NCP51199_17 [ONSEMI]

DDR 2-Amp Source / Sink VTT Termination Regulator;
NCP51199_17
型号: NCP51199_17
厂家: ONSEMI    ONSEMI
描述:

DDR 2-Amp Source / Sink VTT Termination Regulator

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NCP51199, NCV51199  
DDR 2-Amp Source / Sink  
VTT Termination Regulator  
The NCP/NCV51199 is a linear regulator designed to supply a  
regulated V termination voltage for DDR−2 and DDR−3 memory  
TT  
applications. The regulator is capable of actively sourcing and sinking  
2 A peak currents for DDR−2, and DDR−3 up to 1.5 A while  
www.onsemi.com  
regulating the V output voltage to within 10 mV. The output  
TT  
MARKING  
DIAGRAM  
termination voltage is regulated to track V  
/ 2 by two external  
DDQ  
voltage divider resistors connected to the PV , GND, and V  
pins.  
CC  
REF  
8
The NCP/NCV51199 incorporates a high−speed differential  
amplifier to provide ultra−fast response to line and load transients.  
Other features include source/sink current limiting, soft−start and  
on−chip thermal shutdown protection.  
XXXXXX  
ALYW  
G
SOIC8−NB EP  
PD SUFFIX  
CASE 751BU  
8
1
1
Features  
Supports DDR−2 V Termination to 2 A, DDR−3 to 1.5 A (peak)  
TT  
XXXXXX = Specific Device Code  
A
L
= Assembly Location  
= Wafer Lot  
Stable with 10 mF Ceramic Capacitance on V Output  
TT  
Integrated Power MOSFETs  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
High Accuracy V Output at Full−Load  
TT  
Fast Transient Response  
Built−in Soft−Start  
Shutdown for Standby or Suspend Mode  
Integrated Thermal and Current−Limit Protection  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
PIN CONNECTION  
1
8
PVCC  
NC  
NC  
GND  
VREF  
V
CC  
These Devices are Pb−Free and are RoHS Compliant  
V
TT  
NC  
SOIC−8 EP  
Typical Applications  
SDRAM Termination Voltage for DDR−2 / DDR−3  
Motherboard, Notebook, and VGA Card Memory Termination  
Set Top Box, Digital TV, Printers  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
April, 2017 − Rev. 3  
NCP51199/D  
NCP51199, NCV51199  
NCP51199  
PV = 1.5 to 5.0 V*  
CC  
1
5 V  
6
PV  
CC  
V
CC  
C2  
C3  
R2  
100k  
2
3
GND  
V
TT  
= 0.75 to 2.5 V*  
V
REF  
4
V
TT  
C1  
R1  
100k  
Enable  
C4  
R3  
*For DDR2: PV = 1.8 V, V = 0.9 V  
CC  
TT  
DDR3: PV = 1.5 V, V = 0.75 V  
CC  
TT  
C1 = 1 mF (Low ESR)  
C2 = 470 mF (Low ESR)  
C3 = 47 mF  
C4 = 1000 mF + 10 mF (10 mF ceramic)  
R3 = Optional V discharge resistor  
N−ch MOSFET = Optional Enable / Disable  
TT  
Figure 1. Application Diagram  
PIN FUNCTION DESCRIPTION  
Pin No.  
Pin Name  
PVCC  
Description  
1
2
3
Input voltage which supplies current to the output pin. C = 470 mF with low ESR.  
IN  
GND  
Common Ground  
VREF  
Buffered reference voltage input equal to ½ of VDDQ and active low shutdown pin. An external resistor  
divider dividing down the PVCC voltage creates the regulated output voltage. Pulling the pin to ground  
(0.15 V maximum) turns the device off.  
4
VTT  
Regulator output voltage capable of sourcing and sinking current while regulating the output rail.  
COUT = 1000 mF + 10 mF ceramic with low ESR.  
5
6
NC  
True No Connect  
VCC  
The VCC pin is a 5 V input pin that provides internal bias to the controller. PVCC should always be kept  
lower or equal to VCC  
True No Connect  
True No Connect  
.
7
8
NC  
NC  
EP  
Thermal Pad  
Pad for thermal connection. The exposed pad must be connected to the ground plane using multiple  
vias for maximum power dissipation performance.  
www.onsemi.com  
2
NCP51199, NCV51199  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Input Supply Voltage Range (V w PV ) (Note 1)  
PV  
V
,
−0.3 to 6  
V
cc  
CC  
CC  
CC  
Output Voltage Range  
Reference Input Range  
V
−0.3 to 6  
−0.3 to 6  
125  
V
V
TT  
V
REF  
Maximum Junction Temperature  
Storage Temperature Range  
T
°C  
°C  
kV  
V
J(max)  
TSTG  
−65 to 150  
2
ESD Capability, Human Body Model (Note 2)  
ESD Capability, Machine Model (Note 2)  
ESDHBM  
ESDMM  
150  
Lead Temperature Soldering  
T
SLD  
260  
°C  
Reflow (SMD Styles Only), Pb−Free Versions (Note 3)  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)  
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)  
Latchup Current Maximum Rating: 150 mA per JEDEC standard: JESD78  
3. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Thermal Characteristics, SO8−EP (Note 4)  
°C/W  
Thermal Resistance, Junction−to−Air (Note 5)  
Power Rating at 25°C Ambient = 1.19 W, derate 12 mW/°C  
Thermal Reference, Junction−to−Lead2 (Note 5)  
R
84  
20  
q
JA  
R
Y
JL  
4. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.  
2
2
5. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate.  
OPERATING RANGES (Note 6)  
Rating  
Symbol  
PV  
Min  
1.5  
Max  
5.5  
Unit  
V
Input Voltage  
CC  
Bias Supply Voltage  
Ambient Temperature  
Junction Temperature  
V
4.75  
−40  
−40  
5.25  
85  
V
CC  
T
°C  
°C  
A
T
125  
J
6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
www.onsemi.com  
3
 
