NCP3063BDR2G [ONSEMI]

1.5 A, Step−Up/Down/Inverting Switching Regulators; 1.5 A ,步上/下/反相开关稳压器
NCP3063BDR2G
型号: NCP3063BDR2G
厂家: ONSEMI    ONSEMI
描述:

1.5 A, Step−Up/Down/Inverting Switching Regulators
1.5 A ,步上/下/反相开关稳压器

稳压器 开关
文件: 总16页 (文件大小:259K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCP3063, NCP3063B,  
NCV3063  
1.5 A, Step−Up/Down/  
Inverting Switching  
Regulators  
http://onsemi.com  
MARKING  
The NCP3063 Series is a higher frequency upgrade to the popular  
MC34063A and MC33063A monolithic DC−DC converters. These  
devices consist of an internal temperature compensated reference,  
comparator, a controlled duty cycle oscillator with an active current  
limit circuit, a driver and a high current output switch. This series was  
specifically designed to be incorporated in Step−Down, Step−Up and  
Voltage−Inverting applications with a minimum number of external  
components.  
DIAGRAMS  
3063x  
ALYW  
G
8
1
1
Features  
SOIC−8  
D SUFFIX  
CASE 751  
Operation to 40 V Input  
V3063  
ALYW  
G
Low Standby Current  
Output Switch Current to 1.5 A  
Output Voltage Adjustable  
Frequency Operation of 150 kHz  
Precision 1.5% Reference  
1
NCP3063x  
AWL  
New Features: Internal Thermal Shutdown with Hysteresis  
New Features: Cycle−by−Cycle Current Limiting  
Pb−Free Packages are Available  
YYWWG  
1
8
1
Applications  
NCV3063  
AWL  
YYWWG  
PDIP−8  
P, P1 SUFFIX  
CASE 626  
Step−Down, Step−Up and Inverting supply applications  
High Power LED Lighting  
Battery Chargers  
1
8
8
1
NCP3063  
SET dominant  
TSD  
1
R
S
3063y  
ALYW G  
DFN−8  
SUFFIX  
CASE 488  
Q
7
COMPARATOR  
+
S
2
3
SET dominant  
Q
Rs  
NCP3063x = Specific Device Code  
x = B  
R
0.15 W  
D
OSCILLATOR  
CT  
0.2 V  
A
=
=
=
=
=
Assembly Location  
Wafer Lot  
Year  
Work Week  
Pb−Free Package  
6
V
in  
L, WL  
Y, YY  
W, WW  
G
L
47 mH  
12 V  
+
CT  
2.2 nF  
COMPARATOR  
C
1.25 V  
REFERENCE  
REGULATOR  
in  
+
220 mF  
V
5
out  
3.3 V /  
4
(Note: Microdot may be in either location)  
800 mA  
3.9 kW  
R2  
+
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 13 of this data sheet.  
R1  
2.4 kW  
470 mF  
C
out  
Figure 1. Typical Buck Application Circuit  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 1  
NCP3063/D  
NCP3063, NCP3063B, NCV3063  
PIN CONNECTIONS  
1
Switch Collector  
Switch Emitter  
8
7
N.C.  
Sense  
I
2
3
4
pk  
Timing Capacitor  
GND  
6
5
V
CC  
Comparator  
Inverting  
Input  
(Top View)  
NCP3063  
8
1
TSD  
N.C.  
Switch Collector  
SET dominant  
R
Q
S
COMPARATOR  
7
+
2
3
I
Sense  
pk  
S
Q
R
Switch Emitter  
SET dominant  
0.2 V  
OSCILLATOR  
CT  
6
5
Timing Capacitor  
+V  
CC  
COMPARATOR  
1.25 V  
REFERENCE  
REGULATOR  
+
4
GND  
Comparator Inverting Input  
Figure 2. Block Diagram  
http://onsemi.com  
2
 
NCP3063, NCP3063B, NCV3063  
PIN DESCRIPTION  
Pin No.  
