
B
E
A
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
L1
DETAIL A
ALTERNATE
MILLIMETERS
CONSTRUCTIONS
DIM MIN
MAX
0.85
0.05
A
A1
A3
b
0.65
0.00
0.22 REF
A3
2X
0.10
C
EXPOSED Cu
MOLD CMPD
0.20
0.30
D
D2
E
3.00 BSC
2X
0.10
C
1.30
1.50
TOP VIEW
3.00 BSC
E2
e
K
L
L1
1.30
0.50 BSC
0.20
0.30
0.00
1.50
A1
A
DETAIL B
0.10
0.10
C
DETAIL B
−−−
0.50
0.15
A3
ALTERNATE
CONSTRUCTIONS
C
13X
A1
NOTE 4
SEATING
PLANE
C
SOLDERING FOOTPRINT*
SIDE VIEW
12X
0.63
PACKAGE
OUTLINE
D2
DETAIL A
12X L
4
1
7
2X
1.50
2X
3.30
12X
b
E2
K
0.10 C A B
0.05
1
12X
0.30
C
NOTE 3
12
0.50
PITCH
e
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
NCP2811
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G−01
ISSUE B
NOTES:
14X K REF
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
M
S
S
V
0.10 (0.004)
T U
S
0.15 (0.006) T U
N
0.25 (0.010)
14
8
2X L/2
M
B
L
N
−U−
PIN 1
IDENT.
F
7
1
DETAIL E
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
K
0.15 (0.006) T U
A
−V−
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
K1
A
B
C
D
F
G
H
J
4.90
4.30
−−−
0.05
0.50
5.10 0.193 0.200
4.50 0.169 0.177
J J1
1.20
−−− 0.047
0.15 0.002 0.006
0.75 0.020 0.030
SECTION N−N
0.65 BSC
0.026 BSC
0.60 0.020 0.024
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.50
0.09
0.09
0.19
J1
K
−W−
C
K1 0.19
L
M
6.40 BSC
0.252 BSC
0.10 (0.004)
0
8
0
8
_
_
_
_
SEATING
PLANE
−T−
H
G
DETAIL E
D
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
01.34X6
14X
1.26
DIMENSIONS: MILLIMETERS
ON Semiconductor and
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NCP2811/D
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