NCP51199, NCV51199  
ELECTRICAL CHARACTERISTICS  
PV = 1.8 V / 1.5 V; V = 5 V; V  
= 0.9 V / 0.75 V; C  
= 10 mF (Ceramic); T = +25°C, unless otherwise noted.  
CC  
CC  
REF  
OUT  
A
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
REGULATOR OUTPUT  
Output Offset Voltage  
Load Regulation  
I
= 0 A  
V
−20  
−10  
+20  
+10  
mV  
mV  
out  
OS  
V
V
= 900 mV, I  
= 750 mV, I  
=
=
1.8 A, PV = 1.8 V  
1.4 A, PV = 1.5 V  
Reg  
load  
REF  
REF  
out  
out  
CC  
CC  
INPUT AND STANDBY CURRENTS  
Bias Supply Current  
I
= 0 A  
I
0.8  
1
2.5  
90  
mA  
out  
BIAS  
Standby Current  
V
REF  
< 0.2 V (Shutdown), R  
= 180W  
I
STB  
mA  
LOAD  
CURRENT LIMIT PROTECTION  
PV = 1.8 V, V  
= 0.9 V  
2.0  
1.5  
3.5  
3.5  
CC  
REF  
Current Limit  
I
A
V
LIM  
PV = 1.5 V, V  
= 0.75 V  
CC  
REF  
SHUTDOWN THRESHOLDS  
Enable  
Shutdown  
V
0.6  
IH  
Shutdown Threshold Voltage  
V
0.15  
IL  
THERMAL SHUTDOWN  
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
V
V
= 5 V  
= 5 V  
T
160  
35  
168  
35  
176  
40  
°C  
°C  
CC  
SD  
T
SH  
CC  
www.onsemi.com  
4
NCP51199, NCV51199  
TYPICAL CHARACTERISTICS  
0.915  
0.910  
0.905  
0.770  
PV = 1.5 V, V = 5 V  
CC  
CC  
PV = 1.8 V, V = 5 V  
CC  
CC  
0.765  
0.760  
0.755  
0.750  
0.745  
0.740  
0.900  
0.895  
0.890  
0.885  
0.880  
0.735  
0.730  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 2. Output Voltage vs. Temperature  
Figure 3. Output Voltage vs. Temperature  
0.60  
0.55  
1.2  
1.0  
0.8  
0.6  
PV = 1.8 V, V = 5 V  
CC  
CC  
V
CC  
= 5 V  
0.50  
0.45  
0.40  
0.35  
0.30  
Enabled  
Shutdown  
0.4  
0.2  
0.25  
0.20  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 4. Shutdown Threshold vs.  
Temperature  
Figure 5. VCC Current vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
3.5  
3.0  
2.5  
PV = 1.8 V, V = 5 V  
CC  
CC  
2.0  
1.5  
1.0  
PV = 1.8 V, V = 5 V  
CC  
CC  
PV = 1.5 V, V = 5 V  
CC  
CC  
0.5  
0
0.5  
0
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 6. PVCC Current vs. Temperature  
Figure 7. Source Current Limits vs.  
Temperature  
www.onsemi.com  
5
NCP51199, NCV51199  
TYPICAL CHARACTERISTICS  
20  
15  
10  
5
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0
−5  
PV = 1.8 V, V = 5 V  
CC  
CC  
−10  
PV = 1.5 V, V = 5 V  
CC  
CC  
0.5  
0
−15  
−20  
−50  
−25  
0
25  
50  
75  
100  
125  
TIME (100 msec / div)  
TEMPERATURE (°C)  