Pin Name  
Description  
Internal Darlington switch collector  
1
2
3
4
5
Switch Collector  
Switch Emitter  
Timing Capacitor  
GND  
Internal Darlington switch emitter  
Timing Capacitor to control the switching frequency  
Ground pin for all internal circuits  
Comparator  
Inverting input pin of internal comparator  
Inverting Input  
6
7
V
Voltage supply  
CC  
I
Sense  
Peak Current Sense Input to monitor the voltage drop across an external resistor to limit the peak  
current through the circuit  
pk  
8
N.C.  
Pin not connected  
MAXIMUM RATINGS (measured vs. pin 4, unless otherwise noted)  
Rating  
Symbol  
Value  
Unit  
V
pin 6  
V
0 to +40  
V
V
CC  
CC  
Comparator Inverting Input pin 5  
V
− 0.2 to + V  
CII  
CC  
CC  
Darlington Switch Collector pin 1  
V
SWC  
V
SWE  
0 to +40  
− 0.6 to + V  
0 to +40  
1.5  
V
V
V
A
V
Darlington Switch Emitter pin 2 (transistor OFF)  
Darlington Switch Collector to Emitter pin 1−2  
Darlington Switch Current  
V
SWCE  
I
SW  
I
Sense pin 7  
V
− 0.2 to V + 0.2  
pk  
IPK  
CC  
Power Dissipation and Thermal Characteristics  
PDIP−8  
°C/W  
°C/W  
Thermal Resistance Junction−to−Air  
R
100  
q
q
JA  
SOIC−8  
Thermal Resistance Junction−to−Air  
R
T
180  
−65 to +150  
+150  
JA  
Storage Temperature Range  
°C  
°C  
°C  
STG  
Maximum Junction Temperature  
T
J MAX  
Operating Junction Temperature Range (Note 3)  
NCP3063  
T
J
0 to +70  
NCP3063B, NCV3063  
−40 to +125  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. This device series contains ESD protection and exceeds the following tests:  
Pin 1−8: Human Body Model 2000 V per AEC Q100−002; 003 or JESD22/A114; A115  
Machine Model Method 200 V  
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.  
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is T = T + R  
4. The pins which are not defined may not be loaded by external signals  
P
D
q •  
J
A
http://onsemi.com  
3
 
NCP3063, NCP3063B, NCV3063  
ELECTRICAL CHARACTERISTICS (V = 5.0 V, T = T to T [Note 5], unless otherwise specified)  
high  
CC  
J
low  
Symbol  
Characteristic  
Conditions  
Min  
Typ  
Max  
Unit  
OSCILLATOR  
f
Frequency  
(VPin 5 = 0 V, CT = 2.2 nF,  
110  
5.5  
150  
6.0  
190  
6.5  
kHz  
OSC  
T = 25°C)  
J
I
/
Discharge to Charge Current Ratio  
(Pin 7 to V , T = 25°C)  
DISCHG  
CC  
J
I
CHG  
V
Current Limit Sense Voltage  
(TJ = 25°C) (Note 6)  
165  
200  
235  
mV  
IPK(Sense)  
OUTPUT SWITCH (Note 7)  
V
Darlington Switch Collector to  
Emitter Voltage Drop  
(I  
= 1.0 A, Pin 2 to GND,  
SW  
T = 25°C) (Note 7)  
J
1.0  
1.3  
V
SWCE(DROP)  
I
Collector Off−State Current  
(V = 40 V)  
CE  
0.01  
100  
mA  
C(OFF)  
COMPARATOR  
V
Threshold Voltage  
T = 25°C  
1.250  
V
%
TH  
J
NCP3063  
−1.5  
−2  
+1.5  
+2  
NCP3063B, NCV3063  
%
REG  
Threshold Voltage Line Regulation  
Input Bias Current  
(V = 5.0 V to 40 V)  
−6.0  
−1000  
2.0  
6.0  
mV  
nA  
LiNE  
CC  
I
(V = V )  
−100  
1000  
CII in  
in  
th  
TOTAL DEVICE  
I
Supply Current  
(V = 5.0 V to 40 V,  
7.0  
mA  
CC  
CC  
CT = 2.2 nF, Pin 7 = V  
,
CC  
VPin 5 > V , Pin 2 = GND,  
th  
remaining pins open)  
Thermal Shutdown Threshold  
Hysteresis  
160  
10  
°C  
°C  
5. NCP3063: T  
= 0°C, T  
= +70°C;  
high  
low  
low  
NCP3063B, NCV3063: T = −40°C, T  
= +125°C  
high  
6. TheVIPK(Sense) Current Limit Sense Voltage is specified at static conditions. In dynamic operation the sensed current turn−off value depends  
on comparator response time and di/dt current slope. See the Operating Description section for details.  
7. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.  
8. NCV prefix is for automotive and other applications requiring site and change control.  
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NCP3063, NCP3063B, NCV3063  
200  
180  
160  
140  
190  
180  
170  
160  
150  
140  
130  
C
= 2.2 nF  
T
T = 25°C  
J
120  
100  
80  
60  
40  
20  
0
120  
110  
0 1 2 3 4 5 6 7 8 9 1011 12 1314 15 16 1718 19 20  
Ct, CAPACITANCE (nF)  
3
7
12  
16  
21  
25  
29  
34  
38 40  
V
, SUPPLY VOLTAGE (V)  
CC  
Figure 3. Oscillator Frequency vs. Oscillator  
Timing Capacitor  
Figure 4. Oscillator Frequency vs. Supply  
Voltage  
2.4  
2.2  
2.0  
1.8  
1.25  
1.20  
1.15  
1.10  
V
= 5.0 V  
= 1 A  
CC  
V
= 5.0 V  
= 1 A  
CC  
I
E
I
C
1.6  
1.4  
1.05  
1.0  
1.2  
1.0  
−50  
0
50  
100  
150  
−50  
0
50  
100  
150  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 5. Emitter Follower Configuration Output  
Darlington Switch Voltage Drop vs. Temperature  
Figure 6. Common Emitter Configuration Output  
Darlington Switch Voltage Drop vs. Temperature  
2.0  
1.9  
1.5  
1.4  
V
= 5.0 V  
V
= 5.0 V  
CC  
CC  
T = 25°C  
J
T = 25°C  
J
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.6  
0.5  
0
0.5  
1.0  
1.5  
0
0.5  
1.0  
1.5  
I , EMITTER CURRENT (A)  
E
I , COLLECTOR CURRENT (A)  
C
Figure 7. Emitter Follower Configuration Output  
Darlington Switch Voltage Drop vs. Emitter Current  
Figure 8. Common Emitter Configuration  
Output Darlington Switch Voltage Drop vs.  
Collector Current  
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5
 
NCP3063, NCP3063B, NCV3063  
1.30  
1.28  
1.26  
1.24  
0.30  
0.28  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
0.14  
1.22  
1.20  
0.12  
0.10  
−40 −25 −10  
5
20 35 50 65 80 95 110 125  
−40 −25 −10  
5
20 35 50 65 80 95 110 125  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 9. Comparator Threshold Voltage vs.  
Temperature  
Figure 10. Current Limit Sense Voltage vs.  
Temperature  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
C
T
= 2.2 nF  
Pin 5, 7 = V  
CC  
2.5  
2.0  
Pin 2 = GND  
33 38  
3.0 8.0  
13  
V
18  
23  
28  
43  
, SUPPLY VOLTAGE (V)  
CC  
Figure 11. Standby Supply Current vs. Supply Voltage  
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6
NCP3063, NCP3063B, NCV3063  
INTRODUCTION  
The NCP3063 is a monolithic power switching regulator  
controlled by the oscillator, thus pumping up the output filter  
capacitor. When the output voltage level reaches nominal,  
the output switch next cycle turning on is inhibited. The  
feedback comparator will enable the switching immediately  
when the load current causes the output voltage to fall below  
nominal. Under these conditions, output switch conduction  
can be enabled for a partial oscillator cycle, a partial cycle  
plus a complete cycle, multiple cycles, or a partial cycle plus  
multiple cycles. (See AN920/D for more information).  
optimized for dc to dc converter applications. The  
combination of its features enables the system designer to  
directly implement step−up, step−down, and voltage−  
inverting converters with a minimum number of external  
components. Potential applications include cost sensitive  
consumer products as well as equipment for industrial  
markets. A representative block diagram is shown in  
Figure 2.  
Operating Description  
Oscillator  
The NCP3063 is a hysteric, dc−dc converter that uses a  
gated oscillator to regulate output voltage. In general, this  
mode of operation is somewhat analogous to a capacitor  
charge pump and does not require dominant pole loop  
compensation for converter stability. The Typical Operating  
Waveforms are shown in Figure 12. The output voltage  
waveform shown is for a step−down converter with the  
ripple and phasing exaggerated for clarity. During initial  
converter startup, the feedback comparator senses that the  
output voltage level is below nominal. This causes the  
output switch to turn on and off at a frequency and duty cycle  
The oscillator frequency and off−time of the output switch  
are programmed by the value selected for timing capacitor  
C . Capacitor C is charged and discharged by a 1 to 6 ratio  
T
T
internal current source and sink, generating a positive going  
sawtooth waveform at Pin 3. The oscillator peak and valley  
voltage difference is 500 mV typically. To calculate the C  
T
capacitor value for required oscillator frequency, use the  
equations found in Figure 13. An Excel based design tool  
can be found at www.onsemi.com on the NCP3063 product  
page.  
1
Feedback Comparator Output  
0
1
I
Comparator Output  
PK  
0
Timing Capacitor, C  
T
On  
Off  
Output Switch  
Nominal Output Voltage Level  
Output Voltage  
Startup  
Operation  
Figure 12. Typical Operating Waveforms  
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NCP3063, NCP3063B, NCV3063  
Peak Current Sense Comparator  
With a voltage ripple gated converter operating under  
normal conditions, output switch conduction is initiated by  
the Voltage Feedback comparator and terminated by the  
oscillator. Abnormal operating conditions occur when the  
converter output is overloaded or when feedback voltage  
Real V  
on Rsc resistor  
turn−off  
V
+ V ) Rs @ (t_delay @ dińdt)  
ipk(sense)  
turn_off  
Typical I comparator response time t_delay is 350 ns.  
pk  
The di/dt current slope is growing with voltage difference on  
the inductor pins and with decreasing inductor value.  
It is recommended to check the real max peak current in  
the application at worst conditions to be sure that the max  
peak current will never get over the 1.5 A Darlington Switch  
Current max rating.  
sensing is lost. Under these conditions, the I Current Sense  
pk  
comparator will protect the Darlington output Switch. The  
switch current is converted to a voltage by inserting a  
fractional ohm resistor, R , in series with V and the  
SC  
CC  
Darlington output switch. The voltage drop across R is  
SC  
monitored by the Current Sense comparator. If the voltage  
Thermal Shutdown  
drop exceeds 200 mV with respect to V , the comparator  
CC  
Internal thermal shutdown circuitry is provided to protect  
the IC in the event that the maximum junction temperature  
is exceeded. When activated, typically at 160°C, the Output  
Switch is disabled. The temperature sensing circuit is  
designed with 10°C hysteresis. The Switch is enabled again  
when the chip temperature decreases to at least 150°C  
threshold. This feature is provided to prevent  
catastrophic failures from accidental device  
overheating. It is not intended to be used as a  
replacement for proper heatsinking.  
will set the latch and terminate output switch conduction on  
a
cycle−by−cycle basis. This Comparator/Latch  
configuration ensures that the Output Switch has only a  
single on−time during a given oscillator cycle.  