Figure 9. 1.25 V, + 1.6 A Transient Response  
Figure 8. Sink Current Limits vs. Temperature  
Table 1. ORDERING INFORMATION  
Device  
Marking  
51199  
Package  
Shipping  
NCP51199PDR2G  
SOIC−8  
(Pb-Free)  
2500 / Tape & Reel  
NCV51199PDR2G*  
V51199  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable.  
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6
NCP51199, NCV51199  
PACKAGE DIMENSIONS  
SOIC8−NB EP  
CASE 751BU  
ISSUE E  
D
NOTES:  
NOTE 5  
A
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
F
2X  
8
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION SHALL  
BE 0.10mm IN EXCESS OF MAXIMUM MATERIAL  
CONDITION.  
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS. MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS SHALL NOT  
EXCEED 0.15mm PER SIDE. DIMENSION E DOES  
NOT INCLUDE INTERLEAD FLASH OR  
PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED 0.25mm PER  
SIDE. DIMENSIONS D AND E ARE DETERMINED AT  
DATUM F.  
0.10 C D  
5
NOTE 6  
A1  
E
E1  
NOTE 4  
L2  
2X 4 TIPS  
L
SEATING  
PLANE  
C
0.20  
C
4
DETAIL A  
1
8X b  
B
NOTE 5  
M
0.25  
C
A-B D  
TOP VIEW  
5. DIMENSIONS A AND B ARE TO BE DETERMINED  
AT DATUM F.  
2X  
6. A1 IS DEFINED AS THE VERTICAL DISTANCE  
FROM THE SEATING PLANE TO THE LOWEST  
POINT ON THE PACKAGE BODY.  
7. TAB CONTOUR MAY VARY MINIMALLY TO INCLUDE  
TOOLING FEATURES.  
0.10  
C
A-B  
NOTE 4  
DETAIL A  
h
D
8X  
0.10  
C
0.10  
C
B
B
MILLIMETERS  
DIM MIN  
MAX  
1.75  
0.10  
0.51  
0.48  
0.25  
0.23  
A
A1  
b
b1  
c
c1  
D
E
E1  
e
F
G
h
L
1.35  
0.00  
0.31  
0.28  
0.17  
0.17  
A
e
END VIEW  
SEATING  
PLANE  
C
SIDE VIEW  
NOTE 7  
4.90 BSC  
F
b
6.00 BSC  
3.90 BSC  
1.27 BSC  
b1  
G
1.55  
2.39  
2.39  
0.50  
1.27  
c c1  
SECTION B−B  
1.55  
0.25  
0.40  
L2  
0.25 BSC  
BOTTOM VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
2.60  
2.60  
8X  
1.52  
7.00  
1
8X  
0.76  
1.27  
PITCH  
DIMENSION: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
7
NCP51199, NCV51199  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
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PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81−3−5817−1050  
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Order Literature: http://www.onsemi.com/orderlit  
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NCP51199/D  

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