Real  
on  
I1  
V
turn−off  
Rs Resistor  
I through the  
Darlington  
Switch  
di/dt slope  
Io  
V
Output Switch  
ipk(sense)  
t_delay  
The output switch is designed in a Darlington  
configuration. This allows the application designer to  
operate at all conditions at high switching speed and low  
voltage drop. The Darlington Output Switch is designed to  
switch a maximum of 40 V collector to emitter voltage and  
current up to 1.5 A.  
The V  
Current Limit Sense Voltage threshold is  
IPK(Sense)  
specified at static conditions. In dynamic operation the  
sensed current turn−off value depends on comparator  
response time and di/dt current slope.  
APPLICATIONS  
Figures 14 through 22 show the simplicity and flexibility  
of the NCP3063. Three main converter topologies are  
demonstrated with actual test data shown below each of the  
circuit diagrams.  
Figure 13 gives the relevant design equations for the key  
parameters. Additionally, a complete application design aid  
for the NCP3063 can be found at www.onsemi.com.  
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8
NCP3063, NCP3063B, NCV3063  
(See Notes 9, 10, 11)  
Step−Down  
Step−Up  
Voltage−Inverting  
|V | ) V  
t
V
out  
) V  
V
out  
) V * V  
in  
out  
F
on  
F
F
t
V
in  
* V  
* V  
V
* V  
V
in  
* V  
off  
SWCE  
out  
in  
SWCE  
SWCE  
t
t
t
t
t
t
on  
off  
on  
off  
on  
off  
ton  
t
t
t
on  
t
on  
on  
f ǒ ) 1Ǔ  
f ǒ ) 1Ǔ  
f ǒ ) 1Ǔ  
off  
t
t
off  
off  
381.6 @ 10*6  
CT  
C
T
+
* 343 @ 10*12  
f
osc  
IL(avg)  
t
t
I
on  
on  
out  
out ǒ ) 1Ǔ  
out ǒ ) 1Ǔ  
I
I
t
t
off  
off  
Ipk (Switch)  
RSC  
DI  
2
DI  
2
DI  
2
L
L
L
I
)
I
)
I
)
L(avg)  
L(avg)  
L(avg)  
0.20  
pk (Switch)  
0.20  
0.20  
I
I
I
pk (Switch)  
pk (Switch)  
L
V
in  
* V  
DI  
V
in  
* V  
DI  
V
in  
* V  
* V  
out  
SWCE  
L
SWCE  
L
SWCE  
ǒ
Ǔt  
ǒ
Ǔt  
ǒ
Ǔt  
on  
on  
on  
DI  
L
Vripple(pp)  
2
t
I
t
I
on out  
on out  
C
1
8 f C  
) (ESR)2  
L
[
) DI @ ESR  
[
) DI @ ESR  
L
DI Ǹǒ Ǔ  
L
C
O
O
O
Vout  
R
2
R
2
R
2
THǒ ) 1Ǔ  
THǒ ) 1Ǔ  
THǒ ) 1Ǔ  
V
R
1
V
V
R
1
R
1
The Following Converter Characteristics Must Be Chosen:  
V − Nominal operating input voltage.  
in  
V
− Desired output voltage.  
− Desired output current.  
out  
I
out  
DI − Desired peak−to−peak inductor ripple current. For maximum output current it is suggested that DI be chosen to be  
L
L
less than 10% of the average inductor current I  
. This will help prevent I  
from reaching the current limit threshold  
L(avg)  
pk (Switch)  
set by R . If the design goal is to use a minimum inductance value, let DI = 2(I ). This will proportionally reduce  
SC  
L
L(avg)  
converter output current capability.  
f − Maximum output switch frequency.  
V
− Desired peak−to−peak output ripple voltage. For best performance the ripple voltage should be kept to a low  
ripple(pp)  
value since it will directly affect line and load regulation. Capacitor C should be a low equivalent series resistance (ESR)  
O
electrolytic designed for switching regulator applications.  
9. V  
− Darlington Switch Collector to Emitter Voltage Drop, refer to Figures 5, 6, 7 and 8.  
SWCE  
10.V − Output rectifier forward voltage drop. Typical value for 1N5819 Schottky barrier rectifier is 0.4 V.  
F
11. The calculated t /t must not exceed the minimum guaranteed oscillator charge to discharge ratio.  
on off  
Figure 13. Design Equations  
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NCP3063, NCP3063B, NCV3063  
U201  
N.C. SWC  
R201  
0R15  
8
7
6
5
1
2
3
4
+V  
= +3.3 V / 800 mA  
OUT  
L201 47 mH  
+V = +12 V  
SWE  
I
1
IN  
PK  
TCAP  
1
V
J203  
CC  
C206  
0.1 mF  
D201  
+
C203  
COMP GND  
NCP3063  
J201  
C205  
470 mF / 25 V  
+
2.2 nF  
1N5819  
J204  
1
C201  
0.1 mF  
C202  
220 mF / 50 V  
GND  
J202  
1
R203  
3K9 1%  
GND  
R202  
2K4 1%  
Figure 14. Typical Buck Application Schematic  
Value of Components  
Name  
L201  
D201  
C202  
C205  
C203  
Value  
Name  
R201  
R202  
R203  
C201  
C202  
Value  
47 mH, I > 1.5 A  
150 mW, 0.5 W  
sat  
1 A, 40 V Schottky Rectifier  
220 mF, 50 V, Low ESR  
470 mF, 25 V, Low ESR  
2.2 nF Ceramic Capacitor  
2.40 kW  
3.90 kW  
100 nF Ceramic Capacitor  
100 nF Ceramic Capacitor  
Test Results  
Test  
Condition  
= 9 V to 12 V, I = 800 mA  
Results  
Line Regulation  
Load Regulation  
Output Ripple  
V
in  
V
in  
V
in  
V
in  
V
in  
8 mV  
9 mV  
o
= 12 V, I = 80 mA to 800 mA  
o
= 12 V, I = 40 mA to 800 mA  
85 mV  
o
pp  
Efficiency  
= 12 V, I = 400 mA to 800 mA  
> 73%  
1.25 A  
o
Short Circuit Current  
= 12 V, R  
= 0.15 W  
load  
76  
74  
72  
70  
68  
66  
64  
0.1 0.2 0.3  
0.4 0.5 0.6 0.7  
OUTPUT LOAD (Adc)  
0.8 0.9  
1.0  
Figure 16. Efficiency vs. Output Current for the Buck  
Demo Board at Vin = 12 V, Vout = 3.3 V, TA = 255C  
Figure 15. Buck Demoboard Layout  
http://onsemi.com  
10  
NCP3063, NCP3063B, NCV3063  
L101  
100 mH  
U101  
N.C. SWC  
+V  
= +24 V / 350 mA  
OUT  
R101  
0R15  
D101  
1N5819  
8
7
6
5
1
2
3
4
1
+V = +12 V  
SWE  
I
J103  
IN  
PK  
+
TCAP  
1
V
CC  
C106  
0.1 mF  
C105  
330 mF / 50 V  
C103  
2.2 nF  
COMP GND  
NCP3063  
J101  
+
J104  
1
C101  
0.1 mF  
C102  
470 mF / 25 V  
GND  
J102  
1
R103  
18K0 1%  
GND  
R102  
1K0 1%  
Figure 17. Typical Boost Application Schematic  
Value of Components  
Name  
L101  
D101  
C102  
C105  
C103  
Value  
Name  
R101  
R102  
R103  
C101  
C106  
Value  
100 mH, I > 1.5 A  
150 mW, 0.5 W  
sat  
1 A, 40 V Schottky Rectifier  
470 mF, 25 V, Low ESR  
330 mF, 50 V, Low ESR  
2.2 nF Ceramic Capacitor  
1.00 kW  
18.00 kW  
100 nF Ceramic Capacitor  
100 nF Ceramic Capacitor  
Test Results  
Test  
Condition  
= 9 V to 15 V, I = 250 mA  
Results  
Line Regulation  
Load Regulation  
Output Ripple  
Efficiency  
V
in  
V
in  
V
in  
V
in  
2 mV  
5 mV  
o
= 12 V, I = 30 mA to 350 mA  
o
= 12 V, I = 10 mA to 350 mA  
350 mV  
o
pp  
= 12 V, I = 50 mA to 350 mA  
> 85.5%  
o
90  
89  
88  
87  
86  
85  
84  
83  
82  
81  
80  
0
0.05  
0.1  
0.15  
0.2  
0.25 0.3  
0.35 0.4  
OUTPUT LOAD (Adc)  
Figure 19. Efficiency vs. Output Current for the Boost  
Demo Board at Vin = 12 V, Vout = 24 V, TA = 255C  
Figure 18. Boost Demoboard Layout  
http://onsemi.com  
11  
NCP3063, NCP3063B, NCV3063  
U501  
N.C. SWC  
R501  
0R15  
8
7
6
5
1
2
3
4
+V = +5 V  
SWE  
I
IN  
PK  
TCAP  
1
V
CC  
L501  
C503  
COMP GND  
NCP3063  
J501  
D501  
1N5819  
+
22 mH  
2.2 nF  
C501  
0.1 mF  
C502  
330 mF / 25 V  
V
= −12 V / 100 mA  
OUT  
J502  
1
R503  
1
J503  
C506  
1K96 1%  
GND  
C505  
R502  
16K9 1%  
+
470 mF / 35 V  
0.1 mF  
J504  
1
GND  
Figure 20. Typical Voltage Inverting Application Schematic  
Value of Components  
Name  
L501  
D501  
C502  
C505  
C503  
Value  
Name  
R501  
R502  
R503  
C501  
C506  
Value  
22 mH, I > 1.5 A  
150 mW, 0.5 W  
16.9 kW  
sat  
1 A, 40 V Schottky Rectifier  
330 mF, 25 V, Low ESR  
470 mF, 35 V, Low ESR  
2.2 nF Ceramic Capacitor  
1.96 kW  
100 nF Ceramic Capacitor  
100 nF Ceramic Capacitor  
Test Results  
Test  
Condition  
= 4.5 V to 6 V, I = 50 mA  
Results  
Line Regulation  
Load Regulation  
Output Ripple  
V
in  
V
in  
V
in  
V
in  
V
in  
1.5 mV  
1.6 mV  
o
= 5 V, I = 10 mA to 100 mA  
o
= 5 V, I = 0 mA to 100 mA  
300 mV  
o
pp  
Efficiency  
= 5 V, I = 100 mA  
49.8%  
o
Short Circuit Current  
= 5 V, R  
= 0.15 W  
0.885 A  
load  
52  
50  
48  
46  
44  
42  
40  
38  
36  
0
20  
40  
60  
80  
100  
OUTPUT LOAD (mA  
)
dc  
Figure 22. Efficiency vs. Output Current for the  
Voltage Inverting Demo Board at Vin = +5 V,  
Vout = −12 V, TA = 255C  
Figure 21. Voltage Inverting Demoboard Layout  
http://onsemi.com  
12  
NCP3063, NCP3063B, NCV3063  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NCP3063PG  
PDIP−8  
(Pb−Free)  
50 Units / Rail  
50 Units / Rail  
NCP3063BPG  
NCP3063DR2G  
NCP3063BDR2G  
NCP3063  
PDIP−8  
(Pb−Free)  
SOIC−8  
(Pb−Free)  
2500 Units / Tape & Reel  
2500 Units / Tape & Reel  
TBD  
SOIC−8  
(Pb−Free)  
DFN−8  
(Pb−Free)  
NCV3063PG  
PDIP−8  
(Pb−Free)  
50 Units / Rail  
NCV3063DR2G  
SOIC−8  
(Pb−Free)  
2500 Units / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
NCV prefix is for automotive and other applications requiring site and change control.  
http://onsemi.com  
13  
NCP3063, NCP3063B, NCV3063  
PACKAGE DIMENSIONS  
SOIC−8 NB  
CASE 751−07  
ISSUE AH  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
−X−  
A
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW  
STANDARD IS 751−07.  
S
M
M
B
0.25 (0.010)  
Y
1
K
−Y−  
G
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
−Z−  
1.27 BSC  
0.050 BSC  
0.10 (0.004)  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
SOLDERING FOOTPRINT*  
1.52  
0.060  
7.0  
4.0  
0.275  
0.155  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
14  
NCP3063, NCP3063B, NCV3063  
PACKAGE DIMENSIONS  
8 LEAD PDIP  
CASE 626−05  
ISSUE L  
NOTES:  
1. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
2. PACKAGE CONTOUR OPTIONAL (ROUND OR  
SQUARE CORNERS).  
8
5
3. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
−B−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
1
4
MAX  
0.400  
0.260  
0.175  
0.020  
0.070  
A
B
C
D
F
9.40  
6.10  
3.94  
0.38  
1.02  
10.16 0.370  
6.60 0.240  
4.45 0.155  
0.51 0.015  
1.78 0.040  
F
−A−  
NOTE 2  
L
G
H
J
2.54 BSC  
0.100 BSC  
0.76  
0.20  
2.92  
1.27 0.030  
0.30 0.008  
0.050  
0.012  
0.135  
K
L
3.43  
0.115  
C
7.62 BSC  
0.300 BSC  
M
N
−−−  
0.76  
10  
−−−  
1.01 0.030  
10  
0.040  
_
_
J
−T−  
SEATING  
PLANE  
STYLE 1:  
N
PIN 1. AC IN  
2. DC + IN  
3. DC − IN  
4. AC IN  
M
D
K
G
H
5. GROUND  
6. OUTPUT  
7. AUXILIARY  
M
M
M
B
0.13 (0.005)  
T A  
8. V  
CC  
http://onsemi.com  
15  
NCP3063, NCP3063B, NCV3063  
PACKAGE DIMENSIONS  
8 PIN DFN, 4x4  
CASE 488AF−01  
ISSUE B  
NOTES:  
1. DIMENSIONS AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A
B
D
8X L  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
8X K  
PIN ONE  
IDENTIFICATION  
1
8
D2  
E
MILLIMETERS  
4
5
DIM MIN  
0.80  
A1 0.00  
MAX  
1.00  
0.05  
2X  
0.15  
C
A
b 8X NOTE 3  
E2  
e
A3  
b
0.20 REF  
0.25  
0.10  
0.05  
C
A B  
TOP VIEW  
0.35  
2X  
0.15  
C
D
4.00 BSC  
C
BOTTOM VIEW  
D2 1.91  
2.21  
E
4.00 BSC  
E2 2.09  
2.39  
e
K
L
0.80 BSC  
0.20  
0.30  
−−−  
0.50  
0.10  
0.08  
C
C
A
8X  
(A3)  
A1  
SEATING  
PLANE  
C
SIDE VIEW  
SOLDERING FOOTPRINT*  
4.30  
8X  
2.21  
2.39  
0.63  
1
0.40  
0.80  
PITCH  
8X  
0.35  
DIMENSIONS: MILLIMETERS  
2.75  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NCP3063/D  

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